• 한국생물공학회:학술대회논문집
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• 2005.04a
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• pp.327-333
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• 2005

Dihydroxy-acid dehydratase (DHAD, 2,3-dihydroxy-acid hydrolyase, EC 4.2.1.9) is one of the key enzymes involved in the biosynthetic pathway of the branched chain amino acid isoleucine and valine. Although the enzyme have been purified and characterized in various mesophiles including bacteria and eukarya, the biochemical properties of DHAD has bee not yet reported from hyperthermophilic archaea. In this study, we cloned, expressed, and purified a DHAD homologue from the thermoacidophilic archaeon Sulfolobus solfataricus P2, which grows optimally at $80\;^{\circ}C$ and pH 3, in E. coli. Characterization of the recombinant S. solfataricus DHAD (rSso_DHAD) revealed that it is the dimeric protein with a subunit molecular weight of 64,000 Da in native structure. rDHAD showed the highest activity toward 2,3-dihydroxyisovaleric acid among 17 aldonic acid substrates Interestingly, this enzyme also displayed 50 % activities toward some pentonic acids and hexonic acids when compared with the activity of this enzyme to the natural substrate. Moreover, rSso_DHAD indicated relatively higher activity toward D-gluconate than any other hexonic acids tested in substrates. $K_m$ and $V_{max}$ values of rSso_DHAD were calculated as $0.54\;{\pm}\;0.04\;mM$ toward 2,3dihydroxyisovalerate and $2.42\;{\pm}\;0.19\;mM$ toward D-gluconate, and as $21.6\;{\pm}\;0.4\;U/mg$ toward 2,3-dihydroxyisovalerate and $13.8\;{\pm}\;0.4\;U/mg$ toward D-gluconate, respectively. In the study for biochemical properties, the enzyme shows maximal activity between $70^{\circ}C$ and $80^{\circ}C$, and the pH range of pH 7.5 to 8.5. The half life time at $80^{\circ}C$ was 30 min. A divalent metal ion, $Mn^{2+}$, was only powerful activators, whereas other metal ions made the enzyme activity reduced. $Hg^{2+}$, organic mercury, and EDTA also strongly inhibited enzyme activities. Particularly, the rSso_DHAD activity was very stable under aerobic condition although the counterparts reported from mesophiles had been deactivated by oxygen.

• Korean Journal of Ecology and Environment
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• v.43 no.3
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• pp.437-450
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• 2010

Ecological influences of indigenous freshwater bivalve Unio douglasiae on the water quality and epilithic diatom community was examined with artificial stream (AST), which constructed in a laboratory daily receiving the eutrophic lake water. For the colonization of new periphyton community, forty commercial slide glasses were deposited as a substrate into the lowest part of each AST. Prior to 1 week, the AST was operated to induce the freely-colonization of the algal community in the absence of mussels. After the mussels was introduced at 435 indiv. $m^{-2}$ between step 1 and step 5, the passed water and substrates were daily collected to analysis the change of water quality and lotic and lentic algae abundance for 10 days. Compared to the control, turbidity (60.0% of control), suspended solids (62.5%), and chlorophyll-$\alpha$ (72.2%) in mussel-passed waters were decreased significantly, while a strong increase of ammonia (up to 800% of control) was companied with the decrease of dissolved oxygen (19.5% of control) and total phosphorus (23.9%), respectively. On average, the concentrations of suspended solids (67.0% of control) and chlorophyll-$\alpha$ (89.4%) in mussel-treated substrates were remarkably increased, however algal abundance in its water simultaneously decreased. These results indicate that incidentally or purposely mussel introductions can decrease organic matter of the stream and increase transparency of stream water, however, mussel-mediated nutrient and pseudofeces release may stimulate the adverse growth of periphyton or phytoplankton community in the lower stream or reservoir.

• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.211-211
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• 1999

Titanium nitride (TiN) thin films have useful properties including high hardness, good electrical conductivity, high melting point, and chemical inertness. The applications have included wear-resistant hard coatings on machine tools and bearings, decorative coating making use of the golden color, thermal control coatings for widows, and erosion resistant coatings for spacecraft plasma probes. For all these applications as feature sizes shrink and aspect ratios grow, the issue of good step coverage becomes increasingly important. It is therefore essential to manufacture conformal coatings of TiN. The growth of TiN thin films by chemical vapor deposition (CVD) is of great interest for achieving conformal deposition. The most widely used precursor for TiN is TiCl4 and NH3. However, chlorine impurity in the as-grown films and relatively high deposition temperature (>$600^{\circ}C$) are considered major drawbacks from actual device fabrication. To overcome these problems, recently, MOCVD processes including plasma assisted have been suggested. In this study, therefore, we have doposited Ti(C, N) thin films on Si(100) and D2 steel substrates in the temperature range of 150-30$0^{\circ}C$ using tetrakis diethylamido titanium (TDEAT) and titanium isopropoxide (TIP) by pulsed DC plamsa enhanced metal-organic chemical vapor deposition (PEMOCVD) method. Polycrystalline Ti(C, N) thin films were successfully grown on either D2 steel or Si(100) surfaces at temperature as low as 15$0^{\circ}C$. Compositions of the as-grown films were determined with XPS and RBS. From XPS analysis, thin films of Ti(C, N) with low oxygen concentration were obtained. RBS data were also confirmed the changes of stoichiometry and microhardness of our films. Radical formation and ionization behaviors in plasma are analyzed by optical emission spectroscopy (OES) at various pulsed bias and gases conditions. H2 and He+H2 gases are used as carrier gases to compare plasma parameter and the effect of N2 and NH3 gases as reactive gas is also evaluated in reduction of C content of the films. In this study, we fond that He and H2 mixture gas is very effective in enhancing ionization of radicals, especially N resulting is high hardness. The higher hardness of film is obtained to be ca. 1700 HK 0.01 but it depends on gas species and bias voltage. The proper process is evident for H and N2 gas atmosphere and bias voltage of 600V. However, NH3 gas highly reduces formation of CN radical, thereby decreasing C content of Ti(C, N) thin films in a great deal. Compared to PVD TiN films, the Ti(C, N) film grown by PEMOCVD has very good conformability; the step coverage exceeds 85% with an aspect ratio of more than 3.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.344-344
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• 2014

Transparent amorphous oxide semiconductors such as a In-Ga-Zn-O (a-IGZO) have advantages for large area electronic devices; e.g., uniform deposition at a large area, optical transparency, a smooth surface, and large electron mobility >10 cm2/Vs, which is more than an order of magnitude larger than that of hydrogen amorphous silicon (a-Si;H).1) Thin film transistors (TFTs) that employ amorphous oxide semiconductors such as ZnO, In-Ga-Zn-O, or Hf-In-Zn-O (HIZO) are currently subject of intensive study owing to their high potential for application in flat panel displays. The device fabrication process involves a series of thin film deposition and photolithographic patterning steps. In order to minimize contamination, the substrates usually undergo a cleaning procedure using deionized water, before and after the growth of thin films by sputtering methods. The devices structure were fabricated top-contact gate TFTs using the a-IGZO films on the plastic substrates. The channel width and length were 80 and 20 um, respectively. The source and drain electrode regions were defined by photolithography and wet etching process. The electrodes consisting of Ti(15 nm)/Al(120 nm)/Ti(15nm) trilayers were deposited by direct current sputtering. The 30 nm thickness active IGZO layer deposited by rf magnetron sputtering at room temperature. The deposition condition is as follows: a rf power 200 W, a pressure of 5 mtorr, 10% of oxygen [O2/(O2+Ar)=0.1], and room temperature. A 9-nm-thick Al2O3 layer was formed as a first, third gate insulator by ALD deposition. A 290-nm-thick SS6908 organic dielectrics formed as second gate insulator by spin-coating. The schematic structure of the IGZO TFT is top gate contact geometry device structure for typical TFTs fabricated in this study. Drain current (IDS) versus drain-source voltage (VDS) output characteristics curve of a IGZO TFTs fabricated using the 3-layer gate insulator on a plastic substrate and log(IDS)-gate voltage (VG) characteristics for typical IGZO TFTs. The TFTs device has a channel width (W) of $80{\mu}m$ and a channel length (L) of $20{\mu}m$. The IDS-VDS curves showed well-defined transistor characteristics with saturation effects at VG>-10 V and VDS>-20 V for the inkjet printing IGZO device. The carrier charge mobility was determined to be 15.18 cm^2 V-1s-1 with FET threshold voltage of -3 V and on/off current ratio 10^9.

• Journal of the Microelectronics and Packaging Society
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• v.13 no.4
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• pp.51-56
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• 2006

Polymer light emitting diodes (PLEDs) with ITO/EDOT:PSS/PVK/PFO-poss/LiF/Al structures were prepared by the spin coating method on ITO(indium tin oxide)/glass substrates. PFO-poss[Poly(9,9-dioctylfluorenyl-2,7-diyl) end capped with poss] was used as light emitting polymer. PVK[poly(N-vinyl carbazole)] and PEDOT:PSS [poly(3,4-ethylenedioxythiophene):poly(styrene sulfolnate)] polymers were used as the hole injection and transport materials. The effect of PFO-poss concentration and the heating temperatures on the electrical and optical properties of the devices were investigated. At the same concentration of PFO-poss solution, the current density and luminance of PLED device tend to increase as the annealing temperature increase from $100^{\circ}C$ to $200^{\circ}C$. The maximum luminance was found to be about 958 cd/m2 at 13V for the PLED device with 1.0 wt% PFO-poss at the annealing temperature of $200^{\circ}C$. In addition, the PLED device showed bluish white emission through the strong greenish peak with 523 nm in wavelength. As the concentration of PFO-poss increase from 0.5 wt% to 1.0 wt% and temperature of PLEDs increase from $100^{\circ}C$ to $200^{\circ}C$, the emission color tend to be shifted from blue with (x, y) = (0.17,0.14) to bluish white with (x, y) : (0.29,0.41) in CIE color coordinate.

• Korean Journal of Food Science and Technology
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• v.27 no.4
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• pp.564-570
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• 1995

N-Benzoyl-L-aspartyl-L-phenylalanine methyl ester(BzAPM), a novel aspartame precursor, was investigated for its enzymatic synthesis by immobilized thermolysin using a water-miscible organic solvent system. The substrate used were N-benzoyl-L-aspartic acid(BzAsp) and L-phenylalanine methyl ester (PheOMe). Synthetic conditions such as substrates concentration, temperature, pH, and some metallic ions were varied to study their effects on BzAPM synthesis. The synthetic reaction rate increased linearly as the PheOMe concentration increased at a constant concentration of BzAsp(100 mM), and the maximum reaction rate was obtained at BzAsp concentration of 200 mM when 300 mM PheOMe was used. The optimum pH and temperature were found to be 6.1 and $40^{\circ}C$, respectively. The metallic ions such as $Zn^{2+},\;Mg^{2+},\;Mn^{2+},\;Fe^{2+},\;Pb^{2+}\;and\;Cu^{2+}$ at 5 mM level showed inhibitory effect on BzAPM synthesis, while $Co^{2+}$ and $Ca^{2+}$ ion increased synthesis. $Co^{2+}$ ion was also found to have synergistic effect with $Ca^{2+}$ ion. Benzoic acid, L-phenylalanin and NaCl showed inhibitory effect.

• The Journal of the Korea institute of electronic communication sciences
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• v.16 no.6
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• pp.1095-1100
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• 2021

In this study, ITZO thin films were deposited on glass, sapphire, and PEN substrates by RF magnetron sputtering, and their electrical and optical properties were investigated. The resistivity of the ITZO thin film deposited on the glass and sapphire substrates was 3.08×10-4 and 3.21×10-4 Ω-cm, respectively, showing no significant difference, whereas the resistivity of the ITZO thin film deposited on the PEN substrate was 7.36×10-4 Ω-cm, which was a rather large value. Regardless of the type of substrate, there was no significant difference in the average transmittance of the ITZO thin film. Figure of Merits of the ITZO thin film deposited on the glass substrate obtained using the average transmittance in the absorption region of the amorphous silicon thin film solar cell and the absorption region of the P3HT : PCBM organic active layer were 10.52 and 9.28×10-3 Ω-1, respectively, which showed the best values. Through XRD and AFM measurements, it was confirmed that all ITZO thin films exhibited an amorphous structure and had no defects such as pinholes or cracks, regardless of the substrate type.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.33 no.4
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• pp.125-131
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• 2023

Ga₂O₃ thin films were deposited on Ti substrates using metal organic chemical vapor deposition (MOCVD) at temperatures ranging from 350 to 500℃. Lower deposition temperatures were chosen to minimize thermal deformation of the Ti substrate and its impact on the Ga₂O₃ film. Film surfaces tended to become rough at temperatures below 500℃ due to three-dimensional growth, but the film formed at 500℃ had the most uniform surface. All deposited films were amorphous in structure. Vertical Schottky diodes were fabricated and I-V and C-V measurements were performed. I-V measurements showed higher operating voltages compared to a typical SBD for films grown at different temperatures. The sample grown at 500℃, which had the most uniform surface, exhibited the lowest operating voltage. Higher growth temperatures resulted in higher capacitance values according to C-V measurements.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.5-5
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• 2009

Thin-film-transistors (TFTs) that can be prepared at low temperatures have attracted much attention because of the great potential for transparent and flexible electronics. One of the mainstreams in this field is the use of organic semiconductors such as pentacene. But device performance of the organic TFTs is still limited due to low field-effect mobility and rapid degradation after exposing to air. Alternative approach is the use of amorphous oxide semiconductors as a channel. Amorphous oxide semiconductors (AOSs) based TFTs showed the fast technological development, because AOS films can be fabricated at room temperature and exhibit the possibility in application like flexible display, electronic paper, and larges solar cells. Among the various AOSs, a-IGZO has lots of advantages because it has high channel mobility, uniform surface roughness and good transparency. [1] The high mobility is attributed to the overlap of spherical s-orbital of the heavy post-transition metal cations. This study demonstrated the effect of the variation in channel thickness from 30nm to 200nm on the TFT device performance. When the thickness was increased, turn-on voltage and subthreshold swing was decreased. The a-IGZO channels and source/drain metals were deposited with shadow mask. The a-IGZO channel layer was deposited on $SiO_2$/p-Si substrates by RF magnetron sputtering, where RF power is 150W. And working pressure is 3m Torr, at $O_2/Ar$ (2/28 sccm) atmosphere. The electrodes were formed with electron-beam evaporated Ti (30 nm) and Au (70 nm) bilayer. Finally, Al (150nm) as a gate metal was thermal-evaporated. TFT devices were heat-treated in a furnace at 250 $^{\circ}C$ and nitrogen atmosphere for 1hour. The electrical properties of the TFTs were measured using a probe-station. The TFT with channel thickness of 150nm exhibits a good subthreshold swing (SS) of 0.72 V/decade and on-off ratio of $1{\times}10^8$. The field effect mobility and threshold voltage were evaluated as 7.2 and 8 V, respectively.

• Journal of the Korean Society of Food Science and Nutrition
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• v.22 no.3
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• pp.359-366
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• 1993

Molds are eucaryotic, multicellular, multinucleate, filamentous organisms that reproduce by forming asexual and sexual spores. The spores are readily spread through the air and because they are very light-weight and tend to behave like dust particles, they are easily disseminated on air currents. Molds therefore are ubiquitous organisms that are found everywhere, throughout the environment. The natural habitat of most molds is the soil where they grow on and break down decaying vegetable matter. Thus, where there is decaying organic matter in an area, there are often high numbers of mold spores in the atmosphere of the environment. Molds are common contaminants of plant materials, including grains and seeds, and therefore readily contaminate human foods and animal feeds. Molds can tolerate relatively harsh environments and adapt to more severe stresses than most microorganisms. They require less available moisture for growth than bacteria and yeasts and can grow on substrates containing concentrations of sugar or salt that bacteria can not tolerate. Most molds are highly aerobic, requiring oxygen for growth. Molds grow over a wide temperature range, but few can grow at extremely high temperatures. Molds have simple nutritional requirements, requiring primarily a source of carbon and simple organic nitrogen. Because of this, molds can grow on many foods and feed materials and cause spoilage and deterioration. Some molds ran produce toxic substances known as mycotoxins, which are toxic to humans and animals. Mold growth in foods can be controlled by manipulating factors such as atmosphere, moisture content, water activity, relative humidity and temperature. The presence of other microorganisms tends to restrict mold growth, especially if conditions are favorable for growth of bacteria or yeasts. Certain chemicals in the substrate may also inhibit mold growth. These may be naturally occurring or added for the purpose of preservation. Only a relatively few of the approximately 100,000 different species of fungi are involved in the deterioration of food and agricultural commodities and production of mycotoxins. Deteriorative and toxic mold species are found primarily in the genera Aspergillus, Penicillium, Fusarium, Alternaria, Trichothecium, Trichoderma, Rhizopus, Mucor and Cladosporium. While many molds can be observed as surface growth on foods, they also often occur as internal contaminants of nuts, seeds and grains. Mold deterioration of foods and agricultural commodities is a serious problem world-wide. However, molds also pose hazards to human and animal health in the form of mycotoxins, as infectious agents and as respiratory irritants and allergens. Thus, molds are involved in a number of human and animal diseases with serious implication for health.