• 치위생과학회지
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• 제9권4호
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• pp.405-412
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• 2009

본 연구는 도재소부용 비귀금속에 Au 코팅 층을 형성하고, Au 코팅 층이 금속-도재의 결합력에 미치는 영향을 알아보고자 2출 굴곡 시험 후에 SEM/EDS 방법으로 조사하여 비교하였다. 1. Ni-Cr ally 군과 Co-Cr alloy 군, 그리고 Ti 군의 절단면 시편의 전자현미경 사진에서 Au 코팅 층은 산화층의 확산을 제어하는 것으로 관찰되었다. 2. 2축 굴곡 시험 후에 EDS 분석 결과 Ni-Cr alloy 군과 Co-Cr alloy 군에서 Si 함량은 Au 코팅 층을 형성한 시편에서 약간 감소하였고, 결합실패의 형태는 cohesive failure와 adhesive failure가 혼재된 양상으로 관찰되었다. 3. Ni-Cr alloy 군과 Co-Cr alloy 군에서 Au 코팅 층은 도재-금속 결합력에 미치는 영향은 미미하였다. 4. Ti 군의 결합실패 형태는 Ni-Cr alloy 군과 Co-Cr alloy 군에 비해서 adhesive failure 양상이 두드러지게 관찰되었고, Au 코팅 층은 도재-금속 결합력에 영향을 미치지 않았다. 이상의 결과 비귀금속에 적용한 Au 코팅은 산화층의 확산을 제어 하는 것으로 관찰 되었으나, 금속-도재 간의 결합력 증징에 미치는 효과는 미미하였다. Au 코팅을 이용하여 금속-도재 간의 결합력 증진을 위해서는 많은 연구가 지속되어야 할 것으로 사료된다.

• 마이크로전자및패키징학회지
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• 제28권2호
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• pp.29-37
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• 2021

3 차원 패키징을 위한 저온 Cu-Cu직접 접합부의 계면접착에너지를 향상시키기 위해 Cu박막 표면에 대한 Ar/N₂ 2단계 플라즈마 처리 전, 후 Cu표면 및 접합계면에 대한 화학결합을 X-선 광전자 분광법(X-ray photoelectron spectroscopy)을 통해 정량화한 결과, 2단계 플라즈마 처리로 인해 Cu표면에 Cu₄N이 형성되어 Cu산화를 효과적으로 억제하는 것을 확인하였다. 2단계 플라즈마 처리하지 않은 Cu-Cu시편은 표면 산화막의 영향으로 접합이 제대로 되지 않았으나 2단계 플라즈마 처리한 시편은 효과적인 표면 산화방지효과로 인해 양호한 Cu-Cu접합을 형성하였다. Cu-Cu직접접합 계면의 정량적 계면접착에너지를 double cantilever beam 시험방법 및 4점 굽힘(4-point bending, 4-PB) 시험방법을 통해 비교한 결과, 각각 1.63±0.24, 2.33±0.67 J/m²으로 4-PB 시험의 계면접착에너지가 더 크게 측정되었다. 이는 계면파괴역학의 위상각(phase angle)에 따른 계면접착에너지 증가 거동으로 설명할 수 있는데 즉, 4-PB의 계면균열선단 전단응력성분 증가로 인한 계면거칠기의 효과에 기인한 것으로 판단된다.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2009년도 추계학술발표대회
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• pp.28.2-28.2
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• 2009

Cobalt thin film was fabricated by a novel NH3-based plasma-enhanced atomic layer deposition(PE-ALD) using Co(CpAMD) precursor and $NH_3$ plasma. The PE-ALD Co thin films were produced well on both thermally grown oxide (100 nm) $SiO_2$ and Si(001) substrates. Chemical bonding states and compositions of PE-ALD Co films were analyzed by XPS and discussed in terms of resistivity and impurity level. Especially, we successfully developed PE-ALD Code position at very low growth temperature condition as low as $T_s=100^{\circ}C$, which enabled the fabrication of Co patterns through lift-off method after the deposition on PR patterned substrate without any thermal degradation.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1995년도 춘계학술대회 논문집
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• pp.227-229
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• 1995

Using thermal oxide SiO$_2$ as a dielectrical isolation layer, SOI Hall sensors without pn junction isolation have been fabricated on Si/SiO$_2$/Si structures. The SOI structure was formed by SDB (Si- wafer direct bonding) technology. The Hall voltage and the sensitivity of Si Hall devices implemented on the SDB SOI structure show good linearity with respect to the appled magnetic flux density and supplied current. The product sensitivity of the SDB SOI Hall device is average 600V/V.T. In the trmperature range of 25 to 300$^{\circ}C$, the shifts of TCO(Temperature Coefficient of the Offset Voltage) and TCS(Temperature Coefficient of the Product Sensitivity) are less than ${\pm}$ 6.7x10$\^$-3/ C and ${\pm}$8.2x10$\^$04/$^{\circ}C$, respectively. These results indicate that the SDB SOI structure has potential for the development of Hall sensors with a high-sensitivity and high-temperature operation.

• 한국진공학회지
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• 제8권2호
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• pp.136-140
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• 1999

The stability and response time of $WO_3$ thin films for EC device are critical problems being solved. Those are affected by the species of electrolyte, preparation conditions and fabricating methods of specimen. In this paper, we compared the stabilities of three kinds of tungsten oxide film in electrolyte. Each of three films was prepared by different manufacturing conditions, that is, one is a thermal oxidation film of tungsten metal deposited on pure glass substrate, another is a $WO_3$ film made on ITO glass directly, the other is a thermally oxidized film on tungsten plate. It was observed that thermally oxidized $WO_3$ films has a remarkable stability (the lifetime was above $10^6$ cycle). From these results, we found that the stability was closely related to the stoichiometric bonding between tungsten and oxygen atoms in addition to crystallinity and density of film.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2003년도 추계학술발표강연 및 논문개요집
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• pp.220-220
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• 2003

최근, Cu기판 위에 YBaCuO$_{7-x}$ 초전도체를 입혀 초전도 선재를 제작하려는 연구가 이루어지고 있으며 이 과정에서 CuO와 Cu$_2$O가 생성된다는 보고가 있다. CuO 및 Cu$_2$O의 생성은 초전도 선재의 전기전도적 특성 및 기계적 특성에 상당한 영향을 끼칠 수 있다. 따라서 CuO와 Cu$_2$O에 대한 연구가 필요하다고 할 수 있다. 본 연구에서는 DV-X$\alpha$ 분자궤도법을 통해 CuO와 Cu$_2$O에 대한 (Cu$_{29}$ O$_{58}$ )$^{58-}$ , (Cu$_{52}$ O$_{19}$ )$^{14+}$ 모델을 이용하여 전자상태계산을 하였다. CuO, Cu$_2$O의 valence orbital level 구조 및 DOS (Density of State)를 통해 Cu원자와 O원자간의 공유결합 세기를 측정하였으며 CuO, Cu$_2$O 서로간의 차이점을 분석하였다.

• 한국전기전자재료학회논문지
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• 제13권12호
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• pp.977-982
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• 2000

Conventional transistors which have vertical structure show increased parasitic capacitance characteristics in accordance with the increase of non-active base area and collector area. These consequently have disadvantage for high speed switching performance. In this paper, a lateral structure transistor which has minimized parasitic capacitance by using SDB(Silicon Direct Bonding) wafer and oxide sidewall isolation utilizing silicon trench technology is presented. Its structural characteristics are designed by ATHENA(SUPREM4), the process simulator from SILVACO International, and its performance is proven by ATLAS, the device simulator from SILVACO International. The performance of the proposed lateral structure transistor is certified through the V$\_$CE/-I$\_$C/ characteristics curve, h$\_$FE/-I$\_$C/ characteristics, and GP-plot. Cutoff Frequency is 13.7㎓.

• 한국고분자학회:학술대회논문집
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• 한국고분자학회 2006년도 IUPAC International Symposium on Advanced Polymers for Emerging Technologies
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• pp.295-295
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• 2006

In present study, poly(acrylic acid) (PAA) and hydrophobically modified poly(ethylene oxide) (HM-PEO) multilayers based on the hydrogen bonding between the component polymer pair have been prepared by the LbL deposition method. Dip assembled HM-PEO/PAA multilayers yield unique film morphologies in comparison with PEO/PAA multilayers due to the micellar formation of HM-PEO owing to the hydrophobic attraction between alkyl chains end-capped with the PEO chains. Individual HM-PEO micelles were connected through the bridging PEO chains to form temporary networks on multilayer surface and induced peculiar surface morphology on HM-PEO/PAA multilayers above the critical number of bilayers.

• Bulletin of the Korean Chemical Society
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• 제28권12호
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• pp.2369-2376
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• 2007

N2O has been found from experimental and theoretical considerations to bind on-top to the Pd(110) surface in a tilted end-on fashion via its terminal N atom. We use a frontier orbital description of the bonding interactions in the Pd-N2O system to obtain molecular insight into the catalytic mechanism of the activation of N2O by the Pd(110) surface giving rise to the formation of N2 and O on the surface. For the tilted end-on N2O binding mode, the LUMO 3π of N2O has good overlap with the Pd dσ and dπ orbitals which can serve as the electron donors. The donor-acceptor orbital overlap is favorable for electron transfer from Pd to N2O and is expected to dominate the surface reaction pathway of N2O decomposition.

• 한국세라믹학회지
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• 제31권12호
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• pp.1443-1448
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• 1994

Pb(Mg1/3Nb2/3)O3-PbTiO3-BaTiO3 solid solution was formed by mixed-oxide method. The phase during formation was analysed by XRD and formation mechanism was investigated. While heat-treating Pb(Mg1/3Nb2/3)O3 composition, the first, Pb2Nb2O7 and Pb3Nb2O8 pyrochlore phases are formed, and finally Pb(Mg1/3Nb2/3)O3 perovskite phase with containing Pb3Nb4O13 pyrochlore phase is obtained at 80$0^{\circ}C$. When Pb(Mg1/3Nb2/3)O3 composition is modified with PbTiO3 which have strong ionic bonding and high tolerance factor, the amount of pyrochlore phase is decreased by increasing of stability in perovskite structure.