• 한국생물공학회:학술대회논문집
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• 한국생물공학회 2005년도 생물공학의 동향(XVI)
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• pp.327-333
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• 2005

Dihydroxy-acid dehydratase (DHAD, 2,3-dihydroxy-acid hydrolyase, EC 4.2.1.9) is one of the key enzymes involved in the biosynthetic pathway of the branched chain amino acid isoleucine and valine. Although the enzyme have been purified and characterized in various mesophiles including bacteria and eukarya, the biochemical properties of DHAD has bee not yet reported from hyperthermophilic archaea. In this study, we cloned, expressed, and purified a DHAD homologue from the thermoacidophilic archaeon Sulfolobus solfataricus P2, which grows optimally at $80\;^{\circ}C$ and pH 3, in E. coli. Characterization of the recombinant S. solfataricus DHAD (rSso_DHAD) revealed that it is the dimeric protein with a subunit molecular weight of 64,000 Da in native structure. rDHAD showed the highest activity toward 2,3-dihydroxyisovaleric acid among 17 aldonic acid substrates Interestingly, this enzyme also displayed 50 % activities toward some pentonic acids and hexonic acids when compared with the activity of this enzyme to the natural substrate. Moreover, rSso_DHAD indicated relatively higher activity toward D-gluconate than any other hexonic acids tested in substrates. $K_m$ and $V_{max}$ values of rSso_DHAD were calculated as $0.54\;{\pm}\;0.04\;mM$ toward 2,3dihydroxyisovalerate and $2.42\;{\pm}\;0.19\;mM$ toward D-gluconate, and as $21.6\;{\pm}\;0.4\;U/mg$ toward 2,3-dihydroxyisovalerate and $13.8\;{\pm}\;0.4\;U/mg$ toward D-gluconate, respectively. In the study for biochemical properties, the enzyme shows maximal activity between $70^{\circ}C$ and $80^{\circ}C$, and the pH range of pH 7.5 to 8.5. The half life time at $80^{\circ}C$ was 30 min. A divalent metal ion, $Mn^{2+}$, was only powerful activators, whereas other metal ions made the enzyme activity reduced. $Hg^{2+}$, organic mercury, and EDTA also strongly inhibited enzyme activities. Particularly, the rSso_DHAD activity was very stable under aerobic condition although the counterparts reported from mesophiles had been deactivated by oxygen.

• 생태와환경
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• 제43권3호
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• pp.437-450
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• 2010

국내산 이매패 말조개가 하천의 수질 및 부착조류 성장에 미치는 생태학적 영향을 파악하기 위하여 제작한 인공수로에 부착기질을 설치하고 패류를 도입한 다음 10일 동안 수질 및 조류 현존량 변화를 조사하였다. 인공수로는 아크릴 재질로 유속형성을 위하여 계단식으로 제작하고 부영양호 표층수를 유입하여 일정한 유속으로 통과시켰다. 부착조류 기질로 상용 슬라이드글라스를 패류도입 1주일 전에 각 계단에 40개씩 설치하였다. 패류는 435 ind. $m^{-2}$로 도입하고 10일간 매일 동일한 시간에 수온, pH, 전기전도도, 용존산소, 탁도, 광도, 영양염, 그리고 기철 및 수종의 SS, Chl-$\alpha$, 조류 현존량 등을 각각 분석하였다. 말조개 처리는 수종 탁도(60%), SS(62.5%), Chl-$\alpha$(72.2%), TP(23.9%), 용존산소(19.5%) 농도를 감소시킨 반면, 암모니아 농도는 증가시켰다. 패류처리군의 기질 SS(67%)와 Chl-$\alpha$(89.4%)는 뚜렷하게 증가한 반면 수중의 조류 현존량은 뚜렷하게 감소하였다. 결국 하천의 패류는 수중 유기물의 효과적인 저감을 통하여 투명도 개선을 유도하고 동시에 배출된 영양염 및 배설물은 부착 조류 성장을 촉진할 수 있는 것으로 사료되었다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 1999년도 제17회 학술발표회 논문개요집
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• pp.211-211
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• 1999

Titanium nitride (TiN) thin films have useful properties including high hardness, good electrical conductivity, high melting point, and chemical inertness. The applications have included wear-resistant hard coatings on machine tools and bearings, decorative coating making use of the golden color, thermal control coatings for widows, and erosion resistant coatings for spacecraft plasma probes. For all these applications as feature sizes shrink and aspect ratios grow, the issue of good step coverage becomes increasingly important. It is therefore essential to manufacture conformal coatings of TiN. The growth of TiN thin films by chemical vapor deposition (CVD) is of great interest for achieving conformal deposition. The most widely used precursor for TiN is TiCl4 and NH3. However, chlorine impurity in the as-grown films and relatively high deposition temperature (>$600^{\circ}C$) are considered major drawbacks from actual device fabrication. To overcome these problems, recently, MOCVD processes including plasma assisted have been suggested. In this study, therefore, we have doposited Ti(C, N) thin films on Si(100) and D2 steel substrates in the temperature range of 150-30$0^{\circ}C$ using tetrakis diethylamido titanium (TDEAT) and titanium isopropoxide (TIP) by pulsed DC plamsa enhanced metal-organic chemical vapor deposition (PEMOCVD) method. Polycrystalline Ti(C, N) thin films were successfully grown on either D2 steel or Si(100) surfaces at temperature as low as 15$0^{\circ}C$. Compositions of the as-grown films were determined with XPS and RBS. From XPS analysis, thin films of Ti(C, N) with low oxygen concentration were obtained. RBS data were also confirmed the changes of stoichiometry and microhardness of our films. Radical formation and ionization behaviors in plasma are analyzed by optical emission spectroscopy (OES) at various pulsed bias and gases conditions. H2 and He+H2 gases are used as carrier gases to compare plasma parameter and the effect of N2 and NH3 gases as reactive gas is also evaluated in reduction of C content of the films. In this study, we fond that He and H2 mixture gas is very effective in enhancing ionization of radicals, especially N resulting is high hardness. The higher hardness of film is obtained to be ca. 1700 HK 0.01 but it depends on gas species and bias voltage. The proper process is evident for H and N2 gas atmosphere and bias voltage of 600V. However, NH3 gas highly reduces formation of CN radical, thereby decreasing C content of Ti(C, N) thin films in a great deal. Compared to PVD TiN films, the Ti(C, N) film grown by PEMOCVD has very good conformability; the step coverage exceeds 85% with an aspect ratio of more than 3.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.344-344
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• 2014

Transparent amorphous oxide semiconductors such as a In-Ga-Zn-O (a-IGZO) have advantages for large area electronic devices; e.g., uniform deposition at a large area, optical transparency, a smooth surface, and large electron mobility >10 cm2/Vs, which is more than an order of magnitude larger than that of hydrogen amorphous silicon (a-Si;H).1) Thin film transistors (TFTs) that employ amorphous oxide semiconductors such as ZnO, In-Ga-Zn-O, or Hf-In-Zn-O (HIZO) are currently subject of intensive study owing to their high potential for application in flat panel displays. The device fabrication process involves a series of thin film deposition and photolithographic patterning steps. In order to minimize contamination, the substrates usually undergo a cleaning procedure using deionized water, before and after the growth of thin films by sputtering methods. The devices structure were fabricated top-contact gate TFTs using the a-IGZO films on the plastic substrates. The channel width and length were 80 and 20 um, respectively. The source and drain electrode regions were defined by photolithography and wet etching process. The electrodes consisting of Ti(15 nm)/Al(120 nm)/Ti(15nm) trilayers were deposited by direct current sputtering. The 30 nm thickness active IGZO layer deposited by rf magnetron sputtering at room temperature. The deposition condition is as follows: a rf power 200 W, a pressure of 5 mtorr, 10% of oxygen [O2/(O2+Ar)=0.1], and room temperature. A 9-nm-thick Al2O3 layer was formed as a first, third gate insulator by ALD deposition. A 290-nm-thick SS6908 organic dielectrics formed as second gate insulator by spin-coating. The schematic structure of the IGZO TFT is top gate contact geometry device structure for typical TFTs fabricated in this study. Drain current (IDS) versus drain-source voltage (VDS) output characteristics curve of a IGZO TFTs fabricated using the 3-layer gate insulator on a plastic substrate and log(IDS)-gate voltage (VG) characteristics for typical IGZO TFTs. The TFTs device has a channel width (W) of $80{\mu}m$ and a channel length (L) of $20{\mu}m$. The IDS-VDS curves showed well-defined transistor characteristics with saturation effects at VG>-10 V and VDS>-20 V for the inkjet printing IGZO device. The carrier charge mobility was determined to be 15.18 cm^2 V-1s-1 with FET threshold voltage of -3 V and on/off current ratio 10^9.

• 마이크로전자및패키징학회지
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• 제13권4호
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• pp.51-56
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• 2006

ITO(Indium tin oxide)glass 기판 위에 PEDOT:PSS[poly(3,4-ethylenedioxythiophene):poly (styrene sulfonate)]와 PVX[poly(N-vinyl carbazole)] 고분자 물질을 정공 주입 및 수송층으로, 발광층으로 PFO-poss[Poly(9,9-dioctylfluorenyl-2,7-diyl) end capped with poss]를 사용하여 ITO/PEDOT:PSS/PVK/PFO-poss/LiF/Al 구조의 고분자 발광다이오드를 제작하였다. 이때 스핀코팅을 위한 발광 유기재료의 농도와 열처리 온도가 소자의 전기적, 광학적 특성에 미치는 영향을 조사하였다. 동일한 PFO-poss 농도에서 열처리 온도가 $100^{\circ}C$에서 $200^{\circ}C$로 증가할 경우 PLED 소자의 전류밀도와 휘도특성이 증가하는 경향을 나타내었다. 1.0 wt% 농도를 갖는 PFO-poss 유기물 발광충을 $200^{\circ}C$ 온도로 열처리 할 경우 $958\;cd/m^{2}$의 최대 휘도를 나타내었으며 발광파장은 523 nm 녹색계통의 파장이 크게 증가하여 청백색에 가까운 발광을 나타내었다. PFO-poss 농도증가(0.5 wt%에서 1.0 wt%)와 함께 PLED 소자의 열처리 온도를 $100^{\circ}C$에서 $200^{\circ}C$로 증가할 경우 CIE 색좌표는 청색 (x, y : 0.17, 0.14)에서 청백색 (x, y = 0.29, 0.41)발광으로 천이하는 경향을 나타내었다.

• 한국식품과학회지
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• 제27권4호
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• pp.564-570
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• 1995

Aspartame의 전구체인 BzAPM을 고정화 thermolysin으로 합성할 때 최적 조건을 찾고자 기질의 농도, 반응 pH 및 온도 그리고 금속이온, benzoic acid, Phe, NaCl의 농도가 어떤 영향을 주는지 조사하였다. 반응기질인 PheOMe와 BzAsp를 25% DMSO 및 20% PEG 200이 함유된 유기 용매계에서 반응시켰다. Bz-Asp의 농도를 100 mM로 일정하게 하였을 때 BzAPM의 합성 속도는 PheOMe의 농도가 증가함에 따라 직선형으로 증가하였으며, PheOMe의 농도를 300 mM로 하고 Bz-Asp의 농도를 변경시킨 경우에는 200 mM에서 반응 속도가 최고에 달하였다. BzAPM의 생산을 위한 최적 pH는 6.1 전후로 나타났으며, 최적 반응 온도는 $40^{\circ}C$이었다. 2가 금속 이온을 5mM로 첨가했을 때, $Zn^{2+},\;Mg^{2+},\;Fe^{2+},\;Cu^{2+}$이온은 고정화 thermolysin의 BzAPM 합성 수율을 저하시켰으나, $Co^{2+}$ 이온은 합성 수율을 2배 정도 증가시키는 것으로 확인되었다. $Co^{2+}$ 이온을 $Ca^{2+}$ 이온과 함께 첨가하면 $Co^{2+}$이온만 첨가할 때보다 합성 수율이 높게 나타났다. Benzoic acid와 Phe이 BzAPM의 합성을 저해하는 것으로 나타났으며, NaCl도 10% 농도로 첨가시에 합성을 약 25% 저하시켰다.

• 한국전자통신학회논문지
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• 제16권6호
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• pp.1095-1100
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• 2021

본 연구에서는 고주파 마그네트론 스퍼터링 법으로 유리, 사파이어, PEN 기판 위에 ITZO 박막을 증착하여 전기적 및 광학적 특성을 조사하였다. 유리와 사파이어 기판위에 증착한 ITZO 박막의 비저항은 각각 3.08×10-4 과 3.21×10-4 Ω-cm로 큰 차이를 보이지 않은 반면 PEN 기판위에 증착한 ITZO 박막의 비저항은 7.36×10-4 Ω-cm로 다소 큰 값이 측정되었다. 기판의 종류와 무관하게 ITZO 박막의 평균 투과도의 차이는 크지 않았다. 유리 기판위에 증착한 ITZO 박막의 비정질 실리콘 박막 태양전지의 흡수영역에서의 평균 투과도와 P3HT : PCBM 유기물 활성층의 흡수영역에서의 평균 투과도를 이용하여 구한 재료평가지수는 각각 10.52와 9.28×10-3 Ω-1로 가장 우수한 값을 나타내었다. XRD와 AFM 측정을 통해, 기판의 종류에 상관없이 모든 ITZO 박막이 비정질 구조를 나타내며 핀홀이나 크랙 같은 결함이 없는 표면을 가짐을 확인할 수 있었다.

• 한국결정성장학회지
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• 제33권4호
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• pp.125-131
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• 2023

Ga₂O₃ 박막은 금속 유기 화학기상증착법을 사용하여 Ti 기판에 350~500℃ 범위의 비교적 낮은 온도로 증착되었다. 낮은 온도를 선택하여 Ti 기판의 열적 변형과 Ga₂O₃ 박막에 미치는 영향을 최소화하였다. 500℃ 이하에서 박막 형성 시, 기판 표면에서 원자들의 확산에너지가 충분하지 못하여 박막 표면이 3차원 성장으로 인해 거칠어지는 경향을 보였다. 그러나 500℃에서 형성된 박막은 2차원 박막 형태로 형성되었으며 비교적 균일한 표면을 가지고 있음을 확인하였다. 모든 증착된 박막은 비정질 구조였다. Ti 금속 기판 위에 형성된 Ga₂O₃ 박막 위에 금속 전극을 형성하여 수직 쇼트키 다이오드를 제작하였으며, 제작된 다이오드의 전류-전압(I-V) 및 캐패시턴스-전압(C-V) 특성을 평가하였다. I-V 측정 결과, 대부분의 다이오드 소자에서 매우 높은 동작 전압을 나타냈으며, 비교적 균일한 표면을 갖는 500℃에서 성장한 샘플은 가장 낮은 동작 전압을 가짐을 확인할 수 있었다. 또한, C-V 측정 결과, 박막의 성장 온도가 높을수록 커패시턴스 값이 증가하는 것을 확인할 수 있었다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 추계학술대회 논문집
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• pp.5-5
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• 2009

Thin-film-transistors (TFTs) that can be prepared at low temperatures have attracted much attention because of the great potential for transparent and flexible electronics. One of the mainstreams in this field is the use of organic semiconductors such as pentacene. But device performance of the organic TFTs is still limited due to low field-effect mobility and rapid degradation after exposing to air. Alternative approach is the use of amorphous oxide semiconductors as a channel. Amorphous oxide semiconductors (AOSs) based TFTs showed the fast technological development, because AOS films can be fabricated at room temperature and exhibit the possibility in application like flexible display, electronic paper, and larges solar cells. Among the various AOSs, a-IGZO has lots of advantages because it has high channel mobility, uniform surface roughness and good transparency. [1] The high mobility is attributed to the overlap of spherical s-orbital of the heavy post-transition metal cations. This study demonstrated the effect of the variation in channel thickness from 30nm to 200nm on the TFT device performance. When the thickness was increased, turn-on voltage and subthreshold swing was decreased. The a-IGZO channels and source/drain metals were deposited with shadow mask. The a-IGZO channel layer was deposited on $SiO_2$/p-Si substrates by RF magnetron sputtering, where RF power is 150W. And working pressure is 3m Torr, at $O_2/Ar$ (2/28 sccm) atmosphere. The electrodes were formed with electron-beam evaporated Ti (30 nm) and Au (70 nm) bilayer. Finally, Al (150nm) as a gate metal was thermal-evaporated. TFT devices were heat-treated in a furnace at 250 $^{\circ}C$ and nitrogen atmosphere for 1hour. The electrical properties of the TFTs were measured using a probe-station. The TFT with channel thickness of 150nm exhibits a good subthreshold swing (SS) of 0.72 V/decade and on-off ratio of $1{\times}10^8$. The field effect mobility and threshold voltage were evaluated as 7.2 and 8 V, respectively.

• 한국식품영양과학회지
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• 제22권3호
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• pp.359-366
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• 1993

Molds are eucaryotic, multicellular, multinucleate, filamentous organisms that reproduce by forming asexual and sexual spores. The spores are readily spread through the air and because they are very light-weight and tend to behave like dust particles, they are easily disseminated on air currents. Molds therefore are ubiquitous organisms that are found everywhere, throughout the environment. The natural habitat of most molds is the soil where they grow on and break down decaying vegetable matter. Thus, where there is decaying organic matter in an area, there are often high numbers of mold spores in the atmosphere of the environment. Molds are common contaminants of plant materials, including grains and seeds, and therefore readily contaminate human foods and animal feeds. Molds can tolerate relatively harsh environments and adapt to more severe stresses than most microorganisms. They require less available moisture for growth than bacteria and yeasts and can grow on substrates containing concentrations of sugar or salt that bacteria can not tolerate. Most molds are highly aerobic, requiring oxygen for growth. Molds grow over a wide temperature range, but few can grow at extremely high temperatures. Molds have simple nutritional requirements, requiring primarily a source of carbon and simple organic nitrogen. Because of this, molds can grow on many foods and feed materials and cause spoilage and deterioration. Some molds ran produce toxic substances known as mycotoxins, which are toxic to humans and animals. Mold growth in foods can be controlled by manipulating factors such as atmosphere, moisture content, water activity, relative humidity and temperature. The presence of other microorganisms tends to restrict mold growth, especially if conditions are favorable for growth of bacteria or yeasts. Certain chemicals in the substrate may also inhibit mold growth. These may be naturally occurring or added for the purpose of preservation. Only a relatively few of the approximately 100,000 different species of fungi are involved in the deterioration of food and agricultural commodities and production of mycotoxins. Deteriorative and toxic mold species are found primarily in the genera Aspergillus, Penicillium, Fusarium, Alternaria, Trichothecium, Trichoderma, Rhizopus, Mucor and Cladosporium. While many molds can be observed as surface growth on foods, they also often occur as internal contaminants of nuts, seeds and grains. Mold deterioration of foods and agricultural commodities is a serious problem world-wide. However, molds also pose hazards to human and animal health in the form of mycotoxins, as infectious agents and as respiratory irritants and allergens. Thus, molds are involved in a number of human and animal diseases with serious implication for health.