• Title/Summary/Keyword: Organic Crystal

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Single Crystal Silicon Thin Film Transistor using 501 Wafer for the Switching Device of Top Emission Type AMOLEDs (SOI 웨이퍼를 이용한 Top emission 방식 AMOLEDs의 스위칭 소자용 단결정 실리콘 트랜지스터)

  • Chang, Jae-Won;Kim, Hoon;Shin, Kyeong-Sik;Kim, Jai-Kyeong;Ju, Byeong-Kwon
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.16 no.4
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    • pp.292-297
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    • 2003
  • We fabricated a single crystal silicon thin film transistor for active matrix organic light emitting displays(AMOLEDs) using silicon on insulator wafer (SOI wafer). Poly crystal silicon thin film transistor(poly-Si TFT) Is actively researched and developed nowsdays for a pixel switching devices of AMOLEDs. However, poly-Si TFT has some disadvantages such as high off-state leakage currents and low field-effect mobility due to a trap of grain boundary in active channel. While single crystal silicon TFT has many advantages such as high field effect mobility, low off-state leakage currents, low power consumption because of the low threshold voltage and simultaneous integration of driving ICs on a substrate. In our experiment, we compared the property of poly-Si TFT with that of SOI TFT. Poly-Si TFT exhibited a field effect mobility of 34 $\textrm{cm}^2$/Vs, an off-state leakage current of about l${\times}$10$\^$-9/ A at the gate voltage of 10 V, a subthreshold slope of 0.5 V/dec and on/off ratio of 10$\^$-4/, a threshold voltage of 7.8 V. Otherwise, single crystal silicon TFT on SOI wafer exhibited a field effect mobility of 750 $\textrm{cm}^2$/Vs, an off-state leakage current of about 1${\times}$10$\^$-10/ A at the gate voltage of 10 V, a subthreshold slope of 0.59 V/dec and on/off ratio of 10$\^$7/, a threshold voltage of 6.75 V. So, we observed that the properties of single crystal silicon TFT using SOI wafer are better than those of Poly Si TFT. For the pixel driver in AMOLEDs, the best suitable pixel driver is single crystal silicon TFT using SOI wafer.

Structure analysis, and magnetic study of a new Gd-metal-organic framework single crystal grown by the slow-evaporation method (증발법으로 합성된 신규 가돌리늄 금속-유기골격체의 단결정 구조 분석 및 자성학적 특성 연구)

  • Song, Jeong Hwa
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.32 no.5
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    • pp.199-204
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    • 2022
  • A new three-dimensional Gd-MOF, [Gd(p-XBP4)4(H2O)]·W(CN)8; (1; p-XBP4 = N,N'-p-phenylenedimethylenbis (pyridin-4-one)) has been synthesized by slow-evaporation and its crystal structure was characterized by single-crystal X-ray diffraction (SCXRD) analysis. For each GdIII ion, there are seven coordination sites, which are occupied by six oxygen atoms of six p-XBP4 ligands and one oxygen atom from the water molecule. The [W(CN)8]3- anion exists for charge balance with cationic framework. The GdII ions are interconnected by the p-XBP4 ligand to form the three-dimensional structure. Considering the magnetic property of lanthanide ions, magnetic studies of Gd-MOF were investigated by direct-current (DC) magnetic susceptibilities measurements.

Crystal Structure Theory and Applications of 14-Ethoxy-4,6,-dimethyl-8.12- dioxa-4.6-diazatetracyclo [8.8.0.02,7.013,18]octadeca-13,15,17-triene-3,5-dione

  • Ganapathy, Jagadeesan;Sivakumar, G.;Manickam, Bakthadoss;Sanmargam, Aravindhan
    • Journal of Integrative Natural Science
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    • v.8 no.1
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    • pp.19-29
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    • 2015
  • In view of the growing medicinal importance of chromene and its derivatives, the single crystal X-ray diffraction study was carried out for the potential active 4,6-dimethyl-9-phenyl-8,12-dioxa-4,6-diazatetracyclo [8.8.0.02,7.013,18]octadeca-2(7),13,15,17-tetraene-3,5,11-trione-2-ethoxyphenyl (2E)-but-2-enoate ($C_{18}H_{20}N_2O_5$). In the title compound are two molecules exist in the asymmetric unit. It crystallizes in the monoclinic space group $P2_1/c$ with unit cell dimension a=14.608(3) ${\AA}$, b=12.845(3) and c= 17.781(4) [alpha & gamma=$90^{\circ}$ beta=$91.233(5)^{\circ}$]. Both pyran and pyran ring of the chromene moiety adopts sofa conformation in the molecule A & B. The crystal structure is stabilized by intramolecular C-H...O hydrogen bond interaction.

Cocrystallization of Poly(1,4-cyclohexylenedimethylene terephthalate-co-hexamethylene terephthalate) Copolymers

  • Jeong, Young-Gyu;Jo, Won-Ho;Lee, Sang-Cheol
    • Macromolecular Research
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    • v.12 no.5
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    • pp.459-465
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    • 2004
  • We have synthesized poly(l,4-cyclohexylenedimethylene terephthalate-co-hexamethylene terephthalate) [P(CT-co-HT)] random copolymers having various comonomer contents, from 0 to 100 mol% HT, by melt-condensation and have investigated their crystallization behavior by using differential scanning calorimetry (DSC) and wide-angle X-ray diffraction (WAXD). We observed that P(CT-co-HT)s exhibit clear melting and crystallization peaks in their DSC thermograms and sharp diffraction peaks in their WAXD patterns for all of their copolymer compositions as a result of cocrystallization of the CT and HT units, even though the copolymers are statistically random copolymers. When we plotted the melting and crystallization temperatures of P(CT-co-HT)s and the d-spacings of all the reflections against the copolymer composition, we observed a eutectic point at ca. 80 mol% HT, which suggests that a crystal transition occured from a PCT-type crystal to a PHT-type crystal. Both the DSC and WAXD results support the notion that P(CT-co-HT) copolymers undergo an isodimorphic cocrystallization.

Metalorganic VPE growth of GaInP and related semiconductors for mobile communication device application

  • Udagawa, Takashi
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.11 no.5
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    • pp.207-210
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    • 2001
  • Metal-organic VPE (MOVPE) epitaxial growth procedure and related device fabrication technique are reported for GaInP-based epitaxial materials and devices. For GaInP/GaInAs two-dimensional electron-gas field-effect transistor (TEGFET), a promising epitaxial stacking structure resulting in enhanced electron mobility is given. In conjunction with this, a new device fabrication technique to improve luminous intensity of GaInP-based LED is also shown.

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Imprinting of Liquid Crystal Alignment on Polymer Layers

  • Wook, Jung-Jong;Kim, Jae-Hoon
    • 한국정보디스플레이학회:학술대회논문집
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    • 2003.07a
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    • pp.611-614
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    • 2003
  • We have investigated electric field effect on the formation of phase separated composite organic film structure which is utilized by anisotropic phase separation from LC and prepolymer mixtures. Application of bias field resulted in a significant change in liquid crystal alignment between glass substrate and polymer layer. The liquid crystal molecules segregated into the inter-electrodes and formed twisted structure which is the result of imprinting of LC alignment by the bias field on polymer layers during polymerization process.

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A Study on the Identification Odorants using Six Channel Piezoelectric Crystals (6채널 압전소자를 이용한 냄새인식에 관한 연구)

  • 권영수;장상목;박옥순;최용성
    • The Transactions of the Korean Institute of Electrical Engineers
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    • v.41 no.8
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    • pp.947-950
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    • 1992
  • At-cut quartz crystal has been applied as chemical vapour sensors. The responses of quartz crystal at 9 MHz coated with phosphatidylglycerol(PG), phosphatidylinositol(PI), phosphatidylethanolamine(PE), phosphatidylserine(PS), and lipid A(LA) are determined for amyl acetate, acetoin, menthone and other organic gases which showed different affinities for each lipid. The identification of odorants depending on the species of lipid used for coating is discussed in terms of the normalized resonant frequency shift pattern.

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High Quality Nano Structured Single Gas Barrier Layer by Neutral Beam Assisted Sputtering (NBAS) Process

  • Jang, Yun-Sung;Lee, You-Jong;Hong, Mun-Pyo
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.08a
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    • pp.251-252
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    • 2012
  • Recently, the growing interest in organic microelectronic devices including OLEDs has led to an increasing amount of research into their many potential applications in the area of flexible electronic devices based on plastic substrates. However, these organic devices require a gas barrier coating to prevent the permeation of water and oxygen because organic materials are highly susceptible to water and oxygen. In particular, high efficiency OLEDs require an extremely low Water Vapor Transition Rate (WVTR) of $1{\times}10^{-6}g/m^2$/day. The Key factor in high quality inorganic gas barrier formation for achieving the very low WVTR required ($1{\times}10^{-6}g/m^2$/day) is the suppression of defect sites and gas diffusion pathways between grain boundaries. In this study, we developed an $Al_2O_3$ nano-crystal structure single gas barrier layer using a Neutral Beam Assisted Sputtering (NBAS) process. The NBAS system is based on the conventional RF magnetron sputtering and neutral beam source. The neutral beam source consists of an electron cyclotron Resonance (ECR) plasma source and metal reflector. The Ar+ ions in the ECR plasma are accelerated in the plasma sheath between the plasma and reflector, which are then neutralized by Auger neutralization. The neutral beam energies were possible to estimate indirectly through previous experiments and binary collision model. The accelerating potential is the sum of the plasma potential and reflector bias. In previous experiments, while adjusting the reflector bias, changes in the plasma density and the plasma potential were not observed. The neutral beam energy is controlled by the metal reflector bias. The NBAS process can continuously change crystalline structures from an amorphous phase to nano-crystal phase of various grain sizes within a single inorganic thin film. These NBAS process effects can lead to the formation of a nano-crystal structure barrier layer which effectively limits gas diffusion through the pathways between grain boundaries. Our results verify the nano-crystal structure of the NBAS processed $Al_2O_3$ single gas barrier layer through dielectric constant measurement, break down field measurement, and TEM analysis. Finally, the WVTR of $Al_2O_3$ nano-crystal structure single gas barrier layer was measured to be under $5{\times}10^{-6}g/m^2$/day therefore we can confirm that NBAS processed $Al_2O_3$ nano-crystal structure single gas barrier layer is suitable for OLED application.

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Effect of Contamination of Liquid Crystal by Spilled Components from Color Filter

  • Kim, Young-Seok;Lee, Jeong-No
    • 한국정보디스플레이학회:학술대회논문집
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    • 2009.10a
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    • pp.1469-1471
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    • 2009
  • Effect of contamination of liquid crystal on the electrical behavior of liquid crystal display (LCD) by spilled components from color filter layer was investigated. It is noted that the level of contamination was different following the kind of liquid crystal and organic layers. Transmittance curve of LCD cell was shifted by spilled components of color filter and BM materials. C-V curve also showed different behavior following color filter type. The results obtained show the image sticking of LCD can be varied by pairing liquid crystal with color filter materials.

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