• Korean Journal of Food Science and Technology
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• v.44 no.3
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• pp.287-292
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• 2012

Light effects on temperature dependence of safflower oil oxidation and tocopherol degradation were studied. Safflower oil was oxidized at 20, 40, 60, or $80^{\circ}C$ for 30, 30, 15, and 6 days, respectively, in the dark or under light. Oil oxidation was evaluated with peroxide value (POV) and conjugated dienoic acid (CDA) value, and tocopherols were monitored by HPLC. Safflower oil consisted of palmitic, stearic, oleic, and linoleic acids at 7.3, 2.0, 14.2, and 76.6%, respectively, with tocopherols at 1157.1 mg/kg. Peroxide and CDA values of safflower oil increased while tocopherol contents decreased with the oxidation time and temperature. Light increased and accelerated the oil oxidation and tocopherol degradation. Temperature dependence of the oil oxidation and tocopherol degradation was higher in the dark rather than under light. The results suggest that temperature control could be more essential in the dark rather than under light with regard to the oxidative stability of safflower oil.

• Journal of the Korean Magnetics Society
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• v.14 no.3
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• pp.99-104
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• 2004

We have studied to understand the barrier and interface qualities and structural changes through measuring temperature dependent spin-polarization as functions of plasma oxidation time and annealing time. Magnetic tunnel junctions consisting of SiO2$_2$/Ta 5/CoFe 17/IrMn 7.5/CoFe 5/Al 1.6-Ox/CoFe 5/Ta 5 (numbers in nm) were deposited and annealed when necessary. A 30 s,40 s oxidized sample showed the lowest spin-polarization values. It is presumed that tunneling electrons were depolarized and scattered by residual paramagnetic Al due to under-oxidation. On the contrary, a 60s, 70 s oxidized sample might have experienced over-oxidation, where partially oxidized magnetic dead layer was formed on top of the bottom CoFe electrode. The magnetic dead layer is known to increase the probability of spin-flip scattering. Therefore it showed a higher temperature dependence than that of the optimum sample (50 s oxidation). temperature dependence of 450 K annealed samples was improved when the as-deposited one compared. But the sample underwent 475 K and 500 K annealing exhibits inferior temperature dependence of spin-polarization, indicating that the over-annealed sample became microstucturally degraded.

• Journal of the Korean institute of surface engineering
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• v.34 no.5
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• pp.494-498
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• 2001

Ferromagnets(FM)-Al-$O_{x}$ -Ferromagnets (FM) tunneling junctions were evaluated by changing the fabricating conditions of an Al-X$/_{x}$ layer. The junction composed of a thicker Al-$O_{x}$ shows the low resistance and the stable MR ratio about 16% in a wide range of oxidation time. For the junctions with the thinner Al-$O_{x}$ , they showed a fast increase of the barrier width as an increase of an oxidation time and exhibited a strong bias dependence. As oxidation time increased, the coercivity ($H_{c}$ ) of bottom Co layer increased gradually due to the local oxidation of Co bottom layer at a interface. However, the small formation of Co oxide did not largely influence on the deterioration of MR ratio.

• Proceedings of the Korean Magnestics Society Conference
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• 2001.10a
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• pp.42-43
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• 2001

• Journal of Korean Society on Water Environment
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• v.18 no.2
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• pp.169-187
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• 2002

The effects of important parameters such as reaction time and pH on the Fenton's process were evaluated using a batch reactor. It was proven that organic materials and heavy metals in leachate could be successfully removed by Fenton's reagent. Favorable operation conditions were investigated. It was observed that the reaction between ferrous iron and hydrogen peroxide with the production of hydroxyl radical was almost complete in 10 minutes. That is, the oxidation of organic materials by Fenton's reagent was so fast that it was complete in 30 minutes with batch experiments. With the formation of carbonic acid, pH of the batch reactor decreased to favorable acidic conditions without acid addition. The oxidation of organic materials in the leachate showed a pH dependence and was most efficient in the pH range of 2-3.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.4
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• pp.373-379
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• 2002

We investigated the evolution of magnetoresistance and magnetic property of tunneling magnetoresistive(TMR) device with microstructure and plasma oxidation time. TMR devices have potential applications for non volatile MRAM and high density HDD reading head. We prepared the tunnel magnetoresistance(TMR) devices of Ta($50{\AA}$)/NiFe($50{\AA}$)/IrMn($150{\AA}$)/CoFe($50{\AA}$)/Al($13{\AA}$)-O/CoFe($40{\AA}$)/FiFe($400{\AA}$)/Ta(($50{\AA}$) structure which have $100{\times}100\mu\textrm{m}^2$ junction area on $2.5{\times}2.5\textrm{cm}^2$ Si/$SiO_2$(($1000{\AA}$) substrates by an inductively coupled plasma(ICP) magnetron sputter. We fabricated the insulating layer using an ICP plasma oxidation method by with various oxidation time from 30 sec to 360 sec, and measured resistances and magnetoresistance(MR) ratios of TMR devices. We found that the oxidized sample for oxidation time of 80 sec showed the highest MR radio of 30.31 %, while the calculated value regarding inhomogeneous current effect indicated 25.18 %. We used transmission electron microscope(TEM) to investigate microstructural evolution of insulating layer. Comparing the cross-sectional TEM images at oxidation time of 150 sec and 360 sec, we found that the thickness and thickness variation of 360 sec-oxidized insulating layer became 30% and 40% larger than those of 150 sec-oxidized layer, repectively. Therefore, our results imply that increase of thickness variation with oxidation time may be one of the major treasons of the MR decrease.

• Korean Journal of Materials Research
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• v.24 no.5
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• pp.236-242
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• 2014

Fabrication of reaction-bonded $Al_2O_3$ (RBAO) ceramics using Al-Zn-Mg alloy powder was studied in order to improve traditional RBAO ceramic processing using Al powder. The influence on reaction-bonding and microstructure, as well as on physical and mechanical properties, of the particulate characteristics of the $Al_2O_3$-Al alloy powder mixtures after milling, was revealed. Variation of the particulate characteristics of this $Al_2O_3$-Al alloy powder mixture with milling time was reported previously. To start, the $Al_2O_3$-Al alloy powder mixture was milled, reaction-bonded, post-sintered, and characterized. During reaction-bonding of the $Al_2O_3$-Al alloy powder mixture compacts, oxidation of the Al alloy took place in two stages, that is, there was solid- and liquid-state oxidation of the Al alloy. The solid-state oxidation exhibited strong dependence on the density of surface defects on the Al-alloy particles formed during milling. Higher milling efficiency resulted in less participation of the Al alloy in reaction-bonding. This was because of its consumption by chemical reactions during milling, and subsequent powder handling, and could be rather harmful in the case of over-milling. In contrast to very little dependence of oxidation of the Al alloy on its particle size after milling, the relative density, microstructure, and flexural strength were strongly dependent on particle size after milling (i.e., on milling efficiency). The relative density and 4-point flexural strength of the RBAO ceramics in this study were ~98% and ~365 MPa, respectively, after post-sintering at $1,600^{\circ}C$.

• Proceedings of the KIEE Conference
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• 1992.07b
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• pp.969-972
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• 1992

It is shown that the ac breakdown strength, treeing phenomena, oxidation level, and crystallinity of unaged and aged distribution CV cables vary with XLPE insulations (characterizing anti-oxidation) and curing process. The maximum size of bow-tie tree in insulation influenced on the decrease of ac breakdown strength and the increase of oxidation level and crystallinity of XLPE according to aging time lead to increase the size and density of bow-tie trees.

• Journal of the Korean Ceramic Society
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• v.27 no.5
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• pp.652-660
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• 1990

Oxidation of Mn-Zn ferrite was made in air at various temperatures ranging from 400$^{\circ}C$ to 1150$^{\circ}C$. Subsequent reduction fo these oxidized samples was also made in air at 1300-1350$^{\circ}C$ where the spinel phase of Mn-Zn ferrite is stable. Morphological observation revealed that the shape of precipitated hematite was plate or lath type on the close-packed habit plane of {111} ferrite which has a definite orientation relationship. The growth of precipitates showed the behavior fo parabolic dependence of the oxidating time. An apparent activation energy for the growth was found to be 125${\pm}$3Kcal/mol. The fact that pores are observed along the precipitates illustrates the oxidation to occur dominantly by the counterdiffusion of cations and ction vacancies. For the reductio reaction pores are found to form at the site once occupied by the precipitates and at the surface. This observation illustrates that the oxygen volitalization from interior region to the surface is the dominant process for the reduction reaction.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.32A no.3
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• pp.68-77
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• 1995

Characteristics of electron cyclotron resonance (ECR) plasma thermal oxide grown at low-temperature have been investigated. The effects of several process parameters such as substrate temperature, microwave power, gas flow rate, and process pressure on the growth rate of the oxide have been also investigated. It was found that the plasma density, reactive ion species, is strongly related to the growth rate of ECR plasma oxied. It was also found that the plasma density increases with microwave power while it decreases with decreasing O2 flow rate. The oxidation time dependence of the oxide thichness showed parabolic characteristics. Considering ECR plasma thermal oxidation at low-temperature, the linear as well as parabolic rate constants calculated from fitting data by using the Deal-Grove model was very large in comparison with conventional thermal oxidation. The ECR plasma oxide grown on (100) crystalline-Si wafer exhibited good electrical characteristics which are comparable to those of thermal oxide: fixed oxide charge(N$_{ff}$)= 7${\times}10^{10}cm^{-2}$, interface state density(N$_{it}$)=4${\times}10^[10}cm^{-2}eV^{-1}$, and breakdown field > 8MV/cm.