• Journal of the Korean Solar Energy Society
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• v.39 no.1
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• pp.33-40
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• 2019

Al-doped ZnO (AZO) thin films were synthesized on Si(100) wafers via plasma enhanced metal organic chemical vapor deposition (PE-MOCVD) method using diethyl zinc (DEZ) and N-methylpyrrolidine alane (MPA) as precursors. Effects of Al/Zn mixing ratio, plasma power on the surface morphology, crystal structure, and electrical property were investigated with SEM, XRD and 4-point probe measurement respectively. Growth rate of the film decreased slightly with increasing the Al/Zn mixing ratio, however electrical property was enhanced and resistivity of the film decreased greatly about 2 orders from $9.5{\times}10^{-1}$ to $8.0{\times}10^{-3}{\Omega}cm$ when the Al/Zn mixing ratio varied from 0 to 9 mol%. XRD analysis showed that the grain size increased with increasing the Al/Zn mixing ratio. Growth rate and electrical property were enhanced in a mild plasma condition. Resistivity of AZO film decreased down to $7.0{\times}10^{-4}{\Omega}cm$ at an indirect plasma of 100 W condition which was enough value to use for the transparent conducting oxide (TCO) material.

• Progress in Superconductivity and Cryogenics
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• v.8 no.3
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• pp.5-8
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• 2006

The effect of annealing time in Metal Organic Deposition(MOD) method was investigated at reduced total pressure. As the total annealing pressure was reduced, the growth rate of YBCO films increased from 0.14nm/sec at atmospheric pressure to 4.2nm/sec at 1 Torr. For the total pres sure of 700, 500, 300, 100, and 1 Torr, the optimal annealing times of 60, 40, 20, 10, 2minutes were found in our experimental conditions. When the an nealing time was short, poor crystallinity or un-reacted phase was obtained. Also, the degradation of YBCO films occurred when exposed longer to the humid ambient at the high annealing temperature. The reduced pressure was found effective to in crease the growth rate and to control the pore size of the YBCO films in MOD method. A fast growth of MOD-YBCO films was realized with high critical current density over $1MA/cm^2$ using reduced pressure annealing. Large pores, usually observed at atmospheric pressure in MOD method, disappeared and also, the number of pores was reduced.

• Proceedings of the IEEK Conference
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• 2000.06b
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• pp.80-83
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• 2000

In this work we deposited Pentacene thin film by OMBD at the various substrate temperatures, deposition rate and the various annealing temperatures for the fabrication of organic TFT and investigated the electrical and film surface characteristics such as sheet resistance, contact resistance and conductance Film thickness were measured by $\alpha$-step and the sheet resistance, contact resistance and conductance were extracted from the relation between the distance of the contacts and the resistance. During the film deposition the substrate temperature was held at 3$0^{\circ}C$, 4$0^{\circ}C$, 5$0^{\circ}C$, 6$0^{\circ}C$, 8$0^{\circ}C$ and 10$0^{\circ}C$, respectively. After the film deposition, Au contact was deposited by thermal evaporation. For the effect of annealing, the thin film was annealed in the nitrogen environment at 10$0^{\circ}C$ and 14$0^{\circ}C$ for 10 seconds, respectively. Film surface characteristics at the vatious substrate temperatures were measured by AFM. The crystallization of thin film was improved as the substrate temperatures were increased and the maximum gram size was 4${\mu}{\textrm}{m}$. The conductivity of thin film was found to be 7.40 $\times$10$^{-7}$ ~ 7.78$\times$10$^{-6}$ S/cm and the minimum contact resistance was 2.5324 ㏁.

• Applied Chemistry for Engineering
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• v.10 no.7
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• pp.985-989
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• 1999

Silica($SiO_2$) thin film was synthesized by a low pressure metal organic chemical vapor deposition(LPMOCVD) using organic silane compound. Triethyl orthosilicate was used as a source material. Operation pressure was 1~100 torr at outlet of the reactor and deposition temperature was $600{\sim}900^{\circ}C$. The experimental results showed that the high reaction temperature and high source gas concentration led to higher growth rate of $SiO_2$. The step coverage of films on micro-scale trenches was fairly good, which resulted from the phenomena that the condensed oligomers flow into the trenches. We estimated a reaction path that the source gas polymerizes and produces oligomers (dimer, trimer, tetramer, etc.), which diffuse and condense on the solid surface. The chemical species in the gas phase at the outlet of reactor tube were analyzed by quadrapole mass spectrometer. The peaks, assigned to be monomer, dimer of source gas and geavier molecules, were observed at 650 or $700^{\circ}C$. At higher temperature($900^{\circ}C$), the peaks of the heavy molecules disappeared, because almost all the source gas and intermediate(polymerized oligomer) molecules were oxidized or condensed on colder tube wall.

• Korean Journal of Materials Research
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• v.9 no.3
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• pp.257-262
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• 1999

The selective area growth of GaN by metal organic chemical vapor deposition has been carried out on GaN/ sapphire substrate using $SiO_2$ mask. We investgated the effect of growth parameters such as flow rate of $NH_3$(500­~1300sccm) and the growth temperature(TEX>$950~1060^{\circ}C$) on the growth selectivity and characteristics of GaN using the Scanning Electron Microscopy(SEM). The selectivity of GaN improved as flow rate of NH, and growth temperature in­creased. But the grown GaN shapes on the substrate windows was independent of the flow rate of $NH_3$. On the pattern shapes such as circle, stripe, and radiational pattern(rotate the stripe pattern by $30^{\circ}, 45^{\circ}$), we observed the hexagonal pyramid, the lateral over growth on the mask layer, and the difference of the lateral growth rate depending on growth condition.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.150-150
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• 2016

Mankind is enjoying a great convenience of their life by the rapid growth of secondary industry since the Industrial Revolution and it is possible due to the invention of huge power such as engine. The automobile which plays the important role of industrial development and human movement is powered by the Engine Module, and especially Diesel engine is widely used because of mechanical durability and energy efficiency. The main work mechanism of the Diesel engine is composed of inhalation of the organic material (coal, oil, etc.), combustion, explosion and exhaust Cycle process then the carbon compound emissions during the last exhaust process are essential which is known as the major causes of air pollution issues in recent years. In particular, COx, called carbon oxide compound which is composed of a very small size of the particles from several ten to hundred nano meter and they exist as a suspension in the atmosphere. These Diesel particles can be accumulated at the respiratory organs and cause many serious diseases. In order to compensate for the weak point of such a Diesel Engine, the DPF(Diesel Particulate Filter) post-cleaning equipment has been used and it mainly consists of ceramic materials(SiC, Cordierite etc) because of the necessity for the engine system durability on the exposure of high temperature, high pressure and chemical harsh environmental. Ceramic Material filter, but it remains a lot of problems yet, such as limitations of collecting very small particles below micro size, high cost due to difficulties of manufacturing process and low fuel consumption efficiency due to back pressure increase by the small pore structure. This study is to test the possibility of new structure by direct infiltration of SiC Whisker on Carbon felt as the next generation filter and this new filter is expected to improve the above various problems of the Ceramic DPF currently in use and reduction of the cost simultaneously. In this experiment, non-catalytic VS CVD (Vapor-Solid Chemical Vaporized Deposition) system was adopted to keep high mechanical properties of SiC and MTS (Methyl-Trichloro-Silane) gas used as source and H2 gas used as dilute gas. From this, the suitable whisker growth for high performance filter was observed depending on each deposition conditions change (input gas ratio, temperature, mass flow rate etc.).

• Korean Journal of Materials Research
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• v.7 no.1
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• pp.33-39
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• 1997

Single phase pero~~skite lead lanthanum titanate thin films were fabricated on $Pt/Ti/SiO_2/Si$ substrates at the temperature of $480^{\circ}C$ by electron cyclotron resonance plasma-enhanced chemical vapor deposition (ECR PECVD) using metal organic sources $Pb(DPM)_2$ pre-flowing treatment in ECIi oxygen plasma before fabricating PLT films 11romote the perovskite nucleation due to stable supplying of the $Pb(DPM)_2$ and providing the F'h-rich atmosphere in the early stage of deposition. $Pb(DPM)_2$ pie-flonring treatment enhanced the properties of PLT films. The charactcristics of the PLT filrris were investigated as a tunction of the flow rate of Ti-source. The PL'i' films were grown in a perovskite structure tvith (100) preferred orientation. The high X-ray diffraction intensity and dielectric constant were obtained from the stoichiometric perovskite $(Pb,La)TiO_3$.

• Journal of the Korean Vacuum Society
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• v.6 no.3
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• pp.213-219
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• 1997

The plasma polymerized styrene films were prepared by using an inter-electrode capacitively coupled gas-flow-type reactor, and the effects of plasma polymerization condition on the molecular weight distribution were investigated by Fourier Transform Infrared (FT-IR), Pyrolysis Gas Chromatography(PyGC), Differential Scanning Calorimetry(DSC) and Gel Permeation Chromatography(GPC). From the above results, the very cross-linked films different from chemical characteristics of the starting monomer were taken out, and it is realized that the molecular structure, cross linking density, and molecular weight distribution could be controlled by changing the parameters such as deposition pressure, deposition power and gas flow rate. Accordingly, it is suggested that plasma polymerization method performed by inter-electrode capacitively coupled gas-flow-type reactor has good characteristics for manufacturing the functional organic thin films which can be applied in sensors, opto-electric device, photo-resist by changing the polymerization parameters.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.78-78
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• 2013

Recently, many platinoid metals like platinum and ruthenium have been used as an electrode of microelectronic devices because of their low resistivity and high work-function. However the material cost of Ru is very expensive and it usually takes long initial nucleation time on SiO2 during chemical deposition. Therefore many researchers have focused on how to enhance the initial growth rate on SiO2 surface. There are two methods to deposit Ru film with atomic layer deposition (ALD); the one is thermal ALD using dilute oxygen gas as a reactant, and the other is plasma enhanced ALD (PEALD) using NH3 plasma as a reactant. Generally, the film roughness of Ru film deposited by PEALD is smoother than that deposited by thermal ALD. However, the plasma is not favorable in the application of high aspect ratio structure. In this study, we used a bis(ethylcyclopentadienyl)ruthenium [Ru(EtCp)2] as a metal organic precursor for both thermal and plasma enhanced ALDs. In order to reduce initial nucleation time, we use several methods such as Ar plasma pre-treatment for PEALD and usage of sacrificial RuO2 under layer for thermal ALD. In case of PEALD, some of surface hydroxyls were removed from SiO2 substrate during the Ar plasma treatment. And relatively high surface nitrogen concentration after first NH3 plasma exposure step in ALD process was observed with in-situ Auger electron spectroscopy (AES). This means that surface amine filled the hydroxyl removed sites by the NH3 plasma. Surface amine played a role as a reduction site but not a nucleation site. Therefore, the precursor reduction was enhanced but the adhesion property was degraded. In case of thermal ALD, a Ru film was deposited from Ru precursors on the surface of RuO2 and the RuO2 film was reduced from RuO2/SiO2 interface to Ru during the deposition. The reduction process was controlled by oxygen partial pressure in ambient. Under high oxygen partial pressure, RuO2 was deposited on RuO2/SiO2, and under medium oxygen partial pressure, RuO2 was partially reduced and oxygen concentration in RuO2 film was decreased. Under low oxygen partial pressure, finally RuO2 was disappeared and about 3% of oxygen was remained. Usually rough surface was observed with longer initial nucleation time. However, the Ru deposited with reduction of RuO2 exhibits smooth surface and was deposited quickly because the sacrificial RuO2 has no initial nucleation time on SiO2 and played a role as a buffer layer between Ru and SiO2.

• Korean Journal of Organic Agriculture
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• v.18 no.3
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• pp.347-361
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• 2010

This study was carried out to investigate the effects of wormwood (Artemisia sp.) addition on the growth performance, nutrients utilization and abdominal fat deposition of broiler chickens. Two hundred twenty five and two-day old Arboracre strain male commercial broiler chicks were distributed to 5 treatments with wormwood supplementation levels; C(O%), $T_1$ (1%), $T_2$ (3%), $T_3$ (5%), and $T_4$ (10%) and with 3 replications each with 5 birds for five weeks. Body weight gain during the experiment was improved in $T_1$ (1723.0g) compared with that of $T_3$ (1557.7g) and $T_4$ (1450.7g) (P<0.05). Feed intake was significantly (P<0.05) increased as the levels of wormwood addition increased (C: 2653.8g, T1: 2852.0, $T_2$: 2900.3, $T_3$: 2900.7g, T4: 2954.7g). Feed conversion rate (feed/gain) was significantly (P<0.05) increased as the levels of wormwood addition increased (C: 1.55, $T_1$: 1.66, $T_2$: 1.70, $T_3$: 1.86, $T_4$: 2.04). The days reaching to 2.0kg of body weight were expected to be 43.2 days in control, whereas those of group T1 were reduced to 42.6 days by 0.6 day from control. Nutrient utilization and abdominal fat deposition in the experiment were significantly decreased (P<0.05) and small intestine contents in the broilers was significantly increased (P<0.05) as the levels of wormwood addition increased. Therefore, although there was no significant improvement for the performance of broiler chickens with the dietary supplementation of wormwood meal, less than 1% addition of wormwood to broiler diets might have beneficial for human health by reducing the abdominal fat deposition of the broiler chicknens.