• Title/Summary/Keyword: Optoelectronic feedback

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Visible Light Identification System Using Optoelectronic Feedback of A Lighting LED (조명용 LED의 광전궤환을 이용한 가시광 무선인식장치)

  • Lee, Seong-Ho
    • Journal of Sensor Science and Technology
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    • v.20 no.3
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    • pp.193-198
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    • 2011
  • In this paper, we used optoelectronic feedback to generate the carrier frequency for the ASK modulation of a lighting LED. A solar cell was used for photo-detector in the feedback circuit, and the LED light was ASK modulated by controlling the ON/OFF state of the switch that is installed in the feedback loop. The oscillation frequency of the optoelectronic feedback loop was about 50 kHz and the data rate of the ASK modulation was 9.6 kbps. In experiments, the optoelectronic feedback circuit was used for the ASK modulation of a lighting LED in the transponder of a visible light identification system, and data exchange between the transponder and the reader was successfully carried out.

Reducing the Effects of Noise Light in an Wireless Optical Communication Using Optoelectronic Feedback (무선 광통신에서 광전 궤환을 이용한 잡음 광의 영향 감소)

  • Hwang, Da-Hyun;Lee, Seong-Ho
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.21 no.10
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    • pp.1136-1142
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    • 2010
  • In this paper, we reduced the optical noise interference using the ASK modulation with optoelectronic feedback in a wireless optical system in which a lighting LED is used as a light source. The carrier frequency of 70 kHz was generated internally by the oscillation in the optoelectronic feedback circuit, and the output light was ASK modulated at a data rate of 9.6 kbps by opening and shortening the feedback loop with the input signal. In an environment with adjacent noise lights, the ASK modulation with optoelectronic feedback improved the signal to noise ratio by about 25 dB.

Self-pulsing, Bistablilty, and Chaos in a Laser Diode with Delayed Optoelectronic Feedback (지연 광전궤환이 가해진 레이저 다이오드에서의 자기발진, 쌍안정성 및 혼돈)

  • 이창희
    • Proceedings of the Optical Society of Korea Conference
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    • 1989.02a
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    • pp.107-112
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    • 1989
  • We observe experimentally self-pulsing, subharmonic generation, spectral bistability, and chaos in a stable laser diode with delayed optoelectronic feed-back. The laser diode emits 200 ps optical pulses with 1.1 GHz repetition rate in the self-pulsing region. The bistable region critically depends on the closed loop gain of the system. We also explain observed experimental result.

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Self-Pulsation in Multisection Distributed Feedback Laser Diode with a Novel Dual Grating Structure

  • Park, Kyung-Hyun;Leem, Young-Ahn;Yee, Dae-Su;Baek, Yong-Soon;Kim, Dong-Churl;Kim, Sung-Bock;Sim, Eun-Deok
    • ETRI Journal
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    • v.25 no.3
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    • pp.149-155
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    • 2003
  • A self-pulsating multisection distributed-feedback laser diode (DFB LD) can potentially realize all-optical clock extraction. This device generally consists of three sections, two DFB sections and one waveguide section. The most important variable in this device is detuning, which is the relative spectral position between the stop bands of two DFB sections. We fabricated a novel structure in which two gratings were located one over and one under the active layers. Each grating structure was independently defined in processing so that detuning, which is the prerequisite for self-pulsation, could be easily controlled. Observing various self-pulsating phenomena in these devices under several detuning conditions, we characterized the phenomena as dispersive Q-switching, mode beating, and self-mode-locking.

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High-Density Quantum Nanostructure for Single Mode Distributed Feedback Semiconductor Lasers by One-Step Growth (단일 공정에 의한 고효율 단일모드 반도체 레이저 구조 제작을 위한 고밀도 양자 나노구조 형성)

  • Son, Chang-Sik;Baek, Jong-Hyeob;Kim, Seong-Il;Park, Young-Ju;Kim, Yong-Tae;Choi, Hoon-Sang;Choi, In-Hoon
    • Korean Journal of Materials Research
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    • v.13 no.8
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    • pp.485-490
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    • 2003
  • We have developed a new way of the constant growth technique to maintain a grating height of originally-etched V-groove of submicron gratings up to 1.5 $\mu\textrm{m}$ thickness by a low pressure metalorganic chemical vapor deposition. The constant growth technique is well performed on two kinds of submicron gratings that made by holography and electron (e)-beam lithography GaAs buffer layer grown on thermally deformed submicron gratings has an important role in recovering the deformed grating profile from sinusoidal to V-shaped by reducing mass transport effects. The thermal deformation effect on submicron gratings made by e-beam lithography is less than that on submicron gratings made by holography. The constant growth technique is an important step to realize complex optoelectronic devices such as one-step grown distributed feedback lasers and two-dimensional photonic crystals.

Quantum Nanostructure of InGaAs on Submicron Gratings by Constant Growth Technique

  • Son, Chang-Sik
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.14 no.12
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    • pp.1027-1031
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    • 2001
  • A new constant growth technique to conserve an initial grating height of V-groove AlGaAs/InGaAs quantum nanostructures above 1.0 $\mu\textrm{m}$ thickness has been successfully embodied on submicron gratings using low pressure metalorganic chemical vapor deposition. A GaAs buffer prior to an AlGaAs barrier layer on submicron gratings plays an important role in overcoming mass transport effects and improving the uniformity of gratings. Transmission electron microscopy (TEM) image shows that high-density V-groove InGaAs quantum wires (QWRs) are well confined at the bottom of gratings. The photoluminescence (PL) peak of the InGaAs QWRs is observed in the temperature range from 10 to 280 K with a relatively narrow full width at half maximum less than 40 meV at room temperature PL. The constant growth technique is an important step to realize complex optoelectronic devices such as one-step grown distributed feedback lasers and two-dimensional photonic crystal.

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High-linearity enhancement of optical transmitter using optoelectronic predistortion method (광전자 프리디스토션 기법을 적용한 광 송신기의 높은 선형성 향상 특성)

  • Lee, Tae-Kyeong;Moon, Yon-Tae;Choi, Young-Wan
    • 한국정보통신설비학회:학술대회논문집
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    • 2008.08a
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    • pp.296-299
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    • 2008
  • 최근 통신시스템과 핸드폰, PDA등의 통신기기들의 발전에 따라 사용자들은 높은 데이터 전송률과 고속의 통신서비스를 요구하고 있다. 이러한 상황에서 유 무선 통합 시스템인 Radio-over-Fiber(RoF) 시스템은 그 대안으로 대두되고 있다. 본 논문에서는 광전자소자를 선 왜곡 방식에 적용하여 광 송신기의 선형성을 향상시키는 방법을 제안하였다. 선 왜곡 방식은 두 개의 루프로 구성되어 있으며, 광 부품인 레이저 다이오드와 포토 다이오드 그리고 RF 부품인 위상변위기, 감쇄기, RF 결합/분배기, RF 증폭기를 사용하였다. 메인 루프에서 주 레이저 다이오드의 비선형성에 의해 발생된 왜곡신호성분은 보조 루프에서 부 레이저 다이오드를 이용하여 추출된 선 왜곡신호에 의해서 제거된다. 제안된 선형화 기법을 적용하여 2.4 GHz에서 선형화 기법을 적용하기 전보다 3차 상호변조 왜곡성분이 약 30dB 향상된 결과를 얻었다.

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A Wide-range Tunable Wavelength-stabilization Technique for Semiconductor Lasers

  • Chen, Han;Qiao, Qinliang;Min, Jing;He, Cong;Zhang, Yuanyuan
    • Current Optics and Photonics
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    • v.5 no.4
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    • pp.384-390
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    • 2021
  • This paper presents a wide-range tunable wavelength-locking technology based on optoelectronic oscillation (OEO) loops for optical fiber sensors and microwave photonics applications, explains the theoretical fundamentals of the design, and demonstrates a method for locking the relative wavelength differences between a leader semiconductor laser and its follower lasers. The input of the OEO loop in the proposed scheme (the relative wavelength difference) determines the radio-frequency (RF) signal frequency of the oscillation output, which is quantized into an injection current signal for feedback to control the wavelength drift of follower lasers so that they follow the wavelength change of the leader laser. The results from a 10-hour continuous experiment in a field environment show that the wavelength-locking accuracy reached ±0.38 GHz with an Allan deviation of 6.1 pm over 2 hours, and the wavelength jitter between the leader and follower lasers was suppressed within 0.01 nm, even though the test equipment was not isolated from vibrations and the temperature was not controlled. Moreover, the tunable range of wavelength locking was maintained from 10 to 17 nm for nonideal electrical devices with limited bandwidth.

Measurement of the ICRH antenna phasing using antenna strap probe based diagnostic system in EAST tokamak

  • Liu, L.N.;Liang, Q.C.;Yang, H.;Zhang, X.J.;Yuan, S.;Mao, Y.Z.;Zhang, W.;Zhu, G.H.;Wang, L.;Qin, C.M.;Zhao, Y.P.;Cheng, Y.;Zhang, K.
    • Nuclear Engineering and Technology
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    • v.54 no.10
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    • pp.3614-3619
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    • 2022
  • To operate the ion cyclotron resonance heating (ICRH) antennas in a better heating state and produce relatively low impurities, it is necessary to control the antenna spectrum by changing the antenna phasing. As the electrical length of the antenna feeding transmission lines is changing as a matter of the standing wave pattern at the ceramic supports, 90° elbows, T-connectors and antenna loops, we chose to measure the current at the grounding points of the antenna loops by antenna strap probe. The voltage drops along a small, several millimeter-long paths at the end of the antenna loops give a signal that is proportional to the current in the antenna loop. Through the simulation of the antenna strap probe and the actual measurement of the antenna phasing under vacuum conditions, the reliability of the antenna strap probe based diagnostic system have been successfully proved. Moreover, this system was successfully applied to the ICRH daily experiments in the spring of 2021. In the near future, the active real-time feedback control of the antenna phasing system will be developed based on this diagnostic system in the EAST tokamak.