• Transactions on Electrical and Electronic Materials
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• 제17권1호
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• pp.33-36
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• 2016

In the present work, a Ni-doped indium zinc oxide (NIZO) film and its multilayers with Ag layers were investigated as transparent conducting electrodes for liquid crystal display (LCD) applications, as a substitute for indium tin oxide (ITO) electrodes. By interposing the Ag layer between the NIZO layers, the loss of the optical transmittance occurred; however, the Ag layer brought enhancement of electrical sheet resistance to the NIZO/Ag/NIZO multilayer electrode. The twisted nematic cell based on the NIZO/Ag/NIZO multilayer electrode exhibited superior electro-optical characteristics than those based on single NIZO electrode and was competitive compared to those based on the conventional ITO electrode. An LCD-based NIZO/Ag/NIZO multilayer electrode may allow new approaches to conventional ITO electrodes in display technology.

• Bulletin of the Korean Chemical Society
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• 제20권11호
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• pp.1340-1344
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• 1999

The electrochemical behavior of oxide layers on aluminium was studied using electrochemical impedance spectroscopy. Impedance spectra were taken at a compact and a porous oxide layer of Al. The anodic films on Al have a variable stoichiometry with gradual reduction of oxygen deficiency towards the oxide-electrolyte interface. Thus, the interpretation of impedance spectra for oxide layers is complicated, with the impedance of surface layers differing from those of ideal capacitors. This layer behavior with conductance gradients was caused by an inhomogeneous dielectric. The frequency response cannot be described by a single RC element. The oxide layers of Al are properly described by the Young model of dielectric constant with a vertical decay of conductivity.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.284-284
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• 2011

Recently, the increasing degree of device integration in the fabrication of Si semiconductor devices, etching processes of nano-scale materials and high aspect-ratio (HAR) structures become more important. Due to this reason, etch selectivity control during etching of HAR contact holes and trenches is very important. In this study, The etch selectivity and etch rate of TEOS oxide layer using ACL (amorphous carbon layer) mask are investigated various process parameters in CH2F2/C4F8/O2/Ar plasma during etching TEOS oxide layer using ArF/BARC/SiOx/ACL multilevel resist (MLR) structures. The deformation and etch characteristics of TEOS oxide layer using ACL hard mask was investigated in a dual-frequency superimposed capacitively coupled plasma (DFS-CCP) etcher by different fHF/ fLF combinations by varying the CH2F2/ C4F8 gas flow ratio plasmas. The etch characteristics were measured by on scanning electron microscopy (SEM) And X-ray photoelectron spectroscopy (XPS) analyses and Fourier transform infrared spectroscopy (FT-IR). A process window for very high selective etching of TEOS oxide using ACL mask could be determined by controlling the process parameters and in turn degree of polymerization. Mechanisms for high etch selectivity will discussed in detail.

• 한국분말재료학회지
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• 제21권4호
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• pp.260-265
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• 2014

In this study, in order to increase surface ability of hardness and corrosion of magnesium alloy, anodizing and sealing with nano-diamond powder was conducted. A porous oxide layer on the magnesium alloy was successfully made at $85^{\circ}C$ through anodizing. It was found to be significantly more difficult to make a porous oxide layer in the magnesium alloy compared to an aluminum alloy. The oxide layer made below $73^{\circ}C$ by anodizing had no porous layer. The electrolyte used in this study is DOW 17 solution. The surface morphology of the magnesium oxide layer was investigated by a scanning electron microscope. The pores made by anodizing were sealed by water and aqueous nano-diamond powder respectively. The hardness and corrosion resistance of the magnesium alloy was increased by the anodizing and sealing treatment with nano-diamond powder.

• 한국표면공학회지
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• 제35권4호
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• pp.193-198
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• 2002

Alloys of XD45 (Ti45A12Nb2Mn-0.8vol%TiB$_2$) and XD47 (Ti47A12Nb2Mn-0.8vol%TiB$_2$) were oxidized between 800 and $1000^{\circ}C$ in air, and their oxidation characteristics were studied. The oxide scales consisted primarily of an outer $TiO_2$ layer, an intermediate $Al_2$$O_3$-rich layer, and an inner mixed layer of ($TiO_2$+$Al_2$$O_3$). Nb tended to present at the lower part of the oxide scale, whereas Mn at the upper part of the oxide scale. The Pt marker tests indicated that the outer oxide layer grew primarily by the outward diffusion of Ti and Mn, and the inner mixed layer by the inward transport of oxygen.

• Journal of Ceramic Processing Research
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• 제13권spc2호
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• pp.336-340
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• 2012

Wide band gap p-type hydrogenated amorphous silicon oxide (a-SiO:H) buffer layer has been used at the interface of transparent conductive oxide (TCO) and hydrogenated amorphous silicon (a-Si:H) p-type layer of a p-i-n type a-Si:H solar cell. Introduction of 5 nm thick buffer layer improves in blue response of the cell along with 0.5% enhancement of photovoltaic conversion efficiency (η). The cells with buffer layer show higher open circuit voltage (Voc), fill factor (FF), short circuit current density (Jsc) and improved blue response with respect to the cell without buffer layer.

• Korean Chemical Engineering Research
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• 제55권4호
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• pp.483-489
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• 2017

The loss of the sulfur cathode material through dissolution of the polysulfide into electrolyte causes a significant capacity reduction of the lithium-sulfur cell during the charge-discharge reaction, thereby debilitating the electrochemical performance of the cell. We addressed this problem by using a chemical and physical approach called reduction of polysulfide dissolution through direct coating functional inorganic (graphene oxide) or organic layer (polyethylene oxide) on electrode, since the deposition of external functional layer can chemically interact with polysulfide and physically prevent the leakage of lithium polysulfide out of the electrode. Through this approach, we obtained a composite electrode for a lithium-sulfur battery (sulfur: 60%) coated with uniform and thin external functional layers where the thin external layer was coated on the electrode by solution coating and drying by a subsequent heat treatment at low temperature (${\sim}80^{\circ}C$). The external functional layer, such as inorganic or organic layer, not only alleviates the dissolution of the polysulfide electrolyte during the charging/discharging through physical layer formation, but also makes a chemical interaction between the polysulfide and the functional layer. As-formed lithium-sulfur battery exhibits stable cycling electrochemical performance during charging and discharging at a reversible capacity of 700~1187 mAh/g at 0.1 C (1 C = 1675 mA/g) for 30 cycles or more.

• 한국재료학회지
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• 제14권4호
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• pp.265-269
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• 2004

Plasma nitrocarburising and post oxidation were performed on SCM435 steel by a pulsed plasma ion nitriding system. Plasma oxidation resulted in the formation of a very thin ferritic oxide layer 1-2 $\mu\textrm{m}$ thick on top of a 15～25 $\mu\textrm{m}$ $\varepsilon$-F $e_{2-3}$(N,C) nitrocarburized compound layer. The growth rate of oxide layer increased with the treatment temperature and time. However, the oxide layer was easily spalled from the compound layer either for both oxidation temperatures above $450^{\circ}C$, or for oxidation time more than 2 hrs at oxidation temperature $400^{\circ}C$. It was confirmed that the relative amount of $Fe_2$$O_3$, compared with $e_3$$O_4$, increased rapidly with the oxidation temperature. The amounts of ${\gamma}$'-$Fe_4$(N,C) and $\theta$-$Fe_3$C, generated from dissociation from $\varepsilon$-$Fe_{2-3}$ /(N,C) phase during $O_2$ plasma sputtering, were also increased with the oxidation temperature.e.

• 한국전기전자재료학회논문지
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• 제25권2호
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• pp.85-90
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• 2012

In this paper, we compared and analyzed 3D silicon-oxide-nitride-oxide-silicon (SONOS) multi layer flash memory devices fabricated on nitride or oxide layer, respectively. The device fabricated on nitride layer has inferior electrical properties than that fabricated on oxide layer. However, the device on nitride layer has faster program / erase speed (P/E speed) than that on the oxide layer, although having inferior electrical performance. Afterwards, to find out the reason why the device on nitride has faster P/E speed, 1/f noise analysis of both devices is investigated. From gate bias dependance, both devices follow the mobility fluctuation model which results from the lattice scattering and defects in the channel layer. In addition, the device on nitride with better memory characteristics has higher normalized drain current noise power spectral density ($S_{ID}/I^2_D$>), which means that it has more traps and defects in the channel layer. The apparent hooge's noise parameter (${\alpha}_{app}$) to represent the grain boundary trap density and the height of grain boundary potential barrier is considered. The device on nitride has higher ${\alpha}_{app}$ values, which can be explained due to more grain boundary traps. Therefore, the reason why the devices on nitride and oxide have a different P/E speed can be explained due to the trapping/de-trapping of free carriers into more grain boundary trap sites in channel layer.

• 전자공학회논문지D
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• 제36D권10호
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• pp.9-16
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• 1999

Flash EEPROM 셀에서 기존의 ONO 구조의 IPD를 사용하면 peripheral MOSFET의 게이트 산화막을 성장할 때에 사용되는 세정 공정을 인하여 ONO 막의 상층 산화막이 식각되어 전하 보존 특성이 크게 열화되었으나 IPD 공정에 ONON 막을 사용하면 그 세정 공정시에 상층 질화막이 상층 산호막이 식각되는 것을 방지시켜 줌으로 전하보존 특성이 크게 개선되었다. ONON IPD 막을 갖고 있는 Flash EEPROM 셀의 전화 보존 특성의 모델링을 위하여 여기서는 굽는(bake) 동안의 전하 손실로 인한 문턱전압 감소의 실험식으로 ${\Delta}V_t\; = \;{\beta}t^me^{-ea/kT}$을 사용하였으며, 측정 결과 ${\beta}$=184.7, m=0.224, Ea=0.31 eV의 값을 얻었다. 이러한 0.31 eV의 활성화 에너지 값은 굽기로 인한 문턱전압의 감소가 층간 질화막 내에서의 트립된 전자들의 이동에 의한 것임을 암시하고 있다. 한편, 그 모델을 사용한 전사 모사의 결과는 굽기의 thermal budget이 낮은 경우에 실험치와 잘 일치하였으나, 반면에 높은 경우에는 측정치가 전사 모사의 결과보다 훨씬 더 크게 나타났다. 이는 thermal budge가 높은 경우에는 프로그램시에 층간 질화막 내에 트립되어 누설전류의 흐름을 차단해 주었던 전자들이 빠져나감으로 인하여 터널링에 의한 누설전류가 발생하였기 때문으로 보여졌다. 이러한 누설전류의 발생을 차단하기 위해서는 ONON 막 중에서 층간 질화막의 두께는 가능한 얇게 하고 상층 산화막의 두께는 가능한 두껍게 하는 것이 요구된다.