• The Transactions of the Korean Institute of Electrical Engineers A
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• v.49 no.5
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• pp.226-232
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• 2000

This paper presents application results of the augmented matrix eigen-sensitivity theories to TCSC siting problem for damping the inter-area low frequency oscillation in the large KEPCO system. First and second-order eigen-sensitivities of the inter-area low frequency oscillation in the large KEPCO system. First and second-order eigen-sensitivities of the inter-area mode are computed fro changes in susceptance of the transmission lines. The lines having high sensitivity are chosen as the initial candidates for installing TCSC. Then for each of the chosen candidates, Bodeplot of the transfer function with line susceptance as the input and the bus voltage at one side of the line as the output is computed. Using the Bode plots, the lines having any zeros near the inter-area mode are screened out since design of TCSC controller is very difficult in such a case. The $H_{\infty}$ TCSC controller installed at any finally chosen candidate is found to be effective in damping the inter-area oscillation, and the proposed TCSC siting algorithm is proved to be valid. Design of $H_{\infty}$ controller is described in Part IIof this paper.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.19 no.8
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• pp.854-861
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• 2008

We have described a high power hybrid envelope elimination and restoration(H-EER) transmitter for IEEE 802.16e Mobile World Interoperability for Microwave Access(WiMAX) using an efficiency optimized power amplifier(PA). The PA has been designed to have maximum PAE at the important power generation $V_{ds}$, region using Nitronex 100-W PEP GaN HEMT. For the high power application, H-EER transmitter should be considered the regenerative oscillation problem due to the PA's bias fluctuation effect and bias modulator stability issue. Therefore, the bias modulator for H-EER transmitter has been designed to suppress the regenerative oscillation. For the interlock experiment, the bias modulator has been built with the efficiency of 72% and peak output voltage of 30 V for the envelope signal with a PAPR of 8.5 dB. The H-EER transmitter for WiMAX application has been achieved a high PAE characteristic, 38.8 % at an output power of 41.25 dBm. By using digital predistortion(DPD) technique, the Relative Constellation Error (RCE) has been satisfied the specification of -34.5 dB. This is the first work at 2.655 GHz high power H-EER transmitter for WiMAX application.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.10 no.10
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• pp.1737-1743
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• 2006

OCR(On channel repeater) provides the high frequency reuse efficiency for allocating frequency bands to repeaters because the frequency of input and output signals of OCRs is the same. However the oscillation probability of OCRs is high due to the same input and output frequency. In order to prevent a repeater from oscillating, we must keep the antenna isolation higher than the gain of the repeater with a some margin. In this paper we simulated the effects of the amplitude, phase and time delay of feedback signals (m the characteristics of non-regeneration OCR. Simulation results show that the highest probability of oscillation is occurred when the gain of a repeater is the same value of the isolation. From the simulation results, we know that the phase of feedback signals can be adjusted to reduce the possibility of oscillation if a non-regeneration repeater has a narrow operation bandwidth or a signal bandwidth is narrow. As the time delay increases, the probability of oscillation and the fluctuation of gain over a certain frequency band increase also. The effects of the amplitude and phase of feedback signals on S/N of 8-VSB signal for generation and non-generation repeater were tested. The measured results show that the set-top can receive 8-VSB signal when the received signal power is $17{\sim}18dB$ higher than the noise power. When the isolation is almost same as the gain of the repeater, then the set-top can not receive 8-VSB signals due to the oscillation of the repeater. And the phase of feedback signals affects S/N at the output of the repeater when the isolation is $11.75{\sim}13.75dB$ larger than the gain of the repeater. In this case the set-top can not receive 8-VSB signal of at $48^{\circ}\;and\;347^{\circ}$ of the phase of feedback signals. However the phase of feedback signals can not affect the S/N of 8-VSB signals of the generation repeater because of the demodulation and modulation process of the generation repenter. The set-top can not receive 8-VSB signals when the amplitude of feedback signals is $12.6{\sim}13.6dB$ larger than the wanted signal power at the input port of the repeater. It's because that the amplitude of feedback signals saturates the front end of the repeater.

• Journal of electromagnetic engineering and science
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• v.5 no.1
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• pp.8-13
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• 2005

The InGaP/GaAs hetero-junction bipolar transistor(HBT) monolithic voltage-controlled dielectric resonator oscillator(VCDRO) is first demonstrated for a Ku-band low noise block down-converter(LNB) system. The on-chip voltage control oscillator core employing base-collector(B-C) junction diodes is proposed for simpler frequency tuning and easy fabrication instead of the general off-chip varactor diodes. The fabricated VCDRO achieves a high output power of 6.45 to 5.31 dBm and a wide frequency tuning range of ]65 MHz( 1.53 $\%$) with a low phase noise of below -95dBc/Hz at 100 kHz offset and -115 dBc/Hz at ] MHz offset. A]so, the InGaP/GaAs HBT monolithic DRO with the same topology as the proposed VCDRO is fabricated to verify that the intrinsic low l/f noise of the HBT and the high Q of the DR contribute to the low phase noise performance. The fabricated DRO exhibits an output power of 1.33 dBm, and an extremely low phase noise of -109 dBc/Hz at 100 kHz and -131 dBc/Hz at ] MHz offset from the 10.75 GHz oscillation frequency.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.12 no.3
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• pp.114-123
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• 1998

The multi-resonant converter(MRC) minimizes a parasitic oscillation by using the resonant tank circuit absorbed parasitic reactances existing in a converter circuit. So it si possible that the converter operated at a high frequency has a high efficiency because the losses are reduced. Such a MHz high frequency applications provide a high power density [W/inch3] of the converter. But the resonant voltage stress across a switch of the resonant tank circuit is 4~5 times a input voltage. This h호 voltage stress increases the conduction loss because of on-resistance of a MOSFET with higher rating. Thus, in this paper we proposed the alternated multi-resonant converter (AT MRC) differ from the clamp mode multi-resonant converter and applicated it to the forward MRC. The AT forward MRC can reduce the voltage stress to 2~3 times a input voltage by using two series input capacitor. The control circuit is simple because tow resonant switches are driven directly by the output pulse of the voltage controled oscillator. This circuit type is verified through the experimental converter with 48V input voltage, 5V/50W output voltage/power and PSpice simulation. the measured maximum voltage stress is 170V of 2.9 times the input voltage and the maximum efficiency of 81.66% is measured.

• Proceedings of the IEEK Conference
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• 2008.06a
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• pp.565-566
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• 2008

The high efficiency power management IC(PMIC) for Moblie application is proposed in this paper. PMIC is controlled with PWM control method in order to have high power efficiency at high current level. The saw-tooth generator is made to have 1.2 MHz oscillation frequency and full range of output swing from ground to supply voltage(VDD:3.3V). The comparator is designed with two stage OP amplifier. And the error amplifier has 70dB DC gain and $64^{\circ}$ phase margin. DC-DC converter, based on Voltage-mode PWM control circuits, achieved the high efficiency near 95% at 100mA output current. DC-DC converter is designed with LDO in stand-by mode which fewer than 1mA for high efficiency.

• Current Optics and Photonics
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• v.5 no.6
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• pp.721-729
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• 2021

We demonstrate a Pr³⁺:YLF 639.7-nm laser with single-frequency output based on the Q-switched pre-lase technology, pumped by a fiber-coupled GaN blue laser diode. The pre-lase technology is realized by the step-type loss of the acousto-optical Q-switched device. The conclusions of the theoretical research are verified experimentally. The mode-suppression ratio was 44 dB at the single-frequency laser output. Detection by interferometer verified the realization of the stable single-frequency laser. In addition, the emission spectrum had a linewidth of 139.9 MHz, measured by Fabry-Perot interferometer. The single-frequency laser's single-peak power was over 19.7 W with 98.8-ns pulse duration, obtained under an absorption power of 1.74 W.

• Journal of Power Electronics
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• v.12 no.4
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• pp.677-688
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• 2012

The vibratory conveyors with electromagnetic drive are used for performing gravimetric flow of granular materials in processing industry. By realizing free vibrations of variable intensity and frequency over a wide range through application of the electromagnetic actuator, suitable power converter, and the corresponding controller, continuous conveyance of granular materials have been provided for various operating conditions. Standard power output stages intended for control of vibratory conveyance using thyristors and triacs. Phase angle control can only accomplish tuning of amplitude oscillations, but oscillation frequency cannot be adjusted by these converters. Application of current controlled transistor converters enables accomplishing the amplitude and/or frequency control. Their use implies the excitation of a vibratory conveyor independent of the supply network frequency. In addition, the frequency control ensures operation in the region of mechanical resonance. Operation in this region is favourable from the energy point of view, since it requires minimal energy consumption. The paper presents a possible solution and advantages of the amplitude-frequency control of vibratory conveyors by means of a current controlled power converter.

• ETRI Journal
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• v.27 no.6
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• pp.685-690
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• 2005

DC and RF characteristics of $0.15{\mu}m$ GaAs power metamorphic high electron mobility transistors (MHEMT) have been investigated. The $0.15{\mu}m{\times}100{\mu}m$ MHEMT device shows a drain saturation current of 480 mA/mm, an extrinsic transconductance of 830 mS/mm, and a threshold voltage of -0.65 V. Uniformities of the threshold voltage and the maximum extrinsic transconductance across a 4-inch wafer were 8.3% and 5.1%, respectively. The obtained cut-off frequency and maximum frequency of oscillation are 141 GHz and 243 GHz, respectively. The $8{\times}50{\mu}m$ MHEMT device shows 33.2% power-added efficiency, an 18.1 dB power gain, and a 28.2 mW output power. A very low minimum noise figure of 0.79 dB and an associated gain of 10.56 dB at 26 GHz are obtained for the power MHEMT with an indium content of 53% in the InGaAs channel. This excellent noise characteristic is attributed to the drastic reduction of gate resistance by the T-shaped gate with a wide head and improved device performance. This power MHEMT technology can be used toward 77 GHz band applications.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.29 no.2
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• pp.99-108
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• 2018

This paper presents a design study of a solid state power oscillator to replace the conventional magnetron. The operational conditions of a single-stage 300 W LDMOS power amplifier were fully characterized. The power module consisted of two amplifiers connected in parallel. A delay-line feedback loop was designed for self-oscillation. A phase shifter was inserted in the delay-line feedback loop for adjusting the round-trip phase. Experiments performed using the power oscillator showed an output power of 800 W and a DC-RF conversion efficiency of 58 % at 2.327 GHz. The measured results were in good agreement with those predicted by numerical simulations.