• Journal of the Korean Crystal Growth and Crystal Technology
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• v.14 no.4
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• pp.151-154
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• 2004

Issues of ferroelectric high-density memories (>64 Mb) indispensable for upcoming ubiquitous era have been on the cell integration less than $0.1\;\mu\textrm{m}^2$ and reliabilities. Thus nanoscale control of microstructures of ferroelectric films with large switching polarization has been one of the issues to obtain the uniform electrical properties for realization of high-density memories. In this study the grain orientations and distributions of BT-based films by spin-on coatings were examined by FEG-SEM/EBSD. Ferroelectric domain characteristics by PFM were also performed to study the dependence of reliabilities on the grain orientations and distributions. It is believed that understandings of the nucleation and growth mechanisms of the a- or b-axis oriented films during the thermal processes such as RTA and furnace annealing affecting on grain orientation and uniformity could be possible based on our experimental results.

• Proceedings of the Korean Vacuum Society Conference
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• 1994.06a
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• pp.50-51
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• 1994

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.10 no.2
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• pp.152-158
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• 2000

The crystallographic grain orientation of {{{{ { ZrB}_{2 } }}}}-ZrC composite sintered by pressureless a sintering(PLS) and spark plasma sintering (SPS) was analysed by the SEM-EBSP technique. In the case of PLS, (160) plane of {{{{ { ZrB}_{2 } }}}} was oriented to ND direction, (101) and (111) plane of ZrC were oriented to ND direction. In the case of SPS, (0001) plane of {{{{ { ZrB}_{2 } }}}} was strongly oriented to ND direction. Only (001) plane of ZrC was oriented to ND direction. The PLS specimen had weakly oriented grain structure and interface between {{{{ { ZrB}_{2 } }}}} and ZrC was found to be more stable than that of SPS but the SPS specimen had a preferentially oriented grain structure.

• Bulletin of the Korean Chemical Society
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• v.31 no.1
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• pp.196-198
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• 2010

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.3 no.2
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• pp.167-175
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• 1993

Lithium-Carbon Intercalation Compounds(Li-CICs) have been synthesized from various carbon ma-terials by use of the modified stainless steel two-bulbs methods. These compounds had various colours by structural character of starting materials. The synthesized Li-CICs were identified to stage formation process by X-ray diffraction data. At these results, well-oriented natural graphite and graphite fiber are formed lower stages(Stage 1, Stage 2), but poor-oriented carbon fiber and petroleum cokes are also formed higher stages(Stage 3, Stage 4, Stage 5). And when we compared with measured d value and calculated d value, these values agreed with each other. But poor-oriented carbon materials are some difference from them. The stage stability and energy stage of Li-CICs were obtained by UV/VIS Spectrophotometric data. X-ray diffraction and UV/VIS Spectrophotometric data suggested that well-oriented carbon materials has distingushible curve between energy and reflectance. In these results, we know that many charge carriers between carbon layers are related to concentration of intercalants. And then, this paper also provides information on high efficiency energy storing materials at intercalation process of Li-CICs.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.13 no.5
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• pp.211-216
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• 2003

The $Cu[SO_3(CH_2)_4SO_3$］ㆍ$4H_2O$ compound was synthesized. The three-dimensional structure of $Cu[SO_3(CH_2)_4SO_3$］ㆍ$4H_2O$ compound was determined. The copper atom is bridged by 4 oxygen atoms of 4 water molecules and 2 oxygen atoms of butanedisulfonate. The butyl chain in the plane of four copper atoms is oriented parallel and perpendicular to the one of plane axis, alternatively. Magnetic data indicate that this compound behaves a typical paramagnetic.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.1 no.2
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• pp.94-103
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• 1991

ZnO-$P_2O_5$ system glasses containing 45 to 60 mol% ZnO have been melted at$1200^{\circ}C$and crystallized through controlled heat treatment. The properties of the base glass and crystallized glass were examined with XRD. FTIR. density. thermal expansion, electric conductivity, hardness. The principal crystalline phase was identified as zinc metaphosphate [$Zn(PO_3)_2$ in crystallized glasses containing 45-55mol% ZnO and zinc pyrophosphate ($Zn_2P_2O_7$) in the sample of 60mol% ZnO with X - ray diffraction analysis. Thermal expansion coefficient and DC electrical conductivity were varied with direction of oriented crystalline in the samples containing 50-60mol% ZnO. This suggests the existance of the oriented crystalline.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.9 no.3
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• pp.303-308
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• 1999

As a semiconductor material for electronic devices operated under extreme environmental conditions, silicon carbides(SiCs) have been intensively studied because of their excellent electrical, thermal and other physical properties. The growth characteristics of single-crystalline 4H-SiC homoepitaxial layers grown by a thermal chemical vapor deposition (CVD) were investigated. Especially, the successful growth condition of 4H-SiC homoepitaxial layers using a SiC-uncoated atmospheric pressure chamber and carried out using off-oriented substrates prepared by a modified Lely method. In order to investigate the crystallinity of grown epilayers, Nomarski optical microscopy, Raman spectroscopy, photoluninescence(PL), scanning electron microscopy(SEM) and other techniques were utilized. The best quality of 4H-SiC homoepitaxial layers was observed in conditions of growth temperature $1500^{\circ}C$ and C/Si flow ratio 2.0 of $C_{3}H_{8}\;0.2\;sccm\;&\;SiH_{4}\;0.3\;sccm$. The growth rate of epilayers was about $1.0\mu\textrm{m}/h$ in the above growth condition.

• Particle and aerosol research
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• v.6 no.1
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• pp.21-27
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• 2010

New process consisting of electrospray and epitaxial crystal growth processes was applied to the preparation of c-plane oriented barium ferrite ($BaFe_{12}O_{19}$) thin film for high density magnetic recording media. Sodium citrate aided process was proper to preparation of amorphous $BaFe_{12}O_{19}$ nanoparticles with geometric mean diameter of 3 nm and geometric standard deviation of 1.1. The electrospray was applicable to the prepare of amorphous $BaFe_{12}O_{19}$ thin film on a substrate, and the film thickness could be controlled by adjusting the electrospray deposition time. The c-plane oriented $BaFe_{12}O_{19}$ thin film was successfully prepared by 3 step annealing process of the $BaFe_{12}O_{19}$ amorphous film on a sapphire($Al_2O_3$) substrate; annealing at $350^{\circ}C$ for 30 min, annealing at $500^{\circ}C$ for 30 min, and annealing at $700^{\circ}C$ for 60 min.

• Proceedings of the Korea Association of Crystal Growth Conference
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• 1997.06a
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• pp.247-251
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• 1997

GaN films were grown on three differently oriented sapphire substates; (0001), (11-20), and (1-20). GaN films on the (0001) and (11-20) substates have a haxagonal structure and their growth rate was 0.6 $\mu\textrm{m}$/hr in both case. The film on the (1-102) substrate was too thin to identify its crystalline state. Growth rate was about the half of the others. Substrate orientation is one of the factor determining growth rate. The adhesion between GaN film and alumina substrate seems to be very good judging from the fractography.