• Title/Summary/Keyword: Orientation Dependence

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Korean Retailers' Dependence Level: The Impact of Power Sources, Satisfaction, Conflict, and Long-Term Orientation

  • Yu, Jong-Pil;Pysarchik, Dawn Thorndike;Kim, Yu-Kyung
    • Journal of Global Scholars of Marketing Science
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    • v.18 no.1
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    • pp.81-114
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    • 2008
  • The purpose of this study was to analyze how economic factors (economic satisfaction, economic conflict) and non-economic factors (non-economic satisfaction, non-economic conflict) differentially influence Korean retailers' long-term orientation with manufacturers, and how they are influenced by manufacturers' power sources under different levels of retailer dependence. After Korean retailers were divided into high and low dependence groups, path differences between the two groups were compared. The results suggested that manufacturers' coercive and non-coercive power sources do not differentially influence high and low dependence retailers' economic and non-economic satisfaction, and economic and non-economic conflict. However, the economic satisfaction of low dependence retailers more strongly affects their long-term orientation than that of high dependence retailers. Also, the economic conflict of highly dependent retailers more strongly affects their long-term orientation as compared to low dependence retailers. Finally, the impact of non-economic conflict negatively influences a long-term orientation for both retailer groups.

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A Study on the Orientation Dependence of Plastic Deformation in NiAl Single Crystals by FEA (FEA를 이용한 NiAl 단결정 소성 변형의 결정 방향 의존에 관한 연구)

  • Yang, Chul-Ho
    • Proceedings of the KSME Conference
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    • 2004.11a
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    • pp.268-273
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    • 2004
  • Deformation of single crystals was studied using finite element analysis to investigate the orientation dependence of plastic deformation observed in NiAl single crystals. Investigation of mechanical properties of single crystals is closely related with the understanding of deformation processes in single crystals. Orientation dependence of material behavior in NiAl single crystals was studied by rotating loading directions from 'hard' orientation. The maximum nominal compressed stress in NiAl single crystals was ranged in a quite wide scope depending on the misalignment from 'hard' orientation. As the compressed axis set closer to 'hard' orientation, the maximum nominal compressed stress rapidly increased and made <100> slips difficult to activate. Therefore, non-<100> slips will be activated instead of <100> slips for 'hard' orientation.

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The effects of Korean, American, and Japanese manufacturing firm's dependence on influence strategies and long-term orientation (한국.미국.일본 제조업체의 의존성이 영향전략과 장기지향성에 미치는 효과)

  • Kim, Jong-Young;Bang, Ho-Yeol
    • International Commerce and Information Review
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    • v.12 no.2
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    • pp.183-211
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    • 2010
  • This paper empirically investigated whether the dependence of manufacturing firms effects the influence strategies and long-term orientation based on the data from manufacturing firms in Korea. U.S., and Japan. Also, the proposed model was proven by the structural equation model with the data gathered from 105 manufacturing firms in Korea, 103 in U.S., and 83 in Japan. The findings were as follows. First, the dependence of all of manufacturing firms, regardless of country, positively affected the coercive influence strategies of distributors, whereas the dependence positively affected the noncoercive influence strategies in U.S. and Japan but in the case of Korea, it showed the reverse direction and were not statistically significant. Second, the dependence of Korean manufacturing firms positively affected the long-term orientation but American manufacturing firms showed the reverse direction and it was not statistically significant. In the case of Japanese manufacturing firms, the direction predicted in the paper was shown but was not statistically significant. Third, the coercive influence strategies positively affected the long-term orientation in Korea but it showed the negative relationship in Japan. Fourth, the noncoercive influence strategies positively affected the long-term orientation in all countries. Lastly, a few implications, limitations and future study issues were discussed.

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A Study of Deformation and Orientation Dependent Behavior in Single Crystals

  • Yang Chulho
    • Journal of Mechanical Science and Technology
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    • v.19 no.3
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    • pp.802-810
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    • 2005
  • Deformations of single crystals were studied using finite element analysis to investigate the localized modes and the orientation dependence of plastic deformation observed in single crystals. Investigation of mechanical properties of single crystals is closely related with the understanding of deformation processes in single crystals. Localized bands such as shear and kink were studied and the material and geometric characteristics that influence the formation of such localized bands were investigated. Orientation dependence of material behavior in NiAl single crystals was studied by rotating slip directions from 'hard' orientation. The maximum nominal compressed stress in NiAl single crystals was widely ranged depending on the misalignment from 'hard' orientation. As the compression axis was set closer to 'hard' orientation, the maximum nominal compressed stress was rapidly increased and made <100> slips difficult to activate. Therefore, non-<100> slips will be activated instead of <100> slips for 'hard' orientation.

Changes in the Orientation and Frequency Dependence of Target Strength due to Morphological Differences in the Fish Swim Bladder (어류 부레의 형태학적 차이에 따른 음향산란강도의 자세 및 주파수 의존성의 변화)

  • Lee, Dae-Jae
    • Korean Journal of Fisheries and Aquatic Sciences
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    • v.48 no.2
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    • pp.233-243
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    • 2015
  • Controlled broadband acoustic scattering laboratory experiments were conducted using a linear chirp signal (95-220 kHz), and x-ray images of live and model fish with an artificial swim bladder were analyzed to investigate the changes in orientation and frequency dependence of target strength (TS) due to morphological differences in fish swim bladders. The broadband echoes from live and model fish were measured over an orientation angle range of ${\pm}45^{\circ}$ in the dorsal plane and in approximately $1^{\circ}$ increments. The location of nulls in the simulated echo response of the SINC [sinc function] model was overlaid on the TS map, showing the orientation and frequency dependence of fish TS, and they matched very well. It was possible to infer the equivalent fish scattering size (or swim bladder) using the null spacing in the experimentally obtained broadband TS map. Good agreement was observed for inferring the equivalent scattering size between the SINC model and the broadband echoes measured for the three fish species (black scraper Thamnaconus modestus; goldeye rockfish Sebastes thompsoni; and whitesaddled reef fish Chromis notatus). Some results of this inference are discussed.

Orientation dependence of GM-type pulse tube refrigerator (GM형 맥동관 냉동기의 저온부 경사도에 따른 냉각 성능 특성 연구)

  • Ko, Jun-Seok;Kim, Hyo-Bong;Park, Seong-Je;Hong, Yong-Ju;Yeom, Han-Kil;Lee, Chung-Soo;Kang, In-Su;Koh, Deuk-Yong
    • Progress in Superconductivity and Cryogenics
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    • v.14 no.3
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    • pp.48-52
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    • 2012
  • This paper describes experimental study on the orientation dependence of GM-type pulse tube refrigerator with helium and neon as working gas. A pulse tube refrigerator generates refrigeration work with gas expansion by gas displacer in the pulse tube. The pulse tube is only filled with working gas and there exists secondary flow due to large temperature difference between cold-end and warm-end. The stability of secondary flow is affected by orientation of cold-head and thus cooling performance is deteriorated by gas mixing due to secondary flow. In this study, a single stage GM-type pulse tube with orifice valve as a phase control device is fabricated and tested. The fabricated pulse tube refrigerator is tested with two different working gases of helium and neon. First, optimal valve opening and operating frequency are determined with experimental results of no-load test. And then, the variation of no-load temperature as orientation angle of cold-head is measured for two different working gases. Effect of orientation dependence of cold-head as working gas is discussed with experimental results.

Crystallographic Orientation Dependence Of Electrical Properties of Carbon-doped GaAs Grown by Low Pressure Metalorganic Chemical Vapor Deposition Using CBr4 (저압 MOCVD로 CBr4 가스를 사용하여 탄소 도핑된 GaAs 에피층의 결정학적 방향에 따른 전기적 성질의 의존성)

  • 손창식
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.15 no.3
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    • pp.214-219
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    • 2002
  • In order to elucidate the crystallographic orientation dependence of electrical properties of carbon (C)-doped GaAs epilayers, C incorporation into GaAs epilayers on high-index GaAs substrates with various crystallographic orientations from (100) to (111)A has been performed by a low pressure metalorganic chemical vapor deposition using C tetrabromide ($CBt_4$) as a C source. The hole concentration of C-doped GaAs epilayers rapidly decreases with a hump at (311)A with increasing the offset angle. Although the growth temperature and the V/III ratio are varied, the crystallographic orientation dependence of hole concentration show a same trend. The above behaviors indicate that the bonding strength of As sites on a glowing surface plays an important role in the C incorporation into the high-index GaAs substrates.

Crystallographic Orientation Dependence of Sputtering Rate in Sendust Targets

  • Kim, Myong-Ryeong;Hum Seo
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1995.05a
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    • pp.167-171
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    • 1995
  • The orientation dependence of sputtering rate in the sendust polysrystalline targets was studied, It was fount from the present work that the erosion process is not uniform from one grain to another even within a target because of its polysrystalline nature showing many different orientation of grains. The grains oriented to promote efficient erosion were characterized by the close-packed planes which have large interplanar spacing and strong binding energy, The characteristic line patterns appeared on as-sputter target surface are discussed in terms of symmetry of crystllographic planes.

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Sapphire orientation dependence of the crystallization of ZnO thin films (사파이어 기판의 방향에 따른 ZnO 박막의 결정화 거동)

  • 조태식
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2001.07a
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    • pp.1036-1038
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    • 2001
  • The sapphire orientation dependence of the crystallization of ZnO thin films has been studied using real-time synchrotron x-ray scattering. The amorphous ZnO thin films with a 2400-${\AA}$-thick were grown on sapphire(110) and sapphire(001) substrates by radio frequency magnetron sputtering at room temperature. The amorphous ZnO films were crystallization into epitaxial ZnO(002) grains both on the sapphire(110) and on the sapphire(001) substrates. The epitaxial quality, such as mosaic distribution and crystal domain size, of the ZnO grains on the sapphire(110) is high, similar to that of the ZnO grains on the sapphire(001). With increasing the annealing temperature to 600$^{\circ}C$, the mosaic distribution and the crystal domain size of ZnO(002) grains in the film normal direction was improved and decreased, respectively.

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Dependence of Turn-On Voltage and Surface State Density on the Silicon Crystallographic Orientation (실리콘 결정의 방향성에 따른 Turn-On 전사과 추면대융단파의 상대성에 관한 연구)

  • 성영권;성만영;조철제;고기만;이병득
    • The Transactions of the Korean Institute of Electrical Engineers
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    • v.33 no.4
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    • pp.157-163
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    • 1984
  • The object of this paper is to investigte the gate controlled diode structure for ionic concentration measurement. It includes device fabrication, characterization, device physics and modeling of the gate controlled diode structure. The differences of turn on voltages and surface generation currents in the (100) and (111) silicon crystallographic orientation of the sample device were observed. Therefore the dependence of these two factors of the silicon crystallographic orientation was investigated. It was observed that drifts arose after extended immersion of the sample device in acid or base solutions. The surface generation-recombination velocity of both (100) and (111) increased. The increase in the interfacial traps for both surface, determined by the turn on voltage was directly proportional to the surface generation-recombination velocity increase.

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