• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 1998년도 춘계학술대회 논문집
• /
• pp.79-82
• /
• 1998

Film characteristics of thin ONO dielectric layers for MONOS(metal-oxide-nitride-oxide-semiconductor) EEPRM was investigated by AES and AFM. Second derivative spectra of AES Si LVV overlapping peak provided useful information for chemical state analysis of superthin film. The ONO films with dimension of tunneling oxide 24${\AA}$, nitride 33${\AA}$, and blocking oxide 40${\AA}$ were fabricated. During deposition of the LPCVD nitride films on tunneling oxide, this thin oxide was nitrized. When the blocking oxide were deposited on the nitride film, the oxygen not only oxidized the nitride surface, but diffused through the nitride. The results of ONO film analysis exhibits that it is made up of SiO$_2$(blocking oxide)/O-rich SiON(interface/N-rich SiON(nitride)/-rich SiON(interface)/N-rich SiON(nitride)/O-rich SiON(tunneling oxide).

• 한국정보통신학회논문지
• /
• 제6권1호
• /
• pp.99-102
• /
• 2002

다결정 실리콘층 아래의, 게이트 산화막이라고 불리는 높은 온도에서 형성된 산화막에서 핀홀이 관찰되었으며 그 메카니즘이 분석되었다. 다결정 실리콘층 아래의 산화막은 다른 다결정 실리콘층의 플라즈마 에칭 과정 동안에 파괴되어진다. 두 개의 다결정 실리콘층은 CVD증착에 의해 만들어진 0.8$\mu\textrm{m}$의 두꺼운 산화막에 의해 분리되어 있다. 파괴된 산화막들이 아크가 발생한 부분을 중심으로 흩어져 있으며 아크가 발생한 부분에서 생성된 극도로 강한 전계가 게이트 산화막을 파괴 시켰다고 가정된다. 아크가 발생한 부분은 Alignment key에서 관찰되었고 그리고 이것이 발견된 웨이퍼는 낮은 수율을 보여주었다. 아크가 발생한 부분이 칩의 내부가 아니더라도 게이트 산화막의 파괴에 의해 칩이 정상적으로 동작하지 않았다.

• 한국재료학회:학술대회논문집
• /
• 한국재료학회 2009년도 추계학술발표대회
• /
• pp.28.2-28.2
• /
• 2009

Cobalt thin film was fabricated by a novel NH3-based plasma-enhanced atomic layer deposition(PE-ALD) using Co(CpAMD) precursor and $NH_3$ plasma. The PE-ALD Co thin films were produced well on both thermally grown oxide (100 nm) $SiO_2$ and Si(001) substrates. Chemical bonding states and compositions of PE-ALD Co films were analyzed by XPS and discussed in terms of resistivity and impurity level. Especially, we successfully developed PE-ALD Code position at very low growth temperature condition as low as $T_s=100^{\circ}C$, which enabled the fabrication of Co patterns through lift-off method after the deposition on PR patterned substrate without any thermal degradation.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2009년도 하계학술대회 논문집
• /
• pp.250-250
• /
• 2009

Thin film of $SnO_2$ was fabricated from plasma enhanced atomic layer deposition technology with bubbler type injector system by using TEMASn (tetrakisethylmethylamino tin) precursor. Mostly crystalline of $SnO_2$ films can be obtained with oxygen plasma and with water at relatively low temperature of $150^{\circ}C$. $SnO_2$ was deposited as an uniform rate of $1.0A^{\circ}$/cycle. In order to obtain uniform film, a seed oxide material was used before TEMASn deposition in ALD process. The process parameters were controlled to obtain dense thin film by atomic deposition methodology. The morphology and characterization of thin film with optimized process condition will be discussed.

• 한국세라믹학회지
• /
• 제29권12호
• /
• pp.990-996
• /
• 1992

Chemical vapor deposition of ATO from SnCl4-SbCl5-H2O gas mixture was investigated with thermodynamic and experimental analyses. Electrical conductivity of the ATO film was much improved under deposition conditions of low input-gas ratio, Psbcl5/Psbcl4. This increase of the conductivity was attributed to donor electrons produced mainly by the pentavalent Sb ions in SnO2 lattice. However high input-gas ratio conditions produced an ATO film consisting of a mixture of SnO2 and very fine Sb2O5 phase. It was found that the deterioration of electrical conductivity and optical transmission of the film was caused by the deposition of fine Sb2O5 phase in the SnO2 matrix.

• 한국콘텐츠학회:학술대회논문집
• /
• 한국콘텐츠학회 2007년도 추계 종합학술대회 논문집
• /
• pp.804-806
• /
• 2007

ZnO박막을 c-축 방향으로 실리콘(Si 100)기판 위에 rf 마그네트론 스퍼터링 법으로 증착 하였고, 증착변수가 박막의 결정학적, 전기적 특성에 미치는 영향을 연구하였다. 기판온도 $200^{\circ}C$, rf전력이 150W, 산소:아르곤 가스의 비율이 50%:50%, 그리고 증착압력이 10mTorr의 조건에서 증착된 박막이 강한 c-축 성장과 우수한 결정성을 나타내었다. 증착변수의 변화에 의한 ZnO 박막의 전기비저항은 크게 영향을 받고 있었는데, 산소비율이 증가할수록, 기판온도가 감소할수록, 비저항이 증가하였다.

• JSTS:Journal of Semiconductor Technology and Science
• /
• 제8권4호
• /
• pp.326-332
• /
• 2008

In this work CdS films were prepared by using chemical bath deposition, which is simple and inexpensive technique suitable for large deposition area. Annealing in air at different temperatures (300, 350, 400, 450 and $500^{\circ}C$) at constant time of 30 min, also for different times (15, 30, 45, 60 and 90 min) at constant temperature ($300^{\circ}C$) is achieved. X-Ray analysis has confirmed the formation of cadmium oxide (CdO) with slight increase in grain size, shift towards lower scattering angle due to relaxation in the tensile strain for deposition films, and structure change from cubic and hexagonal to the hexagonal. From electrical properties, significant increase in electrical conductivity appeared in samples annealed at $300^{\circ}C$ for 60 min, and at $350^{\circ}C$ for 30 min.

• 한국반도체및디스플레이장비학회:학술대회논문집
• /
• 한국반도체및디스플레이장비학회 2006년도 춘계학술대회
• /
• pp.135-138
• /
• 2006

OLEDs are attractive because of possible application in display with low operating voltage, low power consumption, self-emission and capability of multicolor emission by the selection of emissive material. We investigated the effects of deposition rate on the electrical characteristics, physical characteristics and optical characteristics of OLEDs in the ITO(indium-tin-oxide)/N,N'-diphenyl-N,N'-bis(3-methyphenyl)-1,1'-biphenyl-4,4'-diamine(TPD)/tris(8-hydroxyquinoline)aluminum($Alq_3$)/Al device. We measured current density, luminous flux and luminance characteristics of devices with varying deposition rates of TPD and $Alq_3$. It has been found that optimal deposition rate of TPD and $Alq_3$ were respectively $1.5{\AA}/s$ from the device structure. An AFM measurement results, surface roughness of the deposited film was the lowest when deposition rate was $1.5{\AA}/s$.

• 대한전기학회논문지
• /
• 제41권7호
• /
• pp.760-765
• /
• 1992

The material properties and the TFT characteristics fabricated on SiOS12T substrate by LPCVD using SiHS14T gas were investigated. The deposition rate showed Arrhenius behavior with an activation energy of 31Kcal/mol. And the transition temperature form amorphous to crystalline deposition was observed at 570$^{\circ}C$-580$^{\circ}C$. The strong(220) texture was observed as the deposition temperature increases. XRD analysis showed that the film texture of the as-deposited polycrystalline silicon does not change after annealing at 850$^{\circ}C$. The fabricated TFT's based on the as-deposited amorphous film showed superior electrical characteristics to those of the as-deposited polycrystalline films. It is considered that the different electrical characteristics result from the difference of flat band voltage(VS1FBT) due to the interface trap density between the gate oxide and the active channel.

• 한국세라믹학회지
• /
• 제52권5호
• /
• pp.315-319
• /
• 2015

Yttria-stabilized zirconia (YSZ)-based micro tubular SOFC single cells were fabricated by electrophoretic deposition (EPD) process. Stable slurries for the EPD process were prepared by adding phosphate ester (PE) as a dispersant in order to control the pH, conductivity, and zeta-potential. NiO-YSZ anode support, NiO-YSZ anode functional layer (AFL), and YSZ electrolyte were consecutively deposited on a graphite rod using the EPD process; materials were then co-sintered at $1400^{\circ}C$ for 4 h. The thickness of the deposited layer increased with increasing of the applied voltage and the deposition time. A YSZ-based micro tubular single cell fabricated by the EPD process exhibited a maximum power density of $0.3W/cm^2$ at $750^{\circ}C$.