• Journal of the Korean Crystal Growth and Crystal Technology
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• v.23 no.5
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• pp.255-264
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• 2013

Cobalt aluminate ($CoAl_2O_4$) is a highly stable pigment with excellent resistance to light, weather, etc., which has resulted in widespread use as a ceramic pigment. Due to the unique optical characteristics, $CoAl_2O_4$ is generally used as a coloring agent to decorate porcelain products, glass, paints and plastics. Here, $CoAl_2O_4$ pigments were synthesized by polymerized complex method and solid state reaction. Then $CoAl_2O_4$ pigment were grinded using the attrition milling with 1 mm size zirconia ball for 3 hours. The attrition milling process was performed at the constant speed of 800 rpm and ball to powder weight ratio (BPR) was 100 : 1. The characteristics of synthesized pigment were analyzed by X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM), transmission electron microscopy (TEM), particle size analyser (PSA) and CIE $L^*a^*b^*$. The XRD patterns of $CoAl_2O_4$ show single phase spinel structure. The particle size of $CoAl_2O_4$ measured by FE-SEM, TEM and PSA analysis was in the range of 100~200 nm. The blue color of obtained $CoAl_2O_4$ pigments could be confirmed through CIE $L^*a^*b^*$ measurement.

• Journal of the Institute of Electronics Engineers of Korea SP
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• v.48 no.3
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• pp.1-12
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• 2011

Large-sized multi-touch screen is usually made using infrared rays. That is because it has technical constraints or cost problems to make the screen with the other ways using such as existing resistive overlays, capacitive overlay, or acoustic wave. Using infrared rays to make multi-touch screen is easy, but is likely to have technical limits to be implemented. To make up for these technical problems, two other methods were suggested through Surface project, which is a next generation user-interface concept of Microsoft. One is Frustrated Total Internal Reflection (FTIR) which uses infrared cameras, the other is Diffuse Illumination (DI). FTIR and DI are easy to be implemented in large screens and are not influenced by the number of touch points. Although FTIR method has an advantage in detecting touch-points, it also has lots of disadvantages such as screen size limit, quality of the materials, the module for infrared LED arrays, and high consuming power. On the other hand, DI method has difficulty in detecting touch-points because of it's structural problems but makes it possible to solve the problem of FTIR. In this thesis, we study the algorithms for effectively correcting the distort phenomenon of optical lens, and image processing algorithms in order to solve the touch detecting problem of the original DI method. Moreover, we suggest calibration algorithms for improving the accuracy of multi-touch, and a new tracking technique for accurate movement and gesture of the touch device. To verify our approaches, we implemented a table-based multi touch screen.

• Journal of the Microelectronics and Packaging Society
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• v.21 no.4
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• pp.105-110
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• 2014

It is required to improve the efficiency and the reliability of the polymer solar cells (PSCs) as the energy saving optical device for the future application of the smart farm facilities. In this study, we fabricated the bulk hetero junction PSCs with organic passivation film layer for the reliability improvement of the devices. The effects of the passivation layer on the electrical properties of the PSCs were studied. The materials of passivation layer are composed of poly vinyl alcohol (PVA) and ammonium dichromate, and the passivation films were fabricated by the spin coating method on the P3HT:$PC_{61}BM$/LiF/Al substrate. The prepared structure of the device is the glass/ITO/PEDOT:PSS/P3HT:$PC_{61}BM$/LiF/Al/passivation layer. The performances of the PSCs with the organic passivation film showed better electrical properties compared with the PSCs without passivation layers. The power conversion efficiency (PCE) values of passivated PSCs decreased from 3.0 to 1.3% after air exposure for 140 hrs. In contrast, the PCE values for the devices without passivation decreased sharply from 3.5 to 0.1% under the same exposure condition.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.16 no.5
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• pp.189-197
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• 2006

A stoichiometric mixture of evaporating materials for $AgGaSe_2$ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, $AgGaSe_2$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the hot wall epitaxy(HWE) system. The source and substrate temperatures were $630^{\circ}C\;and\;420^{\circ}C$, respectively. The temperature dependence of the energy band gap of the $AgGaSe_2$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)=1.9501eV-(8.79x10^{-4}eV/K)T^2(T+250K)$. After the as-grown $AgGaSe_2$ single crystal thin films was annealed in Ag-, Se-, and Ga-atmospheres, the origin of point defects of $AgGaSe_2$ single crystal thin films has been investigated by the photoluminescence (PL) at 10K. The native defects of $V_{Ag},\;V_{Se},\;Ag_{int},\;and\;Se_{int}$ obtained by PL measurements were classified as a donors or accepters type. And we concluded that the heat-treatment in the Ag-atmosphere converted $AgGaSe_2$ single crystal thin films to an optical p-type. Also, we confirmed that Ga in $AgGaSe_2$/GaAs did not form the native defects because Ga in $AgGaSe_2$ single crystal thin films existed in the form of stable bonds.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.26 no.6
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• pp.225-231
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• 2016

The valence band maximum (VBM) and conduction band minimum (CBM) of Al-doped GaInAsSb alloys substrated on GaSb are calculated by using an analytic approximation based on the tight binding method. The relative positions of the VBM and CBM between Al-GaInASSb and GaSb determine band alignement type, valence band offset (VBO) and conductin band offset (CBO) for the heterojunctions. In this study, aluminium doping is assumed to be substituted in the cation site and limited up to 20 % because it can easily oxidize and degrade materials. It is found that the Al-doped alloys exhibit type-II band alignments over the entire composition range and make the band gaps increase, whereas the VBO and CBO decrease. The decreasing rate of VBO is higher than that of CBO, which implies the Al components play a decisive role in controlling electrons at the interface. The Al-dopled GaInAsSb alloy has a direct band gap induced by $E({\Gamma})$ with a considerable distance from the E(L) and E(X), however, $E({\Gamma})$ approaches to E(L) and E(X) in the high Sb concentration (Sb > 0.7-0.8) which might affect the electron mobility and degrade the optical quality.

• Journal of Korean Dental Science
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• v.8 no.2
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• pp.65-73
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• 2015

Purpose: Parathyroid hormone (PTH) therapy has drawn attention, as an alternative to anti-resorptive drugs since PTH accelerates bone density by anabolic action. The purpose of this study was to identify the effect of intermittent PTH administration on jaw bones of rat undergone bilateral ovariectomy. Materials and Methods: Nine female Sprague-Dawley rats were divided into three groups. PTH group was ovariectomized (OVX) to induce osteoporosis and PTH $30{\mu}g/kg$ was administered 1 week after the surgery. In OVX group, ovariectomy was performed and only vehicle was administered by subcutaneous injection 3 times per week. Control group was subjected to sham surgery. The animals were sacrificed 8 weeks after the surgery and specimens were obtained from ilium and upper and lower jaw bones. Histological investigation was carried out by using an optical microscope and micro-computed tomography was taken to examine structural property changes in each bone sample. Result: In the ilium, the bone volume ratio (bone volume/total volume, BV/TV) of PTH, OVX and control groups was $53.75%{\pm}7.57%$, $50.61%{\pm}12.89%$, $76.20%{\pm}5.92%$ (P=0.061) and bone mineral density (BMD) was $1.12{\pm}0.09$, $0.88{\pm}0.48$, $1.38{\pm}0.07g/cm^3$ (P=0.061). In the mandible, BV/TV of PTH, OVX and control groups was $64.60%{\pm}12.17%$, $58.26%{\pm}9.63%$, $67.54%{\pm}14.74%$(P=0.670) and BMD was $1.21{\pm}0.17$, $1.19{\pm}0.13$, $1.27{\pm}0.18g/cm^3$ (P=0.587). In the maxilla, BV/TV of PTH, OVX and control groups was $61.19%{\pm}8.92%$, $52.50%{\pm}11.22%$, $64.60%{\pm}12.17%$ (P=0.430) and BMD was $1.20{\pm}0.11$, $1.11{\pm}0.16$, $1.21{\pm}0.17g/cm^3$ (P=0.561). No statistically significant difference was found in any variables in all groups. Histological observation revealed that the ilium in OVX group demonstrated sparsely formed trabecular bones compared with other groups. However, upper and lower trabecular bones did not present significant differences. Conclusion: Intermittent administration of PTH appears to affect the microstructure of rat jaw bones, but statistical significance was not found. However, the measurements in this study partly implicated the possible anabolic effect of PTH in vivo.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11a
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• pp.175-178
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• 2004

The stochiometric mixture of evaporating materials for the $ZnIn_2S_4$ single crystal thin film was prepared from horizontal furnace. To obtain the $ZnIn_2S_4$ single crystal thin film, $ZnIn_2S_4$ mixed crystal was deposited on throughly etched semi-insulating GaAs(100) in the Hot Wall Epitaxy(HWE) system. The source and substrate temperature were $610^{\circ}C$ and $450^{\circ}C$, respectively and the growth rate of the $ZnIn_2S_4$ sing1e crystal thin film was about $0.5\;{\mu}m/hr$. The crystalline structure of $ZnIn_2S_4$ single crystal thin film was investigated by photoluminescence and double crystal X-ray diffraction(DCXD) measurement. The carrier density and mobility of $ZnIn_2S_4$ single crystal thin film measured from Hall effect by van der Pauw method are $8.51{\times}10^{17}\;cm^{-3}$, $291\;cm^2/V{\cdot}s$ at $293_{\circ}\;K$, respectively. From the photocurrent spectrum by illumination of perpendicular light on the c - axis of the $ZnIn_2S_4$ single crystal thin film, we have found that the values of spin orbit splitting ${\Delta}S_O$ and the crystal field splitting ${\Delta}Cr$ were 0.0148 eV and 0.1678 eV at $10_{\circ}\; K$, respectively. From the photoluminescence measurement of $ZnIn_2S_4$ single crystal thin film, we observed free excition $(E_X)$ typically observed only in high quality crystal and neutral donor bound exciton $(D^{o},X)$ having very strong peak intensity The full width at half maximum and binding energy of neutral donor bound excition were 9 meV and 26 meV, respectively, The activation energy of impurity measured by Haynes rule was 130 meV.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.363-363
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• 2008

The development of dry etching process for sapphire wafer with plasma has been key issues for the opto-electric devices. The challenges are increasing control and obtaining low plasma induced-damage because an unwanted scattering of radiation is caused by the spatial disorder of pattern and variation of surface roughness. The plasma-induced damages during plasma etching process can be classified as impurity contamination of residual etch products or bonding disruption in lattice due to charged particle bombardment. Therefor, fine pattern technology with low damaged etching process and high etch rate are urgently needed. Until now, there are a lot of reports on the etching of sapphire wafer with using $Cl_2$/Ar, $BCl_3$/Ar, HBr/Ar and so on [1]. However, the etch behavior of sapphire wafer have investigated with variation of only one parameter while other parameters are fixed. In this study, we investigated the effect of pressure and other parameters on the etch rate and the selectivity. We selected $BCl_3$ as an etch ant because $BCl_3$ plasmas are widely used in etching process of oxide materials. In plasma, the $BCl_3$ molecule can be dissociated into B radical, $B^+$ ion, Cl radical and $Cl^+$ ion. However, the $BCl_3$ molecule can be dissociated into B radical or $B^+$ ion easier than Cl radical or $Cl^+$ ion. First, we evaluated the etch behaviors of sapphire wafer in $BCl_3$/additive gases (Ar, $N_2,Cl_2$) gases. The behavior of etch rate of sapphire substrate was monitored as a function of additive gas ratio to $BCl_3$ based plasma, total flow rate, r.f. power, d.c. bias under different pressures of 5 mTorr, 10 mTorr, 20 mTorr and 30 mTorr. The etch rates of sapphire wafer, $SiO_2$ and PR were measured with using alpha step surface profiler. In order to understand the changes of radicals, volume density of Cl, B radical and BCl molecule were investigated with optical emission spectroscopy (OES). The chemical states of $Al_2O_3$ thin films were studied with energy dispersive X-ray (EDX) and depth profile anlysis of auger electron spectroscopy (AES). The enhancement of sapphire substrate can be explained by the reactive ion etching mechanism with the competition of the formation of volatile $AlCl_3$, $Al_2Cl_6$ or $BOCl_3$ and the sputter effect by energetic ions.

• Journal of Gastric Cancer
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• v.18 no.2
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• pp.134-141
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• 2018

Purpose: Postoperative pancreatic fistula is a serious and fatal complication of gastrectomy for gastric cancer. Blunt trauma to the parenchyma of the pancreas can result from an assistant's forceps compressing and retracting the pancreas, which in turn may result in pancreatic juice leakage. However, no published studies have focused on blunt trauma to the pancreas during laparoscopic surgery. Our aim was to investigate the relationship between compression of the pancreas and pancreatic juice leakage in a swine model. Materials and Methods: Three female pigs were used in this study. The pancreas was gently compressed dorsally for 15 minutes laparoscopically with gauze grasped with forceps. Pancreatic juice leakage was visualized by fluorescence imaging after topical administration of chymotrypsin-activatable fluorophore in real time. Amylase concentrations in ascites collected at specified times was measured. In addition, pancreatic tissue was fixed with formalin, and the histology of the compressed sites was evaluated. Results: Fluorescence imaging enabled visualization of pancreatic juice leaking into ascites around the pancreas. Median concentrations of pancreatic amylase in ascites increased from 46 U/L preoperatively to 12,509 U/L 4 hours after compression. Histological examination of tissues obtained 4 hours after compression revealed necrotic pancreatic acinar cells extending from the surface to deep within the pancreas and infiltration of inflammatory cells. Conclusions: Pancreatic compression by the assistant's forceps can contribute to pancreatic juice leakage. These findings will help to improve the procedure for lymph node dissection around the pancreas during laparoscopic gastrectomy.

• The Journal of the Petrological Society of Korea
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• v.10 no.3
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• pp.202-211
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• 2001

Luminescence is a physical phenomenon exhibited by many non-conducting, crystalline materials, such as quartz and feldspar. Within the crystals, energy absorbed from ionising radiation frees electrons to move through the crystal lattice and some are trapped at defects in the lattice. Observable luminescence is produced by electrons, released from traps by stimulation by absorption of light, which recombine with lattice defects which act as luminescence centers - optically stimulated luminescence (OSL). In a similar way to thermoluminescence(TL) dating, controlled measurement of the OSL signal can provide a means of determining the time since the last exposure of a layer of sediment to sunlight, the age of the sediment. However, whereas in the thermoluminescence dating of sediment only part of the latent thermoluminescence signal is bleached by sunlight as the sediment is deposited and allowance must be made during the laboratory measurements for the light insensitive component, optically induced luminescence dating has the advantage of working only with light sensitive traps in the crystal. Determination of the time since deposition of Quaternary sediment samples from the OSL of quartz grains using blue light was performed. A series of experiments and recent developments relating OSL dating are described, beginning by identifying the features which make OSL signals suitable for the development of dating method. Additionally, there are suggestions as to future research for obtaining reliable ages and a comment on current best practice on procedures, with the dating results of Quaternary sediment.