• Journal of the Microelectronics and Packaging Society
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• v.6 no.2
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• pp.45-49
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• 1999

A flammable gas sensor based on the $SnO_2$thin film deposited by the reactive ion assisted deposition was fabricated and ultra-thin Pd layer as catalyst was adsorbed at surface by ion beam sputtering. The initial oxidation states of Pd catalyst were controlled to investigate the role of Pd in the sensing process of inflammale gas sensor through annealing in air and vacuum respectively. The Pd catalyst existing in pure metallic state showed the sensitivity higher than that of PdO. The result might be closely related to the fact that PdO as a surface acceptor would receive electrons via Pd sub-channel from $SnO_2$, and thus which reduces the sensitivity and delay the response time.

• Corrosion Science and Technology
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• v.9 no.6
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• pp.259-264
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• 2010

In continuous hot dip galvanizing process, oxide formation on steel surface has an influence on Zn wetting. High strength automotive steel contains high amount of Si and Mn, where Si-Mn composite oxides such as $Mn_2SiO_4$ or $MnSiO_3$ covers the surface after annealing. Zn wetting depends on how the aluminothermia reaction can reduce the Mn-Si composite oxides and then form inhibition layer such as $Fe_2Al_5$ on the steel surface. The outward diffusion of metallic ions such as $Mn^{2+}$, $Si^{2+}$ in the steel matrix is very important factor for the formation of the surface oxides on the steel surface. The surface state and grain boundaries provide an important role for the diffusion and the surface oxide reactions. Some elements such as P, Sb, and B have a strong affinity for the interface precipitation, and it influence the diffusivity of metallic ions on grain boundaries. B oxide forms very rapildly on the steel surface during the annealing, and this promote complex oxides with $SiO_2$ or MnO. P has inter-reacted with other elements on the grain boundaries and influence the diffusion through on them. Small addition of Sb could suppress the decarburization from steel surface and retards the formation of internal and external selective oxides on the steel surface. Interface control by the trace elements such as Sb could be available to improve the Zn wettability during the hot dip galvanizing.

• Elastomers and Composites
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• v.40 no.1
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• pp.45-52
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• 2005

Synthesis or fullerene oxides[$C_{60}(O)_n$] ($n=1{\sim}4$ or n=1) by fullerene[$C_{60}$] and several oxidants such as 3-chloroperoxy benzoic acid, benzoyl peroxide, trichloroisocyanuric acid, and chromium(VI) oxide took place under microwave irradiation. The reactivity in solid state of fullerene[$C_{60}$] with various oxidants under same microwave rendition increased in order or 3- chloroperoxy benzoic acid > benzoyl peroxide > trichloroisocyanuric acid $\simeq$chromium(VI) oxide. The MALDI-TOF-MS, UV-visible spectra and HPLC analysis confirmed that the products of fullerene oxidation were [$C_{60}(O)_n$] ($n=1{\sim}4$ or n=1).

• Journal of the Korean institute of surface engineering
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• v.52 no.3
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• pp.138-144
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• 2019

In this work, PEO (Plasma Electrolytic Oxidation) film formation behavior of Al6061 alloy was investigated as a function of applied current density of AC at 310 Hz in the range from $120mA/cm^2$ to $300mA/cm^2$ in 0.5 M $Na_2SiO_3$ solution. When applied current density is lower than a critical voltage of about $132mA/cm^2$, voltage reaches a steady-state values less than 120 V without generation of arcs and metallic color of the alloy surface remains. On the other hand, when applied current density exceeds about $132mA/cm^2$, voltage increases continuously with time and arcs are generated at more than 175 V, resulting in the formation of PEO films with grey colors. Two different types of arcs, large size and small number of arcs with orange color, and small size and large number of arcs with white color, were generated at the same time when the PEO film thickness exceeds about $50{\mu}m$, irrespective of applied current density. Formation efficiency of the PEO films was found to increase with increasing applied current density and the growth rate was obtained to be about $5{\mu}m/min$ at $300mA/cm^2$. It was also found that surface roughness of the PEO films with $70{\mu}m$ thickness is not dependent on the applied current density.

• Korean Journal of Metals and Materials
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• v.46 no.11
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• pp.747-754
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• 2008

Recently, the requirement for the ultra thin copper foil increases with smaller and miniaturized electronic components. Therefore, it is important to examine the surface state of substrate depending on the processing parameter during the anodic oxidation. This study investigated the effect of the various electrolyte concentrations on anodizing of titanium anode prior to copper electrodeposition. Different surface morphology of anodized titanium was obtained at different electrolytic concentration 0.5 M to 3.0 M. In addition, the effect that the surfaces and the electrical characteristics on the electrodeposited copper layer was observed. In this study, surface anodized in the group containing 0.5M $H_2SO_4$ shows more uniform copper crystals with low surface roughness. the surface roughness and sheet resistance for 0.5M $H_2SO_4$ group were $1.353{\mu}m$ and $0.104m{\Omega}/sq$, respectively.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.12 no.6
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• pp.304-310
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• 2002

Novel charge trap type memory devices with reoxidized oxynitride gate dielectrics made by NO annealing and reoxidation process of initial oxide on substrate have been fabricated using 0.35 $\mu \textrm{m}$ retrograde twin well CMOS process. The feasibility for application as NVSM memory device and characteristics of traps have been investigated. For the fabrication of gate dielectric, initial oxide layer was grown by wet oxidation at $800^{\circ}C$ and it was reoxidized by wet oxidation at $800^{\circ}C$ after NO annealing to form the nitride layer for charge trap region for 30 minutes at $850^{\circ}C$. The programming conditions are possible in 11 V, 500 $\mu \textrm{s}$ for program and -13 V, 1ms for erase operation. The maximum memory window is 2.28 V. The retention is over 20 years in program state and about 28 hours in erase state, and the endurance is over $3 \times 10^3$P/E cycles. The lateral distributions of interface trap density and memory trap density have been determined by the single junction charge pumping technique. The maximum interface trap density and memory trap density are $4.5 \times 10^{10} \textrm{cm}^2$ and $3.7\times 10^{18}/\textrm{cm}^3$ respectively. After $10^3$ P/E cycles, interlace trap density increases to $2.3\times 10^{12} \textrm{cm}^2$ but memory charges decreases.

• Korean Journal of Food Science and Technology
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• v.23 no.6
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• pp.732-738
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• 1991

Corsoy 79 soybeans were ground into 8-(coarse) and 24-mesh (fine) full-fat soy flours. From the particle size analysis, the 8-mesh full-fat soy flours were found to have larger values for geometric mean diameter and geometric standard deviation. However, the distribution moduli of coarse and fine soy flours were similar and indicated soybeans were nearly 'brittle'. Development of hydrolytic and oxidative rancidities of coarsely and finely ground full-fat soy flours were followed from grinding to 24 hrs later. No increases in peroxide value and conjugated dienes in the oil and hexanal content in the headspace of the flour were observed when the moisture was 10.7% or less. At 14.9% moisture and above, lipid oxidation increased with increased moisture content and storage time. Free fatty acid contents increased slightly at all moisture contents. However, hydrolysis did not exceed 0.06% over the moisture range of 4 to 18%, which is of little practical significance. Fine grinding increased oxidative and hydrolytic rancidities, especially at 14.9% moisture and above. these findings indicate that raw soybeans can be ground to full-fat soy flours and stored up to 24 hrs without undergoing significant lipid and flavor deterioration if the moisture content is 11% or less.

• Journal of the Microelectronics and Packaging Society
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• v.8 no.1
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• pp.27-32
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• 2001

The effect of $V_2O_5$, a donor-type dopant on the degradation of quality factor of ($Zr_{0.8}, Sn_{0.2})TiO_4$was compared with Ta$_2$O$_{5}$ doped ($Zr_{0.8}, Sn_{0.2})TiO_4$ in terms of microstructure, electrical conductivity, and oxidation state of the dopant. It is well known that the addition of the donor type species such as $Ta_2O_5,Nb_2O_5, Sb_2O_5, WO_{3}$, increases the quality factor of ($Zr_{0.8}, Sn_{0.2})TiO_4$due to decrease the oxygen vacancy concentration. Unlike other dopants, however, the addition of $V_2O_5$ decreased the quality factor. The degradation of quality factor of ($Zr_{0.8}, Sn_{0.2})TiO_4$was resulted from the formation of grain boundary phase and $V_2O_5$rich fiber shaped secondary phase, and the increasing the oxygen vacancy concentration due to unstability of oxidation state of vanadium ions in ($Zr_{0.8}, Sn_{0.2})TiO_4$ceramic.c.

• Journal of Korean Society of Environmental Engineers
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• v.31 no.10
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• pp.927-932
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• 2009

Toxic and recalcitrant organic pollutants in wastewaters can be effectively treated when advanced oxidation and biodegradation are combined, ideally with intimate coupling, in which both processes occur simultaneously in the same system. One means to achieve intimate coupling is to coat nanoscale $TiO_2$ on the outside of macroporous biofilm carriers. This study investigated the kinetics of photocatalysis with $TiO_2$-coated porous carriers. The carriers were made of polyvinyl alcohol (PVA) and coated with $TiO_2$ using a low-temperature sol-gel process. The $TiO_2$-coated carriers catalyzed the oxidation of methylene blue (MB) effectively under irradiation of UV light. The overall reaction rate with adsorption and photolysis saturated at high MB concentration, and approached the adsorption rate, which was first order for all MB concent rations. This result indicates that adsorbed MB may have slowed photocatalysis by blocking active sites for photocatalysis. The overall kinetics could be described by a quasi-Langmuir model. The estimated maximum specific (per unit mass of $TiO_2$) transformation rate of MB by the $TiO_2$-coated carriers was four times larger than that obtained from slurry-$TiO_2$ reactors. This observation demonstrated that the $TiO_2$ present as a coating on the carriers maintained high efficiency for transforming recalcitrant organic matter via photocatalysis. These findings serve as a foundation for advancement of an intimate coupling of photocatalysis to biodegradation.

• Bulletin of the Korean Chemical Society
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• v.10 no.6
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• pp.504-509
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• 1989

The effect of oxygen-deficiency on the charge distributions and orbital energies for small copper oxide clusters representing the superconducting materials $YBa_2Cu_3O_x (6{\leq}x{\leq}7)$ were investigated by the extended Huckel molecular orbital (EHMO) method with the tight-binding model. Our calculations show +3 oxidation state of Cu(1) in the $CuO_3$ chain and +2 or +1 of Cu(2) in the $CuO_2$ layers for $YBa_2Cu_3O_7$ with the nominal charge of $Cu_3$ = +7 (or +5), while for $YBa_2Cu_3O_6$ +1 oxidation state of Cu(1) and +3 (or +2) of Cu(2) in the $CuO_2$ layers with the nominal charge of $Cu_3$ = +7 (or +5). For $Cu_3O_{12}$ cluster representing $YBa_2Cu_3O_7$ with the nominal charge of $Cu_3$ = +7 the Cu(2) $d_{{x^2}-{y^2}}$ orbitals in the $CuO_2$ layers is a typical Jahn-Teller $d^9$ system with the partial hole and the Cu(1) $d_{{_z2}-{_y2}}$ orbital in the $CuO_3$ chain contains hole occupancy. For $Cu_3O_{10}$ cluster representing $YBa_2Cu_3O_6$ with the nominal charge of Cu = +5 the orbital character of the highest partially occupied MO (HPOMO) and the lowest completely unoccupied MO (LCUMO) of $Cu_3O_{12}$ representing $YBa_2Cu_3O_7$ with the nominal charge of $Cu_3$ = +7 is reversed, and the character of Cu(1) $d{{x^2}-{y^2}}$ orbital of LCUMO of the $Cu_3O_{12} $cluster is vanished. It is suggested that the local crystal field environment of Cu(1) by the oxygens in the Cu(1) chain may play a vital role in conductivity and superconductivity, either alone or through cooperative electronic coupling with the Cu(2) layers in $YBa_2Cu_3O_7.$.