• Title/Summary/Keyword: Organic field-effect transistor (OFET) CuPc

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Electrical Properties of Field Effect Transistor using F16CuPc (F16CuPc를 이용한 Field Effect Transistor의 전기적 특성 연구)

  • Lee, Ho-Shik;Park, Young-Pil;Cheon, Min-Woo
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2008.11a
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    • pp.389-390
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    • 2008
  • We fabricated organic field-effect transistors (OFETs) based a fluorinated copper phthalocyanine ($F_{16}CuPc$) as an active layer. And we observed the surface morphology of the $F_{16}CuPc$ thin film. The $F_{16}CuPc$ thin film thickness was 40nm, and the channel length was $50{\mu}m$, channel width was 3mm. We observed the typical current-voltage (I-V) characteristics and capacitance-voltage (C-V) in $F_{16}CuPc$ FET and we calculated the effective mobility.

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Electrical Properties with Varying CuPc Thickness and Channel Length of the Field-effect Transistor (CuPc 두께 변화 및 채널 길이 변화에 따른 전계 효과 트랜지스터의 전기적 특성 연구)

  • Lee, Ho-Shik
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.20 no.1
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    • pp.47-52
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    • 2007
  • Organic field-effect transistors (OFETS) are of interest for use in widely area electronic applications. We fabricated a copper phthalocyanine (CuPc) based field-effect transistor with varying channel length. The CuPc FET device was made a top-contact type and the channel length was a $100\;{\mu}m,\;50\;{\mu}m,\;40\;{\mu}m,\;and\;30\;{\mu}m$ and the channel width was a fixed at 3 mm. We observed a typical current-voltage (I-V) characteristics in CuPc FET with varying channel length (L) and we calculated the effective mobility. Also, we measured a capacitance-voltage (C-V) by applied bias voltage with varying frequency at 43, 100, 1000 Hz.

Electrical Properties of a CuPc Field-Effect Transistor Using a UV/Ozone Treated and Untreated Substrate

  • Lee, Ho-Shik;Cheon, Min-Woo;Park, Yong-Pil
    • Transactions on Electrical and Electronic Materials
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    • v.12 no.1
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    • pp.40-42
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    • 2011
  • An organic field-effect transistor (OFET) was fabricated using a copper phthalocyanine (CuPc) as the active layer on the silicon substrate. The CuPc FET device was configured as a top-contact type. The substrate temperature was room temperature. The CuPc thickness was 40 nm, and the channel length and channel width were 100 ${\mu}m$ 3 mm, respectively. Typical current-voltage (I-V) characteristics of the CuPc FET were observed and subsequently compared to the UV/ozone treatment on substrate surface.

Bipolar Characteristics of Organic Field-effect Transistor Using F16CuPc with Active Layer ($F_{16}CuPC$를 활성층으로 사용한 유기전계효과트랜지스터의 바이폴라 특성연구)

  • Lee, Ho-Shik;Park, Young-Pil;Cheon, Min-Woo;Kim, Tae-Gon;Kim, Young-Phyo
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2009.06a
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    • pp.303-304
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    • 2009
  • We fabricated organic field-effect transistors (OFETs) based a fluorinated copper phthalocyanine. ($F_{16}CuPc$) as an active layer. And we observed the surface morphology of the $F_{16}CuPc$ thin film. The $F_{16}CuPc$ thin film thickness was 40nm, and the channel length was $50{\mu}m$, channel width was 3mm. We observed the typical current-voltage (I-V) characteristics and capacitance-voltage (C-V) in $F_{16}CuPc$ FET and we calculated the effective mobility.

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Electrical Properties of CuPc-OFET with Metal Electrode (금속 전극에 따른 CuPc-OFET 의 전기적 특성)

  • Lee, Ho-Shik;Park, Yong-Pil
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • 2007.10a
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    • pp.751-753
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    • 2007
  • Organic field-effect transistors (OFETs) are of interest for use in widely area electronic applications. We fabricated a copper phthalocyanine (CuPc) based field-effect transistor with different metal electrode. The CuPc FET device was made a top-contact type and the substrate temperature was room temperature. The source and drain electrodes were used an Au and Al materials. The CuPc thickness was 40nm. and the channel length was $50{\mu}m$, channel width was 3mm. We observed a typical current-voltage (I-V) characteristics in CuPc FET with different electrode materials.

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Electrical Properties of CuPc FET with Different Substrate Temperature

  • Lee, Ho-Shik;Park, Yong-Pil;Cheon, Min-Woo
    • Transactions on Electrical and Electronic Materials
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    • v.8 no.4
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    • pp.170-173
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    • 2007
  • Organic field-effect transistors (OFETs) are of interest for use in widely area electronic applications. We fabricated the organic field-effect transistor based a copper phthalocyanine (CuPc) as an active layer on the silicon substrate. The CuPc FET device was made a topcontact type and the substrate temperature was room temperature and $150^{\circ}C$. The CuPc thickness was 40 nm, and the channel length was $50{\mu}m$, channel width was 3 mm. We observed the typical current-voltage (I-V) characteristics and capacitance-voltage (C-V) in CuPc FET and we calculated the effective mobility with each device. Also, we observed the AFM images with different substrate temperature.

Electrical Properties of CuPc Field-effect Transistor Using CuPc Derivate Material (CuPc 유도체를 사용한 OFET의 전기적 특성 연구)

  • Lee, Ho-Shik;Park, Young-Pil;Cheon, Min-Woo;Kim, Tae-Gon;Kim, Young-Phyo
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2009.06a
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    • pp.279-280
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    • 2009
  • Organic field-effect transistors (OFETs) are of interest for use in widely area electronic applications. We fabricated a copper phthalocyanine (CuPc) based field-effect transistor with different metal electrode. The CuPc FET device was made a top-contact type and the substrate temperature was room temperature. The source and drain electrodes were used an Au and Al materials. The CuPc thickness was 40nm, and the channel length was $50{\mu}m$, channel width was 3mm. We observed a typical current-voltage (I-V) characteristics in CuPc FET with different electrode materials.

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Electrical Properties of CuPc Field-effect Transistor with Different Metal Electrodes (금속 전극 변화에 따른 CuPc Field-effect Transistor의 전기적 특성)

  • Lee, Ho-Shik;Park, Yong-Pil
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2007.11a
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    • pp.494-495
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    • 2007
  • Organic field-effect transistors (OFETs) are of interest for use in widely area electronic applications. We fabricated a copper phthalocyanine (CuPc) based field-effect transistor with different metal electrode. The CuPc FET device was made a top-contact type and the substrate temperature was room temperature. The source and drain electrodes were used an Au and Al materials. The CuPc thickness was 40nm, and the channel length was $50{\mu}m$, channel width was 3mm. We observed a typical current-voltage (I-V) characteristics in CuPc FET with different electrode materials.

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Properties of FET using Activative Materials with F16CuPc (F16CuPc를 활성층으로 사용한 FET의 특성 연구)

  • Lee, Ho-Shik;Park, Young-Pil
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2009.04b
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    • pp.43-44
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    • 2009
  • We fabricated organic field-effect transistors (OFETs) based a fluorinated copper phthalocyanine ($F_{16}CuPc$) as an active layer. And we observed the surface morphology of the $F_{16}CuPc$ thin film. The $F_{16}CuPc$ thin film thickness was 40nm, and the channel length was $50{\mu}m$, channel width was 3mm. We observed the typical current-voltage (I-V) characteristics and capacitance-voltage (C-V) in $F_{16}CuPc$ FET and we calculated the effective mobility.

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Electrical Properties of FET using F16CuPc (F16CuPc를 이용한 FET의 전기적 특성 연구)

  • Lee, Ho-Shik;Park, Young-Pil
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2008.06a
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    • pp.504-505
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    • 2008
  • We fabricated organic field-effect transistors (OFETs) based a fluorinated copper phthalocyanine ($F_{16}CuPc$) as an active layer. And we observed the surface morphology of the $F_{16}CuPc$ thin film. The $F_{16}CuPc$ thin film thickness was 40nm, and the channel length was $50{\mu}m$, channel width was 3mm. We observed the typical current-voltage (I-V) characteristics and capacitance-voltage (C-V) in $F_{16}CuPc$ FET and we calculated the effective mobility.

  • PDF