• Korean Chemical Engineering Research
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• v.53 no.5
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• pp.620-626
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• 2015

$Ho^{3+}$ doped $SrAl_2O_4$ upconversion phosphor powders were synthesized by spray pyrolysis, and the crystallographic properties and luminescence characteristics were examined by varying activator concentrations and heattreatment temperatures. The effect of organic additives on the crystal structure and luminescent properties was also investigated. $SrAl_2O_4:Ho^{3+}$ powders showed intensive green emission due to the $^5F_4/^5S_2{\rightarrow}^5I_8$ transition of $Ho^{3+}$. The optimal $Ho^{3+}$ concentration in order to achieve the highest luminescence was 0.1%. Over this concentration, emission intensities were largely diminished via a concentration quenching due to dipole-dipole interaction between activator ions. According to the dependence of emission intensity on the pumping power of a laser diode, it was clear that the upconversion of $SrAl_2O_4:Ho^{3+}$ occurred via the ground state absorption-excited state absorption processes involving two near-IR photons. Synthesized powders were monoclinic as a major phase, having some hexagonal phase. The increase of heat-treatment temperatures from $1000^{\circ}C$ to $1350^{\circ}C$ led to crystallinity enhancement of monoclinic phase, reducing hexagonal phase. The hexagonal phase, however, did not disappear even at $1350^{\circ}C$. When both citric acid (CA) and ethylene glycol (EG) were added to the spray solution, the resulting powders had pure monoclinic phase without forming hexagonal phase, and led to largely enhancement of crystallinity. Also, N,N-Dimethylformamide (DMF) addition to the spray solution containing both CA and EG made it possible to effectively reduce the surface area of $SrAl_2O_4:Ho^{3+}$ powders. Consequently, the $SrAl_2O_4:Ho^{3+}$ powders prepared by using the spray solution containing CA/EG/DMF mixture as the organic additives showed about 168% improved luminescence compared to the phosphor prepared without organic additives. It was concluded that both the increased crystallinity of high-purity monoclinic phase and the decrease of surface area were attributed to the large enhancement of upconversion luminescence.

• Economic and Environmental Geology
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• v.44 no.1
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• pp.21-35
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• 2011

Inorganic and organic geochemical characteristics of Devonian bitumen carbonates in Alberta were studied using two drilling cores, Saleski 03-34-88-20w4 and Saleski 08-01-88-20w4, taken from the Core Research Center of Canada. The results of elements analyses showed high Total Inorganic Carbon, low Total Nitrogen and Total Sulfur, and Rock-Eval pyrolysis showed double $CO_2$ peaks in the oxidation part. These mean that the Devonian bitumen carbonates are mainly composed of dolomite formed by diagenesis, and its crystal texture is dominantly subhedral to anhedral but often euhedral. Bitumen contents were 3.6~19.0% in Saleski 3-34-88-20w4 and 5.0~16.4% in Saleski 08-01-88-20w4, respectively. As samples color become dark, bitumen and Total Organic Carbon contents are generally increasing in two cores. The results of biomarker analyses showed that the contents of resins and asphaltenes were 5~28% higher than those of saturated hydrocarbon, interring that the bitumen has been heavily biodegradated. According to the results of carbon isotope analyses in each component of bitumen, asphaltenes had highest values and the others had constant values. However, their values were varied in the range of normal crude oil (-18~-30‰).

• Clean Technology
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• v.28 no.3
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• pp.218-226
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• 2022

As a result of the recent social transformation towards a hydrogen economy and carbon-neutrality, the demands for hydrogen energy have been increasing rapidly worldwide. As such, eco-friendly hydrogen production technologies that do not produce carbon dioxide (CO₂) emissions are being focused on. Among them, ammonia (NH₃) is an economical hydrogen carrier that can easily produce hydrogen (H₂). In this study, Ru/Al₂O₃ catalyst coated onmetallic monolith for hydrogen production from ammonia was prepared by a dip-coating method using a catalyst slurry mixture composed of Ru/Al₂O₃ catalyst, inorganic binder (alumina sol) and organic binder (methyl cellulose). At the optimized 1:1:0.1 weight ratio of catalyst/inorganic binder/organic binder, the amount of catalyst coated on the metallic monolith after one cycle coating was about 61.6 g L^-1. The uniform thickness (about 42 ㎛) and crystal structure of the catalyst coated on the metallic monolith surface were confirmed through scanning electron microscopy (SEM) and X-ray diffraction (XRD) analysis. Also, a numerical optimization regression equation for NH3 conversion according to the independent variables of reaction temperature (400-600 ℃) and gas hourly space velocity (1,000-5,000 h^-1) was calculated by response surface methodology (RSM). This model indicated a determination coefficient (R²) of 0.991 and had statistically significant predictors. This regression model could contribute to the commercial process design of hydrogen production by ammonia decomposition.

• 한국신재생에너지학회:학술대회논문집
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• 2010.11a
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• pp.42.2-42.2
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• 2010

Transparent conducting oxides (TCOs) are of significant importance for their applications in various devices, such as light-emitting diodes, thin-film solar cells, organic light-emitting diodes, liquid crystal displays, and so on. In order for TCOs to contribute to the performance improvement of these devices, TCOs should have high transmittance and good electrical properties simultaneously. Sn-doped $In_2O_3$ (ITO) is the most commonly used TCO. However, indium is toxic and scarce in nature. Thus, ZnO has attracted a lot of attention because of the possibility for replacing ITO. In particular, group III impurity-doped ZnO showed the optoelectronic properties comparable to those of ITO electrodes. Al-doped ZnO exhibited the best performance among various doped ZnO films because of the high substitutional doping efficiency. However, in order for the Al-doped ZnO to replace ITO in electronic devices, their electrical and optical properties should further significantly be improved. In this connection, different ways such as a variation of deposition conditions, different deposition techniques, and post-deposition annealing processes have been investigated so far. Among the deposition methods, RF magnetron sputtering has been extensively used because of the easiness in controlling deposition parameters and its fast deposition rate. In addition, when combined with post-deposition annealing in a reducing ambient, the optoelectronic properties of Al-doped ZnO films were found to be further improved. In this presentation, we deposited Al-doped ZnO (ZnO:$Al_2O_3$ = 98:2 wt%) thin films on the glass and sapphire substrates using RF magnetron sputtering as a function of substrate temperature. In addition, the ZnO samples were annealed in different conditions, e.g., rapid thermal annealing (RTA) at $900^{\circ}C$ in $N_2$ ambient for 1 min, tube-furnace annealing at $500^{\circ}C$ in $N_2:H_2$=9:1 gas flow for 1 hour, or RTA combined with tube-furnace annealing. It is found that the mobilities and carrier concentrations of the samples are dependent on growth temperature followed by one of three subsequent post-deposition annealing conditions.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.65-65
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• 2015

In this talk, I will introduce two topics. The first topic is the polymer light emitting diodes (PLEDs) using graphene oxide quantum dots as emissive center. More specifically, the energy transfer mechanism as well as the origin of white electroluminescence in the PLED were investigated. The second topic is the facile synthesis of eco-friendly III-V colloidal quantum dots and their application to light emitting diodes. Polymer (organic) light emitting diodes (PLEDs) using quantum dots (QDs) as emissive materials have received much attention as promising components for next-generation displays. Despite their outstanding properties, toxic and hazardous nature of QDs is a serious impediment to their use in future eco-friendly opto-electronic device applications. Owing to the desires to develop new types of nanomaterial without health and environmental effects but with strong opto-electrical properties similar to QDs, graphene quantum dots (GQDs) have attracted great interest as promising luminophores. However, the origin of electroluminescence (EL) from GQDs incorporated PLEDs is unclear. Herein, we synthesized graphene oxide quantum dots (GOQDs) using a modified hydrothermal deoxidization method and characterized the PLED performance using GOQDs blended poly(N-vinyl carbazole) (PVK) as emissive layer. Simple device structure was used to reveal the origin of EL by excluding the contribution of and contamination from other layers. The energy transfer and interaction between the PVK host and GOQDs guest were investigated using steady-state PL, time-correlated single photon counting (TCSPC) and density functional theory (DFT) calculations. Experiments revealed that white EL emission from the PLED originated from the hybridized GOQD-PVK complex emission with the contributions from the individual GOQDs and PVK emissions. (Sci Rep., 5, 11032, 2015). New III-V colloidal quantum dots (CQDs) were synthesized using the hot-injection method and the QD-light emitting diodes (QLEDs) using these CQDs as emissive layer were demonstrated for the first time. The band gaps of the III-V CQDs were varied by varying the metal fraction and by particle size control. The X-ray absorption fine structure (XAFS) results show that the crystal states of the III-V CQDs consist of multi-phase states; multi-peak photoluminescence (PL) resulted from these multi-phase states. Inverted structured QLED shows green EL emission and a maximum luminance of ~45 cd/m2. This result shows that III-V CQDs can be a good substitute for conventional cadmium-containing CQDs in various opto-electronic applications, e.g., eco-friendly displays. (Un-published results).

• Korean Journal of Materials Research
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• v.4 no.6
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• pp.681-686
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• 1994

Microwave Detector Using $YBa_{2}Cu_{3}O_{7-x}$, Grain Boundary Junction $YBa_{2}Cu_{3}O_{7-x}$ superconductor thin films were deposited on $LaAIO_{3}$ (100) single crystal substrates using a metal organic chemical vapor deposition (MOCVD) method. These films showed the critical temperature of about 9OK and critical current density of over $10^5/A \textrm{cm}^2$at 77K. These films showed granular structure with 0.5~1.5$\mu \textrm{m}$ grains. Bridge-type junctions, 6$\mu \textrm{m}$ in width and 6pm in length, were fabricated using the photolithography and the Ar ion milling techniques. Current-voltage (I-V) characteristics of these junctions with the microwave irradiation at 77K were studied. The critical current densities decreased as the irradiated microwave power increased. When microwaves were irradiated on the bridge at 77K. the I-V charateristics showed constant voltage stcp(Shapiro steps) at $\Delta$=nho/2e.

• Proceedings of the Materials Research Society of Korea Conference
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• 2011.05a
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• pp.8.1-8.1
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• 2011

Nanocrystalline titanium dioxide ($TiO_2$) materials have been widely used as an electron collector in DSSC. This is required to have an extremely high porosity and surface area such that the dye can be sufficiently adsorbed and be electronically interconnected, resulting in the generation of a high photocurrent within cells. In particular, their geometrical structures and crystalline phase have been extensively investigated as important issues in improving its photovoltaic efficiency. In this study, we present a new strategy to fabricate a photoelectrode having a periodic structured $TiO_2$ film templated from 1D or 3D polystyrene (PS) microspheres array. Monodisperse PS spheres of various radiuses were used for colloidal array on FTO glasses and two types of photoelectrode structures with different $TiO_2$ materials were investigated respectively. One is the igloo-shaped electrode prepared by $TiO_2$ deposition by RF-sputtering onto 2D microsphere-templated substrates. At the interface between the film and substrate, there are voids formed by the decomposition of PS microspheres during the calcination step. These holes might be expected to play the predominant roles as scattering spherical voids to promote a light harvesting effect, a spacious structure for electrolytes with higher viscosity and effective paths for electron transfer. Additionally the nanocrystalline $TiO_2$ phase prepared by the RF-sputtering method was previously reported to improve the electron drift mobility within $TiO_2$ electrodes. This yields solar cells with a cell efficiency of 2.45% or more at AM 1.5 illumination, which is a very remarkable result, considering its $TiO_2$ electrode thickness (<2 ${\mu}m$). This study can be expanded to obtain higher cell efficiency by higher dye loading through the increase of surface area or multi-layered stacking. The other is the inverse opal photonic crystal electrode prepared by titania particles infusion within 3D colloidal arrays. To obtain the enlargement of ordered area and high quality of crystallinity, the synthesis of titania particles coated with a organic thin layer were applied instead of sol-gel process using the $TiO_2$ precursors. They were dispersed so well in most solvents without aggregates and infused successfully within colloidal array structures. This ordered mesoporous structure provides the large surface area leading to the enough adsorption of dye molecules and have an light harvesting effect due to the photonic band gap properties (back-and-forth reflection effects within structures). A major advantage of this colloidal array template method is that the pore size and its distribution within $TiO_2$ photoelectrodes are determined by those of latex beads, which can be controlled easily. These materials may have promising potentials for future applications of membrane, sensor and so on as well as solar cells.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.1261-1262
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• 2008

Laser-based crystallization techniques are ideally-suited for forming high-quality crystalline Si films on active-matrix display backplanes, because the highly-localized energy deposition allows for transformation of the as-deposited a-Si without damaging high-temperature-intolerant glass and plastic substrates. However, certain significant and non-trivial attributes must be satisfied for a particular method and implementation to be considered manufacturing-worthy. The crystallization process step must yield a Si microstructure that permits fabrication of thin-film transistors with sufficient uniformity and performance for the intended application and, the realization and implementation of the method must meet specific requirements of viability, robustness and economy in order to be accepted in mass production environments. In recent years, Low Temperature Polycrystalline Silicon (LTPS) has demonstrated its advantages through successful implementation in the application spaces that include highly-integrated active-matrix liquid-crystal displays (AMLCDs), cost competitive AMLCDs, and most recently, active-matrix organic light-emitting diode displays (AMOLEDs). In the mobile display market segment, LTPS continues to gain market share, as consumers demand mobile devices with higher display performance, longer battery life and reduced form factor. LTPS-based mobile displays have clearly demonstrated significant advantages in this regard. While the benefits of LTPS for mobile phones are well recognized, other mobile electronic applications such as portable multimedia players, tablet computers, ultra-mobile personal computers and notebook computers also stand to benefit from the performance and potential cost advantages offered by LTPS. Recently, significant efforts have been made to enable robust and cost-effective LTPS backplane manufacturing for AMOLED displays. The majority of the technical focus has been placed on ensuring the formation of extremely uniform poly-Si films. Although current commercially available AMOLED displays are aimed primarily at mobile applications, it is expected that continued development of the technology will soon lead to larger display sizes. Since LTPS backplanes are essentially required for AMOLED displays, LTPS manufacturing technology must be ready to scale the high degree of uniformity beyond the small and medium displays sizes. It is imperative for the manufacturers of LTPS crystallization equipment to ensure that the widespread adoption of the technology is not hindered by limitations of performance, uniformity or display size. In our presentation, we plan to present the state of the art in light sources and beam delivery systems used in high-volume manufacturing laser crystallization equipment. We will show that excimer-laser-based crystallization technologies are currently meeting the stringent requirements of AMOLED display fabrication, and are well positioned to meet the future demands for manufacturing these displays as well.

• Korean Chemical Engineering Research
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• v.54 no.6
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• pp.854-862
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• 2016

As the demand for a clean energy to replace fossil fuel being depleted increases, hydrogen energy is considered as a promising candidate for future energy source. Water electrolysis which produces hydrogen has high energy efficiency and stability but still has a large overpotential for oxygen evolution reaction (OER). In this study, $Co_3O_4$ catalysts with different morphology were prepared by spray pyrolysis from solutions which contain Co precursor and various organic additives (urea, sucrose, and citric acid), followed by post heat treatment. For the catalysts synthesized, X-ray diffraction (XRD) measurements were performed to identify their crystal structure. Morphology and surface shape of the catalysts were observed by scanning electron microscopy (SEM) and transmission electron microscopy (TEM). Surface area and pore volume were examined by nitrogen adsortpion & desorption tests and X-ray photoelectron spectroscopy (XPS) was conducted to confirm nitrogen doping. Linear sweep voltammetry (LSV) was carried out to investigate OER activity of $Co_3O_4$ catalysts. As a result, bare-$Co_3O_4$ which has high surface area and small particle size determined by spray pyrolysis showed high activity toward OER.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.11-11
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• 2008

ZnO has a very large exciton binding energy (60 meV) as well as thermal and chemical stability, which are expected to allow efficient excitonic emission, even at room temperature. ZnO based electronic devices have attracted increasing interest as the backplanes for applications in the next-generation displays, such as active-matrix liquid crystal displays (AMLCDs) and active-matrix organic light emitting diodes (AMOLEDs), and in solid state lighting systems as a substitution for GaN based light emitting diodes (LEDs). Most of these electronic devices employ the electrical behavior of n-type semiconducting active oxides due to the difficulty in obtaining a p-type film with long-term stability and high performance. p-type ZnO films can be produced by substituting group V elements (N, P, and As) for the O sites or group I elements (Li, Na, and K) for Zn sites. However, the achievement of p-type ZnO is a difficult task due to self-compensation induced from intrinsic donor defects, such as O vacancies (Vo) and Zn interstitials ($Zn_i$), or an unintentional extrinsic donor such as H. Phosphorus (P) doped ZnO thin films were grown on c-sapphire substrates by radio frequency magnetron sputtering with various Ar/ $O_2$ gas ratios. Control of the electrical types in the P-doped ZnO films was achieved by varying the gas ratio with out post-annealing. The P-doped ZnO films grown at a Ar/ $O_2$ ratio of 3/1 showed p-type conductivity with a hole concentration and hole mobility of $10^{-17}cm^{-3}$ and $2.5cm^2/V{\cdot}s$, respectively. X-ray diffraction showed that the ZnO (0002) peak shifted to lower angle due to the positioning of $p^{3-}$ ions with a smaller ionic radius in the $O^{2-}$ sites. This indicates that a p-type mechanism was due to the substitutional Po. The low-temperature photoluminescence of the p-type ZnO films showed p-type related neutral acceptor-bound exciton emission. The p-ZnO/n-Si heterojunction LEO showed typical rectification behavior, which confirmed the p-type characteristics of the ZnO films in the as-deposited status, despite the deep-level related electroluminescence emission.