• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.411.1-411.1
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• 2016

In this study, we examined the effects of boron doping on the dielectric reliability of solution processed aluminum oxide ($Al_2O_3$). When boron is doped in aluminum oxide, the hysteresis reliability is improved from 0.5 to 0.4 V in comparison with the undoped aluminum oxide. And the accumulation capacitance is increased when boron was doped, which implying the reduction of the thickness of dielectric film. The improved dielectric reliability of boron-doped aluminum oxide is originated from the small ionic radius of boron ion and the stronger bonding strength between boron and oxygen ions than that of between aluminum and oxygen ions. Strong boron-oxygen ion bonding in aluminum oxide results dielectric film denser and thinner. The leakage current of aluminum oxide also reduced when boron was doped in aluminum oxide.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.555-555
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• 2012

The thermal stability of poly(sodium 4-styrenesulfonate) intercalated graphite oxide has been investigated using a differential scanning calorimeter. The poly(sodium 4-styrenesulfonate) intercalated graphite oxide composite shows a prominent exothermic reaction near $207^{\circ}C$ and an endothermic reaction near $453^{\circ}C$. Graphite oxide is responsible for the exothermic reaction while the endothermic reaction is caused by the poly(sodium 4-styrenesulfonate) used in the synthesis of poly(sodium 4-styrenesulfonate) intercalated graphite oxide. The onset temperature of the exothermic reaction of poly(sodium 4-styrenesulfonate) intercalated graphite oxide decreased by $92^{\circ}C$ in comparison with that of graphite oxide, indicating the addition of poly(sodium 4-styrenesulfonate) in the composite has diminished the thermal stability of graphite oxide.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2018.06a
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• pp.68-68
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• 2018

Nanoporous or nanotubular metal oxide can be fabricated by anodization of metal substrate in fluoride contained electrolytes. The approach allows various transition metals such as Zr, Hf, Nb, Ta to form highly ordered oxide nanostructures. These oxide nanostructures have various advantages such as high surface area, fast electron transport rate and slow recombination in semiconductive materials. Recently, vanadium oxide nanostructures have been drawn attentions due to their superior electronic, catalytic and ion insertion properties. However, anodization of vanadium metal to form oxide layers is relatively difficult due to ease formation of highly soluble complex in water contained electrolyte during anodization. Yang et al. reported $[TiF_6]^{2-}$ or $[BF_4]^-$ in electrolyte helps to formation of stable oxide layer [1, 2]. However, the reported approaches are very sensitive in other parameters. In this presentation, we deal with the other important key parameters to form ordered anodic vanadium oxide such as pH, temperatures and applied potential.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.32A no.7
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• pp.58-68
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• 1995

Polysilicon capacitors with pyrogenic oxide and TEOX oxide as insulators were fabricated to develop capacitors which can be applied to analog CMOS IC, and the characteristics of the capacitors were compared with each other. The morphology of bottom polysilicon in pyrogenic oxide capacitor is degraded due to the generaged protuberances of the polysilicon grain during oxidataion. The polysilican capacitor with pyrogenic oxide of 57 nm thickness showed that the effective potential barrier height of 0.45 eV is much less than that of MOS capacitor (3.2 eV)when the top electrode is biased with a positive volgate. The morphology of the polysilicon capacitor with TEOS oxide, however, was not degraded during oxide deposition by LPCVD. The polysilicon capacitor with TEOS oxide of 54 nm thickness showed the effective potential barrier height of 1.28 eV when the top electrode is biased with a negative voltage. Therefore, it is concluded that the polysilicon capacitor with TEOS oxide is more applicable to analog CMOS IC than the pyrogenic oxide polysilicon capacitor.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.10
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• pp.778-783
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• 1998

Film characteristics of thin ONO dielectric layers for MONOS(metal-oxide-nitride-oxide-semiconductor) EEPROM was investigated by TEM, AES and AFM. Seocnd derivative spectra of Auger Si LVV overlapping peak provide useful information fot chemical state analysis of superthin film. The ONO film with dimension of tunnel oxide 23$\AA$, nitride 33$\AA$, and blocking oxide 40$\AA$ was fabricated. During deposition of the LPCVD nitride film on tunnel oxide, this thin oxide was nitrized. When the blocking oxide was deposited on the nitride film, the oxygen not only oxidized the nitride surface, but diffused through the nitride. The results of ONO film analysis exhibits that it is made up of $SiO_2$ (blocking oxide)/O-rich SiON(interface)/N-rich SiON(nitride)/ O-rich SiON(tunnel oxide)

• Journal of the Korean institute of surface engineering
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• v.53 no.1
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• pp.36-42
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• 2020

In this study, two novel methods to measure the surface hardness of anodic oxide films on aluminum alloys are reported. The first method is to impregnate oil-based ink into pores in the anodic oxide film and then to clean the ink on the surface using ethanol, resulting in an impregnation of inks only inside of the pores in anodic oxide film. The second method is to coat the anodic oxide film surface with thin Au layer less than 0.1 ?. Both the ink-impregnating method and Au-coating method provided clear indentation marks on the anodic oxide film surface when it was indented using a pyramidal-diamond penetrator. Thus, Vickers hardness of anodic oxide films on aluminium alloy could be measured successfully and precisely from the anodic film surface. In addition, advantages and disadvantages of the ink-impregnating method and Au-coating method for the measurement of surface hardness of anodic oxide films are discussed.

• Journal of Environmental Science International
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• v.28 no.1
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• pp.99-106
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• 2019

Arsenic is among the heavy metals commonly found in aqueous environments. Iron oxide is known as an efficient adsorbent for the arsenic. A new synthetic method was applied to provide iron oxide giving a large specific surface area. The mixing method affects the formation of iron oxide. Ultrasonic waves assisted the formation of very fine iron oxide in an organic phase. The synthesized iron oxide is amorphous type with a high surface area of more than $181.3m^2/g$. Sorption capacity of the synthesized adsorbent was relatively very high for arsenic and varied depending on the oxidation state of arsenic: a higher capacity was obtained with As(V). Lower solution pH provided a higher sorption capacity for As(V). The competitive effect of co-exist anions such as chloride, nitrate, and sulfate was minimal in sorption capacity of the iron oxide for arsenic.

• Proceedings of the KIEE Conference
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• 1995.07c
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• pp.1442-1444
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• 1995

In this study, we confirmed that the crystallinity and the mechanical properties of polycrystalline Silicon(poly-Si) deposited on the poly-oxide are better than those of poly-Si on the conventional sacrificial layers that is CVD oxide layer or PSG. But the etch rate of poly-oxide is poor than that of the CVD oxide layer or PSG. Therefore, to make the best use of small stress and fast etch rate, we fabricated the double oxide layer; 10%-thick poly-oxide on 90%-thick CVD oxide or PSG. To estimate structure deformation by stress, we fabricated the test structures; cantilever. bridge and ring/beam structure and estimated by SEM. As the results, all structure is expressed the deformed structure by residual stress(tensile stress) and the deformation of the structure layer on the double oxide layer is small compared with that of the structure layer on the CVD oxide layer or PSG. And, the etch rate of the double oxide layer is enhanced compared with that of the poly-oxide.

• Transactions of the Korean hydrogen and new energy society
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• v.17 no.1
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• pp.39-46
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• 2006

Highly ordered Li dispersed nickel oxide nanotubes were prepared with anodic aluminum oxide (AAO) template for hydrogen storage. Electron microscope results showed that uniform length and diameter of nickel oxide nanotubes were obtained. The wall thickness and outer diameter of nickel oxide nanotubes are about 40 - 50 nm and 200 - 400 nm, respectively. It was observed that the diameter of nickel oxide nanotubes is bigger than the pore diameter of AAO template. Li dispersed nickel oxide were consisted of nanoflakes and had structures of nanotubes and nanorods. For increasing the hydrogen adsorption and desorption capacity, the Li dispersed nickel oxide nanotubes were fluorinated. The fluorinated Li dispersed nickel oxide nanotubes showed 1.65 wt% of the hydrogen adsorption capacities at 77 K under 47 atm.

• Proceedings of the IEEK Conference
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• 2001.06b
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• pp.29-32
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• 2001

In this paper, the thermal oxidation behaviors and the electrical characteristics of the thermal oxide grown on SiC are discussed. For these studies the oxide layers with various thickness were on SiC in wet $O_2$ or dry $O_2$ at l15$0^{\circ}C$ and the MOS capacitors using the 350$\AA$ gate oxide grown in wet $O_2$ were fabricated and electrically characterized. It was found from the experimental results that the oxidation rate of SiC with the Si-face and with the carbon-face were about 10% and 50% of oxidation rate of Si. The C-V measurement results of the SiC oxide showed abnormal hysterisis properties which had ever been not observed for the Si oxide. And the hysterisis behavior was seen more significant when initial bias voltage was more negative or more positive. The hysterisis property of the SiC oxide was believed to be due the substantial amount of the deep level traps to exist at the interface between the oxide and the SiC substrate. The leakage of the SiC oxide was found to be one order larger than the Si oxide, but the breakdown strength was almost equal to that of the Si oxide.