• Applied Science and Convergence Technology
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• 제26권5호
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• pp.133-138
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• 2017

We investigated the interface defect engineering and reaction mechanism of reduced transition layer and nitride layer in the active plasma process on 4H-SiC by the plasma reaction with the rapid processing time at the room temperature. Through the combination of experiment and theoretical studies, we clearly observed that advanced active plasma process on 4H-SiC of oxidation and nitridation have improved electrical properties by the stable bond structure and decrease of the interfacial defects. In the plasma oxidation system, we showed that plasma oxide on SiC has enhanced electrical characteristics than the thermally oxidation and suppressed generation of the interface trap density. The decrease of the defect states in transition layer and stress induced leakage current (SILC) clearly showed that plasma process enhances quality of $SiO_2$ by the reduction of transition layer due to the controlled interstitial C atoms. And in another processes, the Plasma Nitridation (PN) system, we investigated the modification in bond structure in the nitride SiC surface by the rapid PN process. We observed that converted N reacted through spontaneous incorporation the SiC sub-surface, resulting in N atoms converted to C-site by the low bond energy. In particular, electrical properties exhibited that the generated trap states was suppressed with the nitrided layer. The results of active plasma oxidation and nitridation system suggest plasma processes on SiC of rapid and low temperature process, compare with the traditional gas annealing process with high temperature and long process time.

• Journal of Welding and Joining
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• 제28권4호
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• pp.61-66
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• 2010

Silicon nitride is widely used as an engineering ceramics because it has high strength, abrasion resistance and corrosion resistance even at high temperature. However, machining of silicon nitride is difficult due to its high hardness and brittleness. Laser assisted machining(LAM) allows effective cutting using CBN tool by locally heating the cutting part to the softening temperature of YSiAlON using the laser beam. The effect of preheating depending on process parameters were studied to find out the oxidation mechanism. If silicon nitride is sufficiently preheated, the surface is oxidized and $N_2$ gas is formed and escapes from the material, thereby making the cutting process more advantageous. During laser preheating process before machining, high temperature results in strong oxidation which makes the bloating, silicate layers and micro cracks. Using the results of these experiments, preheating characteristics and oxidation behavior were found out.

• 동력기계공학회지
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• 제17권4호
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• pp.109-114
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• 2013

In this study, the microstructure, mechanical properties and high temperature oxidation characteristics of HiSiMo and HiSiMoM ductile iron for exhaust manifold were investigated. The HiSiMoM ductile iron was developed by optimization of alloying element addition and casting design. The exhaust manifold prototype was fabricated using the HiSiMoM iron and this resulted in the weight saving of 0.73kg. The microstructures of the HiSiMo and HiSiMoM irons were similar each other and graphite nodularity was 89% and 93% respectively. Tensile strengths of them were 663.5 and 674.4 MPa and Brinell hardness were 235.3 and 243.9 respectively. Both irons showed parabolic weight gain behavior in high temperature oxidation atmosphere. Oxidation layer was divided into external and internal layers. The weight gain of the HiSiMoM iron was lower than that of the HiSiMo iron after isothermal oxidation test at $900^{\circ}C$. This should be rationalized by higher Si enrichment at the interface of the matrix and internal layer of the HiSiMoM iron.

• Tribology and Lubricants
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• 제16권4호
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• pp.282-288
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• 2000

A sliding friction and wear test for silicon nitride (Si,N4) was conducted using a ball-on-disk specimen configuration. The material used in this study was HIPed silicon nitride. The tests were carried out from room temperature to 1000$^{\circ}C$ using self-mated silicon nitride couples in laboratory air. The worn surfaces were observed by SEM and the debris particles from the worn surfaces were analyzed for oxidation by XPS. The normal load was found to have a more significant influence on the friction coefficient of the silicon nitride than an elevated temperature. The specific wear rate was found to decrease along with the sliding distance. The specific wear rate at 29.4 N and 1000$^{\circ}C$ was 292 times larger than that at room temperature. The main wear mechanism from room temperature to 750$^{\circ}C$ was caused by brittle fracture whereas from 750$^{\circ}C$ to 1000$^{\circ}C$ the wear mechanism was mainly influenced by the oxidation of silicon nitride due to the increased temperature. The oxidation of silicon nitride at a high temperature was a significant factor in the wear increase.

• 한국표면공학회지
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• 제29권4호
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• pp.268-277
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• 1996

Boronizing treatment of Microalloyed steel has been investigated by mean of Boronizing paste mainly consisted of $B_4C$ at various temperatures and times. The micro hardness of the boride layers were about HV 1200~1500. The thickness of the boride layer were increased with an increase of square root of treatment time at constant temperature. The activation energy for diffusion of boron in the specimen obtained from the slope of Arrhenius plots was 254 kJ/mol, but 197 kJ/mol for the induction heated specimen. The boride layer had a good corrosion resistance in solutions of 20% HCl and 20% $H_2SO_4$, solution. In 20% $HNO_3$ solution, however, its corrosion resistance increased. The boride layer had a good high temperature oxidation resistance at below $800^{\circ}C$, but at temperature above $900^{\circ}C$, the oxidation resistance decreased as the oxidation temperature.

• 한국소성가공학회:학술대회논문집
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• 한국소성가공학회 2005년도 추계학술대회 논문집
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• pp.330-331
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• 2005

It was found possible to evaluate the temperature at which major scale failure takes place during cooling by installing a most modem acoustic emission(AE) analytical system. Ultra low carbon steel and low carbon steels containing a few minor alloying elements were oxidized in air at 900, 1050 and $1200^{\circ}C$ for 20 min, and then cooled in vacuum at 30, 70 and $110^{\circ}C/min$. The significance of the present research is the evaluation of the spallation temperature and thus the calculation of apparent thermal stress for scale spallation using the difference between oxidation temperature and spallation temperature. They were assessed as 0.22 to 0.68, 0.45 to 1.80, and 0.65 to 1.95 GPa for oxidation at 900, 1050 and $1200^{\circ}C$, respectively.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2016년도 추계학술대회 논문집
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• pp.189-189
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• 2016

In this study, the Al-rich AlTiSiN thin films that consisted of TiN/AlSiN nano-multilayers were deposited on the steel substrate by magnetron sputtering, and their high-temperature oxidation behavior was investigated, which has not yet been adequately studied to date. Since the oxidation behavior of the films depends sensitively on the deposition method and deposition parameters which affect their crystallinity, composition, stoichiometry, thickness, surface roughness, grain size and orientation, the oxidation studies under various conditions are imperative. AlTiSiN nano-multilayer thin films were deposited on a tool steel substrate, and their oxidation behavior of was investigated between 600 and $1000^{\circ}C$ in air. Since the amount of Al which had a high affinity for oxygen was the largest in the film, an ${\alpha}-Al_2O_3-rich$ scale formed, which provided good oxidation resistance. The outer surface scale consisted of ${\alpha}-Al_2O_3$ incoporated with a small amount of Ti, Si, and Fe. Below this outer surface scale, a thin ($Al_2O_3$, $TiO_2$, $SiO_2$)-intermixed scale formed by the inwardly diffusing oxygen. The film oxidized slower than the $TiO_2-forming$ kinetics and TiN films, but faster than ${\alpha}-Al_2O_3-forming$ kinetics. During oxidation, oxygen from the atmosphere diffused inwardly toward the reaction front, whereas nitrogen and the substrate element of iron diffused outwardly to a certain extent.

• 한국세라믹학회지
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• 제55권2호
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• pp.178-184
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• 2018

In the present study, $TiB_2-Co$ composite coatings were thermally sprayed onto the surface of a 304 stainless steel substrate using an atmospheric plasma spray (APS). The phase analysis of the powders and plasma-sprayed coatings was performed using X-ray diffractometry analysis. The microstructures of the coatings were studied by a scanning electron microscope (SEM). The average particle size and flowability of the feedstocks were also measured. Both $TiB_2-32Co$ and $TiB_2-45Co$ (wt.%) coatings possessed typical dense lamellar structures and high-quality adhesion to the substrate. The oxidation behaviors of the coatings were studied at $900^{\circ}C$ in an atmospheric environment. In addition, the cross-sectional images of the oxidized coatings were analyzed by SEM. A thin and well-adhered layer was formed on the surface of both $TiB_2-Co$ coatings, confirming satisfactory high-temperature oxidation resistance. The kinetic curves corresponding to the isothermal oxidation of the coatings illustrated a short transient stage from rapid to slow oxidation during the early portion of the oxidation experiment.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2004년도 ICEIC The International Conference on Electronics Informations and Communications
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• pp.343-347
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• 2004

High oxidation temperature of SiC shows a tendency of carbide formation at the interface which results in poor MOSFET transfer characteristics. Thus we developed oxidation processes in order to get low interface charge densities. N-type 6H-SiC MOS capacitors were fabricated by different oxidation processes: dry, wet, and dry­reoxidation. Gate oxidation and Ar anneal temperature was $1150^{\circ}C.$ Ar annealing was performed after gate oxidation for 30 minutes. Dry-reoxidation condition was $950^{\circ}C,$ H2O ambient for 2 hours. Gate oxide thickness of dry, wet and dry-reoxidation samples were 38.0 nm, 38.7 nm, 38.5 nm, respectively. Mo was adopted for gate electrode. To investigate quality of these gate oxide films, high frequency C- V measurement, gate oxide leakage current, and interface trapped charge densities (Dit) were measured. The interface trapped charge densities (Dit) measured by conductance method was about $4\times10^{10}[cm^{-1}eV^{-1}]$ for dry and wet oxidation, the lowest ever reported, and $1\times10^{11}[cm^{-1}eV^{-1}]$ for dry-reoxidation

• 한국표면공학회지
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• 제28권3호
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• pp.142-151
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• 1995

In this research, a thin layer of Cr was coated on the pure Ni and Inconel 601 by PECVD (Plasma Enhanced Chemical Vapor Deposition) in order to study the effect of Cr on the oxidation behavior at high temperature. Cr coated Inconel 601, which was oxidized at $1100^{\circ}C$ for 24 hours, formed a protective $Cr_2O_3$ oxide layer and the resistance to isothermai oxidation was improved. On the other hand, oxidation resistance of Cr coated Inconel 601 at 100$0^{\circ}C$ was not significantly improved, probably due to the formation or insufficient $Cr_2O_3$ layer. But, when oxidized at $1000^{\circ}C$ and $1100^{\circ}C$ for 100 hours, Cr coated Inconel 601 improved isothermal oxidation resistance by the formation of continuous $Cr_2O_3$ external scale and by the development of $Al_2O_3$ subscales. Cr coated Ni formed inner layer of $Cr_2O_3$ within almost pure NiO, which provided additional cation vacancies, thus increasing the mobility of Ni ions in this region. It is believed that this doping effect resulted in an increase in the observed oxidation rate compared with pure Ni and did not improve the oxidation resistance.