• Journal of the Korean Society of Food Science and Nutrition
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• v.12 no.2
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• pp.176-187
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• 1983

Volatile flavor components of garlic and factors which influence on its flavors were reviewed. Growth, storage and processing conditions influence on the flavor intensity of garlic. To intensify garlic flavors, it is desirable that sufficient sulfate nutrition be supplied to the soil of growing garlic and that the suggested proportions of mineral composition and water content be considered. And to maintain the flavor intensity of post harvested garlic, flavor losses taken place during over inter storage mainly due to respiration, sprout and decay, have to be minimized. Among the various storage methods, combination method of post harvest hot-air drying and low temperature ($0^{\circ}C$), low humidity (RH 70-75%) is useful. The flavor of processed garlic is very much decreased as compared with that of fresh, and the decreasing rate of flavors depends on processing method. The synthetic garlic flavors were obtained by three types based on intermediate thiosulfinate, S-alk(en) yl-$\small{L}$-cyteine sulfoxlde-alliinase fission products and $\small{L}$-5-alk (en)yl thiomethylhydantoin ${\pm}$ S-oxides. These synthetic garlic flavors may be promised to be applied to food additives.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2002.11a
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• pp.477-480
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• 2002

Si-O-C(-H) thin film with a tow dielectric constant were deposited on a P-type Si(100) substrate by an inductively coupled plasma chemical vapor deposition (ICPCVD). Bis-trimethylsilymethane (BTMSM, H$_{9}$C$_3$-Si-CH$_2$-Si-C$_3$H$_{9}$) and oxygen gas were used as Precursor. Hybrid type Si-O-C(-H) thin films with organic material have been generated many voids after annealing. Consequently, the Si-O-C(-H) films can be made a low dielectric material by the effect of void. The surface characterization of Si-O-C(-H) thin films were performed by SEM(scanning electron microscope). The characteristic analysis of Si-O-C(-H) thin films were performed by X-ray photoelectron spectroscopy (XPS).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.477-477
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• 2008

For more than three decades, the gate dielectrics in CMOS devices are $SiO_2$ because of its blocking properties of current in insulated gate FET channels. As the dimensions of feature size have been scaled down (width and the thickness is reduced down to 50 urn and 2 urn or less), gate leakage current is increased and reliability of $SiO_2$ is reduced. Many metal oxides such as $TiO_2$, $Ta_2O_4$, $SrTiO_3$, $Al_2O_3$, $HfO_2$ and $ZrO_2$ have been challenged for memory devices. These materials posses relatively high dielectric constant, but $HfO_2$ and $Al_2O_3$ did not provide sufficient advantages over $SiO_2$ or $Si_3N_4$ because of reaction with Si substrate. Recently, $HfO_2$ have been attracted attention because Hf forms the most stable oxide with the highest heat of formation. In addition, Hf can reduce the native oxide layer by creating $HfO_2$. However, new gate oxide candidates must satisfy a standard CMOS process. In order to fabricate high density memories with small feature size, the plasma etch process should be developed by well understanding and optimizing plasma behaviors. Therefore, it is necessary that the etch behavior of $HfO_2$ and plasma parameters are systematically investigated as functions of process parameters including gas mixing ratio, rf power, pressure and temperature to determine the mechanism of plasma induced damage. However, there is few studies on the the etch mechanism and the surface reactions in $BCl_3$ based plasma to etch $HfO_2$ thin films. In this work, the samples of $HfO_2$ were prepared on Si wafer with using atomic layer deposition. In our previous work, the maximum etch rate of $BCl_3$/Ar were obtained 20% $BCl_3$/ 80% Ar. Over 20% $BCl_3$ addition, the etch rate of $HfO_2$ decreased. The etching rate of $HfO_2$ and selectivity of $HfO_2$ to Si were investigated with using in inductively coupled plasma etching system (ICP) and $BCl_3/Cl_2$/Ar plasma. The change of volume densities of radical and atoms were monitored with using optical emission spectroscopy analysis (OES). The variations of components of etched surfaces for $HfO_2$ was investigated with using x-ray photo electron spectroscopy (XPS). In order to investigate the accumulation of etch by products during etch process, the exposed surface of $HfO_2$ in $BCl_3/Cl_2$/Ar plasma was compared with surface of as-doped $HfO_2$ and all the surfaces of samples were examined with field emission scanning electron microscopy and atomic force microscope (AFM).

• Korean Chemical Engineering Research
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• v.53 no.3
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• pp.372-381
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• 2015

The effect of preparation method on the catalytic activities of the $Ni/Al_2O_3$ catalysts on steam reforming of ethylene glycol was investigated. The catalysts were prepared with various preparation methods such as an incipient wetness impregnation, wet impregnation, and coprecipitation method. In the case of coprecipitation method, various precipitants such as KOH, $K_2CO_3$, and $NH_4OH$ were compared. The prepared catalysts were characterized by using $N_2$ physisorption, inductively coupled plasma-atomic emission spectroscopy, X-ray diffraction, temperatureprogrammed reduction, pulsed $H_2$ chemisorption, temperature-programmed oxidation, scanning electron microscopy, and thermogravimetric analysis. Among the catalysts reduced at 773 K, the $Ni/Al_2O_3$ catalyst prepared by a coprecipitation with KOH or $K_2CO_3$ as precipitants showed the best catalytic performance. The preparation method affected the particle size of Ni, reducibility of nickel oxides, catalytic performance (activity and stability), and types of coke formed during the reaction. The $Ni/Al_2O_3$ catalyst prepared by a coprecipitation with KOH showed the increasing catalytic activity with an increase in the reduction temperature from 773 to 1173 K because of an increase in the reduction degree of Ni oxide species even though the particle size of Ni increased with increasing reduction temperature.

• Korean Chemical Engineering Research
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• v.50 no.3
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• pp.398-402
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• 2012

The catalytic performance of some metal oxides in the vapor phase selective oxidation of $H_2S$ in the stream containing ammonia and water was investigated. Among the catalysts tested $Fe_2O_3/SiO_2$ was the most promising catalyst for practical application. It showed higher than 90% $H_2S$ conversion and very small amount of $SO_2$ emission over a temperature range of $240{\sim}280^{\circ}C$. The effects of reaction temperature, $O_2/H_2S$ ratio, amount of ammonia and water vapor on the catalytic activity of $Fe_2O_3/SiO_2$ were discussed to better understand the reaction mechanism. The $H_2S$ conversion showed a maximum at $260^{\circ}C$ and it decreased with increasing temperature over $280^{\circ}C$. With an increase of $O_2/H_2S$ ratio from 0.5 to 4, the conversion was slightly increased, but the selectivity to elemental sulfur was remarkably decreased. The increase of ammonia amount favored the conversion and the selectivity to elemental sulfur with a decrease in $SO_2$ production. The presence of water vapor decreased both the activity and the selectivity to sulfur, but increased the ATS selectivity.

• Korean Chemical Engineering Research
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• v.46 no.5
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• pp.922-930
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• 2008

The selective non-catalytic reduction(SNCR) performance is sensitive to the process parameters such as flow velocity, reaction temperature and mixing of reagent(ammonia or urea) with the flue gases. Therefore, the knowledge of the velocity field, temperature field and species concentration distribution is crucial for the design and operation of an effective SNCR injection system. In this work, a full-scale two-dimensional computational fluid dynamics(CFD)-based reacting model involving a droplet model is built and validated with the data obtained from a pilot-scale urea-based SNCR reactor installed with a 150 kW LPG burner. The kinetic mechanism with seven reactions for nitrogen oxides($NO_x$) reduction by urea-water solution is used to predict $NO_x$ reduction and ammonia slip. Using the turbulent reacting flow CFD model involving the discrete droplet phase, the CFD simulation results show maximum 20% difference from the experimental data for NO reduction. For $NH_3$ slip, the simulation results have a similar tendency with the experimental data with regard to the temperature and the normalized stoichiometric ratio(NSR).

• Clean Technology
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• v.18 no.1
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• pp.83-88
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• 2012

In order to improve the stability of ${\gamma}-Al_2O_3$ on hydrolysis of $SF_6$, the catalytic promoters were investigated in this study. The crystal phase of ${\gamma}-Al_2O_3$ is transformed to their ${\alpha}$-phase during hydrolysis of $SF_6$. Various metal oxides were applied as the promoter material that is Ga, Mg, and Zn and the promoter of 1, 5, and 10 wt% was impregnated over ${\gamma}-Al_2O_3$ by the impregnation method. Specially, it were confirmed in the catalytic activity tests and XRD analysis that ZnO/${\gamma}-Al_2O_3$ catalyst had the high activity for decomposition of $SF_6$ by catalytic hydrolysis and the crystal phase of ZnO promoted ${\gamma}-Al_2O_3$ was not transformed. From these results, it could be known that the stability of ${\gamma}-Al_2O_3$ is enhanced with the catalytic promotion of ZnO impregnated over the surface of catalyst.

• Journal of IKEEE
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• v.20 no.3
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• pp.220-225
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• 2016

In this paer, low on-resistance and high-power trench gate MOSFET (Metal-Oxide-Silicon Field Effect Transistor) incorporating current sensing FET (Field Effect Transistor) is proposed and evaluated. The trench gate power MOSFET was fabricated with $0.6{\mu}m$ trench width and $3.0{\mu}m$ cell pitch. Compared with the main switching MOSFET, the on-chip current sensing FET has the same device structure and geometry. In order to improve cell density and device reliability, self-aligned trench etching and hydrogen annealing techniques were performed. Moreover, maintaining low threshold voltage and simultaneously improving gate oxide relialility, the stacked gate oxide structure combining thermal and CVD (chemical vapor deposition) oxides was adopted. The on-resistance and breakdown voltage of the high density trench gate device were evaluated $24m{\Omega}$ and 100 V, respectively. The measured current sensing ratio and it's variation depending on the gate voltage were approximately 70:1 and less than 5.6 %.

• Korean Journal of Soil Science and Fertilizer
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• v.43 no.1
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• pp.51-59
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• 2010

The sediments and soils around a mine are likely to be exposed to contamination of arsenic (As) through mining operations. In this study, the factors associated with As movement in soils around a closed zinc (Zn) mine were evaluated by the relationship of As distributions to physico-chemical properties of soils. A sequential extraction scheme, based on a soil P fractionation, was used to assess the As distributionsin solid phases. A significant difference in As distributions was found between paddy and upland soils. While As contents of paddy soils increased with soil depth, those of upland soils decreased with soil depth. In upland soils, As showed additional significant relationships to oxides of Si, Al and Fe. Although a major fraction of As in soils was found to be in the NaOH extractable fraction, As exhibited highly significant relationship to the Zn species that apparently originated from the mine. Therefore, As mobility around Zn mine seems to be governed by mass flow of the particulates containing As-associated Zn in paddy soils, whereas retention reactions such as adsorption, complexation, and precipitation seem to predominate in upland soils.

• Journal of the Korean Chemical Society
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• v.55 no.4
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• pp.612-619
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• 2011

Lanthanide(III) complexes of 1,2-diphenyl-4-butyl-3,5-pyrazolidinedione(phenylbutazone, PB) have been synthesized and characterized by elemental analyses, molar conductance measurements, IR, UV-Vis. and NMR spectra. The spectral data reveal that the PB acts as a bidentate and mono-ionic ligand coordinating through both the carbonyl oxygens of the pyrazolidinedione ring. The molar conductance data suggest that the complexes are non-electrolytes. The thermal behaviour of the complexes was studied by TG and DTG in air atmosphere and the results provide information about dehydration, thermal stability and thermal decomposition. The final products are found to be the corresponding metal oxides. The thermodynamic parameters and kinetic parameters were evaluated for the dehydration and decomposition stages. The negative entropy values of the decomposition stages indicate that the activated complexes have a more ordered structure than the reactants and that the reactions are slower than normal. Based on these studies, the complexes have been formulated as $[Ln(PB)_3]{\cdot}5H_2O$(Ln=La and Ce) and $[Ln(PB)_3(H_2O)_2]{\cdot}2H_2O$(Ln=Pr, Nd and Sm).