• 제목/요약/키워드: Organic field-effect transistors (OFETs)

검색결과 48건 처리시간 0.028초

Electrical Properties of F16CuPC Single Layer FET and F16CuPc/CuPc Double Layer FET

  • Lee, Ho-Shik;Park, Yong-Pil;Cheon, Min-Woo
    • Transactions on Electrical and Electronic Materials
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    • 제8권4호
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    • pp.174-177
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    • 2007
  • We fabricated organic field-effect transistors (OFETs) based a fluorinated copper phthalocyanine ($F_{16}CuPC$) and copper phthalocyanine (CuPc) as an active layer. And we observed the surface morphology of the $F_{16}CuPC$ thin film. The $F_{16}CuPC$ thin film thickness was 40 nm, and the channel length was $50{\mu}m$, channel width was 3 mm. And we also fabricated the $F_{16}CuPc/CuPc$ double layer FET and with different $F_{16}CuPc$ film thickness devices. We observed the typical current-voltage (I-V) characteristics and capacitance-voltage (C-V) in $F_{16}CuPc$ FET and we calculated the effective mobility. From the double layer FET devices, we observed the higher drain current more than single layer FET devices.

Flexible E-Paper Displays Using Low-Temperature Process and Printed Organic Transistor Arrays

  • Jin, Yong-Wan;Kim, Joo-Young;Koo, Bon-Won;Song, Byong-Gwon;Kim, Jung-Woo;Kim, Do-Hwan;Yoo, Byung-Wook;Lee, Ji-Youl;Chun, Young-Tea;Lee, Bang-Lin;Jung, Myung-Sup;Park, Jeong-Il;Lee, Sang-Yoon
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
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    • pp.431-433
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    • 2009
  • We developed 4.8 inch WQVGA e-paper on plastic substrate using organic field effect transistors (OFETs). Polyethylene naphthalate (PEN) film was used as a flexible substrate and arrays of OFETs with bottom-gate, bottom-contact structure were fabricated on it. Lowtemperature curable organic gate insulating materials were employed and polymer semiconductor solutions were ink-jetted on arrays with high-resolution. At all steps, process temperature was limited below $130^{\circ}C$. Finally, we could drive flexible e-paper displays based on OFET arrays with the resolution of 100 dpi.

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Compact Disc를 마스터 몰드로 사용하는 저비용의 OFET용 유기반도체 소프트 리소그래피 (Cost-Effective Soft Lithography of Organic Semiconductors in OFETs with Compact Discs as Master Molds)

  • 박세진;김혁진;안태규
    • 접착 및 계면
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    • 제23권4호
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    • pp.116-121
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    • 2022
  • Organic field-effect transistor가 실제 전자 장치에 쓰이기 위해서는 유기반도체 용액공정용 미세 패터닝 기술이 요구된다. 본 연구에서는 기존의 스핀 코팅 방법보다 미세 패턴을 형성할 수 있는 소프트 리소그래피 방법이 더 우수한 전기적 특성을 가질 수 있다는 것을 확인하기 위해 비교 분석하였다. Compact Disc 표면의 나노 패턴을 이용하여 유연한 마스터 몰드를 제작하였고, 650 nm 폭의 2,7-Dioctyl [1] benzothieno [3,2-b] [1] benzo thiophene (C8-BTBT) 나노 와이어를 얻었다. 그 결과 소프트 리소그래피 방법을 이용해 제작된 소자 이동도는 0.086 cm2/Vs이며, 스핀 코팅으로 만들어진 소자 이동도는 0.0036 cm2/Vs으로 소프트 리소그래피 방법으로 제작된 소자가 약 20배 이상 높은 이동도와 더 우수한 전기적 성능을 보였다.

Transparent and Flexible All-Organic Multi-Functional Sensing Devices Based on Field-effect Transistor Structure

  • Trung, Tran Quang;Tien, Nguyen Thanh;Seol, Young-Gug;Lee, Nae-Eung
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2011년도 제40회 동계학술대회 초록집
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    • pp.491-491
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    • 2011
  • Transparent and flexible electronic devices that are light-weight, unbreakable, low power consumption, optically transparent, and mechanical flexible possibly have great potential in new applications of digital gadgets. Potential applications include transparent displays, heads-up display, sensor, and artificial skin. Recent reports on transparent and flexible field-effect transistors (tf-FETs) have focused on improving mechanical properties, optical transmittance, and performances. Most of tf-FET devices were fabricated with transparent oxide semiconductors which mechanical flexibility is limited. And, there have been no reports of transparent and flexible all-organic tf-FETs fabricated with organic semiconductor channel, gate dielectric, gate electrode, source/drain electrode, and encapsulation for sensor applications. We present the first demonstration of transparent, flexible all-organic sensor based on multifunctional organic FETs with organic semiconductor channel, gate dielectric, and electrodes having a capability of sensing infrared (IR) radiation and mechanical strain. The key component of our device design is to integrate the poly(vinylidene fluoride-triflouroethylene) (P(VDF-TrFE) co-polymer directly into transparent and flexible OFETs as a multi-functional dielectric layer, which has both piezoelectric and pyroelectric properties. The P(VDF-TrFE) co-polumer gate dielectric has a high sensitivity to the wavelength regime over 800 nm. In particular, wavelength variations of P(VDF-TrFE) molecules coincide with wavelength range of IR radiation from human body (7000 nm ~14000 nm) so that the devices are highly sensitive with IR radiation of human body. Devices were examined by measuring IR light response at different powers. After that, we continued to measure IR response under various bending radius. AC (alternating current) gate biasing method was used to separate the response of direct pyroelectric gate dielectric and other electrical parameters such as mobility, capacitance, and contact resistance. Experiment results demonstrate that the tf-OTFT with high sensitivity to IR radiation can be applied for IR sensors.

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CuPC PET의 기판온도에 따른 전기적 특성 연구 (Electrical Properties of CuPC FET with Varying Substrate Temperature)

  • 이호식;천민우;박용필
    • 한국정보통신학회논문지
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    • 제13권1호
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    • pp.110-114
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    • 2009
  • 최근에 유기물 전계효과 트랜지스터의 연구는 전자소자분야에서 널리 알려져 있다. 특히 본 연구에서는CuPc 물질을 기본으로 하여 소자를 제작하고, 또한 기판의 온도를 달리 하여 제작하였다. CuPc FET 소자는 top-contact 방식으로 제작하였으며, 기판의 온도는 상온과 $150^{\circ}C$로 달리 하였다. 또한 CuPc의 두께는 40nm로 하였고, 채널의 길이는 $50{\mu}m$, 폭은 3mm로 하였다. 제작된 소자를 이용하여 전압-전류 특성을 측정하였다.

CuPc FET의 기판온도에 따른 제작 및 전기적 특성 연구 (Fabrication and Electrical Properties of CuPc FET with Different Substrate Temperature)

  • 이호식;양승호;박용필
    • 한국정보통신학회:학술대회논문집
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    • 한국해양정보통신학회 2007년도 춘계종합학술대회
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    • pp.548-551
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    • 2007
  • 최근에 유기물 전계효과 트랜지스터의 연구는 전자 소자 분야에서 널리 알려져 있다. 특히 본 연구에서는 CuPc 물질을 기본으로 하여 소자를 제작하고, 또한 기판의 온도를 달리 하여 제작하였다. CuPc FET 소자는 top-contact 방식으로 제작하였으며, 기판의 온도는 상온과 $150^{\circ}C$로 달리 하였다. 또한 CuPc의 두께는 40nm로 하였고, 채널의 길이는 $50{\mu}m$, 폭은 3mm로 하였다. 제작된 소자를 이용하여 전압-전류 특성을 측정하였다.

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Electrical and Optical Study of PLED & OLEDS Structures

  • Mohammed, BOUANATI Sidi;SARI, N. E. CHABANE;Selma, MOSTEFA KARA
    • Transactions on Electrical and Electronic Materials
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    • 제16권3호
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    • pp.124-129
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    • 2015
  • Organic electronics are the domain in which the components and circuits are made of organic materials. This new electronics help to realize electronic and optoelectronic devices on flexible substrates. In recent years, organic materials have replaced conventional semiconductors in many electronic components such as, organic light-emitting diodes (OLEDs), organic field-effect transistors (OFETs) and organic photovoltaic (OPVs). It is well known that organic light emitting diodes (OLEDs) have many advantages in comparison with inorganic light-emitting diodes LEDs. These advantages include the low price of manufacturing, large area of electroluminescent display, uniform emission and lower the requirement for power. The aim of this paper is to model polymer LEDs and OLEDs made with small molecules for studying the electrical and optical characteristics. The purpose of this modeling process is, to obtain information about the running of OLEDs, as well as, the injection and charge transport mechanisms. The first simulation structure used in this paper is a mono layer device; typically consisting of the poly (2-methoxy-5(2'-ethyl) hexoxy-phenylenevinylene) (MEH-PPV) polymer sandwiched between an anode with a high work function, usually an indium tin oxide (ITO) substrate, and a cathode with a relatively low work function, such as Al. Electrons will then be injected from the cathode and recombine with electron holes injected from the anode, emitting light. In the second structure, we replaced MEH-PPV by tris (8-hydroxyquinolinato) aluminum (Alq3). This simulation uses, the Poole-Frenkel -like mobility model and the Langevin bimolecular recombination model as the transport and recombination mechanism. These models are enabled in ATLAS- SILVACO. To optimize OLED performance, we propose to change some parameters in this device, such as doping concentration, thickness and electrode materials.

CuPe/Au 소자의 기판 온도 변화에 따른 표면전위 특성 (Surface Potential Properties of CuPc/Au Device with Different Substrate Temperature)

  • 이호식;박용필;김영표;천민우;유성미
    • 한국정보통신학회:학술대회논문집
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    • 한국해양정보통신학회 2007년도 추계종합학술대회
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    • pp.758-760
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    • 2007
  • 최근에 유기물 전계효과 트랜지스터의 연구는 전자 소자 분야에서 널리 알려져 있다. 특히 본 연구에서는 CuPc 물질을 기본으로 하여 소자를 제작하고, 또한 기판의 온도를 달리 하여 CuPc/Au 구조 소자의 표면 전위 특성을 측정하였다. 기판은 slide glass를 사용하였고, CuPc 박막파 Au 전극은 진공 증착법을 이용하였다. 측정 온도의 범위는 0 - $100^{\circ}C$이었으며, 모든 측정은 진공 상태에서 측정이 이루어 졌다. 상온에서의 표면 전위 값은 약 600mV의 값을 보이고 있으며, 기판의 온도가 $100^{\circ}C$일 때 표면 전위 값은 약 500mV의 값으로 감소하는 것을 알 수 있다. 이러한 표면 전위 값의 변화는 기판의 온도가 상승하면서 CuPc 벌크 박막의 특성이 변화하는 것으로 판단되며, AFM 측정을 통해 확인 할 수 있었다.

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