• Journal of the Korean Society of Surveying, Geodesy, Photogrammetry and Cartography
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• v.40 no.2
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• pp.91-108
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• 2022

In most cases, optical images have been used as training data of DL (Deep Learning) models for object detection, recognition, identification, classification, semantic segmentation, and instance segmentation. However, properties of 3D objects in the real-world could not be fully explored with 2D images. One of the major sources of the 3D geospatial information is DSM (Digital Surface Model). In this matter, characteristic information derived from DSM would be effective to analyze 3D terrain features. Especially, man-made objects such as buildings having geometrically unique shape could be described by geometric elements that are obtained from 3D geospatial data. The background and motivation of this paper were drawn from concept of the intrinsic image that is involved in high-level visual information processing. This paper aims to extract buildings after classifying terrain features by training DL model with DSM-derived information including slope, aspect, and SRI (Shaded Relief Image). The experiments were carried out using DSM and label dataset provided by ISPRS (International Society for Photogrammetry and Remote Sensing) for CNN-based SegNet model. In particular, experiments focus on combining multi-source information to improve training performance and synergistic effect of the DL model. The results demonstrate that buildings were effectively classified and extracted by the proposed approach.

• Korean Journal of Optics and Photonics
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• v.35 no.3
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• pp.107-114
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• 2024

In this study, the feasibility of using the covariance-matrix-adaptation-evolution-strategy (CMA-ES) algorithm in a multichannel coherent-beam-combining (CBC) system was experimentally verified. We constructed a multichannel CBC system utilizing a spatial light modulator (SLM) as a multichannel phase-modulator array, along with a coherent light source at 635 nm, implemented the stochastic-parallel-gradient-descent (SPGD) and CMA-ES algorithms on it, and compared their performances. In particular, we evaluated the characteristics of the CMA-ES and SPGD algorithms in the CBC system in both 16-channel rectangular and 19-channel honeycomb formats. The results of the evaluation showed that the performances of the two algorithms were similar on average, under the given conditions; However, it was verified that under the given conditions the CMA-ES algorithm was able to operate with more stable performance than the SPGD algorithm, as the former had less operational variation with the initial phase setting than the latter. It is emphasized that this study is the first proof-of-principle demonstration of the CMA-ES phase-control algorithm in a multichannel CBC system, to the best of our knowledge, and is expected to be useful for future experimental studies of the effects of additional channel-number increments, or external-phase-noise effects, in multichannel CBC systems based on the CMA-ES phase-control algorithm.

• Korean Journal of Remote Sensing
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• v.35 no.6_3
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• pp.1173-1185
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• 2019

We, for the first time, retrieved sulfur dioxide (SO₂) vertical column density (VCD) in industrial and volcanic areas from TROPOspheric Monitoring Instrument (TROPOMI) using the Principle component analysis(PCA) algorithm. Furthermore, SO₂ VCDs retrieved by the PCA algorithm from TROPOMI raw data were compared with those retrieved by the Differential Optical Absorption Spectroscopy (DOAS) algorithm (TROPOMI Level 2 SO₂ product). In East Asia, where large amounts of SO₂ are released to the surface due to anthropogenic source such as fossil fuels, the mean value of SO₂ VCD retrieved by the PCA (DOAS) algorithm was shown to be 0.05 DU (-0.02 DU). The correlation between SO₂ VCD retrieved by the PCA algorithm and those retrieved by the DOAS algorithm were shown to be low (slope = 0.64; correlation coefficient (R) = 0.51) for cloudy condition. However, with cloud fraction of less than 0.5, the slope and correlation coefficient between the two outputs were increased to 0.68 and 0.61, respectively. It means that the SO₂ retrieval sensitivity to surface is reduced when the cloud fraction is high in both algorithms. Furthermore, the correlation between volcanic SO₂ VCD retrieved by the PCA algorithm and those retrieved by the DOAS algorithm is shown to be high (R = 0.90) for cloudy condition. This good agreement between both data sets for volcanic SO₂ is thought to be due to the higher accuracy of the satellite-based SO₂ VCD retrieval for SO₂ which is mainly distributed in the upper troposphere or lower stratosphere in volcanic region.

• Korean Journal of Remote Sensing
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• v.30 no.4
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• pp.455-464
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• 2014

After launching the Geostationary Ocean Color Imager (GOCI) on June 2010, field campaigns were performed routinely around Korean peninsula to collect in-situ data for calibration and validation. Key measurements in the campaigns are radiometric ones with field radiometers such as Analytical Spectral Devices FieldSpec3 or TriOS RAMSES. The field radiometers must be regularly calibrated. We, in the paper, introduce the optical laboratory built in KOSC and the relative calibration method for in-situ measurement spectroradiometer. The laboratory is equipped with a 20-inch integrating sphere (USS-2000S, LabSphere) in 98% uniformity, a reference spectrometer (MCPD9800, Photal) covering wavelengths from 360 nm to 1100 nm with 1.6 nm spectral resolution, and an optical table ($3600{\times}1500{\times}800mm^3$) having a flatness of ${\pm}0.1mm$. Under constant temperature and humidity maintainance in the room, the reference spectrometer and the in-situ measurement instrument are checked with the same light source in the same distance. From the test of FieldSpec3, we figured out a slight difference among in-situ instruments in blue band range, and also confirmed the sensor spectral performance was changed about 4.41% during 1 year. These results show that the regular calibrations are needed to maintain the field measurement accuracy and thus GOCI data reliability.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.10 no.3
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• pp.189-198
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• 2000

The stochiometric mixture of evaporating materials for the $CuGaSe_2$single crystal thin films were prepared from horizontal furnace. Using extrapolation method of X-ray diffraction patterns for the polycrystal $CuGaSe_2$, it was found tetragonal structure whose lattice constant $a_0}$ and $c_0$ were 5.615 $\AA$ and 11.025 $\AA$, respectively. To obtains the single crystal thin films, $CuGaSe_2$mixed crystal was deposited on throughly etched GaAs(100) by the Hot Wall Epitaxy (HWE) system. The source and substrate temperature were $610^{\circ}C$ and $450^{\circ}C$ respectively, and the growth rate of the single crystal thin films was about 0.5$\mu\textrm{m}$/h. The crystalline structure of single crystal thin films was investigated by the double crystal X-ray diffraction (DCXD). Hall effect on this sample was measured by the method of van der Pauw and studied on carrier density and mobility depending on temperature. From Hall data, the mobility was likely to be decreased by pizoelectric scattering in the temperature range 30 K to 150 K and by polar optical scattering in the temperature range 150 K to 293 K. The optical energy gaps were found to be 1.68 eV for CuGaSe$_2$sing1e crystal thin films at room temperature. The temperature dependence of the photocurrent peak energy is well explained by the Varshni equation then the constants in the Varshni equation are given by $\alpha$ = $9.615{\times}10^{-4}$eV/K, and $\beta$ = 335 K. From the photocurrent spectra by illumination of polarized light of the $CuGaSe_2$single crystal thin films. We have found that values of spin orbit coupling $\Delta$So and crystal field splitting $\Delta$Cr was 0.0900 eV and 0.2498 eV, respectively. From the PL spectra at 20 K, the peaks corresponding to free bound excitons and D-A pair and a broad emission band due to SA is identified. The binding energy of the free excitons are determined to be 0.0626 eV and the dissipation energy of the acceptor-bound exciton and donor-bound exciton to be 0.0352 eV, 0.0932 eV, respectively.

• Journal of the Korean Vacuum Society
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• v.22 no.2
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• pp.86-91
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• 2013

The optical properties of InAs quantum dots (QDs) grown on GaAs substrates grown by molecular beam epitaxy have been studied using photoluminescence (PL) and time-resolved PL measurements. InAs QDs were grown using an arsenic interruption growth (AIG) technique, in which the As flux was periodically interrupted by a closed As shutter during InAs QDs growth. In this study, the shutter of As source was periodically opened and closed for 1 (S1), 2 (S2), or 3 s (S3). For comparison, an InAs QD sample (S0) without As interruption was grown in a pure GaAs matrix for 20 s. The PL intensity of InAs QD samples grown by AIG technique is stronger than that of the reference sample (S0). While the PL peaks of S1 and S2 are redshifted compared to that of S0, the PL peak of S3 is blueshifted from that of S0. The increase of the PL intensity for the InAs QDs grown by AIG technique can be explained by the reduced InAs clusters, the increased QD density, the improved QD uniformity, and the improved aspect ratio (height/length). The redshift (blueshift) of the PL peak for S1 (S3) compared with that for S0 is attributed to the increase (decrease) in the QD average length compared to the average length of S0. The PL intensity, PL peak position, and PL decay time have been investigated as functions of temperature and emission wavelength. S2 shows no InAs clusters, the increased InAs QD density, the improved QD uniformity, and the improved QD aspect ratio. S2 also shows the strongest PL intensity and the longest PL decay time. These results indicate that the size (shape), density, and uniformity of InAs QDs can be controlled by using AIG technique. Therefore the emission wavelength and luminescence properties of InAs/GaAs QDs can also be controlled.

• Korean Journal of Heritage: History & Science
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• v.55 no.1
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• pp.175-198
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• 2022

With the development of technology, the methods of digitally converting various forms of analog information have become common. As a result, the concept of recording, building, and reproducing data in a virtual space, such as digital heritage and digital reconstruction, has been actively used in the preservation and research of various cultural heritages. However, there are few existing research results that suggest optimal scanners for small and medium-sized relics. In addition, scanner prices are not cheap for researchers to use, so there are not many related studies. The 3D scanner specifications have a great influence on the quality of the 3D model. In particular, since the state of light reflected on the surface of the object varies depending on the type of light source used in the scanner, using a scanner suitable for the characteristics of the object is the way to increase the efficiency of the work. Therefore, this paper conducted a study on nine small and medium-sized buried cultural properties of various materials, including earthenware and porcelain, by period, to examine the differences in quality of the four types of 3D scanners. As a result of the study, optical scanners and small and medium-sized object scanners were the most suitable digital records of the small and medium-sized relics. Optical scanners are excellent in both mesh and texture but have the disadvantage of being very expensive and not portable. The handheld method had the advantage of excellent portability and speed. When considering the results compared to the price, the small and medium-sized object scanner was the best. It was the photo room measurement that was able to obtain the 3D model at the lowest cost. 3D scanning technology can be largely used to produce digital drawings of relics, restore and duplicate cultural properties, and build databases. This study is meaningful in that it contributed to the use of scanners most suitable for buried cultural properties by material and period for the active use of 3D scanning technology in cultural heritage.

• Korean Journal of Remote Sensing
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• v.39 no.6_1
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• pp.1283-1297
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• 2023

Mid-wave infrared (MWIR) imagery, due to its ability to capture the temperature of land cover and objects, serves as a crucial data source in various fields including environmental monitoring and defense. The KOMPSAT-3A satellite acquires MWIR imagery with high spatial resolution compared to other satellites. However, the limited spatial resolution of MWIR imagery, in comparison to electro-optical (EO) imagery, constrains the optimal utilization of the KOMPSAT-3A data. This study aims to create a highly visible MWIR fusion image by leveraging the edge information from the KOMPSAT-3A panchromatic (PAN) image. Preprocessing is implemented to mitigate the relative geometric errors between the PAN and MWIR images. Subsequently, we employ a pre-trained pixel difference network (PiDiNet), a deep learning-based edge information extraction technique, to extract the boundaries of objects from the preprocessed PAN images. The MWIR fusion imagery is then generated by emphasizing the brightness value corresponding to the edge information of the PAN image. To evaluate the proposed method, the MWIR fusion images were generated in three different sites. As a result, the boundaries of terrain and objects in the MWIR fusion images were emphasized to provide detailed thermal information of the interest area. Especially, the MWIR fusion image provided the thermal information of objects such as airplanes and ships which are hard to detect in the original MWIR images. This study demonstrated that the proposed method could generate a single image that combines visible details from an EO image and thermal information from an MWIR image, which contributes to increasing the usage of MWIR imagery.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.25 no.5
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• pp.173-181
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• 2015

A stoichiometric mixture of evaporating materials for $BaIn_2S_4$ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, $BaIn_2S_4$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperatures were $620^{\circ}C$ and $420^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by double crystal X-ray diffraction (DCXD). The carrier density and mobility of $BaIn_2S_4$ single crystal thin films measured from Hall effect by van der Pauw method are $6.13{\times}10^{17}cm^{-3}$ and $222cm^2/v{\cdot}s$ at 293 K, respectively. The temperature dependence of the energy band gap of the $BaIn_2S_4$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)=3.0581eV-(3.9511{\times}10^{-3}eV/K)T^2/(T+536K)$. The crystal field and the spin-orbit splitting energies for the valence band of the $BaIn_2S_4$ have been estimated to be 182.7 meV and 42.6 meV, respectively, by means of the photocurrent spectra and the Hopfield quasicubic model. These results indicate that the splitting of the ${\Delta}so$ definitely exists in the ${\Gamma}_5$ states of the valence band of the $BaIn_2S_4/GaAs$ epilayer. The three photocurrent peaks observed at 10 K are ascribed to the $A_1$-, $B_1$-exciton for n = 1 and $C_{24}$-exciton peaks for n = 24.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.154-155
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• 2012

The promise of nano-crystalites (nc) as a technological material, for applications including display backplane, and solar cells, may ultimately depend on tailoring their behavior through doping and crystallinity. Impurities can strongly modify electronic and optical properties of bulk and nc semiconductors. Highly doped dopant also effect structural properties (both grain size, crystal fraction) of nc-Si thin film. As discussed in several literatures, P atoms or radicals have the tendency to reside on the surface of nc. The P-radical segregation on the nano-grain surfaces that called self-purification may reduce the possibility of new nucleation because of the five-coordination of P. In addition, the P doping levels of ${\sim}2{\times}10^{21}\;at/cm^3$ is the solubility limitation of P in Si; the solubility of nc thin film should be smaller. Therefore, the non-activated P tends to segregate on the grain boundaries and the surface of nc. These mechanisms could prevent new nucleation on the existing grain surface. Therefore, most researches shown that highly doped nc-thin film by using conventional PECVD deposition system tended to have low crystallinity, where the formation energy of nucleation should be higher than the nc surface in the intrinsic materials. If the deposition technology that can make highly doped and simultaneously highly crystallized nc at low temperature, it can lead processes of next generation flexible devices. Recently, we are developing a novel CVD technology with a neutral particle beam (NPB) source, named as neutral beam assisted CVD (NBaCVD), which controls the energy of incident neutral particles in the range of 1~300eV in order to enhance the atomic activation and crystalline of thin films at low temperatures. During the formation of the nc-/pm-Si thin films by the NBaCVD with various process conditions, NPB energy directly controlled by the reflector bias and effectively increased crystal fraction (~80%) by uniformly distributed nc grains with 3~10 nm size. In the case of phosphorous doped Si thin films, the doping efficiency also increased as increasing the reflector bias (i.e. increasing NPB energy). At 330V of reflector bias, activation energy of the doped nc-Si thin film reduced as low as 0.001 eV. This means dopants are fully occupied as substitutional site, even though the Si thin film has nano-sized grain structure. And activated dopant concentration is recorded as high as up to 1020 #/$cm^3$ at very low process temperature (＜ $80^{\circ}C$) process without any post annealing. Theoretical solubility for the higher dopant concentration in Si thin film for order of 1020 #/$cm^3$ can be done only high temperature process or post annealing over $650^{\circ}C$. In general, as decreasing the grain size, the dopant binding energy increases as ratio of 1 of diameter of grain and the dopant hardly be activated. The highly doped nc-Si thin film by low-temperature NBaCVD process had smaller average grain size under 10 nm (measured by GIWAXS, GISAXS and TEM analysis), but achieved very higher activation of phosphorous dopant; NB energy sufficiently transports its energy to doping and crystallization even though without supplying additional thermal energy. TEM image shows that incubation layer does not formed between nc-Si film and SiO2 under later and highly crystallized nc-Si film is constructed with uniformly distributed nano-grains in polymorphous tissues. The nucleation should be start at the first layer on the SiO2 later, but it hardly growth to be cone-shaped micro-size grains. The nc-grain evenly embedded pm-Si thin film can be formatted by competition of the nucleation and the crystal growing, which depend on the NPB energies. In the evaluation of the light soaking degradation of photoconductivity, while conventional intrinsic and n-type doped a-Si thin films appeared typical degradation of photoconductivity, all of the nc-Si thin films processed by the NBaCVD show only a few % of degradation of it. From FTIR and RAMAN spectra, the energetic hydrogen NB atoms passivate nano-grain boundaries during the NBaCVD process because of the high diffusivity and chemical potential of hydrogen atoms.