• Proceedings of the Korean Society of Dyers and Finishers Conference
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• 2011.03a
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• pp.63-63
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• 2011

The donor-${\pi}$-acceptor (D-${\pi}$-A) chromophoric dye system has received great attention in variety fields such as electroluminescent materials, sensors and optoelectronic devices. There are many research activities focused on the development for abovementioned application materials with the high-performance properties. In the previous work, we are reported that novel D-${\pi}$-A dye, 2-[4-(9H-carbazol-9-yl)benzylidene]-2,3-dihydroinden-1-one, is successfully attained and exhibited a positive fluorescence solvatochromism. In this work, the molecular structure and packing geometry of 2-[4-(9H-carbazol-9-yl)benzylidene]-2,3-dihydroinden-1-one was discussed by their conformational structure. Their single yellow prism crystal having approximate dimensions of $0.30{\times}0.10{\times}0.10$ mm was carried out with a Rigaku RAXIS RAPID imaging plate area detector with graphite monochromated $CuK_{\alpha}$ radiation. Their crystal structure were solved by using the CrystalStructure crystallographic software package.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.11a
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• pp.120-120
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• 2003

The metallic oxide nanomaterials including ZnO, Ga$_2$O$_3$, TiO$_2$, and SnO$_2$ have been synthesized by a number of methods including laser ablation, arc discharge, thermal annealing procedure, catalytic growth processes, and vapor transport. We have been interested in preparing the nanomaterials of Ga$_2$O$_3$, which is a wide band gap semiconductor (E$_{g}$ =4.9 eV) and used as insulating oxide layer for all gallium-based semiconductor. Ga$_2$O$_3$ is stable at high temperature and a transparent oxide, which has potential application in optoelectronic devices. The Ga$_2$O$_3$ nanoparticles and nanobelts were produced using GaN single crystals, which were grown by flux method inside SUS$^{TM}$ cell using a Na flux and exhibit plate-like morphologies with 4 ~ 5 mm in size. In these experiments, the conventional electric furnace was used. GaN single crystals were pulverized in form of powder for the growth of Ga$_2$O$_3$ nanomaterials. The structure, morphology and composition of the products were studied mainly by X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), and high-resolution transmission electron microscopy (HRTEM).).

• Proceedings of the Polymer Society of Korea Conference
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• 2006.10a
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• pp.304-304
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• 2006

The possibility to develop optoelectronic devices with improved properties by controlling the degree of organization at the molecular level of organic materials has been driving the design of new ${\pi}-conjugated$ systems. In particular, the organization by self-assembling processes (${\tilde{\Box}}{\d{\Box}}}$ interactions, hydrogen bonding) of well-defined oligomeric systems such as disubstituted oligothiophene derivatives has been demonstrated as a promising approach to conjugated materials with a high degree of structural order of the constituent building blocks. The self-organization of conjugated building blocks in solution or on surfaces, leading to the construction of nanoscopic and mesoscopic architectures, represents a starting point for the construction of molecular electronics or even circuits, through surface patterning with nanometer-sized objects.

• Korean Journal of Optics and Photonics
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• v.13 no.2
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• pp.128-133
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• 2002

In a recent effort to develop polymer light-emitting diodes (LEDs) as promising flat panel display components, measurements of reliable absolute photoluminescence (PL) and electroluminescence (EL) efficiency for polymer materials are required. In this work, we performed the measurement of PL and EL efficiency of luminescent polymers using an integrating sphere technique. The external PL efficiency of MEH-PPV was estimated to be 8 ($\pm$2)% together with the value of 0.02 1m/W for the external EL efficiency. This PL efficiency is in good agreement with published values, indicating that our PL efficiency measurements are somewhat legitimate. We believe this study might contribute to the research and development of organic materials for optoelectronic devices.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07b
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• pp.1534-1535
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• 2005

Highly luminescent efficiency phosphors have been successfully produced by surface modification and microwave irradiation treatment. The SEM image and XRD analysis reveal that the surface morphology of the white-light phosphors can be notably modified by microwave irradiation and exhibit with better crystalline property. The VUV PL spectra show that the microwave irradiation treatment can effectively enhance the luminescent efficiency by a factor of 1.5 times for intensity compared to that without microwave treatment. A further improvement in all visible emission can be made by modifying surface composition through MgO coating on the phosphor powder. These results demonstrate that such a simple approach can provide for improving luminescent efficiency of phosphors for the optoelectronic devices.

• Journal of Hydrogen and New Energy
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• v.16 no.2
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• pp.130-135
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• 2005

Cadmium selenide is one of the group IIb-VI compounds, which is the promising semiconductor material due to its wide range of technological applications in optoelectronic devices such as photoelectrochemical cells, solid state solar cells, thin film photoconductors etc. CdSe has optical band gap of 1.7-1.8eV and proper conduction band edge for water splitting. CdSe films are coated with small thickness(20-50nm) nanocrystalline $TiO_2$ film by electrodeposition or chemical bath deposition methods and PEC properties of CdSe and CdSe/$TiO_2$ sandwich structure are studied. The photoactivity of CdSe and CdSe/$TiO_2$ films deposited on titanium substrate is studied in aqueous electrolyte of 1M NaOH solution. Photocurrent and photovoltage obtained were of the order of 2-4 mA/$cm^2$ and 0.5V, respectively, under the intensity of illumination of 100 mW/$cm^2$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07b
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• pp.857-860
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• 2003

Tin doped indium oxide(ITO) and Al doped zinc oxide(ZnO:Al) films, which are widely used as a transparent conductor in optoelectronic devices such as solar cell, liquid crystal display, plasma display panel, thermal heater, and other sensors, were prepared by using the capacitively coupled DC magnetron sputtering method. The electrical and optical properties of both the ITO and ZnO:Al thin films were investigated as functions of substrate temperature, working gas pressure and deposition time. ITO and ZnO:Al films with the the present experimental conditions of temperature and pressure showed resistivity of $2.36{\times}10^{-4}{\Omega}-cm,\;9.42{\times}10^{-4}{\Omega}-cm$ and transmittance of 86.28%, 90.88% in the wavelength range of the visible spectrum, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07b
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• pp.969-972
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• 2004

Al doped Zinc Oxide(ZnO:Al) films, which is widely used as a transparent conductor in optoelectronic devices such as solar cell, liquid crystal display, plasma display panel, thermal heater, and other sensors, were prepared by using the capacitively coupled DC magnetron sputtering method. In this paper the effect of doping amounts of $Al_2O_3$ on the electrical, optical and morphological properties were investigated experimentally, The results show that the structural and electrical properties of the film are highly affected by the doping. The optimum growth conditions were obtained for films doped with 2 wt% of Al203 which exhibit a resistivity of $8.5{\times}10^{-4}{\Omega}-cm$ associated with a transmittance of 91.7 % for 840 nm in film thickness in the wavelength range of the visible spectrum.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.297-297
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• 2010

Transparent conductive Oxide (TCO) is an essential material in the various optoelectronic applications as a transparent electrode, such as solar cells, flat panel displays and organic light emitting diodes. Currently, Indium tin oxide (ITO) is commonly used in industry due to its low electrical resistivity, high transmittance and high adhesion to substrate. However, ITO is expensive and should be prepared at high temperature, which makes it hard to use ITO in flexible devices. In this regard, Ga-doped ZnO is expected as an ideal candidate for replacing ITO.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.1
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• pp.1-6
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• 2011

Optical gain characteristics of $1.3{\mu}m$ type-II GaAsSb/InGaNAs/GaAs trilayer quantum well structures were studied using multi-band effective mass theory. The results were compared with those of $1.3{\mu}m$ GaAsSb/InGaNAs/GaAs trilayer quantum well structures. In the case of $1.3{\mu}m$ GaAsSb/InGaNAs/GaAs trilayer quantum well structure, the energy difference between the first two subbands in the valence band is smaller than that of $1.3{\mu}m$ GaAsSb/InGaNAs/GaAs trilayer quantum well structure. Also, $1.3{\mu}m$ GaAsSb/InGaNAs/GaAs trilayer quantum well structure shows larger optical gain than $1.3{\mu}m$ GaAsSb/InGaNAs/GaAs trilayer quantum well structure. This means that GaAsSb/InGaNAs/GaAs system is promising as long-wavelength optoelectronic devices for optical communication.