• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.254-254
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• 2011

The memories with nano-particles are very attractive because they are promising candidates for low operating voltage, long retention time and fast program/erase speed. In recent, various nano-floating gate memories with metal-oxide nanocrystals embedded in organic and inorganic layers have been reported. Because of the carrier generation in semiconductor, induced photon pulse enhanced the program/erase speed of memory device. We studied photo-induced electrical properties of these metal-oxide nanocrystal memory devices. At first, 2~10-nm-thick Sn and In metals were deposited by using thermal evaporation onto Si wafer including a channel with $n^+$ poly-Si source/drain in which the length and width are 10 ${\mu}m$ each. Then, a poly-amic-acid (PAA) was spin coated on the deposited Sn film. The PAA precursor used in this study was prepared by dissolving biphenyl-tetracarboxylic dianhydride-phenylene diamine (BPDA-PDA) commercial polyamic acid in N-methyl-2-pyrrolidon (NMP). Then the samples were cured at 400$^{\circ}C$ for 1 hour in N atmosphere after drying at 135$^{\circ}C$ for 30 min through rapid thermal annealing. The deposition of aluminum layer with thickness of 200 nm was followed by using a thermal evaporator, and then the gate electrode was defined by photolithography and etching. The electrical properties were measured at room temperature using an HP4156a precision semiconductor parameter analyzer and an Agilent 81101A pulse generator. Also, the optical pulse for the study on photo-induced electrical properties was applied by Xeon lamp light source and a monochromator system.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.103-104
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• 2006

PRAM (Phase change Random Access Memory) is one of the most promising candidates for next generation Non-volatile Memories. The Phase change material has been researched in the field of optical data storage media. However, the characteristics required in solid state memory are quite different from optical ones. In this study, the reset current and temperature profile of PRAM cells with bottom electrode were calculated by the numerical method.

• Proceedings of the Korean Magnestics Society Conference
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• 1994.03a
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• pp.12-13
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• 1994

Magnetic recording is still considered to be a.leader in storage industries in general. The rigid disk drive, in particular, has an advantage over tape, optical, magneto-optical, or flash memories, because of high areal density and fast access time with reasonably low cost per Mbyte. However, to be competitive in the market and to keep an edge over other storage devices, head and media in rigid disk drives require better performance per cost and more aggressive improvement in areal density, as shown in Fig. 1, than before. In this review paper, the future trend in head/media technologies of the rigid disk drive has been reviewed. Thin film media and thin film inductive/MR heads will be mainly discussed, since they are expected to be dominant in the future high-end drives over other technologies, such as particulate media or MIG heads.(omitted)mitted)

• Journal of Advanced Marine Engineering and Technology
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• v.29 no.6
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• pp.707-712
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• 2005

PRAM (Phase change random access memory) is one of the most promising candidates for next generation Non-volatile Memories. The Phase change materials have been researched in the field of optical data storage media. Among the phase change materials. $Ge_2Sb_2Te_5$ is very well known for its high optical contrast in the state of amorphous and crystalline. However the characteristics required in solid state memory are quite different from optical ones. In this study. the structural Properties of GeSbTe thin films with composition were investigated for PRAM. The 100-nm thick $Ge_2Sb_2Te_5$ and $Sb_2Te_3$ films were deposited on $SiO_2/Si$ substrates by RF sputtering system. In order to characterize the crystal structure and morphology of these films. x-ray diffraction (XRD). atomic force microscopy (AFM), differential scanning calorimetry (DSC) and 4-point measurement analysis were performed. XRD and DSC analysis result of GST thin films indicated that the crystallization of $Se_2Sb_2Te_5$ films start at about $180^{\circ}C$ and $Sb_2Te_3$ films Start at about $125^{\circ}C$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.203-204
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• 2005

PRAM (Phase change Random Access Memory) is one of the most promising candidates for next generation Non-volatile Memories. The Phase change material has been researched in the field of optical data storage media. Among the phase change materials $Ge_2Sb_2Te_5$(GST) is very well known for its high optical contrast in the state of amorphous and crystalline. However, the characteristics required in solid state memory are quite different from optical ones. In this study, the structural properties of GST thin films with composition were investigated for PRAM. The 100-nm thick GeTe and $Sb_2Te_3$ films were deposited on $SiO_2$/Si substrates by RF sputtering system. In order to characterize the crystal structure and morphology of these films, we performed x-ray diffraction (XRD) and atomic force microscopy (AFM).

• Proceedings of the KIEE Conference
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• 1994.11a
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• pp.379-381
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• 1994

Volume holograms recorded in photorefractive materials can find important applications in optical memories and optical computing systems. One problem with a photorefractive hologram is that it gets erased by the readout light. Nondestructive readout can be achieved by hologram fixing, and several fixing methods have been reported. Fixing is accomplished by thermally activated motion of an unknown ionic defect, which neutralizes the electronic space-charge patterns. At room temperature the ionic patterns are stabilized. When the electrons are partially redistributed by light, a net space-charge pattern appears, and tile fixed hologram can be read out. In this paper, theoretical modeling and some experimental results are presented for thermal fixing of volume phase holograms in photorefractive $LiNbO_3$:Fe. Thermal fixing can be done during or after recording and depends on fixing temperature ($100{\sim}200^{\circ}C$ range) and grating length. Fixed Slating can be erased completely at the temperature over $300^{\circ}C$. Theoretical modeling shows weil the compensation of electronic Slating by ionic grating and is in good agreement with experimental results. In experiments the dependence of thermal fixing on temperatures and grating lengths is investigated.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.108-109
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• 2012

This talk will begin with the demonstration of facile synthesis of silicon nanostructures using the magnesiothermic reduction on silica nanostructures prepared via self-assembly, which will be followed by the characterization results of their performance for energy storage. This talk will also report the fabrication and characterization of highly porous, stretchable, and conductive polymer nanocomposites embedded with carbon nanotubes (CNTs) for application in flexible lithium-ion batteries. It will be presented that the porous CNT-embedded PDMS nanocomposites are capable of good electrochemical performance with mechanical flexibility, suggesting these nanocomposites could be outstanding anode candidates for use in flexible lithium-ion batteries. Directed self-assembly (DSA) of block copolymers (BCPs) can generate uniform and periodic patterns within guiding templates, and has been one of the promising nanofabrication methodologies for resolving the resolution limit of optical lithography. BCP self-assembly processing is scalable and of low cost, and is well-suited for integration with existing semiconductor manufacturing techniques. This talk will introduce recent research results (of my research group) on the self-assembly of Si-containing block copolymers for the achievement of sub-10 nm resolution, fast pattern generation, transfer-printing capability onto nonplanar substrates, and device applications for nonvolatile memories. An extraordinarily facile nanofabrication approach that enables sub-10 nm resolutions through the synergic combination of nanotransfer printing (nTP) and DSA of block copolymers is also introduced. This simple printing method can be applied on oxides, metals, polymers, and non-planar substrates without pretreatments. This talk will also report the direct formation of ordered memristor nanostructures on metal and graphene electrodes by the self-assembly of Si-containing BCPs. This approach offers a practical pathway to fabricate high-density resistive memory devices without using high-cost lithography and pattern-transfer processes. Finally, this talk will present a novel approach that can relieve the power consumption issue of phase-change memories by incorporating a thin $SiO_x$ layer formed by BCP self-assembly, which locally blocks the contact between a heater electrode and a phase-change material and reduces the phase-change volume. The writing current decreases by 5 times (corresponding to a power reduction of 1/20) as the occupying area fraction of $SiO_x$ nanostructures varies.

• Korean Journal of Optics and Photonics
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• v.12 no.1
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• pp.61-66
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• 2001

Defocused Fourier plane holograms are stored in disk-type holographic memories where thin recording media are used, the areal storage density per hologram and the intensity uniformity of the signal beam at the recording plane are studied. As the pixel pitch of the spatial light modulator that represents binary data increases, the storage density per hologram increases if exact Fourier holograms are stored. When defocused Fourier plane holograms are stored, however, we show that there exists an optimal pixel pitch that maximizes the area storage density per hologram in general, to increase the areal storage density per hologram, f/# of the Fourier transform lens that focuses the data image should be as small as possible. In this case, not only the intensity distribution at the recording plane but also the recording area becomes very sensitive to the degree of defocusing. Therefore, even if the exact Fourier plane holograms are stored, the defocusing effect owing to the medium thickness should be taken into account to achieve the maximal areal storage density per hologram.logram.

• Korean Journal of Optics and Photonics
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• v.11 no.1
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• pp.58-64
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• 2000

Assuming that the performance of holographic storage media is ideal, we estimate the area storage density of disk-type holographic memories, when the method of either angle multiplexing, or rotational multiplexing, or both are used. The area storage density is strongly dependent on the f numbers (ratio of focal length to diameter) of both the Fourier transform lens in the signal arm, denoted by $F/#_2$, and the angle range over which the reference beam is incident (or, the equivalent f number corresponding to the angle range denoted by $F/#_1$). The area storage density is largely independent of the pixel pitch of the spatial light modulator when the Fourier plane holograms are recorded, while it is sensitive to the pixel pitch when the image plane holograms are recorded. In general, to obtain high area storage density, the Fourier or at least near Fourier plane holograms rather than the image plane holograms should be recorded. In addition, when the thickness of the recording materials are less than approximately $500\mu\extrm{m}$, rotational multiplexing gives higher area storage densities than angle multiplexing does. To increase the storage density further, however, it is desirable to use both of the two multiplexing methods in combination.nation.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.173-173
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• 2010

$Bi_4Ti_3O_{12}$ ($B_4T_3$) is a unique ferroelectric material that has a relatively high dielectric constant, high Curie temperature, high breakdown strength, and large spontaneous polarization. As a result this material has been widely studied for many applications, including nonvolatile ferroelectric random memories, microelectronic mechanical systems, and nonlinear-optical devices. Several reports have appeared on the use of Mn dopants to improve the electrical properties of $B_4T_3$ thin films. Mn ions have frequently been used for this purpose in thin films and multilayer capacitors in situations where intrinsic oxygen vacancies are the major defects. However, no systematic study of the optical properties of $B_4T_3$ films has appeared to date. Here, we report optical data for these films, determined by spectroscopic ellipsometry (SE). We also report the effects of thermal annealing and Mn doping on the optical properties. The SE data were analyzed using a multilayer model that is consistent with the original sample structure, specifically surface roughness/$B_4T_3$ film/Pt/Ti/$SiO_2$/c-Si). The data are well described by the Tauc-Lorentz dispersion function, which can therefore be used to model the optical properties of these materials. Parameters for reconstructing the dielectric functions of these films are also reported. The SE data show that thermal annealing crystallizes $B_4T_3$ films, as confirmed by the appearance of $B_4T_3$ peaks in X-ray diffraction patterns. The bandgap of $B_4T_3$ red-shifts with increasing Mn concentration. We interpret this as evidence of the existence deep levels generated by the Mn transition-metal d states. These results will be useful in a number of contexts, including more detailed studies of the optical properties of these materials for engineering high-speed devices.