• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.8
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• pp.602-607
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• 2013

Concern for the TOS (Transparent Oxide Semiconductor) is increasing with the recent increase in interest for flexible device. Especially MgZnO has attracted a lot of attention. $Mg_xZn_{1-x}O$, which ZnO-based wideband-gap alloys is tuneable the band-gap ranges from 3.36 eV to 7.8 eV. In particular, the flexible substrate, the crystal structure of the amorphous as well as the surface morphology is not good. So research of MgZnO thin films growth on flexible substrate is essential. Therefore, in this study, we studied on the effects of the oxygen partial pressure on the structural and crystalline of $Mg_{0.1}Zn_{0.9}O$ thin films. MgZnO thin films were deposited on PES substrate by using pulsed laser deposition. We used XRD and AFM in order to observe the structural characteristics of MgZnO thin films. UV-visible spectrophotometer was used to get the band gap and transmittance. Crystallization was done at a low oxygen partial pressure. The crystallinity of MgZnO thin films with increasing temperature was improved, Grain size and RMS of the films were increased. MgZnO thin films showed high transmittance over 80% in the visible region.

• Corrosion Science and Technology
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• v.2 no.2
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• pp.68-74
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• 2003

The effects of Niobium on the structure and properties(especially electric properties) of passive film of Zirconium alloys in pH 8.5 buffer solution are examined by the photo-electrochemical analysis. For Zr-xNb alloys (x = 0, 0.45, 1.5, 2.5 wt%), photocurrent began to increase at the incident energy of 3.5 ~ 3.7 eV and exhibited the $1^{st}$ peak at 4.3 eV and the $2^{nd}$ peak at 5.7 eV. From $(i_{ph}hv)^{1/2}$ vs. hv plot, indirect band gap energies $E_g{^1}$= 3.01~3.47 eV, $E_g{^2}$= 4.44~4.91 eV were obtained. With increasing Nb content, the relative photocurrent intensity of $1^{st}$ peak significantly increased. Compared with photocurrent spectrum of thermal oxide of Zr-2.5Nb, It was revealed that $1^{st}$ peak in photocurrent spectrum for the passive film formed on Zr-Nb alloy was generated by two types of electron transitions; the one caused by hydrous $ZrO_2$ and the other created by Nb. Two electron transition sources were overlapped over the same range of incident photon energy. In the photocurrent spectrum for passive film formed on Zr-2.5Nb alloy in which Nb is dissolved into matrix by quenching, the relative photocurrent intensity of $1^{st}$ peak increased, which implies that dissolved Nb act as another electron transition source.

• Bulletin of the Korean Chemical Society
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• v.26 no.10
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• pp.1525-1528
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• 2005

The synthesis and characterization of ${K_3[Ru(C_2O_4)3]{\cdot}4H_2O\;(C_2O_4}^{2-}$ = oxalato anoin) complex are described, and its redox properties (in buffer solution of pH = 12) have been investigated. This complex is used for in situ generation of oxoruthenates complexes which have been characterized by electronic spectroscopy. Reaction of ${K_3[Ru(C_2O_4)3]{\cdot}4H_2O$ with excess ${S_2O_8}^{2-}$ in molar KOH generates trans-${[RuO_3(OH)_2]^{2-}/S_2O_8}^{2-}$ reagent while with excess ${BrO_3}^-$ in molar $Na_2CO_3$ generates ${[RuO_4]^-/BrO_3}^-$ reagent. Avoiding the direct use of [$RuO_4$] the organic-soluble $(n-Pr_4N)^+[RuO_4]^-$, (TPAP) has been isolated by reaction of $K_3[Ru(C_2O_4)3]{\cdot}4H_2O$ with excess ${BrO_3}^-$ in molar carbonate and n-$Pr_4$NOH. In a mixture of $H_2O/CCl_4$ ruthenium tetraoxide can be generated by reaction of $K_3[Ru(C_2O_4)3]{\cdot}4H_2O$ with excess ${IO_4}^-$. The catalytic activities of oxoruthenates that have been made from $K_3[Ru(C_2O_4)3]{\cdot}4H_2O$ towards the oxidation of benzyl alcohol, piperonyl alcohol, benzaldehyde and benzyl amine at room temperature have been studied.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2001.11a
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• pp.35-35
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• 2001

agnesium Oxide (MgO) with a NaCI structure is well known to exhibit high secondary electron emission, excellent high temperature chemical stability, high thermal conductance and electrical insulating properties. For these reason MgO films have been widely used for a buffer layer of high $T_c$ superconducting and a protective layer for AC-plasma display panels to improve discharge characteristics and panel lifetime. Up to now MgO films have been synthesized by lE-beam evaporation, Molecular Beam Epitaxy (MBE) and Metalorganic Chemical Vapor Deposition (MOCVD), however there have been some limitations such as low film density and micro-cracks in films. Therefore magnetron sputtering process were emerged as predominant method to synthesis high density MgO films. In previous works, we designed and manufactured unbalanced magnetron source with high power density for the deposition of high quality MgO films. The magnetron discharges were sustained at the pressure of O.lmtorr with power density of $110W/\textrm{cm}^2$ and the maximum deposition rate was measured at $2.8\mu\textrm{m}/min$ for Cu films. In this study, the syntheses of MgO films were carried out by unbalanced magnetron sputtering with various $O_2$ partial pressure and specially target power densities, duty cycles and frequency using pulsed DC power supply. And also we investigated the plasma states with various $O_2$ partial pressure and pulsed DC conditions by Optical Emission Spectroscopy (OES). In order to confirm the relationships between plasma states and film properties such as microstructure and secondary electron emission coefficient were analyzed by X-Ray Diffraction(XRD), Transmission Electron Microscopy(TEM) and ${\gamma}-Focused$ Ion Beam (${\gamma}-FIB$).

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.12
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• pp.1122-1127
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• 1998

Group II-AF_2$films such as $CaF_2$, $SrF_2$, and $BaF_2$ have been commonly used many practical applications such as silicon on insulatro(SOI), three-dimensional integrated circuits, buffer layers, and gate dielectrics in filed effect transistor. This paper presents electrical and structural properties of fluoride films as a gate dielectric layer. Conventional gate dielectric materials of TFTs like oxide group exhibited problems on high interface trap charge density($D_it$), and interface state incorporation with O-H bond created by mobile hydrogen and oxygen atoms. To overcome such problems in conventional gate insulators, we have investigated $CaF_2$ films on Si substrates. Fluoride films were deposited using a high vacuum evaporation method on the Si and glass substrate. $CaF_2$ films were preferentially grown in (200) plane direction at room temperature. We were able to achieve a minimum lattice mismatch of 0.74% between Si and $CaF_2$ films. Average roughness of $CaF_2$ films was decreased from 54.1 ${\AA}$ to 8.40 ${\AA}$ as temperature increased form RT and $300^{\circ}C$. Well fabricated MIM device showed breakdown electric field of 1.27 MV/cm and low leakage current of $10^{-10}$ A/$cm^2$. Interface trap charge density between $CaF_2$ film and Si substrate was as low as $1.8{\times}10^{11}cm^{-2}eV^{-1}$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.30-31
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• 2006

The LSCF cathode for Solid Oxide Fuel Cell was investigated to develop high performance unit cell at intermediate temperature by modified oxalate method with different electrolyte. The LSCF precursors using oxalic acid, ethanol and $NH_4OH$ solution were prepared at $80^{\circ}C$, and pH was controlled as 2, 6, 7, 8, 9 and 10. The synthesis precursor powders were calcined at $800^{\circ}C$, $1000^{\circ}C$ and $1200^{\circ}C$ for 4hrs. Unit cells were prepared with the calcined LSCF cathode, buffer layer between cathode and each electrolyte that is the LSGM, YSZ, ScSZ and CeSZ. The synthesis LSCF powders by modified oxalate method were measured by scanning electron microscope and X-ray diffraction. The interfacial polarization resistance of cell was characterized by Solatron 1260 analyzer. The crystal of LSCF powders show single phase at pH 2, 6, 7, 8 and 9, and the average particle size was about $3{\mu}m$. The electric conductivity of synthesis LSCF cathode which was calcined at $1200^{\circ}C$ shows the highest value at pH 7. The cell consist of GDC had the lowest interfacial resistance (about 950 S/cm@650) of the cathode electrode. The polarization resistance of synthesis LSCF cathode by modified oxalate method has the value from 4.02 to 7.46ohm at $650^{\circ}C$. GDC among the electrolytes, shows the lowest polarization resistance.

• Journal of Surface Science and Engineering
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• v.56 no.1
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• pp.62-68
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• 2023

Silicon (Si) is considered as a promising substitute for the conventional graphite due to its high theoretical specific capacity (3579 mAh/g, Li₁₅Si₄) and proper working voltage (~0.3V vs Li⁺/Li). However, the large volume change of Si during (de)lithiation brings about severe degradation of battery performances, rendering it difficult to be applied in the practical battery directly. As a one feasible candidate of industrial Si anode, silicon monoxide (SiO_x) demonstrates great electrochemical stability with its specialized strategy, downsized Si nanocrystallites surrounded by Li⁺ inactive buffer phase (Li₂O and Li₄SiO₄). Nevertheless, SiO_x inherently has the initial irreversible capacity and poor electrical conductivity. To overcome those issues, conformal carbon coating has been performed on SiO_x utilizing ethylbenzene as the carbon precursor of chemical vapor deposition (CVD). Through various characterizations, it is confirmed that the carbon is homogeneously coated on the surface of SiO_x. Accordingly, the carbon-coated SiOx from CVD using ethylbenzene demonstrates 73% of the first cycle efficiency and great cycle life (88.1% capacity retention at 50th cycle). This work provides a promising synthetic route of the uniform and scalable carbon coating on Si anode for high-energy density.

• Progress in Superconductivity and Cryogenics
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• v.8 no.1
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• pp.9-14
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• 2006

Sample preparation plays a critical role in microstructure analysis using TEM. Although TEM specimen has been usually prepared by jet-polishing or Ar-ion beam milling technique. these methods could not be applied to YBCO CC which is composed of IBAD or RABiTS substrates, several buffet layers, and YBCO superconducting layer because of big difference in mechanical strengths between the metallic phase and oxide phases. To obtain useful cross-sectional information such as interface between the phases or second phases in YBCO CC, it is prerequisite to secure the large area of thin section in the cross-sectional direction. The superconducting layer or the buffer layers are relatively weak and fragile compared to the metallic substrate such as Ni-5wt%W RABiTS of Hastelloy-based IBAD, and preferential removal of weak ceramic phases during polishing steps makes specimen preparation almost impossible. Tripod polisher and small jig were home-made and employed to sample preparation. The polishing angle was maintained <$1^{\circ}$ throughout the polishing steps using 2 micrometers attached to the tripod plate. TEM specimens with large and thin area could be secured and used for RABiTS/IBAD substrate analyses. In some cases, additional Ar-beam ion milling with low beam current and impinging angle was used for less than 30 sec. to remove debris or polishing media attacked to the specimens.

• Parasites, Hosts and Diseases
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• v.34 no.3
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• pp.197-206
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• 1996

Water extract of Coix locrvmn seeds (Co-Ex) was separated into several components; dissolved with Tris-Cl buffer and the supernatant (WC 1), ammonium sulfate treatment supernatant (WC2) and the pellet nvc31,9AE column chromatography of WC 1 and the peak portions; WC4, WCS and WC6. Murine peritoneal macrophages in DMEM containing 10% heat-inactivated FCS were infected with tachyzoites of ToxopIQsmc gondii, RH strain, in uifo. By adding modulators such as Co-Ex, WC 1,2,3,4.5,6 and LPS or IFN-γ for 24 hrs . toxoplasmastatic activity of macrophages was examined in relation to nitrite production. Nitrite production of macrophages was enhanced especially in the series of WC2, WC1 and the combination sample (WC1 + WC2 + WC3) by order than other components or fractions (WC4, WC5, WC6) tested . Toxoplasmastatic actions such as percentage of the inacrophages infected by T. gonnii and fold increase of T gondii in macrophages showed retroverse relations with the amount of nitrite production; i.e. as nitric oxide (NO) increased the phagocytic index of macrophages and the fold increase of tachyzoites in macrophages decreased . Nitrite (NO-2) production was increased by adding IFN-γ in all cases together with enhancement of biostatic effects. Through the results obtained, it is speculated that some components other than the non-proteinous and defatted components in Coix lacrwmn seeds may contribute to activate macrophages through induction of NO for the biostatic activity.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.38 no.12
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• pp.8-13
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• 2001

Cerium oxide ($CeO_2$) thin film has been proposed as a buffer layer between the ferroelectric thin film and the Si substrate in Metal-Ferroelectric-Insulator-Silicon (MFIS) structures for ferroelectric random access memory (FRAM) applications. In this study, $CeO_2$ thin films were etched with $Cl_2$/Ar gas mixture in an inductively coupled plasma (ICP). Etch properties were measured for different gas mixing ratio of $Cl_2$($Cl_2$+Ar) while the other process conditions were fixed at RF power (600 W), dc bias voltage (-200 V), and chamber pressure (15 mTorr). The highest etch rate of $CeO_2$ thin film was 230 ${\AA}$/min and the selectivity of $CeO_2$ to $YMnO_3$ was 1.83 at $Cl_2$($Cl_2$+Ar gas mixing ratio of 0.2. The surface reaction of the etched $CeO_2$ thin films was investigated using x-ray photoelectron spectroscopy (XPS) analysis. There is a Ce-Cl bonding by chemical reaction between Ce and Cl. The results of secondary ion mass spectrometer (SIMS) analysis were compared with the results of XPS analysis and the Ce-Cl bonding was monitored at 176.15 (a.m.u). These results confirm that Ce atoms of $CeO_2$ thin films react with chlorine and a compound such as CeCl remains on the surface of etched $CeO_2$ thin films. These products can be removed by Ar ion bombardment.