• Journal of Ceramic Processing Research
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• v.19 no.5
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• pp.424-427
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• 2018

The effect of oxygen pressure in the synthesis of $SnO_2$ micro/nanocrystals through thermal evaporation of Sn powder was investigated. The thermal evaporation process was performed at $1000^{\circ}C$ for 1 hr under various oxygen pressures. The pressure of oxygen changed from 10 to 500 Torr. The morphology of $SnO_2$ crystals changed drastically with oxygen pressure. $SnO_2$ nanoparticles with an average diameter of 120 nm were formed at oxygen pressure lower than 10 Torr. $SnO_2$ nanowires were grown under an oxygen pressure of 100 Torr. The nanowires have diameters in the range of 100 ~ 500 nm and lengths of several tens of micrometers. As increasing the oxygen pressure to 500 Torr, the sizes of wires increased. A strong visible emission peak centered at about 500 ~ 600 nm was observed in the room temperature cathodoluminescence spectra of all the products.

• Korean Journal of Materials Research
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• v.24 no.6
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• pp.301-304
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• 2014

The effect of oxygen pressure on the synthesis of ZnO nanowires by means of melt-oxidation of an Al-Zn mixture was investigated. The samples were prepared in oxygen ambient for 1 h at $1,000^{\circ}C$ under oxygen pressure ranging from 0.5 to 100 Torr. ZnO nanowires were formed at oxygen pressures lower than 10 Torr. As the oxygen pressure increased from 0.5 to 10 Torr, the width of the nanowires increased, but their length decreased. The ZnO nanowires had a needle shape, which became gradually thinner toward the tip. X-ray diffraction patterns showed that the nanowires had a hexagonal wurtzite structure. However, ZnO nanowires were not observed when the oxygen pressure increased from 10 Torr to 100 Torr. In roomtemperature cathodeluminescence spectra of the ZnO nanowires, the intensity of ultra-violet emission at 380 nm increased with decreasing oxygen pressure, which indicated that the lower the oxygen pressure, the better the crystallinity of the ZnO nanowires.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.11
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• pp.873-877
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• 2012

The effect of oxygen pressure in the synthesis of ZnO nanostructures through thermal evaporation of Zn powder was investigated. The thermal evaporation process was carried out in oxygen ambient for 1 hr at $1,000^{\circ}C$ under different pressures. The oxygen pressure was changed in range of 0.5 ~ 900 Torr. Any nanostructure was not formed on the specimens prepared at oxygen pressures lower than 10 Torr. When oxygen pressure was 100 Torr, ZnO nanowires were observed. With increasing the oxygen pressure to 500 Torr, the morphology of ZnO nanostructures changed from wire to tetrapod. For all the samples, room temperature photoluminescence spectra show a strong green emission peak at around 550 nm.

• Microbiology and Biotechnology Letters
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• v.22 no.5
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• pp.538-543
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• 1994

Effect of partial oxygen pressure on the cell growth and the activities of oxidative defense enzymes were measured in the continuous culture of Streptomyces coelicolor. Both the wild type and the mutant strain resistant to hydrogen peroxide were cultured and the dry cell weight of the two cultures were measured at different oxygen tensions. Growth of the wild type was inhibited by oxygen at above 0.5 vvm. Growth of the hydrogen peroxide resistant mutant was stimulated by pure oxygen at 0.5 vvm but was inhibited by oxygen at 1.0 vvm. Therefore, growth of the hydrogen peroxide resistant mutant was less affected by the deleterious oxidative stress of oxygen. Activities of the several defense enzymes were also measured at different oxygen tensions. Activities of catalase and glucose-6-phosphate dehydrogenase increased significantly as oxygen pressure increased in the wild type culture. In the mutant, however, increase in those enzyme activities was not obvious whereas the uninduced levels of the above enzymes were higher than those of wild type. As judged by Western blotting, the amount of the major catalase increased as the oxygen pressure increased. This indicates that the induction of the catalase activity by oxygen pressure is mostly due to the increase in the expression level for the major catalase.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.12
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• pp.1008-1015
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• 2001

Thin films of vanadium oxide(VO$\_$x/) have been deposited by r.f. magnetron sputtering from V$_2$O$\_$5/ target in gas mixture of argon and oxygen. The oxygen/(oxygen+argon) partial pressure ratio is changed from 0% to 8%. Crystal structure, chemical composition, bonding, optical and electrical properties of films sputter-deposited under different oxygen gas pressures are characterized through XPS, AES, RBS, FTIR, optical absorption and electrical conductivity measurements. V$_2$O$\_$5/ and lower oxides co-exist in sputter-deposited films and as the oxygen partial pressure is increased the films become more stoichiometric V$_2$O$\_$5/. The increase of O/V ratio with increasing oxygen gas pressure is attributed to the partial filling of oxygen vacancies through diffusion. It is observed that the oxygen atoms located on the V-O plane of V$_2$O$\_$5/ layer participate more readily in the oxidation process. With increasing oxygen gas pressure indirect and direct optical band gaps are increased, but thermal activation energies are decreased.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.355-357
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• 2001

ZnO thin films were deposited on (001) sapphire substrate at various ambient gas pressure by pulsed laser deposition(PLD). Oxygen was used as ambient gas, and oxygen gas pressure was varied from 1.0${\times}$10$\^$-6/ Torr to 500 mTorr during the film deposition. As oxygen gas pressure increase in the region below critical pressure photoluminescence(PL) intensity in UV and green region increase. As oxygen gas pressure increase in the region above critical pressure photoluminescence(PL) intensity in UV and green region decrease. Each of critical ambient gas Pressures was 350 mTorr for UV emission and 200 mTorr for green emission.

• The Korean Journal of Ceramics
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• v.1 no.1
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• pp.21-28
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• 1995

Electrical conductivity of $TiO_2$ thin films, deposited on $Al_2O_3$ substrates by metal organic chemical vapor deposition (MOCVD), was measured by four-point probe method in a temperature range from $800^{\circ}C$ to $1025^{\circ}C$ and an oxygen partial pressure range from $2.7{\times}10^{-5}$ atm to 1 atm. In the low oxygen partial pressure region n-type conduction was dominant, but in the high oxygen partial pressure region p-type conduction behavior appeared due to substitution of Ti ions by Al ions, which were diffused from the substrate during post deposition annealing process. Electrical conductivity of the film decreases in the n-type region and increases in the p-type region as the oxygen partial pressure increases. The transition points, which show the minimum conductivity, shifted to the higher oxygen partial pressure region as the measuring temperature increased, but it shifted to lower oxygen partial pressure region with an increase in the post annealing temperature. The results were also discussed with the possible defect models.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.21 no.12
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• pp.1690-1700
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• 1997

Entrained coal gasification tests with Datong coal were performed to assess the influence of oxygen/coal ration and pressure. When gasification condition in oxygen/coal ratio has changed from 0.5 to 1.0, optimal gasification condition from low pressure runs was oxygen/coal ratio of approximately 0.9 where CO was produced about 40% and H, about 20%. Under the pressure condition of 12-14 atmospheres, optimal oxygen/coal ratio value was in the region of 0.6 where CO was produced about 55% and H2about 25%. From these results, it was found that the oxygen/ coal ratio for the maximum production of CO and H, was decreasing with the increase in gasifier pressure and also, with increasing oxygen content, carbon conversion was increased. For the Chinese Datong coal, cold gas efficiency was in the range of 40-80%.

• Progress in Superconductivity
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• v.10 no.2
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• pp.133-138
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• 2009

The $Nd_{1+x}Ba_{2-x}Cu_3O_{7-{\delta}}$(Nd123) superconductor exhibits high performance in high magnetic field and high temperature. We have studied phase stability for Nd123 under reduced oxygen partial pressure and various heat-treatment conditions. The main phase is Nd123 and some samples contain small amounts of Nd422 depending on the temperature and oxygen partial pressure. The decomposition temperature decreases with decreasing oxygen partial pressure from $1052^{\circ}C(P(O_2)$=150 Torr) to about $845^{\circ}C(P(O_2)$=0.1 Torr). The liquidus line was steeper temperature with decreasing oxygen partial pressure. In same condition of oxygen partial pressure, the region of stable Nd123 phase was formed at slightly higher temperature than the region of stable YBCO phase.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.435-438
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• 2001

Thin films of vanadium oxide(VO$\sub$x/) have been deposited by r.f. magnetron sputtering from V$_2$O$\sub$5/ target in gas mixture of argon and oxygen. The oxygen/(oxygen+argon) partial pressure ratio is changed from 0% to 8%. Crystal structure, chemical composition and bonding properties of films sputter-deposited under different oxygen gas pressures are characterized through XRO, XPS, RBS and FTIR measurements. All the films prepared below 8% O$_2$ are amorphous, and those prepared without oxygen are gray indicating the presence of V$_2$O$\sub$$_4$/ phase in the films. V$_2$O$\sub$5/ and lower oxides co-exist in sputter-deposited films and as the oxygen partial pressure is increased the films become more stoichiometric V$_2$O$\sub$5/. The increase of O/V ratio with increasing oxygen gas pressure is attributed to the partial filling of oxygen vacancies through diffusion. It is observed that the oxygen atoms. located on the V-O plane of V$_2$O$\sub$5/ layer participate more readily in the oxidation process.