• Publications of The Korean Astronomical Society
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• v.27 no.3
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• pp.95-103
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• 2012

We analyzed the current status of the telescope control system (TCS2) of the 1.8 m telescope in Bohyunsan Optical Astronomy Observatory (BOAO), and suggest a new TCS (TCS3) for the long term development of BOAO. The TCS2 was constructed in 1998 to replace the TCS1 which was installed with the telescope itself at the commencement of BOAO. One of the important parts of TCS is PMAC (Programmable Multi-Axis Controller), which is a general-purpose multi-axis motion controller. PMAC provides the direct interactive communication environment permitting users to command the controller directly with simple operations. This makes the setup, debugging, and diagnostics very easy. The TCS2 was operated stable for a long time, but the hardware and TCS computers have been deteriorated and are out of date now. The new TCS3 needs to be constructed based on a modern computer system. And functions such as pre-calculations of telescope limiting position, interworking with virtual observatory tools, and using GUI, etc should be added. Construction of the TCS3 will be a step creating a better observation environment for the Korean astronomical society.

• Journal of the Semiconductor & Display Technology
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• v.16 no.2
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• pp.94-97
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• 2017

Amorphous Si has been used for data processing circuits in flat panel displays. However, low mobility of the amorphous Si is a limiting factor for the data transmission speed. Metal oxides such as ZnO have been studied to replace the amorphous Si. ZnO is a wide bandgap (3.3 eV) semiconductor with high mobility and good optical transparency. When ZnO is grown by sputtering with $O_2$ as an oxidizer, there can be many ion species arising from $O_2$ decomposition. $O^+$, $O_2{^+}$, and $O^-$ ions are expected to be the most abundant species, and it is not clear which one contributes to the ZnO growth. We applied alternating substrate voltage (0 V and -70 V) during sputtering growth. We studied changes in transistor characteristics induced by the voltage switching. We also compared ZnO grown by dc and rf sputtering. ZnO film was grown at $450^{\circ}C$ substrate temperature. ZnO thin-film transistor grown with these methods showed $7.5cm^2/Vsec$ mobility, $10^6$ on-off ratio, and -2 V threshold voltage.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.43 no.5 s.347
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• pp.84-93
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• 2006

Ethernet-PON is an emerging access network technology that provides a low-cost method of deploying optical access lines between OLT and ONUs. It has a point-to-multipoint and multipoint-to-point architecture in downstream and upstream direction, respectively. Therefore, downstream packets are broadcast from an OLT toward all ONUs sithout collision. On the other hand, since alt ONUs share a common channel, the collision may be occurred for the upstream transmission. Therefore, earlier efforts on Ethernet-PON have been concentrated on an upstream MAC protocol to avoid collision. But it is needed to control downstream traffic in practical access network, where the network provider limits available bandwidth according to the number of users. In this paper, we propose a traffic control scheme for supporting the fairness of the downstream bandwidth. The objective of this algorithm is to guarantee the fairness of ONUs while maintaining good performance. In order to do this, we define the service probability that considers the past traffic information for downstream, the number of tokens and the relative size of negotiated bandwidth. We develop the simulation model for Ethernet-PON to evaluate the rate-limiting algorithm by using AWESIM. Some results are evaluated and analyzed in terms of defined fairness factor, delay and dropping rate under various scenario.

• The Journal of Korean Academy of Prosthodontics
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• v.38 no.5
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• pp.595-605
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• 2000

Dental ceramics have good aesthetics, biocompatibility, low thermal conductivity, abrasion resistance, and color stability. However poor resistance to fracture and shrinkage during firing process have been limiting factors in their use, particularly in multiunit ceramic restorations. A new method for making all-ceramic crowns that have high strength and low processing shrinkage has been developed and is referred to as the Vita In-Ceram method. This study was performed to investigate the effect of $CeO_2$ addition in borosilicate glasses on the strength of alumina-glass composites. Porous alumina compacts were prepared by slip casting and sintered at $1,100^{\circ}C$ for 2 hours. Dense composites were made by infiltration of molten glass into partially sintered alumina at $1,140^{\circ}C$ for 4 hours. Specimens were polished sequentially from #800 to #2000 diamond disk. and the final surface finishing on the tensile side was received an additional polishing sequence through $1{\mu}m$ diamond paste. Biaxial flexure test was conducted by using ball-on-three-ball method at a crosshead speed of 0.5mm/min. To examine the microstructural aspect of crack propagation in the alumina-glass composites, Vickers-produced indentation crack was made on the tensile surface at a load of 98.0 N and dwell time of 15 sec, and the radial crack patterns were examined by an optical microscope and a scanning electron microscope. The results obtained were summarized as follows; 1. The porosity rates of partially sintered alumina decreased with the rising of firing temperature. 2. The maximum biaxial flexure strength of 423.5MPa in alumina-glass composites was obtained with an addition of 3 mol% $CeO_2$ in glass composition and strength values showed the aspect of decrease with the increase of $CeO_2$ content. 3 The biaxial flexure strength values of alumina-glass composites were decreased with rising the firing temperature. 4. Observation of the fracture surfaces of alumina-glass composites indicated that the enhancement of strength in alumina-glass composites was due to the frictional or geometrical inter-locking of rough fracture surfaces and ligamentary bridging by intact islands of materials left behind the fracture front.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.351-352
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• 2011

그래핀(Graphene)은 2차원 평면구조의 $sp^2$ 탄소 결합으로 이루어진 물질이다. 일반적으로 그래핀은 탄소 원자 한층 정도의 얇은 두께를 가지면서 강철의 100배 이상 높은 강도, 다이아몬드보다 2배 이상 뛰어난 열 전도성, 그리고 규소보다 100배 이상 빠른 전자이동도 등의 매우 우수한 특성을 지닌다. 그래핀을 합성하거나 얻는 방법에는, 기계적 박리법(Micro mechanical exfoliation), 산화흑연(graphite oxide)을 이용한 reduced graphene oxide(RGO)방법과 탄화 규소(SiC)를 이용한 epitaxial growth 방법 등이 있지만, 대 면적화가 어렵거나 구조적 결함이 큰 문제점이 있다. 반면, 탄화수소(hydrocarbon)를 탄소 공급원으로 하는 열화학 기상 증착법(Thermal chemical vapor deposition, TCVD)은 구조적 결함이 상대적으로 적으면서 대 면적화가 가능하다는 이점 때문에 최근 가장 많이 이용되고 있는 방법이다. TCVD를 이용, 니켈, 몰리브덴, 금, 코발트 등의 금속에서 그래핀 합성연구가 보고되었지만, 대부분 수 층(fewlayer)의 그래핀이 합성되었다. 하지만, 구리 촉매를 이용하는 것이 단층 그래핀 합성에 매우 효율적이라는 연구결과가 보고되었다. 구리의 경우, 낮은 탄소융해도(solubility of carbon) 때문에 표면에서 self limiting 과정을 통하여 단층 그래핀이 합성된다. 그러나 단층 그래핀 일지라도 면저항(sheet resistance)이 매우 높고, 이론적 계산값에 비해 전자이동도(electron mobility)가 낮게 측정된다. 이러한 원인은 구조적 결함에서 기인된 것으로써 산업으로의 응용을 어렵게 만들기 때문에 양질의 단층 그래핀 합성연구는 필수적이다[1,2]. 본 연구에서는 TCVD를 이용하여 구리 포일(25 ${\mu}m$, Alfa Aeser) 위에 메탄가스를 탄소공급원으로 하여 수소를 함께 주입하고, 메탄가스의 양과 합성시간, 열처리 시간을 조절하면서 균일한 단층 그래핀을 합성하였다. 합성된 그래핀을 $SiO_2$ (300 nm)기판위에 전사(transfer)후 라만 분광법(raman spectroscopy)과 광학 현미경(optical microscope)을 통하여 분석하였다. 그 결과, 열처리 시간이 증가할수록 촉매로 사용된 구리 포일의 grain size가 커짐을 확인하였으며, 구리 포일 위에 합성된 그래핀의 grain size는, 구리 포일의 grain size에 의존하여 커짐을 확인하였다. 또한 동일한 grain 내의 그래핀은 균일한 층으로 합성되었다. 이는 기계적 박리법, RGO 방법, epitaxial growth 방법으로 얻은 그래핀과 비교하여 매우 뛰어난 결정성을 지님이 확인되었다. 본 연구를 통하여 면적이 넓으면서도 결정성이 매우 뛰어난 양질의 단층 그래핀 합성 방법을 확립하였다.