• Title/Summary/Keyword: Orbital Forming

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A Study on Development of Pinhead Forming Process using Hinge Belt Typed Chipconveyor for Machine Tools (공작기계용 힌지벨트형 칩컨베이어 핀헤드 성형공정 개발에 관한 연구)

  • Park, Dong-Geun;Choi, Chi-Hyuk;Lee, Choon-Man
    • Journal of the Korean Society for Precision Engineering
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    • v.27 no.4
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    • pp.27-32
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    • 2010
  • This paper presents an investigation into the pinhead forming process with the objective of finding the optimal forming conditions. In order to this, the orbital forming analysis of a heading MIG was carried out using the explicit finite element method. Relationships between temperature by forming of load and stresses, rake angle by forming final shape and stress distribution were investigated through analysises in order to find an efficient solution. As a result, the higher temperature and orbital rake angle were the better forming conditions.

Finite Element Analysis of Orbital Forming Process in Bearing Manufacturing (베어링 제조공정중 궤도단조공정의 유한요소해석)

  • Moon H. K.;Lee M. C.;Chung J. H.;Joun M. S.
    • Transactions of Materials Processing
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    • v.14 no.1 s.73
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    • pp.29-36
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    • 2005
  • In this paper, a useful rigid-plastic finite element method with various numerical schemes is presented for simulation of an orbital forming process. A new approach to reduce volume change during simulation is presented and an approximation method to reduce computational time is also presented. An actual orbital forming process found in a bearing making industry is simulated by the presented approach. The simulated results of the orbital forming process are compared with the experimental results.

A Study on Orbital Forming Analysis of Automotive Hub Bearing using the Explicit Finite Element Method (외연적 유한요소법을 이용한 자동차 Hub Bearing의 Orbital Forming해석에 관한 연구)

  • Cho, Hyun-Jik;Koo, Jeong-Seo;Bae, Won-Rak;Lim, Jong-Soon
    • Transactions of the Korean Society of Automotive Engineers
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    • v.16 no.1
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    • pp.29-36
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    • 2008
  • In this paper, the orbital forming analysis of an automotive hub bearing was studied to predict forming performances using the explicit finite element method. To find an efficient solution technique for the orbital forming, axisymmetric finite element models and 3D solid element models were solved and numerically compared. The time scaling and mass scaling techniques were introduced to reduce the excessive computational time caused by small element size in case of the explicit finite element method. It was found from the numerical simulations on the orbital forming that the axisymmetric element models showed the similar results to the 3D solid element models in forming loads whereas the deformations at the inner race of bearing were quite different. Finally the strains at the inner race of bearing and the forming forces to the peen were measured for the same product of the numerical model by test, and were compared with the 3D solid element results. It was founded that the test results were in good agreements with the numerical ones.

Optimization of Hot Forging Process of Flange Type Wheel Bearings by Statistical Technique (통계적 기법을 활용한 플랜지형 휠베어링의 열간단조 공정 최적화)

  • Lee, J.S.;Moon, H.K.;Song, B.H.;Hur, B.Y.
    • Proceedings of the Korean Society for Technology of Plasticity Conference
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    • 2006.05a
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    • pp.434-437
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    • 2006
  • Due to the shape of spindle with small diameter and heavy section, rapid cooling is difficult. It is difficult to fabricate the tapered wheel bearings with fine microstructure. Thus, their mechanical characteristics, such as yield strength and fatigue resistance, decrease. Producing the tapered wheel bearings with good workability during orbital forming after hot forging, hot forging process with several process parameters was optimized by means of statistical technique of Six-Sigma scheme. As a result, the lower heating temperature is, the lower the hardness and yield strength of forgings are. Also, the faster conveyer velocity is, the lower the hardness and yield strength of forgings are. To avoid therefore occurrence of the surface rupture during orbital forming, the heating temperature should be controlled as low as possible and the conveyer velocity should be controlled as fast as possible.

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Fitting Pipe Flange Process Research Using Orbital Forming (오비탈 성형을 이용한 피팅 파이프 플랜지 공정연구)

  • Kim, TaeGual;Park, JoonHong;Park, YoungChul
    • Journal of the Korean Society of Manufacturing Process Engineers
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    • v.14 no.6
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    • pp.57-62
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    • 2015
  • A large variety of pipe flanges are required in the marine and construction industry. Pipe flanges are usually welded or screwed to the pipe end and are connected with bolts. This approach is very simple and has been widely used for a long time; however, it results in high development costs and low productivity, and the products made through this approach usually have safety problems in the welding area. In this research, a new approach for forming pipe flanges based on cold forging and the floating die concept is presented. This innovative approach increases the effectiveness of the material usage and saves time and costs compared with the conventional welding method. To ensure the dimensional accuracy of the final product, finite element analysis (FEA) was carried out to simulate the process of cold forging, and orthogonal experiment methods were used to investigate the influence of four manufacturing factors (stroke of distance, pin die angle, forming of pipe diameter, and speed of the die) and predict the best combination of them. The manufacturing factors were obtained through numerical and experimental studies, which show that the approach is very useful and effective for the forming of pipe flanges and could be widely used in the future.

Ab Initio Study of Mechanism of Forming Spiro-Heterocyclic Ring Compound Involving Si and Ge from Dichlorosilylene Germylidene (Cl2Si-Ge:) and Acetone

  • Liu, Dongting;Ji, Hua;Lu, Xiuhui
    • Bulletin of the Korean Chemical Society
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    • v.33 no.12
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    • pp.4079-4083
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    • 2012
  • The mechanism of the cycloaddition reaction between singlet state dichlorosilylene germylidene ($Cl_2Si=Ge:$) and acetone has been investigated with B3LYP/6-$31G^*$ and B3LYP/6-$31G^{**}$ method, from the potential energy profile, we predict that the reaction has one dominant reaction pathway. The presented rule of the reaction is that the two reactants firstly form a Si-heterocyclic four-membered ring germylene through the [2+2] cycloaddition reaction. Because of the 4p unoccupied orbital of Ge atom in the Si-heterocyclic four-membered ring germylene and the ${\pi}$ orbital of acetone forming a ${\pi}{\rightarrow}p$ donor-acceptor bond, the Si-heterocyclic four-membered ring germylene further combines with acetone to form an intermediate. Because the Ge atom in the intermediate hybridizes to an $sp^3$ hybrid orbital after the transition state, then, the intermediate isomerizes to spiro-heterocyclic ring compound involving Si and Ge (P4) via a transition state.

Development of Rotary Forging Press with Multi-Rocking Motion (다운동 방식 회전단조기 개발)

  • 이윤우;김소겸;최상수;박준수;김윤배;임성주;윤덕재;김승수;박훈재
    • Proceedings of the Korean Society for Technology of Plasticity Conference
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    • 1995.06a
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    • pp.47-54
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    • 1995
  • Rotary forging process has many advantages such as compacting of machine, low price of facilities and good quality of products. The last presented was a technical report about rotary forging press in the 100-ton class, which has the only orbital motion limited to the forming of axisymmetric parts. In this paper, the newly developed rotary forging press is introduced. The maximum capacity of forming load is 280 ton and five locking motion, this is, orbital, straight pivot, spiral and two kinds of clover can be available. This machine consists of transmission, double eccentric bush, rocking shaft, die set and hydraulic unit. Especially, the supports of rocking shaft and double eccentric bush are so crucial that hydrostatic bearings are adopted. Finally, it is expected that the technical know-how obtained in this research can be applied to the manufacturing of the another machine with large capacity.

Ab Initio Study of Mechanism of Forming Spiro-Ge-Heterocyclic Ring Compound From C2Ge=Ge: and Formaldehyde

  • Lu, Xiuhui;Li, Yongqing;Ming, Jingjing
    • Bulletin of the Korean Chemical Society
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    • v.34 no.12
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    • pp.3690-3694
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    • 2013
  • The $H_2Ge=Ge:$ and its derivatives ($X_2Ge=Ge:$, X = H, Me, F, Cl, Br, Ph, Ar${\ldots}{\ldots}$) is a new species. Its cycloaddition reactions is a new area for the study of germylene chemistry. The mechanism of the cycloaddition reaction between singlet state Cl2Ge=Ge: and formaldehyde has been investigated with CCSD(T)//MP2/$6-31G^*$ method. From the potential energy profile, it could be predicted that the reaction has only one dominant reaction pathway. The reaction rule presented is that the two reactants first form a fourmembered Ge-heterocyclic ring germylene through the [2+2] cycloaddition reaction. Because of the 4p unoccupied orbital of Ge: atom in the four-membered Ge-heterocyclic ring germylene and the ${\pi}$ orbital of formaldehyde forming a ${\pi}{\rightarrow}p$ donor-acceptor bond, the four-membered Ge-heterocyclic ring germylene further combines with formaldehyde to form an intermediate. Because the Ge: atom in intermediate hybridizes to an $sp^3$ hybrid orbital after transition state, then, intermediate isomerizes to a spiro-Ge-heterocyclic ring compound via a transition state. The research result indicates the laws of cycloaddition reaction between $H_2Ge=Ge:$ and formaldehyde, and laid the theory foundation of the cycloaddition reaction between $H_2Ge=Ge:$ and its derivatives ($X_2Ge=Ge:$, X = H, Me, F, Cl, Br, Ph, Ar${\ldots}{\ldots}$) and asymmetric ${\pi}$-bonded compounds, which is significant for the synthesis of small-ring and spiro-Ge-heterocyclic compounds. The study extends research area and enriches the research content of germylene chemistry.

Organic Thin-Film Transistors with Polymer Buffer Layer (고분자 완충층을 이용한 유기박막트랜지스터)

  • Choi, Hak-Bum;Hyung, Gun-Woo;Park, Il-Houng;Hwang, Seon-Wook;Kim, Young-Kwan
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2008.06a
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    • pp.182-183
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    • 2008
  • We fabricated a pentacene thin film transistor with Poly-vinylalcohol (PVA) as a dielectric. And we used Poly(9-vinylcarbazole) (PVK) as a buffer layer to improve the electrical characteristics. PVK is a material used often host material for OLED device, as it has good film forming properties, large HOMO-LUMO(highest occupied molecular orbital-lowest unoccupied molecular orbital) bandgap. The performance of a OTFT device with PVA gate dielectric was improved by using the PVK. Field effect mobility, threshold voltage, and on-off current ratio of device with PVK layer were about 0.6 $cm^2$/Vs, -17V, and $5\times10^5$, respectively.

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