• Journal of the Microelectronics and Packaging Society
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• v.24 no.3
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• pp.71-76
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• 2017

The electrical behavior and flexibility of the screen printed Ag circuits were investigated with infrared radiation sintering times and sintering temperatures. Electrical resistivity and radio frequency characteristics were evaluated by using the 4 point probe measurement and the network analyzer by using cascade's probe system, respectively. Electrical resistivity and radio frequency characteristics means that the direct current resistance and signal transmission properties of the printed Ag circuit. Flexibility of the screen printed Ag circuit was evaluated by measuring of electrical behavior during IPC sliding test. Failure mode of the Ag printed circuits was observed by using field emission scanning electron microscope and optical microscope. Electrical resistivity of the Ag circuits screen printed on Pl substrate was rapidly decreased with increasing sintering temperature and durations. The lowest electrical resistivity of Ag printed circuit was up to $3.8{\mu}{\Omega}{\cdot}cm$ at $250^{\circ}C$ for 45 min. The crack length arisen within the printed Ag circuit after $10{\times}10^4$ sliding numbers was 10 times longer than that of after $2.5{\times}10^4$ sliding numbers. Measured insertion loss and calculated insertion loss were in good agreements each other. Insertion loss of the printed Ag circuit was increased with increasing the number of sliding cycle.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11a
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• pp.175-178
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• 2004

The stochiometric mixture of evaporating materials for the $ZnIn_2S_4$ single crystal thin film was prepared from horizontal furnace. To obtain the $ZnIn_2S_4$ single crystal thin film, $ZnIn_2S_4$ mixed crystal was deposited on throughly etched semi-insulating GaAs(100) in the Hot Wall Epitaxy(HWE) system. The source and substrate temperature were $610^{\circ}C$ and $450^{\circ}C$, respectively and the growth rate of the $ZnIn_2S_4$ sing1e crystal thin film was about $0.5\;{\mu}m/hr$. The crystalline structure of $ZnIn_2S_4$ single crystal thin film was investigated by photoluminescence and double crystal X-ray diffraction(DCXD) measurement. The carrier density and mobility of $ZnIn_2S_4$ single crystal thin film measured from Hall effect by van der Pauw method are $8.51{\times}10^{17}\;cm^{-3}$, $291\;cm^2/V{\cdot}s$ at $293_{\circ}\;K$, respectively. From the photocurrent spectrum by illumination of perpendicular light on the c - axis of the $ZnIn_2S_4$ single crystal thin film, we have found that the values of spin orbit splitting ${\Delta}S_O$ and the crystal field splitting ${\Delta}Cr$ were 0.0148 eV and 0.1678 eV at $10_{\circ}\; K$, respectively. From the photoluminescence measurement of $ZnIn_2S_4$ single crystal thin film, we observed free excition $(E_X)$ typically observed only in high quality crystal and neutral donor bound exciton $(D^{o},X)$ having very strong peak intensity The full width at half maximum and binding energy of neutral donor bound excition were 9 meV and 26 meV, respectively, The activation energy of impurity measured by Haynes rule was 130 meV.

• Korean Journal of Optics and Photonics
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• v.9 no.4
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• pp.221-226
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• 1998

Ternary heavy metal oxide glasses in the $PbO-Bi_2O_3-Ga_2O_3$ system doped with $Er_2O_3$ were prepared and their spectroscopic properties, such as radiative transition probability, calculated and measured radiative lifetimes and cross-sections of 1.5 $\mu\textrm{m}$ and 2.7 $\mu\textrm{m}$ emissions were analyzed. Enhanced quantum efficiencies of some electronic transitions were evident mainly because of the low vibrational phonon energy ($~500cm^{-1}$) inherent in the host glasses. This seems to be the main reason for obtaining the 2.7 $\mu\textrm{m}$ luminescence which is normally quenched in the conventional oxide glasses. In addition, green and red fluorescence emissions were observed through the frequency upconversion processes of the 798 nm excitation. Non-radiative transition due to the multiphonon relaxation is a dominant lifetime-shortening mechanism in the 4f-4f transitions in $Er^{3+}$ ion except for the $^4S_{3/2}{\rightarrow}^4I_{15/2}$ transition where a non-radiative transfer to band-gap excitation of the host glasses is dominant. Melting of glasses under an inert gas atmosphere and (or) addition of the typical glass-network former into glasses is necessary in order to enhance the quantum efficiency of the transition.

• Korean Chemical Engineering Research
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• v.60 no.3
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• pp.327-333
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• 2022

In this study, silicon/carbon nanotube/carbon (Si/CNT/C) composites for anode were prepared to improve the volume expansion of silicon used as a high-capacity anode material. Si/CNT were prepared by electrostatic attraction of the positively charged Si and negatively charged CNT and then hydrothermal synthesis was performed to obtain the spherical Si/CNT/C composites. Poly(vinylidene fluoride) (PVDF), polyacrylic acid (PAA), and styrene butadiene rubber (SBR) were used as binders for electrode preparation, and coin cell was assembled using 1.0 M LiPF₆ (EC:DMC:EMC = 1:1:1 vol%) electrolyte and fluoroethylene carbonate (FEC) additive. The physical properties of Si/CNT/C anode materials were analyzed using SEM, EDS, XRD and TGA, and the electrochemical performances of lithium-ion batteries were investigated by charge-discharge cycle, rate performance, dQ/dV and electrochemical impedance spectroscopy tests. Also, it was confirmed that both capacity and rate performance were significantly improved using the PAA/SBR binder and 10 wt% FEC-added electrolyte. It is found that Si/CNT/C have the reversible capacity of 914 mAh/g, the capacity retention ratio of 83% during 50 cycles and the rate performance of 70% in 2 C/0.1 C.

• Conservation Science in Museum
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• v.20
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• pp.77-92
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• 2018

A stone seated bodhisattva (Sinsu5971) was discovered in Pyeongchang-gun, Gangwon-do in 1974 and was transferred to the Chuncheon National Museum upon its opening in 2002. The statue had damage to wide areas and was thus difficult to restore. This study utilized 3D scanning and 3D printing technologies to identify the overall form of the statue and the degree of damage, which allowed the restoration of lost portions that otherwise could not have been accurately restored to their original shape. Prior to the conservation treatment, the pigments used to decorate the surface were investigated using an optical microscope, and their main components were analyzed with a p-XRF (Potable X-ray Fluorescence Analyzer). The deteriorated lacquered surface was stabilized using animal glue and consolidated with stone strengthener (OH-100). The investigation found that the surface of the statue was made of zeolite that was lacquered and then gilded. As for pigments, white lead was used for the white color and red lead and cinnabar were used for red. The lost portions were redesigned by mirroring the remaining parts with 3D technologies. However, it was difficult to affix the 3D printing outputs to the statue without visible gaps since the damaged parts suffered flection. The portions of the outputs to be connected to the statue were thus modified and supplemented. It was also difficult to collect data on the properties of 3D printing materials due to the lack of previous in-depth study. These obstacles are subjects for further study.

• Journal of Sensor Science and Technology
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• v.24 no.6
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• pp.404-411
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• 2015

A stoichiometric mixture of evaporating materials for $BaAl_2Se_4$ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, $BaAl_2Se_4$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperatures were $610^{\circ}C$ and $410^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of $BaAl_2Se_4$ single crystal thin films measured from Hall effect by van der Pauw method are $8.29{\times}10^{-16}cm^{-3}$ and $278cm^2/vs$ at 293 K, respectively. The temperature dependence of the energy band gap of the $BaAl_2Se_4$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)=3.4205eV-(4.3112{\times}10^{-4}eV/K)T^2/(T+232 K)$. The crystal field and the spin-orbit splitting energies for the valence band of the $BaAl_2Se_4$ have been estimated to be 249.4 meV and 263.4 meV, respectively, by means of the photocurrent spectra and the Hopfield quasicubic model. These results indicate that the splitting of the ${\Delta}so$ definitely exists in the ${\Gamma}_5$ states of the valence band of the $BaAl_2Se_4/GaAs$ epilayer. The three photocurrent peaks observed at 10 K are ascribed to the $A_1$-, $B_1$-exciton for n =1 and $C_{31}$-exciton peaks for n=31.

• Journal of Korean Ophthalmic Optics Society
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• v.19 no.1
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• pp.43-49
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• 2014

Purpose: The physical and optical characteristics of hydrophilic contact lens polymerized with addition of glycerin and PVP(polyvinylpyrrolidone) in the basic hydrogel contact lens material were evaluated. Methods: This study used glycerin and PVP(polyvinylpyrrolidone) with the cross-linker EGDMA (ethylene glycol dimethacrylate), HEMA (2-hydroxyethyl methacrylate) and the initiator AIBN (azobisisobutyronitrile) for copolymerization. Results: Measurements of the physical characteristics of the copolymerized material including PVP(polyvinylpyrrolidone) showed the refractive index of 1.4382~1.4288, tensile strength of 0.3446~2542 kgf and water content and contact angle of sample showed the increase of 13.49% and decrease of 21.44% independently. And also, the physical characteristics of the copolymerized material including glycerin showed the refractive index of 1.4330~1.4328, tensile strength of 0.2974~0.2854 kgf, water content 35.58~36.53% and contact angle of sample showed the decrease of 37.64%. Conclusions: Based on the results of this study, the produced copolymers is suitable for conventional lens with high wettability. Also, glycerin minimized the changes of water content and refractive index at the same time, increased the wettability of the hydrogel lens materials.

• Journal of Periodontal and Implant Science
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• v.42 no.3
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• pp.81-87
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• 2012

Purpose: The characteristics of oxidized titanium (Ti) surfaces varied according to treatment conditions such as duration time and temperature. Thermal oxidation can change Ti surface characteristics, which affect many cellular responses such as cell adhesion, proliferation, and differentiation. Thus, this study was conducted to evaluate the surface characteristics and cell response of thermally treated Ti surfaces. Methods: The samples were divided into 4 groups. Control: machined smooth titanium (Ti-S) was untreated. Group I: Ti-S was treated in a furnace at $300^{\circ}C$ for 30 minutes. Group II: Ti-S was treated at $500^{\circ}C$ for 30 minutes. Group III: Ti-S was treated at $750^{\circ}C$ for 30 minutes. A scanning electron microscope, atomic force microscope, and X-ray diffraction were used to assess surface characteristics and chemical composition. The water contact angle and surface energy were measured to assess physical properties. Results: The titanium dioxide ($TiO_2$) thickness increased as the treatment temperature increased. Additional peaks belonging to rutile $TiO_2$ were only found in group III. The contact angle in group III was significantly lower than any of the other groups. The surface energy significantly increased as the treatment temperature increased, especially in group III. In the 3-(4,5-Dimethylthiazol- 2-yl)-2,5-diphenyltetrazolium bromide assay, after 24 hours of incubation, the assessment of cell viability showed that the optical density of the control had a higher tendency than any other group, but there was no significant difference. However, the alkaline phosphatase activity increased as the temperature increased, especially in group III. Conclusions: Consequently, the surface characteristics and biocompatibility increased as the temperature increased. This indicates that surface modification by thermal treatment could be another useful method for medical and dental implants.

• Journal of the Korean Vacuum Society
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• v.22 no.2
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• pp.79-85
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• 2013

Rare earth ions, either $Eu^{3+}$ or $Dy^{3+}$-doped $CaMoO_4$ phosphors were synthesized by using the solid-state reaction method. The crystalline structure of all the phosphor powders, irrespective of the type and concentration of activator ions, was found to be a tetragonal system with the main diffraction peak at (112) plane. For $Eu^{3+}$-doped $CaMoO_4$ phosphors, the grain particles showed an increasing tendency and the pebble-like patterns with a very homogeneous size distribution in the range of 0.01~0.10 mol of $Eu^{3+}$ ions concentration, and the excitation spectra were composed of a broad band centered at 311 nm and weak multiline peaked in the range of 360~470 nm. The dominant emission spectrum was the strong red emission centered at 618 nm due to the $^5D_0{\rightarrow}^7F_2$ transition of $Eu^{3+}$ ions. For $Dy^{3+}$-doped $CaMoO_4$ powders, excitation spectra showed a charge transfer band centered at 303 nm and relatively weak bands resulting from the transitions of $Dy^{3+}$ ions and the main yellow emission spectrum was observed at 578 nm, which was assigned to the $^4F_{9/2}{\rightarrow}^7H_{13/2}$ transition of $Dy^{3+}$ ions.

• Journal of the Microelectronics and Packaging Society
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• v.13 no.4
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• pp.51-56
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• 2006

Polymer light emitting diodes (PLEDs) with ITO/EDOT:PSS/PVK/PFO-poss/LiF/Al structures were prepared by the spin coating method on ITO(indium tin oxide)/glass substrates. PFO-poss[Poly(9,9-dioctylfluorenyl-2,7-diyl) end capped with poss] was used as light emitting polymer. PVK[poly(N-vinyl carbazole)] and PEDOT:PSS [poly(3,4-ethylenedioxythiophene):poly(styrene sulfolnate)] polymers were used as the hole injection and transport materials. The effect of PFO-poss concentration and the heating temperatures on the electrical and optical properties of the devices were investigated. At the same concentration of PFO-poss solution, the current density and luminance of PLED device tend to increase as the annealing temperature increase from $100^{\circ}C$ to $200^{\circ}C$. The maximum luminance was found to be about 958 cd/m2 at 13V for the PLED device with 1.0 wt% PFO-poss at the annealing temperature of $200^{\circ}C$. In addition, the PLED device showed bluish white emission through the strong greenish peak with 523 nm in wavelength. As the concentration of PFO-poss increase from 0.5 wt% to 1.0 wt% and temperature of PLEDs increase from $100^{\circ}C$ to $200^{\circ}C$, the emission color tend to be shifted from blue with (x, y) = (0.17,0.14) to bluish white with (x, y) : (0.29,0.41) in CIE color coordinate.