• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.254-254
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• 2011

The memories with nano-particles are very attractive because they are promising candidates for low operating voltage, long retention time and fast program/erase speed. In recent, various nano-floating gate memories with metal-oxide nanocrystals embedded in organic and inorganic layers have been reported. Because of the carrier generation in semiconductor, induced photon pulse enhanced the program/erase speed of memory device. We studied photo-induced electrical properties of these metal-oxide nanocrystal memory devices. At first, 2~10-nm-thick Sn and In metals were deposited by using thermal evaporation onto Si wafer including a channel with $n^+$ poly-Si source/drain in which the length and width are 10 ${\mu}m$ each. Then, a poly-amic-acid (PAA) was spin coated on the deposited Sn film. The PAA precursor used in this study was prepared by dissolving biphenyl-tetracarboxylic dianhydride-phenylene diamine (BPDA-PDA) commercial polyamic acid in N-methyl-2-pyrrolidon (NMP). Then the samples were cured at 400$^{\circ}C$ for 1 hour in N atmosphere after drying at 135$^{\circ}C$ for 30 min through rapid thermal annealing. The deposition of aluminum layer with thickness of 200 nm was followed by using a thermal evaporator, and then the gate electrode was defined by photolithography and etching. The electrical properties were measured at room temperature using an HP4156a precision semiconductor parameter analyzer and an Agilent 81101A pulse generator. Also, the optical pulse for the study on photo-induced electrical properties was applied by Xeon lamp light source and a monochromator system.

• Proceedings of the Korea Crystallographic Association Conference
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• 2002.11a
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• pp.19-19
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• 2002

Perovskite-type titanate dielectrics have attracted much attention in memory devices such as DRAMs or FeRAMs due to their high dielectric constants. However, low volatility of the Ba, Sr, Pb or Zr precursors with only thd ligands has limitations in obtaining high quality thin films by liquid source metal organic chemical vapor deposition (LS-MOCVD) processes. To improve the volatility of these precursors, many attempts have been made such as adding polyether ligands to satisfy the coordinative saturation. We report the synthesis of new precursors Ba(thd)₂(tmeea) and Sr(thd)₂(tmeea), where tmeea = tris[2-(2-methoxyethoxy)ethyl]amino, and LS-MOCVD of barium strontium titanate (BSTO) thin films using these precursors. Due to increased basicity of amines compared with ethers, it is expected that the nitrogen-donor ligand will make a strong bond to a metal than an analogous oxygen-donor ligand, consequently improving the volatility and thermal behavior of these precursors. Thin films of BSTO were grown on Pt(111)/SiO₂/Si(100) substrates by LS-MOCVD using a cocktail source consisting of the conventional Ti precursor Ti(thd)₂(O/sup i/Pr), and these new Ba and Sr precursors. As-grown films were characterized by XPS, SEM, XRD, XRF, and C-V and I-V measurements. BSTO films grown at 420℃ were stoichiometric barium strontium titanate with very smooth surface morphology and their dielectric constants were found to be as targe as 450. Dependence of the composition, microstructure and the electrical properties of the BSTO films on the growth temperature, annealing temperature, working pressure, and the composition of the cocktail source will be discussed.

• Journal of the Mineralogical Society of Korea
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• v.13 no.4
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• pp.171-185
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• 2000

Siliceous mudstones are embedded on a large scale in the Tertiary formations of Pohang area. Some useful zeolites such as NsP, (Na, TMA)P, analcime and hydroxysodalite were synthesized from the siliceous mudstones by treating with the variety of solution, i.e ., NaOH, NaOH+NaCl, NaOH, NaOH+$NaAlO_2$and NaOH+TMAOH at the low-temperature hydrothermal system ranging 60~12$0^{\circ}C$. Major precursor of zeolites is found as opal-CT in the zeolite-forming reaction. Smectite, which is included in considerable amounts in the mudstone, appears to play a major role of Al-source in the zeolite synthesis. In comparison, chalcedonic quartz and mica are rather insoluble in alkaline solution, and thus, these are observed as major impurities in the reaction products. An addition of $NaAlO_2$to NaOH solution is effective for eliminating these impurities in the reaction procedure, through these are partly dissolved when elevating the reaction temperature, concentration, and time. Phase change from NaP to hydroxysodalite takes place at the NaOH concentrations of 3.0~4.0 M, and the reaction is not sensitive to the temperature shift. NaP is more stable at lower NaOH concentration and higher activity of $Na_{+}$ whereas analcime is sensitive to the temperature change and stable at higher than $100^{\circ}C$ and 2.0~4.0 M in NaOH concentration. For the pure NaP synthesis without any other products, the treatment of mudstones with 1:1 solution of NaOH and $NaAlO _2$ turns out to be quite effective. NaP was successfully synthesized together with analcime at $100^{\circ}C$ as well as lower concentrations of NaOH+NaCl solution. In addition, the organic type, (Na, TMA)P was formed together with smectite in the 1:1 solution of NaOH and TMAOH.

• Journal of Powder Materials
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• v.27 no.3
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• pp.233-240
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• 2020

Nano-sized ZnSe particles are successfully synthesized in an aqueous solution at room temperature using sodium borohydride (NaBH₄) and thioglycolic acid (TGA) as the reducing agent and stabilizer, respectively. The effects of the mass ratio of the reducing agent to Se, stabilizer concentration, and stirring time on the synthesis of the ZnSe nanoparticles are evaluated. The light absorption/emission properties of the synthesized nanoparticles are characterized using ultraviolet-visible (UV-vis) spectroscopy, photoluminescence (PL) spectroscopy, and particle size analyzer (PSA) techniques. At least one mass ratio (NaBH4/Se) of the reducing agent should be added to produce ZnSe nanoparticles finer than 10 nm and to absorb UV-vis light shorter than the ZnSe bulk absorption wavelength of 460 nm. As the ratio of the reducing agent increases, the absorption wavelengths in the UV-vis curves are blue-shifted. Stirring in the atmosphere acts as a deterrent to the reduction reaction and formation of nanoparticles, but if not stirred in the atmosphere, the result is on par with synthesis in a nitrogen atmosphere. The stabilizer, TGA, has an impact on the Zn precursor synthesis. The fabricated nanoparticles exhibit excellent photo-absorption/discharge characteristics, suggesting that ZnSe nanoparticles can be alloyed without the need for organic solutions or high-temperature environments.

• Journal of the Korean Electrochemical Society
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• v.3 no.3
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• pp.173-177
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• 2000

The synthetic carbon was coated with tin oxide and copper by fluidized-bed chemical vapor deposition method. $(CH_3)_4Sn\;and\;Cu(hfac)_{2s}$ were employed as the metallic organic precursor, respectively. The modified synthetic carbons were used for lithium secondary battery anode to investigate their coating effects on electrochemical characteristics as alternative anode materials for lithium secondary batteries. The electrode which prepared by the synthetic carbons(MCMB) coated with tin oxide gave the higher capacity than that of raw material. Their capacity decreased with the progress of cycling possibly due to severe volume changes. But the cyclability was improved by coating with copper on the surface of the tin oxide coated carbon, which plays an important role as an inactive matrix buffering volume changes.

• Journal of the Korean Ceramic Society
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• v.35 no.6
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• pp.543-550
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• 1998

A process for the preparation of spherical tungsten oxide powders by the emulsion evaporation method was developed. The characteristics of the powders thus prepared were examined by means of TGA X-ray diffraction SEM and image analysis. The emulsion was prepared by fast mixing of tungsten containing aque-ous phase and the organic phase which contained kerosene surfactant and paraffin oil. The precursor was made by evaporating the emulsion in the kerosene bath at $160^{\circ}C$ and then calcined at $650^{\circ}C$ in order to pro-duce tungsten oxide powders. The average particle size of the tungsten oxide powders was $0.5\;\mu\textrm{m}$ and their shapes were spherical. Water-in-oil type emulsion wasmore advantageous to make less agglmerated. $W_{3}$ powders than the oil-in-water type emulsion for the emulsion evaporation experiments. As the HLB value of the surfactant increased and the concentration of tungsten ions in the aqueous phase decreased the mean particle size of tungsten oxide powders decreased whereas agglomeration increased. The optimum con-centration of Span 80 was 8 percent by volume and the optimum stirring speed in the emulsion formation was 5000 rpm in order to obtain find less agglomerated $W_{3}$ powders.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.8
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• pp.581-586
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• 1998

This paper describes athermally stimulated displacement current (TSDC) of arachidic acid(AA) and polyamic acid alkylamine salts(PAAS) Langmuir-Blodgett(LB) films, which is a precursor of polyimide(PI). The TSDC measurements of AA LB film were performed from temperature to about 11$0^{\circ}C$ at a rate of 0.2$^{\circ}C$/ｓ inside a vacuum chamber for a reference. And the TSDC measurements PAAS LB film were performed from room temperature to about 25$0^{\circ}C$ and temperature was increased at the same rate as that of AA LB film. They show that there are TSDC peaks at about 7$0^{\circ}C$ in the arachidic acid LB films, and at about 7$0^{\circ}C$ and 16$0^{\circ}C$ in the PAAs LB films. Results of these measurements indicate the one small peak at 7$0^{\circ}C$ is resulted from a softening of the alkyl group and the large peak at 16$0^{\circ}C$ is possibly due to dipole of C-O group in the PASS molecule. We have calculated the vertical component of the AA and PAAs L film out of the TSDC curves. It shows that the dipole moment of the AA LB film is about 70-mD at 7$0^{\circ}C$. And the dipole moment of PAAS LB film is about 040mD at 7$0^{\circ}C$ and about 200mD at 16$0^{\circ}C$ in the first measurement of TSDC. In the second measurement of TSDC of PASS LB film after cooling down to room temperature, the TSDC peaks are almost disappeared.

• Journal of the Korean Vacuum Society
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• v.17 no.4
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• pp.341-345
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• 2008

The SiOC film of carbon centered system was prepared using bistrimethylsilylmethane and oxygen mixed precursor by the chemical vapor deposition. The chemical properties of the SiOC film were analyzed by the contact anlge and FTIR spectra. The dielectric constant of the deposited films decreased after annealing process, and the correlation between the increasing the BTMSM/$O_2$ flow rate ratio and the dielectric constant did not exist. However, the trend of increasing or decreasing of the dielectric constant repeated and there is the correlation ship between the dielectric constant and the Si-O-C bond in the range of $950{\sim}1200\;cm^{-1}$. The dielectric constant decreased between samples with the chemical shift. The lowest dielectric constant was 1.65 at the sample, which was observed the chemical shift.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.1 no.1
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• pp.37-42
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• 2000

Copper thin films have been prepared by a metal organic chemical vapor deposition (MOCVD) technology on polyimide and TiN substrates. The Cu-MOCVD technology has advantages of the high deposition rate and the good step coverage compared with the conventional physical vapor deposition (PVD) technology in several industrial applications. The Cu films have been deposited with varying the experimental conditions of substrate temperatures and copper source vapor pressures. The films were annealed in a vacuum condition after the deposition, and the annealing effect on the electrical properties of the films was measured. The crystallinity and the microstructures of the films were observed by scanning electron microscopy (SEM), and the electrical resistivity was measured by 4-point probe. In the case of the Cu deposition on TiN substrate, the best electrical property of the films was measured for the samples prepared at 18$0^{\circ}C$. Very high deposition rate of the Cu film up to 250 nm/min was obtained on the polyimide substrate when the mixture of liquid and vapour precursor was used.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07a
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• pp.74-77
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• 2004

[ $HfO_2$ ] dielectric layers were grown on the p-type Si(100) substrate by metalorganic molecular beam epitaxy(MOMBE). Hafnium $t-butoxide[Hf(O{\cdot}t-C_4H_9)_4]$ was used as a Hf precursor and Argon gas was used as a carrier gas. The thickness of the layers was measured by scanning electron microscopy (SEM) and high-resolution transmission electron measurement(HR-TEM). The properties of the $HfO_2$ layers were evaluated by X-ray diffraction(XRD), high frequency capacitance-voltage measurement(HF C-V), current-voltage measurement(I-V), and atomic force measurement(AFM). HF C-V measurements have shown that $HfO_2$ layer grown by MOMBE has a high dielectric constant(k=19-21). The properties of $HfO_2$ films are affected by various process variables such as substrate temperature, bubbler temperature, Ar, and $O_2$ gas flows. In this paper, we examined the relationship between the $O_2/Ar$ gas ratio and the electrical properties of $HfO_2$.