• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.283-283
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• 2011

The n-doping effect by doping metal carbonate into an electron-injecting organic layer can improve the device performance by the balanced carrier injection because an electron ohmic contact between cathode and an electron-transporting layer, for example, a high current density, a high efficiency, a high luminance, and a low power consumption. In the study, first, we investigated an electron-ohmic property of electron-only device, which has a ITO/$Rb_2CO_3$-doped $C_{60}$/Al structure. Second, we examined the I-V-L characteristics of all-ohmic OLEDs, which are glass/ITO/$MoO_x$-doped NPB (25%, 5 nm)/NPB (63 nm)/$Alq_3$ (32 nm)/$Rb_2CO_3$-doped $C_{60}$(y%, 10 nm)/Al. The $MoO_x$doped NPB and $Rb_2CO_3$-doped fullerene layer were used as the hole-ohmic contact and electron-ohmic contact layer in all-ohmic OLEDs, respectively, Third, the electronic structure of the $Rb_2CO_3$-doped $C_{60}$-doped interfaces were investigated by analyzing photoemission properties, such as x-ray photoemission spectroscopy (XPS), Ultraviolet Photoemission spectroscopy (UPS), and Near-edge x-ray absorption fine structure (NEXAFS) spectroscopy, as a doping concentration at the interfaces of $Rb_2CO_3$-doped fullerene are changed. Finally, the correlation between the device performance in all ohmic devices and the interfacial property of the $Rb_2CO_3$-doped $C_{60}$ thin film was discussed with an energy band diagram.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2011년도 제42회 하계학술대회
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• pp.1438-1439
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• 2011

In this paper, we studied effects on the efficiency, according to thickness of the electron injection layer(EIL) for improving efficiency of Organic Light Emitting Diodes(OLEDs). For the first time, after confirming the optimum thickness of the EIL material $Cs_2CO_3$, we designed OLED devices having a structure of ITO/TPD/$Alq_3/Cs_2CO_3$/Al. And we manufactured devices applying for the optimum thickness of the material in the simulation with thermal evaporating method. And we investigated how the EIL material $Cs_2CO_3$ effects on efficiency of OLEDs in the EIL. As the result, because the EIL material $Cs_2CO_3$ reduces energy potential barrier of the EIL, it facilitated the electron transfer. And, as blocking the hole transfer contributes to an increased recombination, we confirmed that the efficiency of OLEDs increased. And compared to the device without using the EIL material, the device using thickness 1.0 nm of $Cs_2CO_3$ in the EIL shows the excellent efficiency. Therefore, we confirmed that the luminance and the external quantum efficiency increase about 600% and 500% respectively.

• 한국응용과학기술학회지
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• 제17권3호
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• pp.174-177
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• 2000

The effect of a-sexithiophene(${\alpha}-6T$) layers on the light emitting diode (LED) were studied. The ${\alpha}-6T$ was used for a buffer layer in electroluminescent (EL) devices. Enhanced carrier (hole) injection and improved emission efficiency were observed. Carrier injection characteristics were investigated as a function of ${\alpha}-6T$ later thickness. The efficiency of the electroluminescence was proportional to the thickness of ${\alpha}-6T$ layer. The highest efficiency was observed 600A of ${\alpha}-6T$ later, which was about 1.5 times higher than that of device without ${\alpha}-6T$ later. The device with a-6T showed an operation voltage lowered by 2V. The ${\alpha}-6T$ layer can substitute hole blocking layer, and control charge injection properties.

• Bulletin of the Korean Chemical Society
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• 제34권8호
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• pp.2267-2270
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• 2013

A series of blue fluorescent emitters based on triphenylene derivatives were synthesized via the Diels-Alder reaction in moderate yields. The electronic absorption and emission characteristics of the new functional materials were affected by the nature of the substituent on the triphenylene nucleus. Multilayered OLEDs were fabricated with a device structure of: ITO/NPB (50 nm)/EML (30 nm)/Bphen (30 nm)/Liq (2.0 nm)/Al (100 nm). All devices showed efficient blue emissions. Among those, a device using 1 gives the best performances with a high brightness (978 cd $m^{-2}$ at 8.0 V) and high efficiencies (a luminous efficiency of 0.80 cd/A, a power efficiency of 0.34 lm/W and an external quantum efficiency of 0.73% at 20 $mA/cm^2$). The peak wavelength of the electroluminescence was 455 nm with CIEx,y coordinates of (0.17, 0.14) at 8.0 V.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2006년도 제37회 하계학술대회 논문집 C
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• pp.1359-1360
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• 2006

lTO(Indium-Tin-Oxide) was used as anode material for OLED. Characteristics of ITO have great effect on efficiency of OLEDS(Organic light emitting diodes). ITO surface was treated by Nd:YAG laser in order to improve its chemical properties, wettability, adhesive property and to remove the surface contaminants while maintaining its original function. In this study, main purpose was to improve the efficiency of OLEDs by the ITO surface treatment: ITO surface was treated using a Nd:YAG(${\lambda}=266nm$, pulse) with a fixed power of 0.06[w] and various stage scanning velocities. Surface morphology of the ITO was investigated by AFM. Test OLEDs with surface treated ITO were fabricated by deposition of TPD (HTL), Ald3 (ETL/TML) and Al (cathode) thin films. Device performance of the OLEDs such as V-I-L was investigated using Source Measurement Unit (SMU: Keithly. Model 2400) and Luminance Measurement (TOPCON. BM-8).

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 학술대회 및 기술세미나 논문집 디스플레이 광소자
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• pp.54-55
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• 2006

Organic light-emitting diodes(OLEOs) are attractive because of possible application in display with low operating voltage, low power consumption, self-emission and capability of multicolor emission by the selection of emissive material. We investigated the effects of deposition rate on the electrical characteristics, physical characteristics and optical characteristics of OLEOs in the ITO(indium-tin-oxide)/N.N'-diphenyl-N,N'-bis(3-methyphenyl)-1,1'-biphenyl-4,4'-diamine(TPD)/tris(8-hydroxyquinoline)aluminum($Alq_3$)/Al device. We measured current density, luminous flux and luminance characteristics of devices with varying deposition rates of TPD and $Alq_3$. It has been found that optimal deposition rate of TPD and $Alq_3$ were respectively $1.5{\AA}/s$ from the device structure. An AFM measurement results, surface roughness of the deposited film was the lowest when deposition rate was $1.5{\AA}/s$.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1999년도 하계학술대회 논문집 D
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• pp.1735-1737
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• 1999

In this study, several lanthanide complexes such as Eu$(TTA)_3$(Phen). Tb$(ACAC)_3$(Cl-Phen) were synthesized and the white-light electroluminescence (EL) characteristics of their thin films were investigated. where the devices having structures of anode/TPD/Tb$(ACAC)_3$(Cl-Phen)/Eu$(TTA)_3$(Phen)/$Alq_3$ or $Bebq_2$/ cathode and the low work function metal alloy such as Li:Al was used as the electron injecting electrode (cathode). Details on the white-light-emitting characteristics of these device structures were explained by the energy band diagrams of various materials used in these structures, where the energy levels of new materials such as ionization potential (IP) and electron affinity (EA) were measured by cyclic voltametric method.

• 마이크로전자및패키징학회지
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• 제14권4호
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• pp.37-42
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• 2007

본 연구에서는 ITO/PEDOT:PSS/PFO:MEH-PPV/LiF/Al의 구조를 갖는 고분자 유기발광다이오드를 제작하여 정공 주입층으로 사용되는 PEDOT:PSS의 두께 변화와 PVK 정공 수송층을 도입하여 ITO/PEDOT:PSS/PVK/PFO:MEH-PPV/LiF/Al 구조를 갖는 고분자 유기발광 다이오드를 제작하여 정공수송층이 유기발광다이오드의 전기 광학적 특성에 미치는 영향에 대하여 조사, 비교하였다. 실험에 사용된 모든 유기물은 플라즈마 처리된 ITO/glass 기판위에 스핀 코팅법으로 도포하였다. 정공 주입층인 PEDOT:PSS 두께를 약 80 nm에서 50 nm로 감소한 경우 PLED 소자의 휘도는 약 $220cd/m^2$ 에서 $450cd/m^2$으로 크게 증가하였다. 이러한 결과는 정공 주입층의 두께가 감소할수록 ITO 전극에서 발생한 정공이 보다 쉽게 발광막으로 전달되기 때문이다. 또한 PVK 정공 수송층을 도입한 PLED소자에서 최대 전류밀도와 휘도는 $268mA/cm^2$ 와 $540cd/m^2$ (at 12V)의 값을 각각 나타내었다. PVK 정공 수송층이 도입되지 않은 소자에 비해 전류밀도는 약 14%, 휘도는 약 22%의 특성개선을 나타내었다.

• 대한화학회지
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• 제54권3호
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• pp.291-294
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• 2010

본 연구에서는 다양한 농도의 BCzVBi를 청색 형광도판트, DPVBi를 청색 호스트 물질로 적용한 청색OLED 소자를 제작하였다. 최적화된 고효율 청색 OLED 소자의 적층 구조는 NPB (500 ${\AA}$)/DPVBi:BCzVBi-6%(150 ${\AA}$)/$Alq_3$(300 ${\AA}$)/Liq(20 ${\AA}$)/Al (1000 ${\AA}$)으로 구성되었다. 청색 OLED의 최대휘도는 구동전압 13.8V에서13200 cd/$m^2$이고 전류밀도 및 최대효율은 각각 1000 cd/$m^2$의 휘도에서 26.4 mA/$cm^2$, 구동전압 3.9 V에서 4.24 cd/A 이었다. 도핑된 청색 OLED 소자의 발광효율은 도핑되지 않은 소자의 2배에 이른 반면 색좌표는 (0.16, 0.19)로 서로 비슷하였다. BCzVBi가 6% 도핑된 청색 OLED 445 nm와 470 nm에 2개의 EL 스펙트럼의 Peak이 존재하는 반면 도핑되지 않은 순수한 DPVBi 청색OLED 소자는 456 nm에서의 유일한 Peak만을 보여주고 있다. 이는 호스트 물질인 DPVBi의 LUMO와 도판트 물질인 BCzVBI의 LUMO 사이에 분자 진동에 의한 페르스터 에너지 전이에 기인한 것이다.

• 한국진공학회지
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• 제19권3호
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• pp.184-189
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• 2010

두 가지의 형광도판트를 이용하여 제작된 단일 발광층 유기발광다이오드(OLEDs)는 ITO / NPB ($700{\AA}$) / MADN : C545T - 1.0% : DCJTB - 0.3% ($300{\AA}$) / Bphen ($300{\AA}$>) / LiF ($10{\AA}$) / Al ($1,000{\AA}$)으로 구성되었다. C545T와 DCJTB는 각각 녹색과 적색 도판트로 사용되었고, 호스트 물질인 MADN에 대해서 각각 다른 농도로 도핑하였다. 이러한 두 가지 형광도 판트를 사용한 제적화된 OLED는 8.42 cd/A의 효율과 6 V에서 $3169 cd/m^2$의 발광 휘도와 (0.43, 0.50)의 색좌표를 가졌다. 이러한 OLED 구조의 electroluminescence는 각각 C545T와 DCJTB에 따라 500 nm와 564 nm의 피크를 가졌다. 이러한 결과는 MADN에서 C545T로 C545T에서 DCJTB로 포스터 에너지 전이가 일어났음을 설명할 수 있다.