• 한국정보디스플레이학회:학술대회논문집
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• 2007.08b
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• pp.1336-1339
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• 2007

Since organic thin film transistor (OTFT) provides simple and low cost processes, its application to the OTFT display has been studied. We developed an RC oscillator using organic thin film transistor and inverters with bootstrapping transistors. Device parameters were optimized by the simulation and OTFT RC oscillators were fabricated. The oscillator frequency and its dependence on resistance and bias voltage were studied. The organic TFT is adequate for low cost and simple process integrated circuits. The frequency of oscillation was simulated and measured. It is acceptable for low-cost microelectronic device and flat panel displays.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2006.05a
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• pp.595-596
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• 2006

The flexible organic thin film transistor (OTFT) array to use as a switching device for an organic light emitting diode (OLED) was designed and fabricated in the microcontact printing and low-temperature processes. The gate, source, and drain electrode patterns of OTFT were fabricated by microcontact printing which is high-resolution lithography technology using polydimethylsiloxane(PDMS) stamp. The OTFT array with dielectric layer and organic active semiconductor layers formed at room temperature or at a temperature tower than $40^{\circ}C$. The microcontact printing process using SAM(self-assembled monolayer) and PDMS stamp made it possible to fabricate OTFT arrays with channel lengths down to even nano size, and reduced the procedure by 10 steps compared with photolithography. Since the process was done in low temperature, there was no pattern transformation and bending problem appeared. It was possible to increase close packing of molecules by SAM, to improve electric field mobility, to decrease contact resistance, and to reduce threshold voltage by using a big dielecric.

• Electrical & Electronic Materials
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• v.17 no.7
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• pp.5-11
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• 2004

유기박막 트랜지스터 (Organic Thin Film Transistor : OTFT)에 관한 연구는 1980년 이후부터 시작되었으나 근래에 들어 전 세계적으로 본격적인 연구가 진행되고 있다. 이는 OTFT가 넓은 면적 위에 소자를 제작할 경우, 낮은 공정 온도를 필요로 하는 경우, 또한 구부림이 가능해야 하는 경우, 특히 저가 공정이 필요한 경우 등에 가장 적합한 것으로 생각되고 있기 때문이다. 이러한 OTFT는 미래의 정보표시 장치의 필수적인 요소들과 집적화가 매우 용이하다는 장점을 가지고 있다. 소재의 특성상 유기 발광 다이오드에 쓰이는 발광 유기물과 같은 유기 반도체가 OTFT의 제작에 사용 가능하므로 증착 공정, 물리적 화학적 성질이 매우 유사하다.(중략)

• Journal of Electrical Engineering and Technology
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• v.6 no.6
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• pp.836-841
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• 2011

Plasma polymerized methyl methacrylate (ppMMA) thin films were deposited by plasma polymerization technique with different plasma powers and subsequently thermally treated at temperatures of 60 to $150^{\circ}C$. To find a better ppMMA preparation technique for application to organic thin film transistor (OTFT) as dielectric layer, the chemical composition, surface morphology, and electrical properties of ppMMA were investigated. The effect of ppMMA thin-film preparation conditions on the resulting thin film properties were discussed, specifically O-H site content in the pMMA, dielectric constant, leakage current density, and hysteresis.

• Transactions on Electrical and Electronic Materials
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• v.7 no.5
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• pp.267-270
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• 2006

The Indium tin oxide (ITO) films were deposited on CR39 substrate using DC magnetron sputtering. ITO thin films deposited at room temperature because CR39 substrates its glass-transition temperature of is $130^{\circ}C$. ITO thin films used bottom and top electrode and for organic thin film transparent transistor.(OTFT) ITO thin film electrodes electrical properties and optical transparency properties in the visible wavelength range (300 - 800 nm) strongly dependent on volume of oxygen percent. For the optimum resistivity and transparency of ITO thin film electrode achieved with a 75 W plasma power, 10 % volume of oxygen and a 27 nm/min deposition rate. Above 85 % transparency in the visible wavelength range (300 - 800 nm) measured without post annealing process and $9.83{times}10{-4}{\Omega}cm$ a low resistivity was measured thickness of 300 nm.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.113-116
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• 2008

The active layer thickness and curing condition dependent performance of an organic thin film transistor (OTFT) with inkjetted organic semiconductor (OSC) layer is studied The best performance of the OTFT was found when the thickness of ose was ~120 nm cured at $60^{\circ}C$. The performance enhancement of the OTFT with inkjetted OSC layer was discussed by comparing the OTFT with spin-coated ose layer.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.312-315
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• 2001

Recently organic electroluminescent devices have been intensively investigated for using in full-color flat-panel display. Since the quantum efficiency of electrophosphorescent device decrease rapidly as the luminance increase, it is desirable to operate the electrophosphorescent display with active matrix rather than passive matrix. Here we report the study of driving electrophosphorescent diode with all organic thin film transistor(OTFT). The structure of electrophosphorescent diode is ITO/TPD/BCP:Ir(ppy)$_3$/BCP/Alq$_3$/Li:Al/Al. In OTFT. polymer is used as an insulator and pentacene as an active layer. Detailed performance of the integrated device will be discussed.

• Bulletin of the Korean Chemical Society
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• v.28 no.6
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• pp.995-998
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• 2007

Pentacene moiety has been widely studied in Organic Thin-Film Transistor (OTFT) device as a channel layer because of high carrier mobility. In this study, we have fabricated vertical type Organic Static Induction Transistors (SITs) using pentacene, 6,13-Dinaphthalen-1-ly-Pentacene (1-DNP, 3), and 6,13-Dinaphthalen-2- ly-Pentacene (2-DNP, 4). 1-DNP and 2-DNP have same naphtyl group with pentacene, but different linked position and spatial arrangement. We have checked the static characteristics of materials in vertical type SITs device. We found that pentacene has as on/off ratio of 14.56, 1-DNP and 2-DNP shows as on/off ratio of 36.58 and 6.61 at VDS = 2V in SIT, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.312-315
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• 2001

Recently organic electroluminescent devices have been intensively investigated for using in full-color flat-panel display. Since the quantum efficiency of electrophosphorescent device decrease rapidly as the luminance increase, it is desirable to operate the electrophosphorescent display with active matrix rather than passive matrix. Here we report the study of driving electrophosphorescent diode with all organic thin film transistor(OTFT). The structure of electrophosphorescent diode is ITO/TPD/BCP:Ir(ppy)$_3$/BCP/Alq$_3$/Li:Al/Al. In OTFT, Polymer is used as an insulator and pentacene as an active layer. Detailed performance of the integrated device will be discussed.

• Korean Journal of Materials Research
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• v.17 no.4
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• pp.232-235
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• 2007

Indium tin oxide (ITO) films were deposited on polycarbonate CR39 substrate using DC magnetron sputtering. ITO thin films were deposited at room temperature because glass-transition temperature of CR39 substrate is $130^{circ}C$ ITO thin films are used as bottom and top electrodes and for organic thin film transparent transistor (OTFT). The electrodes electrical properties of ITO thin films and their optical transparency properties in the visible wavelength range (300-800 nm) strongly depend on the volume of oxygen percent. The optimum resistivity and transparency of ITO thin film electrode was achieved with a 75 W plasma power, 10 % volume of oxygen and a 27 nm/min deposition rate. Above 85% transparency in the visible wavelength range (300-800 nm) was measured without post annealing process, and resistivity as low as $9.83{\times}^{TM}10^{-4}{\Omega}$ cm was measured at thickness of 300 nm.