• 한국전기전자재료학회논문지
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• 제11권8호
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• pp.637-645
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• 1998

The characteristics of waveguide, electrode and packaging fabricated for acousto-optic tunable filters(AOTF) used for optical communications were analyzed. A $Ti:LiNbO_3$in-diffusing method was employed for the formation of the optical waveguide with a dimension of width $8{\mu}m$, length $30000-50000{\mu}m$ and varying the thickness. The diffusion was carried at $1050^{\circ}C$ for 8 hours to pattern the optical waveguide. The resulted waveguide exhibited a single mode at 1550nm optical wavelength. The width of IDT, with 10 SAM periods, was $5000{\mu}m$ . Impedances of the electrodes deposited with Au were analyzed using a network analyzer; $48.1\Omega$ at the center frequency of 193MHz for electrode thickness of $1500{\AA}$ and $50.7\Omega$ at the center frequency of 192MHz for $1600\AA$. And the characteristics of packaged AOTF was analyzed. When the electrical frequency 177.1MHz was applied to the device, the mode conversion efficiency was measured as 63% at the optical wavelength 1515nm.

• 한국전기전자재료학회논문지
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• 제29권11호
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• pp.685-689
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• 2016

Synthesis of the fluorescent Au nanoclusters is reported. The Au nanoclusters were synthesized via reduction of gold ions in reverse micelles with mild reducing agents. The Au nanoclusters show a bright red emission at 640 nm. The fluorescent Au nanoclusters attract great interest for sensor, electronic device and bio-imaging applications because of ultra-small size, high chemical stablity and bright emission. We believe that the fluorescent Au nanoclusters can have optoelectronic applications such as optical down conversion phosphors.

• 전기학회논문지
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• 제58권7호
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• pp.1386-1392
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• 2009

An analysis is presented for super-high-speed optical demodulation by an avalanche photodiode(APD) with electric mixing. A normalized gain is defined to evaluate the performance of the optical mixing detection. Unlike previous work, we include the effect of the nonlinear variation of the APD capacitance with bias voltage as well as the effect of parasitic and amplifier input capacitance. As a results, the normalized gain is dependent on the signal frequency and the frequency difference between the signal and the local oscillator frequency. However, the current through the equivalent resistance of the APD is almost independent of signal frequency. The mixing output is mainly attributed to the nonlinearity of the multiplication factor. We show also that there is an optimal local oscillator voltage at which the normalized gain is maximized for a given avalanche photodiode.

• 한국광학회:학술대회논문집
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• 한국광학회 2006년도 하계학술발표회 논문집
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• pp.207-208
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• 2006

홈 네트워크를 구성하는 여러 분야 중 우리의 삶을 보다 풍요롭고 편리하게 하는, 멀티미디어와 관련된 홈 엔터테인먼트 분야가 강조되면서, 초고속 대용량 데이터의 원활한 전송이 요구되고 있다. 그러나 기존동선 가입자 선로는 이러한 요구를 수용하기에 그 한계에 다다르고 있다. 이로 인해 각 가정까지 광 가입자 선로가 직접 연결되는 FTTH(Fiber To The Home)에 대한 연구가 활발히 수행되고 있으며, 더 나아가 정보가전기기에 광 가입자 선로를 직접 연결하는 방식으로 그 관심이 확장되고 있다. 본 논문에서는 초고속 대용량 데이터의 전송을 위해 광 가입자 선로와 정보가전기기를 직접 연결시키는 방식에서 사용될 수 있는, 정보가전기기에 on-chip 시킬 수 있는 전/광(광/전) 변환 시스템을 설계하고 간략화하여 구현하였다.

• Journal of the Optical Society of Korea
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• 제12권4호
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• pp.303-308
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• 2008

Directly modulated fiber-optic links generally suffer higher link loss and larger signal distortion than externally modulated links. These result from the electron-photon conversion loss and laser modulation dynamics. As a method to overcome the drawbacks, we have experimentally demonstrated the RF performance of directly modulated, ultra-strong injection-locked gain-lever distributed Bragg reflector (DBR) lasers. The free-running DBR lasers exhibit an improved amplitude modulation efficiency of 12.4 dB under gain-lever modulation at the expense of linearity. By combining gain-lever modulation with ultra-strong optical injection locking, we can gain the benefits of both improved modulation efficiency from the gain-lever effect, plus improved linearity from injection locking. Using an injection ratio of R=11 dB, a 23.4-dB improvement in amplitude response and an 18-dB improvement in spurious-free dynamic range have been achieved.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1992년도 추계학술대회 논문집
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• pp.49-54
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• 1992

Devices of ITO/CdS/CdTe/Te/Al were prepared by Electron-Beam deposition under a vacuum of $7{\times}10^{-6}$[torr]. Optical, Electrical, Structural and Photovoltaic properties of thin film CdS/CdTe at substrate. temperature 300~500[$^{\circ}C$] were also investigated, The structure of CdTe films deposited was of the zincblende type a preferential orientation of the (111) plane parallel to the substrate, the CdTe dark resistivity was about $10^6[{\Omega}cm]$. The conversion, efficiency of the cell increased with increasing substrate temperature. The best-fabricated Cell was a conversion efficiency of 9.1[%].

• 전기의세계
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• 제26권6호
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• pp.72-77
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• 1977

This paper deals with developments of computer programs for college academic affairs using key-punch and optical mark reading card. In order to speed up reading input card, at first O.M.R-Binary conversion is done and written on tape, and then Binary-Edit conversion is performed, so that name rolls of students can be printed within a few days after register at the beginning of the semister. Student's scores, records and various statistics are obtained accurately and quickly by updating, editing and inserting by computer programs developed.

• 한국재료학회지
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• 제21권9호
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• pp.491-496
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• 2011

Transparent conducting oxides (TCOs) used in the antireflection layer and current spreading layer of heterojunction solar cells should have excellent optical and electrical properties. Furthermore, TCOs need a high work function over 5.2 eV to prevent the effect of emitter band-bending caused by the difference in work function between emitter and TCOs. Sn-doped $In_2O_3$ (ITO) film is a highly promising material as a TCO due to its excellent optical and electrical properties. However, ITO films have a low work function of about 4.8 eV. This low work function of ITO films leads to deterioration of the conversion efficiency of solar cells. In this work, ITO films with various Zn contents of 0, 6.9, 12.7, 28.8, and 36.6 at.% were fabricated by a co-sputtering method using ITO and AZO targets at room temperature. The optical and electrical properties of Zn-doped ITO thin films were analyzed. Then, silicon heterojunction solar cells with these films were fabricated. The 12.7 at% Zn-doped ITO films show the highest hall mobility of 35.71 $cm^2$/Vsec. With increasing Zn content over 12.7, the hall mobility decreases. Although a small addition of Zn content increased the work function, further addition of Zn content over 12.7 at.% led to decreasing electrical properties because of the decrease in the carrier concentration and hall mobility. Silicon heterojunction solar cells with 12.7 at% Zn-doped ITO thin films showed the highest conversion efficiency of 15.8%.

• E2M - 전기 전자와 첨단 소재
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• 제10권10호
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• pp.1034-1040
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• 1997

A solar cell conversion effiency was degraded by grain boundary effect in polycrystalline silicon. Grain boundaries acted as potential barriers as well as recombination centers for the photo-generated carriers. To reduce these effects of the grain boundaries we investigated various influencing factors such as emitter thickness thermal treatment preferential chemical etching of grain boundaries grid design contact metal and top metallization along boundaries. Pretreatment in $N_2$atmosphere and gettering by POCl$_3$and Al were performed to obtain multicrystalline silicon of the reduced defect density. Structural electrical and optical properties of slar cells were characterized before and after each fabrication process. Improved conversion efficiencies of solar cell were obtained by a combination of pretreatment above 90$0^{\circ}C$ emitter layer of 0.43${\mu}{\textrm}{m}$ Al diffusion in to grain boundaries on rear side fine grid finger top Yb metal and buried contact metallization along grain boundaries.

• Journal of the Optical Society of Korea
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• 제14권2호
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• pp.142-145
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• 2010

In this work, a numerical analysis of a CIGS ($CuIn_{1-x}Ga_xSe_2$) solar cell with a rectangular grating on the electrode is presented. The effects of the grating on the energy conversion efficiency are calculated using the RCWA (rigorous coupled wave analysis) method. In conventional CIGS solar cells, the thickness of the light absorption layer (CIGS) is $2\;{\mu}m$, at which the incident light is almost absorbed. By adopting a grating on the electrode and using a less than $1\;{\mu}m$ CIGS layer, we obtained a higher efficiency compared to the conventional solar cells.