• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2018년도 춘계학술대회 논문집
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• pp.68-68
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• 2018

Nanoporous or nanotubular metal oxide can be fabricated by anodization of metal substrate in fluoride contained electrolytes. The approach allows various transition metals such as Zr, Hf, Nb, Ta to form highly ordered oxide nanostructures. These oxide nanostructures have various advantages such as high surface area, fast electron transport rate and slow recombination in semiconductive materials. Recently, vanadium oxide nanostructures have been drawn attentions due to their superior electronic, catalytic and ion insertion properties. However, anodization of vanadium metal to form oxide layers is relatively difficult due to ease formation of highly soluble complex in water contained electrolyte during anodization. Yang et al. reported $[TiF_6]^{2-}$ or $[BF_4]^-$ in electrolyte helps to formation of stable oxide layer [1, 2]. However, the reported approaches are very sensitive in other parameters. In this presentation, we deal with the other important key parameters to form ordered anodic vanadium oxide such as pH, temperatures and applied potential.

• 한국전기전자재료학회논문지
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• 제11권10호
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• pp.778-783
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• 1998

Film characteristics of thin ONO dielectric layers for MONOS(metal-oxide-nitride-oxide-semiconductor) EEPROM was investigated by TEM, AES and AFM. Seocnd derivative spectra of Auger Si LVV overlapping peak provide useful information fot chemical state analysis of superthin film. The ONO film with dimension of tunnel oxide 23$\AA$, nitride 33$\AA$, and blocking oxide 40$\AA$ was fabricated. During deposition of the LPCVD nitride film on tunnel oxide, this thin oxide was nitrized. When the blocking oxide was deposited on the nitride film, the oxygen not only oxidized the nitride surface, but diffused through the nitride. The results of ONO film analysis exhibits that it is made up of $SiO_2$ (blocking oxide)/O-rich SiON(interface)/N-rich SiON(nitride)/ O-rich SiON(tunnel oxide)

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2002년도 ITC-CSCC -1
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• pp.365-368
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• 2002

We investigated the influence of RTP annealing of multi-layered metal films deposited on oxides layer. Two types of oxides, BPSG and P-7205, were used as a bottom layer under multi-layered metal film. The bonding was not good in metal/BPSG/Si samples because adhesion between metal layer and BPSG oxide layer was poor by interfacial reaction during RTP annealing above 650$^{\circ}C$. On the other hand bonding was always good in metal/ P-TEOS /Si samples regardless of annealing temperature. We observed the interface between oxide and metal layers using AES and TEM. The phosphorus and oxygen profile in interface between metal and oxide layers were different in metal/BPSG/Si and metal/P-TEOS/Si samples. We have known that the properties of interface was improved in metal/BPSG/Si samples when the sample was annealed below 650$^{\circ}C$.

• 한국전기전자재료학회논문지
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• 제31권2호
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• pp.85-89
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• 2018

In this study, functional transparent conducting layers were investigated for Si-based photoelectric applications. Double transparent conductive oxide (TCO) films were deposited on a Si substrate in the sequence of indium tin oxide (ITO) followed by aluminum-doped zinc oxide (AZO). First, we observed that the conductivity and transparency of AZO dominate the overall performance of the double TCO layers. Secondly, the double layered TCO film (consisting of AZO/ITO) deposited by sputtering was compared to a AZO-only film in terms of their optical and electrical properties. We prepared three different AZO films: ITO:3min/AZO:10min, ITO:5min/AZO:7min, and ITO:7min/AZO:4min. The results show that the optical properties (transmittance, absorbance, and reflection) can be controlled by the film composition. This may provide a significant pathway for the manipulation of the optical and electrical properties of photoelectric devices.

• 한국표면공학회지
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• 제28권6호
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• pp.333-342
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• 1995

Stainless steels are widely selected as commercial engineering materials mainly because of their excellent corrosion resistance, oxidation resistance and strength. Because the manufacturing temperature of stainless steels is relatively high, the chemical and physical properties of the oxide film which was formed on the stainless steels are of importance in determining the rate of oxidation and the life of equipment exposed to high temperature oxidizing environments. In this study, the oxidation behavior of S. S. 304 and S. S. 430 added by a small amount of oxygen active elements(each +0.5wt% Hf and Y) was studied to improve oxidation resistance. The results of cyclic and isothermal oxidation on S. S. 304 added by OAE showed relatively poor oxidation resistance due to spallations and cracks of $Cr_2O_3$ layer. But all S. S. 430+0.5wt% OAE maintained constant oxidation rates and stable oxide layers at high temperature environment. Especially S. S. 430+0.5wt% Y formed a $Cr_2O_3$ oxide layer and improved cyclic oxidation resistance preventing loss of protective layers about 1000 hours at $1000^{\circ}C$

• 한국생산제조학회지
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• 제22권3_1spc호
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• pp.544-550
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• 2013

A grooved surface with anisotropic wettability was fabricated on a silicon substrate using photolithography, reactive ion etching, and a KOH etching process. The contact angles (CAs) of water droplets were measured and compared with the theoretical values in the Cassie state and Wenzel state. The experimental results showed that the contact area between a water droplet and a solid surface was important to determine the wettability of the water. The specimens with native oxide layers presented CAs ranging from $71.6^{\circ}$ to $86.4^{\circ}$. The droplets on the specimens with a native oxide layer could be in the Cassie state because they had relatively smooth surfaces. However, the CAs of the specimens with thick oxide layers ranged from $33.4^{\circ}$ to $59.1^{\circ}$. This indicated that the surface roughness for a specimen with a relatively thick oxide layer was higher, and the water droplet was in the Wenzel state. From the CA measurement results, it was observed that the wetting on the grooved surface was anisotropic for all of the specimens.

• 설비공학논문집
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• 제24권3호
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• pp.281-287
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• 2012

The internal oxide scale of twelve superheater and reheater tubes were tested which were serviced for 30,000~120,000 hours in thermal power plants. The oxide scale was formed in three layers. The Cr-rich area was observed beneath the original metal surface. The hematite ($Fe_2O_3$) phase was formed on the outer surface. The intermediate layer was magnetite ($Fe_3O_4$). The thickness of Cr-rich layer was about half of the total scale. All layers grew during the operation hour of the plant. The thickness of thickest scale was 0.2mm in superheater tubes. This can increase the tube metal temperature about $7^{\circ}C$ more than initial state. $7^{\circ}C$ tube metal temperature can reduce tube life about 30%, but the boiler tube's design margin is big enough therefore it has been analyzed that it would not effect on the life span.

• Advances in materials Research
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• 제1권1호
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• pp.31-35
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• 2012

Unique tooth-like (milky white) color ${\beta}$-Ti dental arch wires are prepared by anodization in a 1M $H_2SO_4$ electrolyte at $30^{\circ}C$ and 30 V for 88 min and 40 s. Aggregates are formed on these surfaces of the anodized wires with tooth-like colors, and the results are different from those of the anodized wires with monochromatic colors which have smooth oxide surfaces. Similar to the monochromatic wires, the composition of the oxide layer is $TiO_{2-x}$ and the x approaches zero at the outer layer. But different from the amorphous structure observed in monochromatic wires, the oxide layers are partially crystallized with an anatase structure. The milky white colors result from the rough and crystalized oxide layers, not by the interference effect as observed in monochromatic wires.

• 한국진공학회:학술대회논문집
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• 한국진공학회 1996년도 제11회 학술발표회 논문개요집
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• pp.120-120
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• 1996

• Transactions on Electrical and Electronic Materials
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• 제11권4호
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• pp.155-165
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• 2010

As a promising candidate to replace the conventional floating gate flash memories, polysilicon-oxide-nitride-oxidesilicon (SONOS)-type nonvolatile semiconductor memories have been investigated widely in the past several years. SONOS-type memories have some advantages over the conventional floating gate flash memories, such as lower operating voltage, excellent endurance and compatibility with standard complementary metal-oxide-semiconductor (CMOS) technology. However, their operating speed and date retention characteristics are still the bottlenecks to limit the applications of SONOS-type memories. Recently, various approaches have been used to make a trade-off between the operating speed and the date retention characteristics. Application of high-k dielectrics to SONOS-type memories is a predominant route. This article provides the state-of-the-art research progress of high-k dielectrics applicable to SONOS-type nonvolatile semiconductor memories. It begins with a short description of working mechanism of SONOS-type memories, and then deals with the materials' requirements of high-k dielectrics used for SONOS-type memories. In the following section, the microstructures of high-k dielectrics used as tunneling layers, charge trapping layers and blocking layers in SONOS-type memories, and their impacts on the memory behaviors are critically reviewed. The improvement of the memory characteristics by using multilayered structures, including multilayered tunneling layer or multilayered charge trapping layer are also discussed. Finally, this review is concluded with our perspectives towards the future researches on the high-k dielectrics applicable to SONOS-type nonvolatile semiconductor memories.