• 조명전기설비학회논문지
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• 제27권7호
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• pp.45-51
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• 2013

This study is to discuss simulation results with 51 principal chemical reactions in non-thermal plasma space under atmospheric pressure, and the ambient gas was mainly composed of oxygen and nitrogen molecules. The initial density of O and OH radicals under the ambient temperature of 300K is largely generated in comparison with other higher temperature, and the density of O radical decreased from $20{\mu}s$ according to increase the temperature. The initial density of OH radical seemed to decrease steeply at the initial stage. By increasing the initial density of $H_2O$ molecules, O radical's effect was few and the density of OH radical was largely generated about 2 times. In addition, ozone density was increased as increasing the density of O radical, but it was decreased as increasing the density of $H_2O$. In case of the temperature more than 300K, $NO_2$ tend to be removed, but NO was increased than the initial density.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2010년도 추계학술대회 초록집
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• pp.129.2-129.2
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• 2010

As a part of the government renewable energy policy, KOWEPO is constructing 300MW IGCC plant in Taean. IGCC plant consists of gasification block, air separation unit and power block, which performance test is separately conducted. Overall performance test for IGCC plant is peformed to comply with ASME PTC 46. Major factors affected on the overall efficiency for IGCC plant are external conditions, each block performance(gasification, ASU, power block), water/steam integration and air integration. Performance parameters of IGCC plant are cold gas efficiency, oxygen consumption, sensible heat recovery of syngas cooler for gasification block and purity of oxygen, flow amount of oxygen and nitrogen, power consumption for air separation unit and steam/water integration among the each block. The gas turbine capacity applied to the IGCC plant is 20 percent higher than NGCC gas turbine due to the low caloric heating value of syngas, therefor it is possible to utilize air integration between gas turbine and air separation unit to improve overall efficiency of the IGCC plant and there is a little impact on the ambient condition. It is very important to optimize the air integration design with consideration to the optimized integration ratio and the reliable operation. Optimized steam/water integration between power block and gasification block can improve overall efficiency of IGCC plant where the optimized heat recovery from gasification block should be considered. Finally, It is possibile to achieve the target efficiency above 42 percent(HHV, Net) for 300MW Taean IGCC plant by optimized design and integration.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 하계학술대회 논문집
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• pp.828-830
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• 2000

Various substrates were compared for the investigation of the optical properties of ZnO thin films. ZnO thin films have been deposited on (100) p-type silicon substrates and (001) sapphire substrates by pulsed laser deposition technique using a Nd:YAG laser with the wavelength of 355 nm. Oxygen and nitrogen gases were used as ambient gases. Substrate temperatures were varied in the range of 200$^{\circ}C$ to 600$^{\circ}C$ at a fixed ambient gas pressure of 350 mTorr. ZnO films have been deposited on various substrates, such as Si and sapphire wafers. We have investigated substrate effect on the optical and structural properties of ZnO thin films using X-ray diffraction (XRD) and photoluminescence (PL).

• 한국전기전자재료학회논문지
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• 제13권12호
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• pp.1003-1010
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• 2000

Thin films of vanadium oxide(VOx) have been deposited by r.f. magnetron sputtering from V$_2$O$\_$5/ target in gas mixture of argon and oxygen. Crystal structure, surface morphology, chemical composition, molecular structure and optical properites of films in-situ annealed in O$_2$ambient with various heat-treatment conditions are characterized through XRD, SEM, AES, RBS, RTIR and optical absorption measurements. The films annealed below 200$\^{C}$ are amorphous, and those annealed above 300$\^{C}$ are polycrystalline. The growth of grains and the transition of vanadium oxide into the higher oxide have been observed with increasing the annealing temperature and time. The increase of O/V ratio with increasing the annealing temperature and time is attributed to the diffusion of oxygen and the partial filling of oxygen vacancies. It is observed that the oxygen atoms located on the V-O plane of V$_2$O$\_$5/ layer participate more readily in the oxidation process. Also indirect and direct optical band gaps were increased with increasing the annealing temperature and time.

• 한국가스학회지
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• 제17권4호
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• pp.18-25
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• 2013

맨홀 또는 환기가 부족한 공간에서 작업 중 유해 가스나 산소결핍에 의한 질식 또는 급성중독에 의한 건강장해나 사망사고가 빈번히 발생되고 있다. 따라서 유해가스에 의한 급성중독이나 산소결핍에 의한 유해농도 규명과 재해발생시 원인규명 자료로 활용하고자 산소결핍과 유해가스 노출에 따른 사망농도 시험하고자 하였다. 특히 산소결핍 상황에서 유해가스의 영향에 대해서도 시험하였으며, 국내외에서 발생된 관련 각종 사고 사례 조사를 통하여 동종재해를 예방하고자 하였다. 자료를 조사한 결과 산소결핍 또는 유해가스 노출에 의한 사망 재해는 하절기(6-8월)에 전체의 50%가 발생하고, 업종은 건설업 40%, 장소는 맨홀 50%, 원인은 산소결핍이 가장 많았으며(40%), 기타 가스($H_2S$, CO, $N_2$, Ar 등) 및 환경적 요인(내부 온도, 바닥 물 익사)도 크게 작용하였다. 동물실험 결과 산소결핍에 의한 치사 산소농도는 5%수준이었으며 Dose-Response의 통계처리결과 과반수치사농도 $LC_{50}$(rat, 4hr)는 5.5%로 산출되었다. 또한 산소결핍(6%수준) 상황에서 다른 유해물질이 혼합 될 경우 미치는 치사농도 시험 결과 $H_2S$ 20 ppm에서 40%치사, CO는 600 ppm에서 20%치사, 톨루엔은 1,000 ppm에서도 사망 예가 증가하지 않았다. 즉, $H_2S$, CO 등은 치사농도에 민감하게 반응하는 유해물질로의 상승작용을 했다.

• The Korean Journal of Ceramics
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• 제4권3호
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• pp.183-188
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• 1998

Gas sensitizations of tin oxide film were investigated by measuring the change of film resistance in various gas atmospheres such as $N_2,\; O_2,\; H_2O$. The main test sample, polycrystalline $SnO_2$ film containing small Sb as a dopant was prepared by a sputtering technique and showed a long term stability in base resistance and thus, in gas sensitivity. The adsorption of oxygen on the film surface as a type of $(O_{ads})$ at the temperature of around $300^{\circ}C$ played important roles in sensor operating mechanism. The roles were ⅰ) the increase of base resistance in ambient air, which consequently lead to high sensitivity and ⅱ) the promotion of fast recovery. The reaction of hydrogen gas with the already adsorbed $(O_{ads})$ ions was considered as a decisive sensitization mechanism of tin oxide film. However, the dissociation of hydrogen molecules on film surface, by direct donation of electron to film also took a major part in the sensitization. The effect of humidity on gas sensitization was found to be negligible at the sensor operating temperature of around $300^{\circ}C$.

• 반도체디스플레이기술학회지
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• 제12권4호
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• pp.49-54
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• 2013

In this study, we have investigated the effect of the substrate temperature and oxygen flow rate on the characteristics of IZO thin films for the OLED (organic light emitting diodes) devices. For this purpose, IZO thin films were deposited by RF magnetron sputtering at room temperature and $300^{\circ}C$ with various $O_2$ flow rate. In order to investigate the influences of the oxygen, the flow rate of oxygen in argon mixing gas has been changed from 0.1sccm to 0.5sccm. IZO thin films deposited at room temperature show amorphous structure, whereas IZO thin films deposited at $300^{\circ}C$ show crystalline structure having an (222) preferential orientation regardless of $O_2$ flow rate. The electrical resistivity of IZO film increased with increasing flow rate of $O_2$ under Ar+$O_2$. The change of electrical resistivity with increasing flow rate of $O_2$ was mainly interpreted in terms of the charge carrier concentration rather than the charge carrier mobility. The electrical resistivity of the amorphous-IZO films deposited at R.T. was lower than that of the crystalline-IZO thin films deposited at $300^{\circ}C$. The change of electrical resistivity with increasing substrate temperature was mainly interpreted in terms of the charge carrier mobility rather than the charge carrier concentration. All the films showed the average transmittance over 85% in the visible range. The current density and the luminance of OLED devices with IZO thin films deposited at room temperature in 0.1sccm $O_2$ ambient gas are the highest amongst all other films. The optical band gap energy of IZO thin films plays a major role in OLED device performance, especially the current density and luminance.

• 센서학회지
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• 제1권2호
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• pp.173-181
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• 1992

RP 반응성 스펏터링으로서 P형 실리콘 웨이퍼위에 $Ta_{2}O_{5}$막을 제조하였다. 시편의 구조 및 조성은 XRD와 AES로 조사하였다. 산소의 혼합비가 10%일 때 C-V 특성으로부터 구한 $Ta_{2}O_{5}$막의 비유전률은 10-12이었다. AES와 RBS로 측정한 $Ta_{2}O_{5}$막의 Ta : O의 비는 각각 1 : 2와 1 : 2.49로 나타났으며, 산소분위기에서 $700^{\circ}C$의 열처리 온도에서 결정성장이 시작되었다. 산소분위기에서 $1000^{\circ}C$로 열처리한 $Ta_{2}O_{5}$막의 비유전률값은 20.5였으며, 질소분위기에서 열처리한 경우의 비유전률값은 23으로 나타났다. 이 때 가육방전계(pseudo hexagonal ${\delta}-Ta_{2}O_{5}$)의 결정구조를 나타내었다. 시편의 ${\Delta}V_{FB}$와 누설전류밀도는 산소의 혼합비가 증가함에 따라 감소하였다. 그리고 최대절연파괴전장은 산소가 10% 혼합되었을 때 2.4MV/cm로 나타났다. 이러한 $Ta_{2}O_{5}$막은 수소이온 감지막 및 기억용소자의 게이트 절연막 등에 응용될 수 있을 것이다.

• Journal of Korean Vacuum Science & Technology
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• 제5권2호
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• pp.47-51
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• 2001

To obtain high remnant polarization and good crystalinity of ferroelectric thin films in non-volatile memory devices, the high temperature treatment in oxygen ambient is inevitable. Severe problems that occur in this process are oxygen diffusion into substrate, oxidation of electrode and buffer layer, degradation of microstructure and so on. We made ruthenium dioxide thin film by reactive sputtering with oxygen and argon mixture atmosphere. Comparing quantitatively the core-level spectra of Ru and RuO$_2$ obtained by x-ray photoelectron spectroscopy(XPS), we found that chemical state of RuO$_2$ is very stable and of good resistance to oxygen diffusion and oxidation of adjacent layers. It opens the use of RuO$_2$ thin film as a multifunctional layer of good conducting electrode and resistive barrier for the diffusion and the oxidation. We also suggest a correct understanding of Ru 3d core-level spectrum for RuO$_2$ based on the scheme of final state screening and charge transfer satellites.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 하계학술대회 논문집
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• pp.456-459
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• 2000

Thin films of vanadium oxide(V$O_x$) have been deposited by r.f. magnetron sputtering from $V_2$$O_5$ prget in gas mixture of argon and oxygen. Crystal structure, surface morphology, chemical composition and bonding properties of films in-situ annealed in $O_2$ ambient with various heat-treatment conditions are characterized through XRD, SEM, AES, RBS and FTIR measurements. The filrns annealed below 200 $^{\circ}C$are amorphous, and those annealed above 30$0^{\circ}C$ are polycrystalline. The growth of grains and the transition of vanadium oxide into the higher oxide have been obsenred with increasing the annealing temperature and time. The increase of O/V ratio with increasing the annealing temperature and time is attributed to the diffusion of oxygen and the partial filling of oxygen vacancies. It is observed that the oxygen atoms located on the V-0 plane of $V_2$$O_5$ layer participate more readily in the oxidation process.