• Journal of the Korean Chemical Society
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• v.57 no.4
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• pp.489-492
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• 2013

N-doped $TiO_2$ microcuboids were successfully prepared by a simple one-pot hydrothermal method. The samples were characterized by X-ray diffraction, scanning electron microscopy, diffuse reflectance spectroscopy, and X-ray photoelectron spectroscopy. It was found that the N-doped $TiO_2$ microcuboids enhanced absorption in the visible light region, and exhibited higher activity for photocatalytic degradation of model dyes. Based on the experimental results, a visible light induced photocatalytic mechanism was proposed for N-doped anatase $TiO_2$ microcuboids.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.35 no.3
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• pp.215-222
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• 2022

Artificial neuromorphic devices are considered the key component in realizing energy-efficient and brain-inspired computing systems. For the artificial neuromorphic devices, various material candidates and device architectures have been reported, including two-dimensional materials, metal-oxide semiconductors, organic semiconductors, and halide perovskite materials. In addition to conventional electrical neuromorphic devices, optoelectronic neuromorphic devices, which operate under a light stimulus, have received significant interest due to their potential advantages such as low power consumption, parallel processing, and high bandwidth. This article reviews the recent progress in optoelectronic neuromorphic devices using various active materials such as two-dimensional materials, metal-oxide semiconductors, organic semiconductors, and halide perovskites

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.27-32
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• 2006

The present status and prospects for further development of thin-film electroluminescent (TFEL) devices using oxide phosphors are described. High-luminance oxide TFEL devices have been recently developed using a new combinatorial deposition technique featuring rf magnetron sputtering with a subdivided powder target. In addition, new flexible oxide TFEL devices have been fabricated on an oxide ceramic sheet and operated stably in air above $200^{\circ}C$.

• ETRI Journal
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• v.34 no.3
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• pp.361-368
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• 2012

A complete high-frequency small-signal circuit model of a 40 Gb/s butterfly electroabsorption modulator integrated laser module is presented for the first time to analyze and optimize its electro-optic (E/O) response and reflection characteristics. An agreement between measured and simulated results demonstrates the accuracy and validity of the procedures. By optimizing the bonding wire length and the impedance of the coplanar waveguide transmission lines, the E/O response increases approximately 5% to 15% from 20 GHz to 33 GHz, while the signal injection efficiency increases from approximately 15% to 25% over 18 GHz to 35 GHz.

• ETRI Journal
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• v.25 no.3
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• pp.149-155
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• 2003

A self-pulsating multisection distributed-feedback laser diode (DFB LD) can potentially realize all-optical clock extraction. This device generally consists of three sections, two DFB sections and one waveguide section. The most important variable in this device is detuning, which is the relative spectral position between the stop bands of two DFB sections. We fabricated a novel structure in which two gratings were located one over and one under the active layers. Each grating structure was independently defined in processing so that detuning, which is the prerequisite for self-pulsation, could be easily controlled. Observing various self-pulsating phenomena in these devices under several detuning conditions, we characterized the phenomena as dispersive Q-switching, mode beating, and self-mode-locking.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.67-67
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• 2012

Graphene, two-dimensional one-atom-thick planar sheet of carbon atoms densely packed in a honeycomb crystal lattice, exhibits fascinating electrical properties, such as a linear energy dispersion relation and high mobility in addition to a wide-range optical absorption and high thermal conductivity. Graphene's outstanding tensile strength allows graphene-based electronic and photonic devices to be flexible, bendable, or even stretchable. Recently many groups have reported high performance electronic and optoelectronic devices based on graphene materials, i.e. field-effect transistors, gas sensors, nonvolatile memory devices, and plasmonic waveguides, in which versatile properties of graphene materials have been incorporated into a flexible electronic or optoelectronic platform. However, there are several fundamental or technological hurdles to be overcome in real applications of graphene in electronics and optoelectronics. In this tutorial we will present a short introduction to the basic material properties and recent progresses in applications of graphene to electronics and optoelectronics and discuss future outlook of graphene-based devices.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.1010-1013
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• 2006

To understand the exact charge carrier photogeneration properties of photoactive thin films consisting of a ${\pi}-conjugated$ polymer matrix and a triplet dopant, we prepared two types of polymer, poly(9-vinylcarbazole) (PVK) and poly[9,9-bis(2- ethylhexyl)fluorene-2,7-diyl] (PF2/6) doped with triplet emitters for organic light-emitting diodes (OLED), either iridium(III)fac-tris(2-phenylpyridine) $(Ir(ppy)_3)$ or iridium(III)bis[(4,6-fluorophenyl)- $pyridinato-N,C^2'$]picolinate (FIrpic), as thin film devices by using the conventional method. Those doped film devices, as well as pristine film devices, on ITO substrates were characterized by means of steady state photocurrent measurement for a wide spectral range.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.6-6
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• 2011

Graphene, a monlayer of carbon atoms arrange to form a 2-dimensional honeycomb lattice, exhibits enormous fascinating properties, such as a linear energy dispersion relation, a wide-range optical absorption, high thermal conductivity, and mechanical flexibility [1]. Because the unique material properties of graphene allow it to be a promising building block for the next generation electronic and optoelectronic devices, sometimes graphene-based devices have refereed to be a strong candidate to overcome the intrinsic limitations of conventional semiconductor-based technology [2,3]. However, there are several fundamental or technological hurdles to be overcome in real applications of graphene in electronics and optoelectronics. In this tutorial we will present a short introduction to the basic materials properties and recent progress in applications of graphene and discuss future outlook of graphene-based electronic and optoelectronic devices.

• Korean Journal of Materials Research
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• v.20 no.9
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• pp.483-487
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• 2010

To fabricate $TiO_2$ nanoparticle-based dye sensitized solar cells (DSSCs) at a low-temperature, DSSCs were fabricated using hydropolymer and ZnO nanoparticles composites for the electron transport layer around a low-temperature ($200^{\circ}C$). ZnO nanoparticle with 20 nm and 60 nm diameter were used and Pt was deposited as a counter electrode on ITO/glass using an RF magnetron sputtering. We investigate the effect of ZnO nanoparticle concentration in hydropolymer and ZnO nanoparticle solution on the photoconversion performance of the low temperature fabricated ($200^{\circ}C$) DSSCs. Using cis-bis(isothiocyanato)bis(2,20 bipyridy1-4,40 dicarboxylato) ruthenium (II) bis-tetrabutylammonium (N719) dye as a sensitizer, the corresponding device performance and photo-physical characteristics are investigated through conventional physical characterization techniques. The effect of thickness of the ZnO photoelectrode and the morphology of the ZnO nanoparticles with the variations of hydropolymer to ZnO ratio on the photoconversion performance are also investigated. The morphology of the ZnO layer after sintering was examined using a field emission scanning electron microscope (FE-SEM). 60 nm ZnO nanoparticle DSSCs showed an incident photon-to-current conversion efficiency (IPCE) value of about 7% higher than that of 20 nm ZnO nanoparticle DSSCs. The maximum parameters of the short circuit current density ($J_{sc}$), the open circuit potential ($V_{oc}$), fill factor (ff), and efficiency ($\eta$) in the 60 nm ZnO nanoparticle-based DSSC devices were 4.93 mA/$cm^2$, 0.56V, 0.40, and 1.12%, respectively.

• Proceedings of the Optical Society of Korea Conference
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• 2004.02a
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• pp.186-187
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• 2004