• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.1
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• pp.80-84
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• 2000

BSCCO thin films are fabricated via a co-deposition process by an ion beam sputtering with an ultra-low growth rate, and sticking coefficients of the respective elements are evaluated. The sticking coeffi-cient of Bi element exhibits a characteristic temperature dependence : almost a constant value of 0.49 below 73$0^{\circ}C$ and decreases linearly with temperature over 73$0^{\circ}C$. This temperature dependence can be elucidated from the evaporation and sublimation rates of bismuth oxide, Bi\ulcornerO\ulcorner, from the film surface. It is considered that the liquid phase of the bismuth oxide plays an important role in the Bi(2212) phase formation in the co-deposition process.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.05b
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• pp.94-97
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• 2005

Bismuth high Tc superconducting thin films are fabricated via a co-deposition process by an ion beam sputtering with an ultra low growth rate, and sticking processing of the respective elements are evaluated. The sticking processing of bismuth element in bismuth high Tc superconducting thin film formation was observed to show a unique temperature dependence; it was almost a constant value of 0.49 below about $730^{\circ}C$ and decreased linearly over about $730^{\circ}C$. This temperature dependence can be elucidated from the evaporation and sublimation rates of bismuth oxide, $Bi_2O_3$, from the film surface. It is considered that the liquid phase of the bismuth oxide plays an important role in the bismuth phase formation in the co-deposition process.

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2002.05a
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• pp.198-202
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• 2002

$HfO_2$films were grown on Si substrate in the temperature range $250~550^{\circ}C$ using metal organic chemical vapor deposition (MOCVD) technique for a gate dielectric. Hafnium tart-butoxide and Oxygen gas were used as precursors and N2 was used as carrier gas. Impurity distribution and film structure(including interfacial layer) were studied at the deposition temperature range between 25$0^{\circ}C$ and $550^{\circ}C$. The growth rate and impurty distribution decreased with increasing temperature. The electrical properties of $HfO_2$were investigated with C-V, 1-V method and showed it has a good properties as a gate dielectric.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.11a
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• pp.213-216
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• 1999

BSCCO thin films are fabricated via a co-deposition process by an ion beam sputtering with an ultra-low growth rate, and sticking coefficients of the respective elements are evaluated. The sticking coefficient of Bi element exhibits a characteristics temperature dependence : almost a constant value of 0.49 below 730$^{\circ}C$ and decreases linearly with temperature over 730$^{\circ}C$. This temperature dependence can be elucidated from the evaporation and sublimation rates of bismuth oxide, Bi$_2$O$_3$ from the film surface. It is considered that the liquid phase of the bismuth oxide plays an important role in the Bi(2212) phase formation in the co-deposition process.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.193-197
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• 2000

BSCCO thin films are fabricated via a co-deposition process by an ion beam sputtering with an ultra-low growth rate, and sticking coefficients of the respective elements are evaluated. The sticking coefficient of Bi element exhibits a characteristic temperature dependence : almost a constant value of 0.49 below 73$0^{\circ}C$ and decreases linearly with temperature over 73$0^{\circ}C$. This temperature dependence can be elucidated from the evaporation and sublimation rates of bismuth oxide, Bi$_2$O$_3$, from the film surface. It is considered that the liquid phase of the bismuth oxide plays an important role in the Bi(2212) phase formation in the co-deposition process.

• Proceedings of the Korean Society of Propulsion Engineers Conference
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• 2008.11a
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• pp.217-220
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• 2008

Slag mass deposition was required to predict accurate performance of kick motor (KM) system. Slag mass accumulation was analyzed through the aluminum oxide particle paths to predict slag mass deposition. Numerical analysis to solve both flow field and droplet accumulation was performed with Fluent 6.3 program. The effects for the acceleration and diameters of the aluminum oxide particles was analyzed, finally total slag mass accumulation was acquired. It confirmed that the slag mass deposition was agreed well with previously slag mass prediction based on KM ground test.

• Bulletin of the Korean Chemical Society
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• v.34 no.5
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• pp.1462-1466
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• 2013

We demonstrate that ruthenium oxide ($RuO_2$) nanotubes with controlled dimensions can be synthesized using facile electrochemical means and anodic aluminum oxide (AAO) templates. $RuO_2$ nanotubes were formed using a cyclic voltammetric deposition technique and an aqueous plating solution composed of $RuCl_3$. Linear sweep voltammetry (LSV) was used to determine the effective electrochemical oxidation potential of $Ru^{3+}$ to $RuO_2$. The length and wall thickness of $RuO_2$ nanotubes can be adjusted by varying the range and cycles of the electrochemical cyclic voltammetric potentials. Thick-walled $RuO_2$ nanotubes were obtained using a wide electrochemical potential range (-0.2~1 V). In contrast, an electrochemical deposition potential range from 0.8 to 1 V produced thin-walled and longer $RuO_2$ nanotubes in an identical number of cycles. The dependence of wall thickness and length of $RuO_2$ nanotubes on the range of cyclic voltammetric electrochemical potentials was attributed to the distinct ionic diffusion times. This significantly improves the ratio of surface area to mass of materials synthesized using AAO templates. Furthermore, this study is directive to the controlled synthesis of other metal oxide nanotubes using a similar strategy.

• Proceedings of the KIEE Conference
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• 2003.07c
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• pp.1535-1537
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• 2003

Manganese oxide electrode was designed to improve electrical conductivity for dimensionally stable anode(DSA) using discreet variation (DV)-X${\alpha}$ method. It was calculated in DV-X${\alpha}$ method that the addition of nickel to manganese oxide reduce the energy band gap of manganese oxide electrode. Therefore, it is estimated that nickel in 3 additive elements of Ti, Ni and Sn is the best candidate to improve the electrical conductivity of manganese oxide. The anodically deposited manganese oxide which was produced in 0.2M $MnSO_4$ and 0.2M (Mn,Ni)$SO_4$ solution had $MnSO_4$ structure which was identified by XRD. The $MnSO_4$ films produced in both solutions over than 50mA/$cm^2$ of current density and long deposition time of 600sec showed low adhesion with Ti substrate.

• Journal of the Korean Chemical Society
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• v.43 no.1
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• pp.23-29
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• 1999

The Al oxide layer formed in 1M $H_2SO_4$ solution and the influence of applied frequency for electrodeposition of Mn on Al oxide layer were characterized using by impedance spectroscopy. Mn compounds were electrodeposited at the base of pores during deposition with applied low frequency voltage. For the Mn deposited oxide layer at 6OHz and 5Hz in 1 g/L $KMnO_4$ solution, in equivalent circuit for interpretation, the resistance ($R_2$) and capacitance ($C_2$) were considered to be due to deposition of Mn on base of pore. The electrochemical behavior of barrier layer and porous oxide layer on Al have been characterized by capacitance ($C_b$) and Young capacitance ($C_Y$) in equivalent circuit model.

• Korean Chemical Engineering Research
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• v.47 no.1
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• pp.11-16
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• 2009

Composite electrodes for redox supercapacitor were prepared potentiodynamically by the deposition of $RuO_2$ and the co-deposition of Ru-Co mixed oxide on the surface of single-walled carbon nanotube. Electrode of Ru-Co mixed oxide, in which Ru(13.13 wt%) and Co(2.89 wt%) were deposited on the carbon nanotube, exhibited a similar specific capacitance(${\sim}620\;F\;g^{-1}$) with $RuO_2$ electrode at a low potential scan rate($10\;mV\;s^{-1}$), but showed a superior one ($570\;F\;g^{-1}$) at a high scan rate($500\;mV\;s^{-1}$) than that of $RuO_2$($475\;F\;g^{-1}$). Such increase in the specific capacitance at high scan rate by the co-deposition of Ru and Co species was due to the structural support of Co species to provide the electronic conduction through Ru species.