• 센서학회지
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• 제1권2호
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• pp.117-123
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• 1992

적층구조의 Pt-Sn 박막을 히터 위에서 열산화하여 $Pt-SnO_{2-x}$ 박막형 CO 가스감지소자를 제조하였다. 열증착법으로 증착된 Sn의 두께는 $4000{\AA}$이었으며 그 위에 D.C. sputtering법으로 증착된 Pt의 두께는 $14{\AA}{\sim}71{\AA}$ 이었다. XRD 분석에서 $Pt-SnO_{2-x}$ 박막은 $200{\AA}$ 정도의 입경과 주방향성이 (110)인 $(SnO_{2}){\cdot}6T$ 결정상을 보였다. $Pt-SnO_{2-x}$ 박막소자(Pt 두께 : $43{\AA}$)는 6000 ppm의 CO에 대해 80% 정도의 감도와 CO에 대해 높은 선택도를 나타내었다. 그리고 CO에 고감도를 갖는 $Pt-SnO_{2-x}$ 박막소자의 열산화 온도와 동작온도가 각각 $500^{\circ}C$와 $200^{\circ}C$이었다.

• 한국재료학회지
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• 제6권7호
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• pp.742-751
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• 1996

Ti-48AI(at.%) 모재위에 RF magnetron sputtering을 이용하여 AI-21Ti-23Cr(at.%) 조성의 박막을 코팅하였다. RF power 200W, 증착압력 0.8Pa, 증착온도 573k에서 증착된 시편의 가장 우수한 고온재산화성을 나타내었다. 573K에서 증착된 AI-21Ti-23Cr 코팅층은 증착시에는 비정질을 형성하나 산화시험동안 결정화가 진행되며, 표면에는 치밀한 ${Al}_{2}{O}_{3}$층이 형성되었다. 573K에서 코팅된 시편에 대하여 1073K, 1173K 및 1273K에서 100시간동안 등온산화시험을 실시하였다. 무게증량곡선은 모든 온도에서 parabolic law를 따르는 안정된 산화거동을 보였으며 이와같은 산화특성은 표면에 치밀한 ${Al}_{2}{O}_{3}$층이 형성되었기 때문인 것으로 판단된다. 1273K에서 산화시험 후 코팅층의 기지는 고온산화에 따른 AI원자의 소모와 모재로부터의 Ti원자의 확산에 의해 TiAICr상을 형성하였으며, 무게증량은 낮은 온도에 비해 다소 크게 증가하는 경향을 나타내었다.

• 대한의용생체공학회:의공학회지
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• 제14권4호
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• pp.333-340
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• 1993

The high biocompatibility of titanium is connected with the high corrosion resistance of the surface oxide, its high dielectric constant, and some other specific biochemical properties of the oxide. The corrosion resistance of titanium can be improved with the formation of passive film by anodic oxidation. In other to characterize the titantium oxlde film formed by anodic oxidation, titanium plates were anodized in 0.5M $H_3SO_4$ electrolyte at voltages between 5V and 100v. The oxide film was examined by an X-Ray Diffractometer(XRD) and a Scanning Electron Microscope(SEM). In addition, the corrosion resistance of oxide film was tested by dipping in physiological NaCl,5% HCI,5% $H_3PO_4$ and its biocompatability was evaluated by the fibroblast-like cell culture. The results obtained are as follows : 1. The thickness of surface oxide and micropore are increased with the increase of electrode potential and formed deeply along the grain boundary. 2. The solubilities of titanium in electrolyte solution shows that the anodized titanium has more corrosion resistance than the untreated pure titanium. 3. The biocomatibility of anodized titanium is superior to untreated pure titanium.

• 대한화학회지
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• 제56권5호
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• pp.542-547
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• 2012

Borate 완충용액에서 Fe의 산화 반응 경로와 생성된 산화피막의 전기적 특성을 조사하였다. Fe는 pH에 의존하는 두 가지의 반응 경로에 의하여 산화되었으며 산화된 피막은 Mott-Schottky 식이 적용되는 n-형 반도체 성질을 가지고 있음을 알 수 있었다.

• Bulletin of the Korean Chemical Society
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• 제29권5호
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• pp.988-992
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• 2008

A poly(methyl red) film-modified glassy carbon electrode (PMRE) was fabricated for determination of norfloxacin (NFX). The electrochemical behavior of NFX was investigated and a well-defined oxidation peak with high sensitivity was observed at the film electrode. PMRE greatly enhanced the oxidation peak current of NFX owing to the extraordinary properties of poly(methyl red) film. Based on this, a sensitive and simple voltammetric method was developed for measurement of NFX. A sensitive linear voltammetric response for NFX was obtained in the concentration range of $1\;{\times}\;10^{-6}\;-\;1\;{\times}\;10^{-4}$ mol/L and the detection limit was $1\;{\times}\;10^{-7}$ mol/L using linear sweep voltammetry (LSV). The proposed method possessed advantages such as low detection limit, fast response, low cost and simplicity. The practical application of this new analytical method was demonstrated with NFX pharmaceuticals.

• Corrosion Science and Technology
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• 제9권1호
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• pp.8-11
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• 2010

During PEO (plasma-electrolytic-oxidation) treatment of titanium, the relationship between the thickness of oxide film and the measured electrical information was investigated. A simple real time monitoring method based on the electrical information being gathered during PEO treatment is proposed. The proposed method utilizes the current flowing from a high frequency voltage source to calculate the resistance of an oxide film, which is converted into the thickness of an oxide film. This monitoring method can be implemented in PEO system in which an oxide film is grown by constant or pulsed voltage/current sources.

• E2M - 전기 전자와 첨단 소재
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• 제7권2호
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• pp.145-151
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• 1994

The multi-dielectric layer SiOz/Si3N4/SiO2(ONO) is used to scale down the memory device. In this paper, the change of composition in ONO layer due to the process condition and the conduction mechanism are observed. The composition of the oxide film grown through the oxidation of nitride film is analyzed using auger electron spectroscopy(AES). AES results show that oxygen concentration increases at the interface between oxide and nitride layers as the thickness -of the top oxide layer increases. Results of I-V measurement show that the insulating properties improve as the thickness of the top oxide layer increases. But when the thickness of the nitride layer decreases below 63.angs, insulating peoperties of film 28.angs. of top oxide and film 35.angs. turn over showing that insulating property of film 28.angs. of top oxide is better than that of film 35.angs. of top oxide. This phenomenon of turn over is thought as the result of generation of surface state due to oxygen flow into nitride during oxidation process. As the thickness of the top oxide and nitride increases, the electrical breakdown field increases, but when the thickness of top oxide reaches 35.angs, the same phenomenon of turn over occurs. Optimum film thickness for scaled multi-layer dielectric of memory device SONOS is estimated to be 63.angs. of nitride layer and 28.angs. of top oxide layer. In this case, maximum electrical breakdown field and leakage current are 18.5[MV/cm] and $8{\times}{10^-12}$[A], respectively.

• 한국세라믹학회지
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• 제31권9호
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• pp.1060-1068
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• 1994

Stable zirconia sol was prepared from zirconium butoxide Zr(OC4O9)4 as a precursor and ethylacetoacetate(EAcAc) or diethylene glycol(DEG) as a chelating agent under ambient agent under ambient atmosphere by Sol-Gel process. The sythesized sol was coated on 304 stainless steel substrate by dip coating, thereafter zirconia film could be obtained by heat-treatment at $600^{\circ}C$. The characteristics of coating film were determined by FT-IR, XRD, and ellipsometion peak represented Zr-O-Zr bonding of tetragonal phase was shown at 470cm-1. Crystallization of zirconia gel and film from amorphous state to tetragonal phase started at 40$0^{\circ}C$, and then transformed into monoclinic phase around $700^{\circ}C$. Zirconia film coated on 304 stainless steel substrate showed relatively low porosity of 16% when it was coated with 0.4M zirconia sol and thereafter heat-treated at 80$0^{\circ}C$ and the film was densified continuously up to 90$0^{\circ}C$. The zirconia film of 10 nm thick acted as a protective layer against oxidation up to $700^{\circ}C$.

• 한국표면공학회지
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• 제34권5호
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• pp.421-428
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• 2001

New WC-CrN superlattice film was deposited on Si substrate (500$\mu\textrm{m}$) using cathodic arc ion plating system. The microstructure and mechanical properties of the film depend on the superlattice period (λ). In the X-ray diffraction analysis (XRD), preferred orientation of microstructure was changed according to various superlattice periods(λ). During the Transmission Electron Microscope analysis (TEM), microstructure and superlattice period (λ) of the WC - CrN superlattice film was confirmed. Hardness and adhesion of the deposited film was evaluated by nanoindentation test and scratch test, respectively. As a result of nanoindentation test, the hardness of WC - CrN superlattice film was gained about 40GPa at superlattice period (λ) with 7nm. Also residual stress with various superlattice period (λ) was measured on Si wafer (100$\mu\textrm{m}$) by conventional beam-bending technique. The residual stress of the film was reduced to a value of 0.2 GPa by introducing Ti - WC buffer layers periodically with a thickness ratio ($t_{buffer}$/$t_{buffer+superlattice}$ ). To the end, for the evaluation of oxidation resistance at the elevated temperature, CrN single layer and WC - CrN superlattice films with various superlattice periods on SKD61 substrate was measured and compared with the oxidation resistance.

• 한국재료학회지
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• 제12권5호
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• pp.327-333
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• 2002

In order to obtain the oxidation layer for SiC MOS, the oxide layers by thermal oxidation process with dry and wet method were deposited and characterized. Deposition temperature for oxidation layer was $1100^{\circ}C$~130$0^{\circ}C$ by $O_2$ and Ar atmosphere. The oxide thickness, surface morphology, and interface characteristic of deposited oxide layers were measurement by ellipsometer, SEM, TEM, AFM, and SIMS. Thickness of oxidation layer was confirmed 50nm and 90nm to with deposition temperature at $1150^{\circ}C$ and $1200{\circ}C$ for dry 4 hours and wet 1 hour, respectively. For the high purity oxidation layer, the necessity of sacrificial oxidation which is etched for the removal of the defeats on the wafer after quickly thermal oxidation was confirmed.