• 전기의세계
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• 제28권4호
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• pp.53-63
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• 1979

Interface recombination velocity in $Al_{x}$G $a_{1-x}$ As-GaAs and $Al_{0.85}$, G $a_{0.15}$ As-GaA $s_{1-y}$S $b_{y}$ heterojunction systems is studied as a function of lattice mismatch. The results are applied to the design of highly efficient III-V heterojunction solar cells. A horizontal liquid-phase epitaxial growth system was used to prepare p-p-p and p-p-n $Al_{x}$G $a_{1-x}$ As-GaA $s_{1-y}$S $b_{y}$-A $l_{x}$G $a_{1-x}$ As double heterojunction test samples with specified values of x and y. Samples were grown at each composition, with different GaAs and GaAs Sb layer thicknesses. A method was developed to obtain the lattice mismatch and lattice constants in mixed single crystals grown on (100) and (111)B oriented GaAs substrates. In the AlGaAs system, elastic lattice deformation with effective Poisson ratios .mu.$_{eff}$ (100=0.312 and .mu.$_{eff}$ (111B) =0.190 was observed. The lattice constant $a_{0}$ (A $l_{x}$G $a_{1-x}$ As)=5.6532+0.0084x.angs. was obtained at 300K which is in good Agreement with Vegard's law. In the GaAsSb system, although elastic lattice deformation was observed in (111) B-oriented crystals, misfit dislocations reduced the Poisson ratio to zero in (100)-oriented samples. When $a_{0}$ (GaSb)=6.0959 .angs. was assumed at 300K, both (100) and (111)B oriented GaAsSb layers deviated only slightly from Vegard's law. Both (100) and (111)B zero-mismatch $Al_{0.85}$ G $a_{0.15}$As-GaA $s_{1-y}$S $b_{y}$ layers were grown from melts with a weight ratio of $W_{sb}$ / $W_{Ga}$ =0.13 and a growth temperature of 840 to 820 .deg.C. The corresponding Sb compositions were y=0.015 and 0.024 on (100) and (111)B orientations, respectively. This occurs because of a fortuitous in the Sb distribution coefficient with orientation. Interface recombination velocity was estimated from the dependence of the effective minority carrier lifetime on double-heterojunction spacing, using either optical phase-shift or electroluminescence timedecay techniques. The recombination velocity at a (100) interface was reduced from (2 to 3)*10$^{4}$ for y=0 to (6 to 7)*10$^{3}$ cm/sec for lattice-matched $Al_{0.85}$G $a_{0.15}$As-GaA $s_{0.985}$S $b_{0.015}$ Although this reduction is slightly less than that expected from the exponential relationship between interface recombination velocity and lattice mismatch as found in the AlGaAs-GaAs system, solar cells constructed from such a combination of materials should have an excellent spectral response to photons with energies over the full range from 1.4 to 2.6 eV. Similar measurements on a (111) B oriented lattice-matched heterojunction produced some-what larger interface recombination velocities.ities.ities.s.

• 한국광학회:학술대회논문집
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• 한국광학회 2001년도 제12회 정기총회 및 01년도 동계학술발표회
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• pp.6-11
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• 2001

More than ten kinds of oxide thin films and their heterostructure have been successfully fabricated on SrTiO$_3$(001) substrates by laser molecular beam epitaxy (laser MBE). Measurements of atomic force microscopy (AFM), high-resolution transmission electron microscopy (HRTEM) and X-ray small-angle reflectivity reveal that the surfaces and interfaces are atom-level-smooth. The unit cell layers and the lattice structure are perfect. The electrical and optical properties of BaTiO$_3$-x thin films and BaTiO$_3$/SrTiO$_3$ (BTO/STO) superlattices were examined. The all-perovskite oxide P-N junctions have been successfully fabricated and the better I-V curves were observed.

• 한국재료학회지
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• 제12권11호
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• pp.875-879
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• 2002

$Pb_{1-x}$ $Cd_{x}$ $I_2$ (x=0.0, 0.2, 0.5, 0.7, 0.9, 1.0) single crystals were grown by using Bridgman method and their structural and optical properties were investigated from the measurement of X-ray diffraction, optical absorption and photoluminescence. As-grown single crystals have hexagonal closed packed layered structure. The values of lattice constant c decrease with increasing composition x. Direct and indirect transition optical energy band gaps are calculated from optical absorption spectra measured at room temperature. They increase exponentially from 2.3eV to 3.2 eV with increasing composition x. The energies of photoluminescence peak due to donor bound exciton measured at 6K increase with increasing composition . However, the peak energies of donor-acceptor pair (DAP) are independent of the optical energy band gaps of $Pb_{1-x}$/$Cd_{x}$ $I_2$ single crystals.

• 전기학회논문지
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• 제57권1호
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• pp.92-97
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• 2008

This is a research to apply 1310nm single-mode optical fiber to a temperature sensor. The existing study of optical fiber sensor is complicated because it was made with various equipment. To vary scattering, the variation of optical frequency is measured by using Bragg(lattice) or pulse generator and also bulk system is created by YAG laser but there were some difficulties creating experimental environment and it was a problem that the stability of measured data was low. The temperature sensor system using the suggested sBs(stimulated Brillouin scattering:sBs) from this research is much more simplified straight-line system. To improve the trust and accuracy of noises from optical frequency and unclear results, it was analysed by using Neuro-Fuzzy algorithm. we tried to get more correct data than existing system. sBs measure that optical frequency changed due to the variation of temperature. The analyzed change rate of outcome by Fuzzy theory is 1.1 MHz.

• 한국통신학회논문지
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• 제17권6호
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• pp.539-547
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• 1992

본 논문에서는 초고주파 혹은 광대역신호를 고속으로 필터링해야하는 분야를 염두에두고, 광파이버를이용한 지연소자와 방향성결합기(directional coupler)를 구성단위로 하는 광파이버필터를 제안한다. 반송과 신호를 보내는 광원으로서는 시스템의 간편을 위해 인코히런트광을 사용하는 것으로 하였다. 광파이버필터의 설계방법에 대해서는 그 기본 구성요소인 방향성결합기의 특성(성질)때문에 일반 디지탈필터와는 다른 설계법이 요구되어 진다. 본 논문에서는 방향성 견한기의 제약조건을 고려하면서, 광신호전력을 최대한 효율적으로 이용하는 설계방법을 목표로 하여 직접형과 Lattice형 광파이버필터의 구성법을 제안하고 그때의 실현조건과 설계 공식을 유도하였다.

• 한국재료학회지
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• 제21권2호
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• pp.73-77
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• 2011

Specific heat of a crystal is the sum of electronic specific heat, which is the specific heat of conduction electrons, and lattice specific heat, which is the specific heat of the lattice. Since properties such as crystal structure and Debye temperature do not change even in the superconducting state, the lattice specific heat may remain unchanged between the normal and the superconducting state. The difference of specific heat between the normal and superconducting state may be caused only by the electronic specific heat difference between the normal and superconducting states. Critical temperature, at which transition occurs, becomes lower than $T_{c0}$ under the influence of a magnetic field. It is well known that specific heat also changes abruptly at this critical temperature, but magnetic field dependence of jump of specific heat has not yet been developed theoretically. In this paper, specific heat jump of superconducting crystals at low temperature is derived as an explicit function of applied magnetic field H by using the thermodynamic relations of A. C. Rose-Innes and E. H. Rhoderick. The derived specific heat jump is compared with experimental data for superconducting crystals of $MgCNi_3$, $LiTi_2O_4$ and $Nd_{0.5}Ca_{0.5}MnO_3$. Our specific heat jump function well explains the jump up or down phenomena of superconducting crystals.

• 한국광학회지
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• 제15권4호
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• pp.309-312
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• 2004

레이저 홀로그래피 방법과 반응성 이온식각 방법(RIE: reactive ion etching)을 사용하여 2차원 광자결정을 제작하였다. 육변형(hexagonal) 및 사변형(square) 광자결정 격자는 첫 번째 레이저 노광 후 시편을 각각 60도 및 90도 회전하고 다시 두 번째 노광을 통하여 제작할 수 있었다. 또한 사변형 광자결정 격자의 나노컬럼(nanocolumn)의 크기와 주기는 레이저 입사각에 따라 각각 125∼145 nm, 220∼290 nm로 미세한 조정이 가능하였다. 마지막으로 CH$_4$/H$_2$ 가스를 이용한 반응성 이온식각 방법을 통하여 aspect ratio가 1.5 이상인 InP/InGaAsP nanocolumn을 제작 할 수 있었다.

• 한국세라믹학회지
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• 제40권9호
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• pp.855-858
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• 2003

Liquid Phase Epitaxy (LPE)법으로 Yttrium Iron Garnet (YIG:Y$_3$Fe$_{5}$O$_{12}$) 단결정 후막을 성장시킬 때 PbO계 응제에서는 Pb 이온이 성장되는 결정내로 혼입되어 성장된 막의 격자상수를 증가시키고, 일축 자기이방성 상수값(Ku)을 변화시키거나 전기 전도도를 변화시킨다. 또한 광 흡수율을 증가시키는 등의 성장된 막의 물성에 악영향을 미친다. 열처리 후 Pb 이온의 휘발로 인한 결정내의 농도감소로 성장된 단결정 후막의 격자상수가 평균 0.0115$\AA$ 감소하였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.38-38
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• 2009

Characteristics of the photonic bandgaps (PBGs) in two-dimensional photonic crystals (2D PCs) with a hexagonal lattice have theoretically studied using a finite difference time domain (FDTD) simulation. In this research, we propose a concept of optical coverage ratio (OCR) as a new structural parameter to determine the PBGs for E-polarized light. The OCR is an optically compensated filling factor. It is possible to normalize the PBGs of 2D PCs by introducing the OCR.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2003년도 추계학술발표강연 및 논문개요집
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• pp.121-121
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• 2003

NiO thin films are very attractive for use as an antiferromagnetic layer, p-type transparent conducting films, in electrochromic devices and functional sensor layer for chemical sensors, due to their excellent chemical stability, as well as optical, electrical and magnetic properties. In addition, (100)- and (111)-oriented NiO films can be used as buffer layers on which to deposit other oriented oxide films, such as c-axis-oriented perovskite-type ferromagnetic films and superconducting films, because of the similarity in symmetry of oxygen ion lattice and lattice constants between the NiO films and the oriented oxide films. Thus, controlling the crystallographic orientation and surface roughness of the NiO films for a buffer layer are very important.