• 한국신재생에너지학회:학술대회논문집
• /
• 2008.10a
• /
• pp.59-62
• /
• 2008

The performance behavior of solid oxide fuel cell using reformate gas as fuels was investigated. When the pre-reformate gas was used without steam, the maximum power density was 50% lower than that using H2. This may be due to carbon deposition caused by the pyrolysis of remaining hydrocarbons. However, when the steam was added, the maximum power density showed a relatively small variation according to reformate gas. When pre-reformate gas with steam was fed into anode, the SOFC showed the stable performance without sharp voltage drop during 10h operation.

• The Transactions of the Korean Institute of Electrical Engineers C
• /
• v.54 no.10
• /
• pp.449-452
• /
• 2005

We fabricated an electrochemical detector (ECD) to catalyze redox reaction efficiently by electrodepositing Prussian blue (PB) on the indium tin oxide (ITO) electrode. Capillary electrophoresis (CE) and amperometric method were used. We investigated the PB surface properties by topography from atomic force microscopy (AFM). Also PB film thickness calibration with respect to deposition time and voltage was used to get better PB surFace. The PB thin film of dense and smooth surface could catalyze redox reaction efficiently. Comparing with CE-ECD microchip using bare-lTO electrode, proposed CE-ECD microchip using PB deposited electrode has shown better sensitivity by determining the detected peak current from the electropherograms while the concentration of tested analyzes was maintained the same. It is verified that detection limit can be lowered for 0.01 mM of dopamine and catechol respectively.

• Korean Journal of Materials Research
• /
• v.17 no.4
• /
• pp.232-235
• /
• 2007

Indium tin oxide (ITO) films were deposited on polycarbonate CR39 substrate using DC magnetron sputtering. ITO thin films were deposited at room temperature because glass-transition temperature of CR39 substrate is $130^{circ}C$ ITO thin films are used as bottom and top electrodes and for organic thin film transparent transistor (OTFT). The electrodes electrical properties of ITO thin films and their optical transparency properties in the visible wavelength range (300-800 nm) strongly depend on the volume of oxygen percent. The optimum resistivity and transparency of ITO thin film electrode was achieved with a 75 W plasma power, 10 % volume of oxygen and a 27 nm/min deposition rate. Above 85% transparency in the visible wavelength range (300-800 nm) was measured without post annealing process, and resistivity as low as $9.83{\times}^{TM}10^{-4}{\Omega}$ cm was measured at thickness of 300 nm.

• Journal of the Korean institute of surface engineering
• /
• v.25 no.6
• /
• pp.293-298
• /
• 1992

Various vanadium-oxide thin films were deposited by e-beam and thermal evaporation of V2O5, V2O3, and VO2 powders. Films with thickness of $2000\AA$ were subjected to annealing at $300^{\circ}C$~$450^{\circ}C$ in N2 atmosphere for the crystallization and desification purposes. For the films deposited from V2O5 and VO2 sources, sources, Magneli (VnO2n-1$ 4\leq$ $n\leq$ 8) and VO2 phase appeared at $300^{\circ}C$, respectively, but VO2 phase also transformed into Magneli phase at $450^{\circ}C$ by severe reduction. On the contrary, VO2/VO mixed phases resulted from congruent evaporation of V2O3 unchanged after the same annealing treatment due to the balanced reduction and oxidation of VO2 and VO whcih have different equilibrium O2 pressures. It is suggested that the annealing in the controlled oxidation atmosphere or the deposition using mixed oxide sources are necessary to get the film containing VO2 phase.

• Journal of the Korean institute of surface engineering
• /
• v.31 no.2
• /
• pp.109-116
• /
• 1998

Highly transparent conductive pure and fluorine-doped tin oxide(FT0, $SnO_2$ : F) films have been prepared by low pressure metal organic chemical vapor deposition (LP-MOCVD) from various mixtures of tetramethyitin(TMT) with oxygen or oxygen containing ozone. The properties of TO films have been changed with the variation of gases, flow rate, and substrate temperature. The nsing of oxygen containing ozone instead of pure oxygen, reduced substrate temperature by 100-$150^{\circ}C$ while maintaining same thickness. The films prepared by using ozone showed the resistivity in the range from $10^~2$ to $10^{~3}\Omega$cm, and the mobiiity from 10 to $14\textrm{cm}^2$/Vs. Fluorine-doped tin oxide films had properties such as the resistivity about $10^{-4}\Omega$cm, and the mobility from 14 to $19\textrm{cm}^2$/Vs.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2009.10a
• /
• pp.385-388
• /
• 2009

We have investigated the effect of the device structure on the performance of polycrystalline ZnO TFT and amorphous AZTO TFT with top gate and bottom gate structure. While the mobility of both TFTs showed relatively similar value in a top and bottom gate structure, bias stability was quite different depending on the device structure. Top gate TFT showed much less Vth shift under positive bias stress compared to that of bottom gate TFT. We attributed this different behavior to the defects formation on the gate insulator induced by energetic bombardment during the active layer deposition in a bottom gate TFT. We suggest the top gate oxide TFT would show more stable behavior under the Vgs bias.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2007.08a
• /
• pp.190-192
• /
• 2007

A neutral beam system has been developed to produce hyperthermal neutral beams composed of indium, tin, and oxygen atoms. Using these hyper thermal neutral beams with energies in the range of tens of eV, high quality indium-tin oxide (ITO) thin films have been obtained on glass substrates at room temperature. The optical transmittance of the films is higher than 85% at a wavelength of 550 nm and the electrical resistivity is lower than $1{\times}10^{-3}{\Omega}cm$.

• Electrical & Electronic Materials
• /
• v.8 no.6
• /
• pp.693-698
• /
• 1995

We fabricated Zinc Oxide transparent conductive thin films with 2wt% of A1203 doping using rf magnetron sputtering. And we investigated electrical and optical characteristics of them which were made with conditions ; rf power 60-300W, thickness of film 3000 11000.angs.. Resistivity, carrier concentration and Hall mobility were investigated for electrical characteristics. Transmittance and optical band gap were investigated with Spectrophotometer in the wavelength range between 200-900 nm. As a result, ZnO thin film fabricated with rf power of 180W and thickness of 5000.angs. showed the best properties. At the best condition, the sample has resistivity of 1*10$\^$-4/.ohm.cm and transmittance of 95% in the visible range.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2004.04a
• /
• pp.35-38
• /
• 2004

Ozone is useful oxidizing gas for the fabrication of oxide thin films. Accordingly researching on oxidizing gas is required. In order to obtain high quality oxide thin films, higher ozone concentration is necessary. In this paper oxidation property was evaluated relation between oxide gas pressure and inverse temperature(CuO reaction). The obtained condition was formulated by the fabrication of Cu metal thin film by co-deposition using the Ion Beam Sputtering method. Because the CuO phase peak appeared at the XRD evaluation of the CuO thin film using ozone gas, this study has succeeded in the fabrication of the CuO phase at $825^{\circ}C$.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2010.02a
• /
• pp.477-477
• /
• 2010

태양전지용 TCO(Transfer Conductivity Oxide)는 가시광선 영역에서 높은 광 투과도(optical transmittance), 낮은 저항(resistivity), 우수한 박막 표면 거칠기(roughness) 등의 특성이 요구된다. 현재 가장 많이 사용되는 투명전극은 ITO(Indium Tin Oxide)가 보편적이다. 하지만 ITO에 사용되는 원료 재료인 In이 상대적으로 열적 안정성이 낮아 제조과정에서 필수적으로 수반되는 열처리가 제한적이며, 높은 원료 단가로 인하여 경제적인 측면에서 약점으로 지적되고 있다. 이러한 ITO 투명전극의 대체 재료로서 최근 ZnO 박막의 연구가 활발히 이루어지고 있다. MOCVD(Metal-Organic chemical vapor deposition)로 Soda lime glass 기판위에 약 900nm의 두께로 증착한 BZO(Boron-zinc-oxide)박막을 수소 플라즈마 처리공정을 한 뒤 산소 플라즈마를 이용하여 재처리 하였다. 산소 플라즈마 처리 공정은 RIE(Reactive Ion Etching)방식의 플라즈마 처리 장치를 사용하였고 공정 조건은 13.56 MHz의 RF주파수를 사용하여 RF 전력, 압력, 기판 온도 등을 변화시켜 BZO 박막의 전기적 특성을 측정 및 분석하였다.