• 제목/요약/키워드: Organic light-emitting diodes(OLEDs)

검색결과 350건 처리시간 0.026초

플라즈마 조건 변화에 따른 ITO 특성 분석 및 유기발광소자의 제작에 관한 연구 (A Study on the Characteristic Analysis of ITO and the Fabrication of Organic Light Emitting Diodes by Variation of Plasma Condition)

  • 김중연;강성종;조재영;김태구;오환술
    • 한국전기전자재료학회논문지
    • /
    • 제18권10호
    • /
    • pp.941-944
    • /
    • 2005
  • In this experiment, OLEDs(Organic Light Emitting Diodes) was fabricated to confirm effect of Plasma treatment which increase the hole injection characteristic from anode. Device structure was $ITO/2-TNATA/{\alpha}-NPD/DPVBi/BAlq/Alq_3/Al:Li$. We used DPVBi (4, 4 - Bis (2,2-diphenylethen-1-yls) - Biphenyl) as a blue emitting material. To optimize the process condition of plasma treatment, we used 2 gases of the oxygen and nitrogen gas under 120 mTorr with 100 W, 200 W, and 400 W plasma power. The current efficiency of $N_2$ plasma is more efficient than that of $O_2$ plasma. At $1000 cd/m^2$, we obtained the maximum current efficiency of 6.45 cd/A using $N_2$ gas with 200 W plasma power.

ITO/Buffer layer/TPD/$Alq_3$/Al 구조의 유기 발광 소자에서 온도 변화에 따른 전기적 특성 연구 (Temperature-dependent Electrical Properties in organic light-emitting diodes of ITO/Buffer layer/TPD/$Alq_3$/Al structure)

  • 정동회;김상걸;오현석;홍진웅;이준웅;김태완
    • 한국전기전자재료학회:학술대회논문집
    • /
    • 한국전기전자재료학회 2002년도 추계학술대회 논문집 Vol.15
    • /
    • pp.534-537
    • /
    • 2002
  • We have studied conduction mechanism that is interpreted in terms of space charge limited current (SCLC) region and tunneling region. The OLEDs are based on the molecular compounds, N,N'-diphenyl-N,N'-bis(3-methylphenyl)-1,1'-biphenyl-4,4'-diamine (TPD) as a hole transport, tris (8- hydroxyquinolinoline) aluminum(III) $(Alq_3)$ as an electron injection and transport and emitting later, copper phthalocyanine (CuPc) and poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) and poly(vinylcarbazole) (PVK) as a buffer layer respectively. Al was used as cathode. We manufactured reference structure that has in ITO/TPD/$Alq_3$/Al. Buffer layer effects were compared to reference structure. And we have analyzed out luminance efficiency-voltage characteristics in ITO/Buffer layer/TPD/$Alq_3$/Al with buffer-layer materials.

  • PDF

BCP 두께가 청잭 인광 OLED의 전기 및 광학적 특성에 미치는 영향 (Effects of BCP Thickness on the Electrical and Optical Characteristics of Blue Phosphorescent Organic Light Emitting Diodes)

  • 서유석;문대규
    • 한국전기전자재료학회논문지
    • /
    • 제22권9호
    • /
    • pp.781-785
    • /
    • 2009
  • We have fabricated simple triple-layer blue-emitting phosphorescent organic light emitting diodes (OLEDs) using different thicknesses (25 and 55 nm) of 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP) electron transport layers. 1,1-bis[4-bis (4-methylphenyl)- aminophenyllcyclohexane (TAPC), bis[(4,6-di-fluorophenyl)-pyridinate-$N,C^{2'}$]picolinate (FIrpic) and N,N' -dicarbazolyl-3,5-benzene (mCP) were used as hole transport, blue guest and host materials, respectively. The driving voltage, electroluminescence (EL) efficiency and emission characteristics of devices were investigated. The maximum EL efficiency was 20 cd/A in the device with 55 nm BCP layer, which efficiency was about 33% higher than the device with 25 nm BCP layer. The higher efficiency in the 55 nm BCP device resulted from the enhanced electron-hole balance. In the EL spectrum of blue phosphorescent OLED with BCP layer, the relative intensity between 470 and 500 nm peaks was related to the location of emission zone.

등가 회로 모델을 이용한 다층 유기발광 소자의 특성 분석 (Property analysis of multi layer Organic Light Emitting Diodes using equivalent circuit models)

  • 박형준;김현민;이준신;남은경;정동근
    • 대한전기학회:학술대회논문집
    • /
    • 대한전기학회 2006년도 추계학술대회 논문집 전기물성,응용부문
    • /
    • pp.119-120
    • /
    • 2006
  • The impedance spectroscopy is one of the effective ways to understand the electrical properties of organic light emitting diodes. The frequency-dependant properties of small molecule based OLEDs have been studied. The equivalent circuit of single-layer device is composed of contact resistance ($R_c$), bulk resistance ($R_p$) and bulk capacitance ($C_p$). The equivalent circuit of double layer device is composed of two parallel circuits connected in series, each of which is a parallel resistor and a capacitor. We have fabricated a double layer device indium-rio-oxide (ITO, anode), N,NV -diphenyl- N,NV -bis(3-methylphenyI)-1,1V -diphenyl-4,4V-diamine (TPD, hole-transporting layer), tris-(8-hydroxyquinoline) aluminum (Alq3, emitting layer), and aluminum (AI, cathode) and two single layer devices ([TO/ Alq3/ AI, ITO/TPD/AI).

  • PDF

Zn-complexes를 이용한 White OLED의 효율 향상 관한 연구 (Improvements of Efficiency in White OLED using Zn-complexes)

  • 김동은;최규채;권영수
    • 대한전기학회:학술대회논문집
    • /
    • 대한전기학회 2008년도 Techno-Fair 및 합동춘계학술대회 논문집 전기물성,응용부문
    • /
    • pp.167-168
    • /
    • 2008
  • Organic light emitting diodes (OLEDs) show a lot of advantages for display purposes. Because OLEDs provide white light emission with a high efficiency and stability, it is desirable to apply OLEDs as an illumination light source and back light in LCD displays. We synthesized new emissive materials, namely $Zn(HPB)_2$ and Zn(HPB)q, which have a low molecular compound and thermal stability. We studied white OLEDs using $Zn(HPB)_2$ and $Zn(PQ)_2$. The fundamental structures of the white OLEDs were ITO / NPB (40 nm) / $Zn(HPB)_2$ (40 nm) / $Zn(PQ)_2$ (20 nm) / LiAl (120 nm). As a result, we obtained a maximum luminance of $4200cd/m^2$ at a current density of $440mA/cm^2$. The CIE (Commission International de l'Eclairage) coordinates are (0.319, 0.338) at an applied voltage of 10 V.

  • PDF

$Zn(HPB)_2$와 Zn(HPB)q를 이용한 White OLED의 색순도 향상에 관한 연구 (Improvements of Color Purity in White OLED using $Zn(HPB)_2$ and Zn(HPB)q)

  • 장수현;백선진;최규채;이학대;권영수
    • 대한전기학회:학술대회논문집
    • /
    • 대한전기학회 2007년도 제38회 하계학술대회
    • /
    • pp.2018-2019
    • /
    • 2007
  • Organic light emitting diodes (OLEDs) show a lot of advantages for display purposes. Because OLEDs provide white light emission with a high efficiency and stability, it is desirable to apply OLEDs as an illumination light source and back light in LCD displays. We synthesized new emissive materials, namely $Zn(HPB)_2$ and Zn(HPB)q, which have a low molecular compound and thermal stability. We studied white OLEDs using $Zn(HPB)_2$ and Zn(HPB)q. The fundamental structures of the white OLEDs were ITO / NPB (40 nm) / $Zn(HPB)_2$ (40 nm) / Zn(HPB)q (20 nm) / LiAl (120nm). As a result, we obtained a maximum luminance of $15325cd/m^2$ at a current density of $997\;mA/cm^2$. The CIE (Commission International de l'Eclairage) coordinates are (0.28, 0.35) at an applied voltage of 9.75 V.

  • PDF

Biphenyl 구조를 가진 새로운 청색 유기 발광 재료의 합성 및 EL효율과 이동도의 관계에 대한 연구 (Synthesis of New Blue OLEDs with Biphenyl Structure and Relationship between EL Efficiency and Drift Mobility)

  • 이태훈;류정이;김태훈;남장현;박성수;손세모
    • 한국인쇄학회지
    • /
    • 제22권2호
    • /
    • pp.179-198
    • /
    • 2004
  • Organic electroluminescent devices are light-emitting diodes in which the active materials consist entirely of organic materials. Recently, many fluorescent organic materials have been reported and the study on synthesis and application of new organic light-emitting materials has been demanded. This paper reports the optical and electrical characteristics of OLEDs using novel polymers containing biphenyl structure. First, Optical properties of novel light-emitting biphenyl derivatives doped with poly(9-vinyl carbazole)(PVK) and emitted blue, bluish green color, which is attributed to the overlap area between PL spectrum of host(PVK) and absorption spectra of guests(polymer). This is correspondent with F$\"{o}$rster energy transfer process in the blends. And, OLED devices were fabricated using poly (3,4-ethylenedioxy thiophene) (PEDOT) as a hole injection material and tris-(8-hydroxyquinoline) aluminum ($Alq_3$) as an electron transporting material. EL devices fabricated as ITO/PEDOT/PVK doped with biphenyl derivatives/$Alq_3$/Li:Al and I-V-L chatacteristics and emitting efficiency of EL devices were examined. Finally, the drift mobility of PVK doped with biphenyl derivatives and $Alq_3$ were measured by TOF technique varying applied electric field. EL efficiency was increased as the ratio of hole mobility of PVK doped with biphenyl derivatives and electron mobility of $Alq_3$ was close to one.

  • PDF

Fluorescent White OLEDs with a High Color-rendering Index Using a Silicon-Cored Anthracene Derivative as a Blue Host

  • Kwak, Jeong-Hun;Lyu, Yi-Yeol;Lee, Hyun-Koo;Char, Kook-Heon;Lee, Chang-Hee
    • Journal of Information Display
    • /
    • 제11권3호
    • /
    • pp.123-127
    • /
    • 2010
  • Fluorescent white organic light-emitting diodes showing high color-rendering indices (CRIs) of up to 81 was demonstrated, with a silicon-cored anthracene derivative (PATSPA) doped with DPAVBi utilized as the deep-blue host and dye materials, and the commercial dyes rubrene and DCM2 utilized as the orange- and red-light-emitting dyes. The devices, consisting of three emissive layers, showed bright-white-light emission, but the ratio of the blue peak to the orange and red peaks changed with the current density and the thickness of the blue emissive layer. A high CRI was achieved with the use of a deep-blue emitter doped in a novel host and by optimizing the blue-layer thickness. The device with a blue-layer thickness of 10 nm showed the Commission Internationale de l'Eclairage (CIE) color coordinate of (0.33, 0.35), a high CRI of 81, and a moderate external quantum efficiency of 2% at a current density of $2.5\;mA/cm^2$.

Effects of Doping in Organic Electroluminescent Devices Doped with a Fluorescent Dye

  • Kang, Gi-Wook;Ahn, Young-Joo;Lee, Chang-Hee
    • Journal of Information Display
    • /
    • 제2권3호
    • /
    • pp.1-5
    • /
    • 2001
  • The effect of doping on the energy transfer and charge carrier trapping processes has been studied in organic light-emitting diodes (OLEDs) doped with a fluorescent laser dye. The devices consisted of N,N'-diphenyl-N,N'-bis(3-methylphenyl)-1,1-biphenyl-4,4'-diamine (TPD) as a hole transporting layer, tris(8-hydroxyquinoline) aluminum ($Alq_3$) as the host, and a fluorescent dye, 4-dicyanomethylene-2-methyl-6-[2-(2,3,6,7-tetrahydro-1 H,5H-benzo[i,j]quinolizin-8-yl) vinyl]-4H-pyran) (DCM2) as the dopant. Temperature dependence of the current-voltage-luminescence (I-V-L) characteristics, the electroluminescence (EL) and photoluminescence (PL) spectra are studied in the temperature ranging between 15 K and 300 K. The emission from DCM2 was seen to be much stronger compared with the emission from $Alq_3$, indicative of efficient energy transfer from $Alq_3$ to DCM2. In addition, the EL emission from DCM2 increasd with increasing temperature while the emission from the host $Alq_3$ decreased. The result indicates that direct charge carrier trapping becomes efficient with increasing temperature. The EL emission from DCM2 shows a slightly sublinear dependence on the current density, implying the enhanced quenching of excitons at high current densities due to the exciton-exciton annihilation.

  • PDF

$CF_4$ 플라즈마 처리된 ITO박막을 이용한 유기 EL 소자의 성능향상에 관한 임피던스 분석 (Impedance spectroscopy analysis of organic light emitting diodes with the $CF_4$ anode plasma treatment)

  • 박형준;김현민;이준신;손선영;정동근
    • 한국전기전자재료학회:학술대회논문집
    • /
    • 한국전기전자재료학회 2006년도 추계학술대회 논문집 Vol.19
    • /
    • pp.320-321
    • /
    • 2006
  • In this work, impedance Spectroscopic analysis was applied to study the effect of plasma treatment on the surface of indium-tin oxide (ITO) anodes using $CF_4g$ as and to model the equivalent circuit for organic light emitting diodes (OLEDs) with the $CF_4$ plasma treatment of ITO surface at the anodes. This device with ITO/TPD/$Alq_3$/LiF/Al structure can be modeled as a simple combination of a resistor and a capacitor. The $CF_4$ plasma treatment on the surface of ITO shifts the vacuum level of the ITO as a result of which the barrier height for hole injection at the ITO/organic interface is reduced. The Impedance spectroscopy measurement of the devices with the $CF_4$ plasma treatment on the surface of ITO anodes shows change of values in parallel resistance ($R_p$) and parallel capacitance ($C_p$).

  • PDF