• 제목/요약/키워드: Output saturation

검색결과 202건 처리시간 0.023초

입력에 포화기를 가진 제어시스템의 성능향상 (Performance Enhancement of Control Systems with Saturating Actuators)

  • 박종구;최종호
    • 대한전기학회논문지
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    • 제38권5호
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    • pp.380-387
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    • 1989
  • The Conventional-Anti-reset-Windup (CAW) structure gives pretty good performance among the conventional strategies that prevent systems from saturation, but there is no systematic way of designing the control systems. Also, it frequently destabilizes the systems. Moreover, the CAW structure cannot be applied when the output of the saturating actuator cannot be measured. Therefore the CAW structure is modified to accommodate this situation. An effective designing method is proposed to give better performance of the control system. The stability of the control system is also considered. The usefulness of the proposed method is shown by applying this method to a few examples.

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진행파형 반도체 광증폭기에서 이득특성의 활성층 구조 의존성 (Structural dependence of an optical gain in a traveling-wave semiconductor optical amplifier)

  • 장세윤;심종인;이정석;김호인;윤인국;김승우;신현철;어영선
    • 한국광학회:학술대회논문집
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    • 한국광학회 2003년도 하계학술발표회
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    • pp.222-223
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    • 2003
  • The optical gain characteristics of 1550nm traveling-wave semiconductor optical amplifiers are analyzed experimentally and theoretically. The result shows that there is an optimum active layer thickness for high saturation output power.

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A Review of SiC Static Induction Transistor (SIT) Development for High-Frequency Power Amplifiers

  • Sung, Y.M.;Casady, J.B.;Dufrene, J.B.
    • KIEE International Transactions on Electrophysics and Applications
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    • 제11C권4호
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    • pp.99-106
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    • 2001
  • An overview of Silicon Carbide (SiC) Static Induction Transistor (SIT) development is presented. Basic conduction mechanisms are introduced and discussed, including ohmic, exponential, and space charge limited conduction (SCLC) mechanisms. Additionally, the impact of velocity saturation and temperature effects on SCLC are reviewed. The small-signal model, breakdown voltage, power density, and different gate structures are also discussed, before a final review of published SiC SIT results. Published S-band (3-4 GHz) results include 9.5 dB of gain and output power of 120 W, and L-band (1.3 GHz) results include 400 W output power, 7.7 dB of gain, and power density of 16.7 W/cm.

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Analysis and Comparison of a Permanent-Magnet DC Motor with a Field-Winding DC Motor

  • Kiyoumarsi, Arash
    • Journal of Electrical Engineering and Technology
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    • 제4권3호
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    • pp.370-376
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    • 2009
  • The influence of magnetic saturation on electromagnetic field distribution in both a permanent-magnet direct-current (PMDC) motor and a field-winding (wound-field) direct-current (FWDC) motor, with the same output mechanical power, has been studied. In this paper, an approximate analytical method and time-stepping Finite Element Method (FEM) are used for prediction of Back-EMF and electromagnetic torque. No-load and rotor-lucked conditions, according to experimental measurements, and the FEM and analytical method studies of the motors have been considered. A sensitivity analysis has also been successfully accomplished on the major design parameters that affect motor performance. At last, these two DC motors are compared, in spite of their differences, on the basis of measured output characteristics.

열전변환 장치의 특성 분석에 대한 연구 (Performance Analysis of A Variable-Spacing Cesium Thermionic Energy Converter)

  • Lee, Deuk-Yong
    • 대한전기학회논문지
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    • 제41권9호
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    • pp.1085-1094
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    • 1992
  • A variable-spacing cesium thermionic energy conversion test station is designed and fabricated for the study of power generation. The diode is in the form of a guard-ringed plane-parallel geometry in which a polycrystalline rhenium emitter of 2 cmS02T area faces a radiation-cooled polycrystalline rhenium collector of 1.9 cmS02T area. The emission of plasma from heated refractory electrode metal is the driving reaction in the direct conversion of heat to electricity by thermionic energy conversion. The plasma is produced from electrons and positive ions formed simultaneously by thermionic emission and surface ionization of cesium atoms incident on the hot emitter from the cesium vapor in the diode. And high plasma density causes plasma multiplication within the gap due to volume ionization that results in high power output. The variation of the saturation current of a Knudsen converter is investigated at an emitter-collector gap of 0.1 mm and an emitter temperatures. A maximum power output of 13.47 watta/cmS02T is observed at a collector temperature of 963 K and a cesium reservoir temperature of 603 K.

The Electrical Properties of Single-silicon TFT Structure with Symmetric Dual-Gate for kink effect suppression

  • 이덕진;강이구
    • 한국컴퓨터산업학회논문지
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    • 제6권5호
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    • pp.783-790
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    • 2005
  • In this paper, we have simulated a Symmetric Dual-gate Single-Si TFT which has three split floating n+ zones. This structure reduces the kink-effect drastically and improves the on-current. Due to the separated floating n+ zones, the transistor channel region is split into four zones with different lengths defined by a floating n+ region, This structure allows an effective reduction of the kink-effect depending on the length of two sub-channels. The on-current of the proposed dual-gate structure is 0.9mA while that of the conventional dual-gate structure is 0.5mA at a 12V drain voltage and a 7V gate voltage. This result shows a 80% enhancement in on-current. Moreover we observed the reduction of electric field in the channel region compared to conventional single-gate TFT and the reduction of the output conductance in the saturation region. In addition, we also confirmed the reduction of hole concentration in the channel region so that the kink-effect reduces effectively.

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고출력 응용을 위한 영구자석 매입형 동기 릴럭턴스 전동기의 특성해석 (Characteristic Analysis of Permanent Magnet Assisted Synchronous Reluctance Motor for High Power Application)

  • 장영진;김기복;이중호;김상길;신흥교
    • 대한전기학회논문지:전기기기및에너지변환시스템부문B
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    • 제53권10호
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    • pp.585-596
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    • 2004
  • In this paper, finite element analysis for a PMASynRM is presented and the characteristic analysis of inductance and torque is performed under the effect of saturation. The focus of this paper is characteristic analysis of d and q-axis inductances and torque according to magnetizing quantity of interior permanent magnet for PMASynRM. The d and q-axis current component ratios, load angles of a PMASynRM are investigated quantitatively on the basis of the proposed analysis method and the experimental test. Comparisons are given with output characteristic curves of normal SynRM and those according to the load in PMASynRM, respectively And it is confirmed that the proposed model results in high output power performance.

마이크로머시닝 기술을 이용하여 제작한 포도당 센서에 관한 연구 (A study on a Glucose Sensor Fabricated by Micromachining)

  • 최석민;노일호;양성준;김창교;유홍진;박효덕
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2001년도 하계학술대회 논문집
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    • pp.451-454
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    • 2001
  • In this study, a micro-glucose sensor was fabricated by micromachining technology and its sensing characteristics were investigated. The 7740 pyrex glass was used as the bottom substrate and anisotropically etched silicon wafer was used as the top substrate. The size of the fabricated microchip is 1.58${\times}$1.58mm$^2$. It is shown that output current exhibits a linear change according to glucose concentration (100 mM ∼ 300 mM). It is also shown that the response time for glucose was within 240 sec. It was followed by a saturation trend within 50 sec. The g1ucose sensor with Fc$\^$+/ exhibits relatively higher sensitivity than that without Fc$\sub$+/ for output current.

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나노튜브 직경과 산화막 두께에 따른 탄소나노튜브 전계 효과 트랜지스터의 출력 특성 (Output Characteristics of Carbon-nanotube Field-effect Transistor Dependent on Nanotube Diameter and Oxide Thickness)

  • 박종면;홍신남
    • 한국전기전자재료학회논문지
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    • 제26권2호
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    • pp.87-91
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    • 2013
  • Carbon-nanotube field-effect transistors (CNFETs) have drawn wide attention as one of the potential substitutes for metal-oxide-semiconductor field-effect transistors (MOSFETs) in the sub-10-nm era. Output characteristics of coaxially gated CNFETs were simulated using FETToy simulator to reveal the dependence of drain current on the nanotube diameter and gate oxide thickness. Nanotube diameter and gate oxide thickness employed in the simulation were 1.5, 3, and 6 nm. Simulation results show that drain current becomes large as the diameter of nanotube increases or insulator thickness decreases, and nanotube diameter affects the drain current more than the insulator thickness. An equation relating drain saturation current with nanotube diameter and insulator thickness is also proposed.

Neural Network Modeling of Hydrocarbon Recovery at Petroleum Contaminated Sites

  • Li, J.B.;Huang, G.H.;Huang, Y.F.;Chakma, A.;Zeng, G.M.
    • 대한전자공학회:학술대회논문집
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    • 대한전자공학회 2002년도 ITC-CSCC -2
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    • pp.786-789
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    • 2002
  • A recurrent artificial neural network (ANN) model is developed to simulate hydrocarbon recovery process at petroleum-contaminated site. The groundwater extraction rate, vacuum pressure, and saturation hydraulic conductivity are selected as the input variables, while the cumulative hydrocarbon recovery volume is considered as the output variable. The experimental data fer establishing the ANN model are from implementation of a multiphase flow model for dual phase remediation process under different input variable conditions. The complex nonlinear and dynamic relationship between input and output data sets are then identified through the developed ANN model. Reasonable agreements between modeling results and experimental data are observed, which reveals high effectiveness and efficiency of the neural network approach in modeling complex hydrocarbon recovery behavior.

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