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http://dx.doi.org/10.4313/JKEM.2002.15.3.214

Crystallographic Orientation Dependence Of Electrical Properties of Carbon-doped GaAs Grown by Low Pressure Metalorganic Chemical Vapor Deposition Using CBr4  

손창식 (신라대학교 광전자공학과, 극초단광전자연구소)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.15, no.3, 2002 , pp. 214-219 More about this Journal
Abstract
In order to elucidate the crystallographic orientation dependence of electrical properties of carbon (C)-doped GaAs epilayers, C incorporation into GaAs epilayers on high-index GaAs substrates with various crystallographic orientations from (100) to (111)A has been performed by a low pressure metalorganic chemical vapor deposition using C tetrabromide ($CBt_4$) as a C source. The hole concentration of C-doped GaAs epilayers rapidly decreases with a hump at (311)A with increasing the offset angle. Although the growth temperature and the V/III ratio are varied, the crystallographic orientation dependence of hole concentration show a same trend. The above behaviors indicate that the bonding strength of As sites on a glowing surface plays an important role in the C incorporation into the high-index GaAs substrates.
Keywords
Carbon; Doping; High-index GaAs; MOCVD; $CBr_4$;
Citations & Related Records
Times Cited By KSCI : 1  (Citation Analysis)
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