• Bulletin of the Korean Chemical Society
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• v.17 no.12
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• pp.1154-1157
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• 1996

The growth and electronic properties of ultrathin silver films deposited onto Pt(211) surface were studied using Auger electron spectroscopy (AES), low-energy electron diffraction (LEED), and x-ray photoelectron spectroscopy. The AES and LEED results indicate that the silver grows by a layer by layer growth followed by three dimensional islands growth. The XPS results show that the Ag 3d core-level binding energy of Ag overlayers on Pt(211) shifts toward lower binding energy relative to the bulk value at lower Ag coverage. This negative binding energy shift of the Ag 3d core level is explained by the reduced coordination number of the overlayer atoms and the resulting initial state band narrowing effect suggested by Wertheim and Citrin [Phys. Rev. Lett. 1978, 41, 1425].

• Journal of the Korean Magnetics Society
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• v.5 no.5
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• pp.451-455
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• 1995

The composition and thickness dependence and the ferromagnetic under- and overlayer effect on the magnetoresistance ratio and saturation field of the Co-Ag nano-granular films were investigated. The maximum magnetoresistance (23% at R.T.) in the as-deposited state was obtained in the $3000{\AA}$ $Co_{30} Ag_{70}$ bare alloy film. As the thickness of the alloy films decreased below $500{\AA}$, the MR ratio decreased because of the resistivity increase and the non-uniform film formation. We showed that the ferromagnetic over- and underlayer could reduce the saturation field of the nano-granular films via exchange coupling effect. The magnetoresistance and the saturation field of the $100{\AA}$ alloy film were 3.65 % and 2.85 kOe respectively and those of the under- and overlayered alloy films with $200{\AA}$ Fe were 3.3 % and 1.23 kOe respectively.

• Journal of Korean Vacuum Science & Technology
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• v.3 no.2
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• pp.112-115
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• 1999

The real ($\varepsilon$1) and imaginary ($\varepsilon$2) parts of the dielectric function of ZnS have been measured by spectroscopic ellipsometry (SE) in the 3.7-6.0 eV photon-energy range at room temperature. The obtained dielectric function spectra reveal distinct structures at energies E0/(E0+$\Delta$0) and E1 critical points. The spectrum after chemical treatment to remove surface oxide overlayer showed that these data seem to be the best representation of the dielectric function of ZnS, having the largest $\varepsilon$2 value at E1 peak region reported so far by SE. Dielectric-related optical constants of ZnS, such as the complex refractive indices (n+n=ik), absorption coefficient, and reflectance, are also presented.

• Restorative Dentistry and Endodontics
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• v.23 no.1
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• pp.68-93
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• 1998

The physical properties of polymer are greatly influenced by the extent to which a resin cures. The presence of un reacted monomer can, have a plasticizing effect on the polymer, thereby altering the physical and mechanical properties of dentin bonding agent (DBA). If the DBA does not polymerize sufficiently, it will leave a weak bonding layer and lead to lower bond strength. The purpose of this study was to evaluate the shear bond strengths(SBS) and the degree of conversion (DC) of 4 commercialy avilable dentin bonding systems which are composed of 2 multi-bottle systems [Scotchbond Multi-Purpose (SMP), AeliteBond(AB)] and 2 onebottle systems [SingleBond(SB), One-Step(OS)]. For shear bond strength measurement, labial surfaces of freshly extracted bovine incisors were ground with # 600 grit SiC paper to expose dentin. Four different groups of samples were formed, with 10 samples. being made for each of the 4 commercial DBA in each group according to the curing sequences of DBA and overlayer thickness of composites: Group I (standard cure and 1mm thick composites) : The DBA was light cured and the composites of 1mm thickness was applied ; Group II (standard cure and 2mm thick composites) : The DBA was light cured and the composites of 2mm thickness was applied; Group III (simultaneous cure and 1mm thick composites) : The DBA was not light-cured and simultaneously cured with composites of 1mm thickness; Group N (simultaneous cure and 2mm thick composites) : The DBA was. not light-cured and simultaneously cured with composites of 2mm thickness. The SBS was measured immediately after the composites was bonded to the bovine dentin using an Instron machine. The DC of the DBA was examined in a thin film under simulated conditions of the experimental groups according to the curing sequences and overlayer thickness of composites in the SBS test. using a Fourier transform Infrared(FTIR) spectrometer. The following results were obtained from SBS tests and DC measurements 1. In SBS tests, the multi-bottle DBA(SMP, AB) had a generally higher bond strength values than the one bottle DBA(SB, OS). In DC measurements, the one bottle DBA(SB, OS) had a significantly higher DC than the multi-bottle DBA(SMP, AB). 2. In all DBAs except OS, there was no significant difference between the bond strength of group I (standard cure and 1mm thick composites) and that of group III (simultaneous cure and 1mm thick composites). SMP, SB in Group I had a significantly higher DC than those in group III, but AB, OS in group I had a significantly lower DC than those in group III 3. All DBAs in Goup II (standard cure and 2mm thick composites) had significantly higher bond strength and DC than those in Group N (simultaneous cure and 2mm thick composites). 4. In all DBAs, there was no significantly different SBS and DC between Group I and Group II, but all DBAs in Group III had significantly higher SBS and DC than those in Group IV.

• Journal of Power System Engineering
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• v.5 no.3
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• pp.88-94
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• 2001

Stellite 12 alloy-powders were overlaid on 410 stainless steel valve seat using plasma transferred arc(PTA) process. Variation of the microstructure, hardness, wear and corrosion of overlaid deposit with current change was investigated. The deposit showed hypoeutectic microstructure, which was consisted of primary cobalt dendrite and networked $M_7C_3$ type eutectic carbides. As current increased, the amount of eutectic carbide decreased and its dendritic secondary arm spacing increased. Hardness of the deposit was decreased with increase of current. Stress relief heat treatment at $600^{\circ}C$ for two hours resulted in slight increase of hardness in the deposit and showed uniform hardness distribution in base metal without any hardened layer in HAZ. Specific wear decreased with increase of sliding distance. The deposit of high hardness with a lot of eutectic carbide showed relatively low specific wear. Initial corrosion current density of the deposit in 0.1N sulfuric acid was lower than those of 410 stainless steel, and showed a little variation with PTA current.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.03a
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• pp.99-99
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• 2003

The growth of GaN on Si is of great interest due to the several advantages : low cost, large size and high-quality wafer availability as well as its matured technology. The crystal quality of GaN is known to be much influenced by the surface pretreatment of Si substrate[1]. In this work, the properties of GaN overlayer grown on ion beam modified Si(111) have been investigated. Si(111) surface was treated RIB with 1KeV-N$_2$$\^$+/(at 1.9 ${\times}$ 10$\^$-5/) to dose ranging from 5${\times}$10$\^$15/ to 1${\times}$10$\^$17/ prior to film growth. GaN epilayers were grown at 1100$^{\circ}C$ for 1 hour after growing AlN buffer layers for 5∼30 minutes at 1100$^{\circ}C$ in Metal Organic Chemical Vapor Deposition (MOCVD). The properties of GaN epilayers were evaluated by X-Ray Diffraction(XRD), Raman spectroscopy, Photoluminescence(PL) and Hall measurement. The results showed that the ion modified treatment markedly affected to the structural, optical and electrical characteristic of GaN layers.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.11a
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• pp.165-165
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• 2003

The growth of GaN on Si is of great interest due to the several advantages low cost, large size and high-quality wafer availability as well as its matured technology. The crystal quality of GaN is known to be much influenced by the surface pretreatment of Si substrate [1]. In this work, the properties of GaN overlayer grown on ion implanted Si(111)and bare Si(111) have been investigated. Si(111) surface was treated ion implantation with 60KeV and dose 1${\times}$10$\^$16//$\textrm{cm}^2$ prior to film growth. GaN epilayers were grown at 1100$^{\circ}C$ for 1 hour after growing AlN buffer layers for 15-30 minutes at 1100$^{\circ}C$ with metal organic chemical vapor deposition (MOCVD). The properties of GaN epilayers were evaluated by X-Ray Diffraction (XRD), Scanning electron microscope (SEM) Photoluminescence (PL) at room temperature and Hall measurement The results showed that the GaN on ion implanted Si(111) markedly affected to the structural, optical and electrical characteristic of GaN layers.

• Journal of the Korean Vacuum Society
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• v.8 no.3B
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• pp.322-326
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• 1999

We have investigated the growing process of a silicon film on the $CeO_2/Si$ surface. The silicon was deposited by using electron beam deposition method. The $CeO_2$(111) film was grown on a (111)-oriented silicon substrate at $700^{\circ}C$ at oxygen [partial pressure of $5\times10^{-5}$ Torr. To investigate the condition of epitaxial growth of si films on the $CeO_2/Si$ substrate, we deposited Si at various temperature니 The overlayer silicon was characterized by using x-ray diffraction(XRD). double crystal x-ray diffraction (DCXRD), and transmission electron microscopy (TEM). At temperature higher than $690^{\circ}C$, $CeO_2$ layer was observed at the $CeO_2/Si$ interface, which was formed by chemical reaction with silicon and oxygen dissociated from $CeO_2$. When silicon was deposited on the $CeO_2/Si$ at $620^{\circ}C$, silicon grew epitaxially along the (111)-direction.

• Journal of the Korean Vacuum Society
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• v.8 no.3B
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• pp.269-275
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• 1999

The phase transition on the surface which several adsorbates (K, Mg, etc.) are deposited was observed by Low Energy Electron Diffraction (LEED) and Reflection High Energy Electron Diffraction (RGEED). We took the photoelectron spectra from the valence and core level at several oxygen exposure. For oxygen adsorption, the surface state in valence spectra diminished concurrently with S1, S2 peaks in core level spectra and surface periodicity turned to 3$\times$2 by post-annealing. These results suggest that the phase transition from 3$\times$2 to 3$\times$ on the Si(113) at initial stage is induced by a rearrangement of atoms on the substrate, not by the formation of overlayer.

• Bulletin of the Korean Chemical Society
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• v.31 no.8
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• pp.2247-2254
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• 2010

The surface structures of copper phthalocyanine (CuPc) thin films deposited on sulphur-passivated and plane perylene-3,4,9,10-tetracarboxylic dianhydride (PTCDA)-covered InAs(100) surfaces have been studied by low energy electron diffraction (LEED) and van der Waals (vdW) intermolecular interaction energy calculations. The annealing to $300^{\circ}C$ and $450^{\circ}C$ of $(NH_4)_2S_x$-treated InAs(100) substrates produces a ($1{\times}1$) and ($2{\times}1$) S-passivated surface respectively. The CuPc deposition onto the PTCDA-covered InAs(100) surface leads to a ring-like diffraction pattern, indicating that the 2D ordered overlayer exists and the structure is dominantly determined by the intermolecular interactions rather than substrate-molecule interactions. However, no ordered LEED patterns were observed for the CuPc on S-passivated InAs(100) surface. The intermolecular interaction energy calculations have been carried out to rationalise this structural difference. In the case of CuPc unit cells on PTCDA layer, the planar layered CuPc structure is more stable than the $\alpha$-herringbone structure, consistent with the experimental LEED results. For CuPc unit cells on a S-($1{\times}1$) layer, however, the $\alpha$-herringbone structure is more stable than the planar layered structure, consistent with the absence of diffraction pattern. The results show that the lattice structure during the initial stages of thin film growth is influenced strongly by the intermolecular interactions at the interface.