• Korean Journal of Optics and Photonics
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• v.16 no.3
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• pp.248-253
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• 2005

We designed and fabricated a compact multi-mode interference (MMI) wavelength demultiplexer using the concept of 'Improved Quasi-State' modes. The output power and extinction ratio were improved by utilizing modal phase error which is specially occurred in low-index contrast. For a designed demultiplexer, the mode propagation analysis with effective index approximation shows significant improvement of extinction ratio to -25 dB for both $1.31{\mu}m\;and\;1.51{\mu}m$ wavelength region and the split-length was reduced about 1/5 of other MMI devices. The fabricated device shows successful characteristics for both 1.31 and $1.55{\mu}m$ wavelengths. These results demonstrate the potential of low-index materials system and the embossing process for photonic integrated circuits.

• Korean Journal of Optics and Photonics
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• v.17 no.6
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• pp.556-563
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• 2006

We present a comprehensive study of a chirped pulse Ti:sapphire regenerative amplifier system operating at 1 kHz. Main constituents of the system are described in detail. The amplifier stage was first converted to a repetition rate-tunable kHz gain-switched nanosecond Ti:sapphire laser. Operation characteristics at different repetition rates such as build-up times of laser pulses, pump power-dependent output powers and pulse durations, damage thresholds, and tunability ranges were studied. Based on the results achieved, the switching time of the Pocket's cell used and the round trip numbers in the regenerative amplifier were optimized at 1 kHz. The output pulses with a pulse width of 50fs from a home-made Ken lens mode-locked Ti:sapphire oscillator were used as seed pulses. The pulses were expanded to 120ps in a grating stretcher prior to coupling into the 3-mirror amplifier cavity. After amplification and recompression, a stable 1kHz Ti:sapphire regenerative amplifier system, which delivers 85-fs, $320-{\mu}J$ pulses, was fully constructed.

• Korean Journal of Optics and Photonics
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• v.28 no.4
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• pp.166-171
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• 2017

Hydrogen gas is a green energy sources because it features no emission of pollutants during combustion. But hydrogen gas is very dangerous, being flammable and very explosive. Hydrogen gas detection is very important for the safety of a nuclear power plant. Hydrogen gas is generated by oxidation of nuclear fuel cladding during a critical accident, and leads to serious secondary damage in the containment building. This paper discusses the development of a Raman lidar system for remote detection and measurement of hydrogen gas. A small, portable Raman lidar system was designed, and a measurement algorithm was developed to quantitatively measure hydrogen gas concentration. To verify the capability of measuring hydrogen gas with the developed Raman lidar system, experiments were carried out under daytime outdoor conditions by using a gas chamber that can adjust the hydrogen gas density. As results, our Raman lidar system is able to measure a minimum density of 0.67 vol. % hydrogen gas at a distance of 20 m.

• Korean Journal of Food Science and Technology
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• v.27 no.3
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• pp.306-312
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• 1995

In order to know properties in rice starch during storage of rice, rice starch from stored rice(stored at $5^{\circ}C$, R.H. 65% and $30^{\circ}C$, R.H. 85%, for 16 weeks) used in this experiment. Water binding capacity of rice starch increased for 8 weeks, and then it decreased. As the storage period took longer, swelling power and solubility, optical transmittance, blue value, total amylose content and soluble amylose content decreased. For the same periods, changes in rice starch from stored rice$(30^{\circ}C$, R.H. 85%) were made more than those in rice starch at $5^{\circ}C$, R.H. 65%. The granule shape of rice starch, irrespective of storage periods and conditions, didn't make a significant difference. The relative crystallinity of the rice starch by X-ray diffraction didn't distinctly changed till the second week. But, at the fourth week, that by X-ray diffraction significantly decreased, and then slightly decreased. As the storage period took longer, gelatinization temperature, melting temperature and melting enthalpy measured by DSC got higher, but gelatinization enthalpy got lower. For the same storage period, gelatinization temperature, melting temperature, gelatinization enthalpy and melting enthalpy of rice starch stored at $30^{\circ}C$, R.H. 85% made changes more than those of rice starch stored at $5^{\circ}C$, R.H. 65% did.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.20 no.4
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• pp.164-167
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• 2010

Bulk GaN single crystal with 1.5 mm thickness was successfully grown by hydride vapor phase epitaxy (HVPE) technique. Free-standing GaN substrates of $10{\times}10,\;15{\times}15$ mm size were fabricate after lift-off of sapphire substrate and their optical properties were characterized properties for device applications. X-ray diffraction patterns showed (002) and (004) peak, and the FWHM of the X-ray rocking curve (XRC) measurement in (002) was 98 arcsec. A sharp photoluminescence spectrum at 363 nm was observed and defect spectrum at visible range was not detected. The hexagonal-shaped etch-pits are formed on the GaN surface in $200^{\circ}C\;H_3PO_4$ at 5 minutes. The defect density calculated from observed etch-pits on surface was around $5{\times}10^6/cm^2$. This indicates that the fabricated GaN substrates can be used for applications in the field of optodevice, and high power electronics.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.477-477
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• 2008

For more than three decades, the gate dielectrics in CMOS devices are $SiO_2$ because of its blocking properties of current in insulated gate FET channels. As the dimensions of feature size have been scaled down (width and the thickness is reduced down to 50 urn and 2 urn or less), gate leakage current is increased and reliability of $SiO_2$ is reduced. Many metal oxides such as $TiO_2$, $Ta_2O_4$, $SrTiO_3$, $Al_2O_3$, $HfO_2$ and $ZrO_2$ have been challenged for memory devices. These materials posses relatively high dielectric constant, but $HfO_2$ and $Al_2O_3$ did not provide sufficient advantages over $SiO_2$ or $Si_3N_4$ because of reaction with Si substrate. Recently, $HfO_2$ have been attracted attention because Hf forms the most stable oxide with the highest heat of formation. In addition, Hf can reduce the native oxide layer by creating $HfO_2$. However, new gate oxide candidates must satisfy a standard CMOS process. In order to fabricate high density memories with small feature size, the plasma etch process should be developed by well understanding and optimizing plasma behaviors. Therefore, it is necessary that the etch behavior of $HfO_2$ and plasma parameters are systematically investigated as functions of process parameters including gas mixing ratio, rf power, pressure and temperature to determine the mechanism of plasma induced damage. However, there is few studies on the the etch mechanism and the surface reactions in $BCl_3$ based plasma to etch $HfO_2$ thin films. In this work, the samples of $HfO_2$ were prepared on Si wafer with using atomic layer deposition. In our previous work, the maximum etch rate of $BCl_3$/Ar were obtained 20% $BCl_3$/ 80% Ar. Over 20% $BCl_3$ addition, the etch rate of $HfO_2$ decreased. The etching rate of $HfO_2$ and selectivity of $HfO_2$ to Si were investigated with using in inductively coupled plasma etching system (ICP) and $BCl_3/Cl_2$/Ar plasma. The change of volume densities of radical and atoms were monitored with using optical emission spectroscopy analysis (OES). The variations of components of etched surfaces for $HfO_2$ was investigated with using x-ray photo electron spectroscopy (XPS). In order to investigate the accumulation of etch by products during etch process, the exposed surface of $HfO_2$ in $BCl_3/Cl_2$/Ar plasma was compared with surface of as-doped $HfO_2$ and all the surfaces of samples were examined with field emission scanning electron microscopy and atomic force microscope (AFM).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.169-169
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• 2008

To keep pace with scaling trends of CMOS technologies, high-k metal oxides are to be introduced. Due to their high permittivity, high-k materials can achieve the required capacitance with stacks of higher physical thickness to reduce the leakage current through the scaled gate oxide, which make it become much more promising materials to instead of $SiO_2$. As further studying on high-k, an understanding of the relation between the etch characteristics of high-k dielectric materials and plasma properties is required for the low damaged removal process to match standard processing procedure. There are some reports on the dry etching of different high-k materials in ICP and ECR plasma with various plasma parameters, such as different gas combinations ($Cl_2$, $Cl_2/BCl_3$, $Cl_2$/Ar, $SF_6$/Ar, and $CH_4/H_2$/Ar etc). Understanding of the complex behavior of particles at surfaces requires detailed knowledge of both macroscopic and microscopic processes that take place; also certain processes depend critically on temperature and gas pressure. The choice of $BCl_3$ as the chemically active gas results from the fact that it is widely used for the etching o the materials covered by the native oxides due to the effective extraction of oxygen in the form of $BCl_xO_y$ compounds. In this study, the surface reactions and the etch rate of $Al_2O_3$ films in $BCl_3/Cl_2$/Ar plasma were investigated in an inductively coupled plasma(ICP) reactor in terms of the gas mixing ratio, RF power, DC bias and chamber pressure. The variations of relative volume densities for the particles were measured with optical emission spectroscopy (OES). The surface imagination was measured by AFM and SEM. The chemical states of film was investigated using X-ray photoelectron spectroscopy (XPS), which confirmed the existence of nonvolatile etch byproducts.

• Korean Journal of Crystallography
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• v.8 no.1
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• pp.38-47
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• 1997

A new weighing sensor for the automatic diameter control system of the crystal growth is developed in this study. This weighing sensor measures the frequency of the vibrating element which is lineally changing with respect to weight. The signal and the power of this system are transmitted without any physical contact, so that this sensor offers high accuracy and resolution. This system consists of a string, a sinusoidal wave generator, an automatic amplification adjusting circuit, signal transformers and a PCB. 4 kinds of programs are developed for checking DAC, weight calibration and controlling growth process. The measurements of the standard deviation and the resolution show $\pm0.10g$(measured at every second) and $5{\times}10^{-5}$, respectively, This weighing sensor is effective under high pres-sure of 200 atm, high temperature and vacuum condition. The weighing system can control the temperature in the accuracy of $\pm0.025^{\circ}C$ with the 'signal divider'. The optical quality single crystals of $(YGd)_3Sc_2Ga_3O_{12},\;Er-Y_3Sc_2Al_3O_{12},\;and\;Bi_{12}GeO_{20}$ have been grown by Czo-chralski method using this auto-diameter control system.

• Journal of Sensor Science and Technology
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• v.2 no.1
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• pp.3-10
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• 1993

Polycrystalline CdS thin films were grown on ceramic substrate using a chemical bath deposition method. They were annealed at various temperature and X-ray diffraction patterns were measured by X-ray diffractometer in order to study CdS polycrystal structure. Using extrapolation method of X-ray diffraction patterns for the CdS samples annealed in $N_{2}$ gas at $550^{\circ}C$ it was found hexagonal structure whose lattice constants $a_{o}$ and $c_{o}$ were $4.1364{\AA}$ and $6.7129{\AA}$, respectively. Its grain size was about $0.35{\mu}m$. Hall effect on this sample was measured by Van der Pauw method and studied on carrier density and mobility defending on temperature. From Hall data, the mobility was likely to be decreased by piezo electric scattering at temperature range of 33K and 150k and by polar optical scattering at temperature range of 150K and 293K. We measured also spectral response, sensitivity (${\gamma}$), maximum allowable power dissipation and response time on these samples.

• Journal of Sensor Science and Technology
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• v.2 no.1
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• pp.81-86
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• 1993

Polycrystalline CdSe thin films were grown on ceramic substrate using a chemical bath deposition (CBD) method. They were annealed at various temperature and X-ray diffraction patterns were measured by X-ray diffractometer in order to study CdSe polycrystal structure. Using extrapolation method of X-ray diffraction patterns for the CdSe samples annealed in $N_{2}$ gas at $450^{\circ}C$ it was found hexagonal structure whose lattice parameters $a_{o}$ and $c_{o}$ were $4.302{\AA}$ and $7.014{\AA}$, respectively. Its grain size was about $0.3{\mu}m$. Hall effect on this sample was measured by Van der Pauw method and studied on carrier density and mobility depending on temperature. From Hall data, the mobility was likely to be decreased by piezo electric scattering at temperature range of 33 K and 200 K, and by polar optical scattering at temperature range of 200 K and 293 K. We measured also spectral response, sensitivity (${\gamma}$), maximum allowable power dissipation and response time on these samples.