• Proceedings of the KIEE Conference
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• 2009.04a
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• pp.33-36
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• 2009

In this paper, evaluation of physical properties was made for dielectric relaxation phenomena by the detection of the surface pressures and displacements current on the monolayer films of fatty acid monomolecular Arachidic Acid, Stearic Acid using compressing velocity. LB(Langmuir-Blodgett) thin films were manufacture by detecting deposition for the accumulation and the current was measured after the electric bias was applied across the manufactured MIM device. The physicochemical properties of the fatty acid monomolecular Arachidic Acid, Stearic Acid films surface structure has been studied by AFM. We give pressure stimulation into organic thin films and then manufacture a device under the accumulation condition that the state surface pressure is gas state, liquid state, solid state. Formation that prevent when gas phase state and liquid phase state measure but could know organic matter that molecules form equal and stable film when molecules were not distributed evenly, and accumulated in solid state only.

• Journal of the Korean Applied Science and Technology
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• v.14 no.1
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• pp.89-93
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• 1997

In this research, ultra-thin films of organic charge transfer complex were deposited on to ordinary microscope slide-glass subtrates with a Langmuir-Blodgett technique. ${\pi}$-A isotherm characteristics of these complex were studied in order to find optimum conditions of deposition by varying temperature of subphase, compression speed, and spreading amount. Transfer ratio of these films were studied during the process of deposition. The UV-visible absorbance spectra of LB films were measured to find state of deposition by varing layer number. The observed optimum conditions of surface, pressure, spreading amount, and dipping speed for depositing LB films(Y-type) were 38m/Nm, $150{\mu}l$ and 5mm/min, respectively. Since the tansfer ratio is close to 100%, the monolayer on the subphase seems to be well transferred to the solid substrate. The thickness of the film was well-controlled as the UV-vis absorbance of films were changed linear according to the number of layers.

• Journal of the Semiconductor & Display Technology
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• v.4 no.3 s.12
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• pp.5-9
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• 2005

The bonding structure of organic materials such as fluorinated amorphous carbon films was classified into two types due to the chemical shifts. The electrical properties of fluorinated amorphous carbon films also showed very different effect of two types notwithstanding a very little difference. Fluorinated amorphous carbon films with the cross-link break-age structure existed large leakage current resulting from effect of the electron tunneling. Increasing the cation due to the electron-deficient group increased the barrier height of the films with the cross-link amorphous structure, therefore the electric characteristic of the final materials with low dielectric constant was also improved. The lowest dielectric constant is 2.3 at the sample with the cross-link amorphous structure.

• Korean Journal of Materials Research
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• v.17 no.4
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• pp.232-235
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• 2007

Indium tin oxide (ITO) films were deposited on polycarbonate CR39 substrate using DC magnetron sputtering. ITO thin films were deposited at room temperature because glass-transition temperature of CR39 substrate is $130^{circ}C$ ITO thin films are used as bottom and top electrodes and for organic thin film transparent transistor (OTFT). The electrodes electrical properties of ITO thin films and their optical transparency properties in the visible wavelength range (300-800 nm) strongly depend on the volume of oxygen percent. The optimum resistivity and transparency of ITO thin film electrode was achieved with a 75 W plasma power, 10 % volume of oxygen and a 27 nm/min deposition rate. Above 85% transparency in the visible wavelength range (300-800 nm) was measured without post annealing process, and resistivity as low as $9.83{\times}^{TM}10^{-4}{\Omega}$ cm was measured at thickness of 300 nm.

• Journal of Information Display
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• v.7 no.3
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• pp.13-18
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• 2006

Currently, the flexible organic light emitting devices (OLEDs) are investigated. They are very vulnerable to moisture, and thus have been found to show some problems. Thus, an effective barrier layer is needed to protect from moisture in air. We deposited thin films with magnesium oxide (MgO) and silicon oxide $(SiO_{2})$ compounds mixed at various mixture ratios on flexible polyether sulfone (PES) substrates by an electron-beam evaporator to investigate their applizability for transparent barrier applications. In this study, we found that as the MgO fraction increased, thin films comprised of MgO and $(SiO_{2})$ compounds became more amorphous and their surface morphologies become smoother and denser. In addition, zirconium oxide $(ZrO_{2})$ was added to the above-mentioned compound mixtures. $ZrO_{2}$ made thin mixture films more amorphous and made the surface morphology denser and more uniform. The water vapor transmission rates (WVTRs) of the whole films decreased rapidly. The best WVTR was obtained by depositing thin films of Mg-Si-Zr-O compound among the whole thin films. As the thin mixture films became more amorphous, and the surface morphology become denser and more uniform, the WVTRs decreased. Therefore, the thin mixture films became more suitable for flexible OLED applications as transparent passivation layers against moisture in air.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.4
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• pp.350-356
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• 2005

We report the space charge and the surface potential of the interface between metal and copper(Ⅱ)-phthalocyanine(CuPc) thin films by measuring the microwave reflection coefficients S/sub 11/ of thin films using a near-field scanning microwave microscope(NSMM). CuPc thin films were prepared on Au and Al thin films using a thermal evaporation method. Two kinds of CuPc thin films were prepared by different substrate heating conditions; one was deposited on preheated substrate at 150。C and the other was annealed after deposition. The microwave reflection coefficients S/sub 11/ of CuPc thin films were changed by the dependence on grain alignment due to heat treatment conditions and depended on thickness of CuPc thin films. Electrical conductivity of interface between metal and organic CuPc was changed by the space charge of the interface. By comparing reflection coefficient S/sub 11/ we observed the electrical conductivity changes of CuPc thin films by the changes of surface potential and space charge at the interface.

• Proceedings of the KIEE Conference
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• 1995.11a
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• pp.423-426
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• 1995

Langmuir-Blodgett technique offers a convenient and elegant way to organic conducting systems for ultra thin films. In conducting systems based on LB films, TCNQ derivatives have been extensively studied as electron acceptor molecules in a large number of organic conducting systems.[1] A very interesting UV-visible spectra of octadecylviologen-$(TCNQ^-)_2$ was obtained from a methylenechloride and acetonitrile mixture, and from Langmuir-Blodgett films. The ESR characteristics of octadecylviologen-$(TCNQ^-)_2$ were studied to understand conducting mechanism and structure of LB films. The ESR spectra infer that the N-dococylquinolinium-TCNQ LB films has anisotropic property. But octadecylviologen-$(TCNQ^-)_2$ does not show angular dependence. As the temperature increases from 350K to 450K, the ESR signal of LB films becomes sharp. Scanning calorimetry(DSC) of octadecylviologen-$(TCNQ^-)_2$ provides the endothermic reaction temperature of the films, 340K, which corresponds to the temperature, 365K, of the new ESR signal.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2003.05a
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• pp.53-53
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• 2003

Plasma polymerized organic thin films were deposited on Si(100) glass and metal substrates using thiophene and ethylcyclohexane precursors by PECVD method. In order to compare electrochemical properties of the as-grown thin films, the effects of the RF plasma power in the range of 30~100 W. AFM showed that the polymer films with smooth surface and sharp interface could be grown under various deposition conditions. Impedance analyzer was utilized for the determination of I-V curve for leakage current density and C-V for dielectric constants, respectively. To obtain C-V curve, we used a MIM structure of metal(Al)-insulator(plasma polymerized thin film)-metal(Pt) structure. Al as the electrode was evaporated on the thiophene films that grew on Pt coated silicon substrates, and the dielectric constants of the as-grown films were then calculated from C- V data measured at 1MHz. From the electrical property measurements such as I-V and C-V characteristics, the minimum dielectric constant and the best leakage current of thiophene thin films were obtained to be about 3.22 and $1{\;}{\times}10^{-11}{\;}A/cm^2$. However, in case of ethylcyclohexane thin films, the minimum dielectric constant and the best leakage current were obtained to be about 3.11 and $5{\;}{\times}10^{-12}{\;}A/cm^2$.

• Textile Coloration and Finishing
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• v.20 no.5
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• pp.23-27
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• 2008

In this work, poly(diallyldimethylammoniumchloride) (PDDAC) and meso-tetrakis(4-carboxyphenyl)porphyrin were considered to produce the self-assembly fabrication films. This method is based on the layer-by-layer (LbL) deposition produced by the electrostatic attraction between positively charged PDDAC and negatively charged porphyrin ions. The result of multilayer fabrication was discussed with the level of color strength (K/S). K/S spectra of the fabricated multilayer films showed gradual increase behaviors. In addition, the color photo images of the fabricated multilayer films showed that PDDAC and porphyrin were successfully attracted by electrostatic self-assembly forces.

• 한국정보디스플레이학회:학술대회논문집
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• 2003.07a
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• pp.998-1000
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• 2003

We have investigated thin film morphology of pentacene thin films by the process of low-pressure gas assisted organic vapor deposition (LP-GAOVD). Source temperature, inert gas flow rate, substrate temperature and deposition pressure during film deposition is used to vary the growth rate, thin film morphology and the crystalline grain size of pentacene thin films. The electrical properties of pentacene thin films for applications in organic thin film transistor and electrophoretic displays will be discussed.