• Korean Journal of Optics and Photonics
• /
• v.16 no.1
• /
• pp.79-84
• /
• 2005

To increase the tolerance for passive fiber alignment, a single mode polymer waveguide with a large core structure is demonstrated. The large core waveguide is designed to have a mode profile comparable to that of a thermally expanded core (TEC) fiber, and it can be connected to a high-contrast waveguide through an adiabatic transition taper structure. From a waveguide with a rectangular core of 25 ${\times}$ 25 ${\mu}{\textrm}{m}$$^2$, a single mode propagation is observed when the index contrast is as low as 0.0005. A UV-cured injection molding method is used to fabricate the thick core structure. Due to the large mode size, the insertion loss of the device is below 0.5 dB until the lateral displacement of the TEC fiber is 4.5 ${\mu}{\textrm}{m}$. The low insertion loss is important for reproducible passive alignment.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2013.08a
• /
• pp.244.1-244.1
• /
• 2013

The p-type GaN which act as a hole injection layer in GaN-based LEDs has fundamental problems. The first one arises from the difficulty in growing a highly doped p-GaN (with a carrier concentration exceeding ~1018 $cm^{-3}$). And the second one is the absence of appropriate metals or conducting oxides having a work function that is larger than that of p-type GaN (7.5 eV). Moreover, the LED efficiency is decreases gradually as the injection current increases (the so-called 'efficiency droop' phenomenon). The efficiency droop phenomenon in InGaN quantum wells (QWs) has been a large obstacle that has hindered high-efficiency operation at high current density. In this study, we introduce the new approaches to improve the light-output power of LEDs by using graphene oxide sheets. Graphene oxide has many functional groups such as the oxygen epoxide, the hydroxyl, and the carboxyl groups. Due to nature of such functional groups, graphene oxide possess a lot of hole carriers. If graphene oxide combine with LED top surface, graphene oxide may supply hole carriers to p-type GaN layer which has relatively low free carrier concentration less than electron concentration in n-type GaN layer. To prove the enhancement factor of graphene oxide coated LEDs, we have investigated electrical and optical properties by using ultra-violet photo-excited spectroscopy, confocal scanning electroluminescence microscopy.

• Design & Manufacturing
• /
• v.16 no.3
• /
• pp.58-65
• /
• 2022

Micro-fluidic chip has been fabricated by lithography process on silicon or glass wafer, casting using PDMS, injection molding of thermoplastics or 3D printing, etc. Among these processes, 3D printing can fabricate micro-fluidic chip directly from the design without master or template for fluidic channel fabricated previously. Due to this direct printing, 3D printing provides very fast and economical method for prototyping micro-fluidic chip comparing to conventional fabrication process such as lithography, PDMS casting or injection molding. Although 3D printing is now used more extensively due to this fast and cheap process done automatically by single printing machine, there are some issues on accuracy or surface characteristics, etc. The accuracy of the shape and size of the micro-channel is limited by the resolution of the printing and printing direction or layering direction in case of SLM type of 3D printing using UV curable resin. In this study, the printing direction and thickness of each printing layer are investigated to see the effect on the size, shape and surface of the micro-channel. A set of micro-channels with different size was designed and arrayed orthogonal. Micro-fluidic chips are 3D printed in different directions to the micro-channel, orthogonal, parallel, or skewed. The shape of the cross-section of the micro-channel and the surface of the micro-channel are photographed using optical microscopy. From a series of experiments, an optimal printing direction and process conditions are investigated for 3D printing of micro-fluidic chip.

• Applied Chemistry for Engineering
• /
• v.35 no.1
• /
• pp.61-65
• /
• 2024

The effectiveness of CuSCN as a hole injection layer in large-area organic light-emitting diodes, organic solar cells, and thin-film transistors has been well demonstrated. Therefore, in this study, the surface, optical, and electrical analyses of CuSCN were carried out according to the solution process conditions in order to propose optimized film conditions. Various CuSCN solution concentrations were prepared to determine the film surface characteristics and to determine whether the film surface affects the electrical performance of the device. When the CuSCN solution concentration was low, the CuSCN film was not formed and coated in the form of islands, and when the solution concentration was increased, the CuSCN film was formed uniformly, which contributed to improving the conductivity of the device. In addition, a hole-only device was fabricated to demonstrate the role of CuSCN as a hole transport layer.

• Korean Journal of Materials Research
• /
• v.3 no.6
• /
• pp.632-637
• /
• 1993

The optical properties and electrochromism of amorphous $WO_3$ thin films were studied. $WO_3$ thin films with thickness of 3000$\AA$~6000$\AA$ were deposited by vacuum evaporat.ion. All these films were transparent and found to be amorphous in structure by X-ray diffraction analysis and the visible wave length refractive indices were found to be between 1.9 and 2.1 and the optical energey gap to be 3.25 eV. Electrochromic devices were made consisting of IT0 transparent electrode, $WO_3$ thin films, $LiCIO_4$- propylene carbonate and Pt counter electrode. In terms of their operation, the amorphous $WO_3$ films were colored blue by a double injection of electrons from the transparent electrode and lithium ions from the $LiCIO_4$-propylene carbonate organic electrolyte and made colorless by electrochemical oxidation reaction. The electrochromic properties of $WO_3$ thin films including coloration and bleaching, optical density and response time were all found to be strongly dependent on the film deposition condition, electrolyte concentration, sheet resistance of the transparent electrode and applied voltage.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2012.08a
• /
• pp.313-313
• /
• 2012

In recent years there have been many studies of InGaN/GaN based light emitting diodes (LEDs) in order to progress the performance of luminescence. Many previous literatures showed the performance of LEDs by changing the LED structures and substrates. However, the studies carried out by the researchers so far were very complicated and sometimes difficult to apply in practice. Therefore, we propose one simple method of changing the thickness and the numbers of multiple quantum wells (MQWs) in order to optimize their effects. In our research, we investigated electrical and optical properties by changing the well thickness and the number of quantum well (QW) pair in LED structures by growing the structure -inch Si (111) wafer. We defined the samples from LED_1 to LED_3 according to MQW structure. Samples LED_1, LED_2 and LED_3 consist of 5-pair InGaN/GaN (3.5 nm/ 4.5 nm), 5-pair InGaN/GaN (3 nm/4.5 nm) and 7-pair InGaN/GaN (3.5 nm/4.5 nm), respectively. We characterized electrical and optical properties by using electroluminescence (EL) measurement. Also, Efficiency droop was analyzed by calculating external quantum efficiency (EQE) with varying injection current. The EL spectra of three samples show different emission wavelength peaks, FWHM and the blueshift of wavelength caused by screening the internal electric field because of the effect of different MQW structure. The results of optical properties show that the LED_2 sample reduce the internal electric field in QW than LED_1 from EL spectra. the increase in the number of QW pairs reduces the strain and increase the In composition in MQW. And, the points of efficiency droop's peak show different trend from LED_1 to LED_3. It is related with the carrier density in active region. Thus, from the results of experiments, we are able to achieve high performance LEDs and a reduction of efficiency droop and emission wavelength blueshift by optimizing MQWs structure.

• Journal of the Institute of Electronics Engineers of Korea TC
• /
• v.43 no.5 s.347
• /
• pp.59-67
• /
• 2006

We demonstrate bidirectional long-reach 35-channel dense wavelength division multiplexing-passive optical network(DWDM-PON) based on wavelength-locked Fabry-Perot laser diodes (F-P LDs). The mode control of F-P LD enhances output power at decreased the required injection power. We show packet-loss-free transmission in all 70 channels at 125 Mb/s per channel line rate through 70 km of single mode fiber without optical amplifier The DWDM-PON can consolidate a metro network into an access network by bypassing the central offices within its reach. The proposed DWDM-PON can accommodate about 80 subscribers with an EDFA-based broadband light source. Further expansion up to 100 subscribers is possible with a semiconductor-based BLS.

• Journal of the Korean Society for Precision Engineering
• /
• v.28 no.7
• /
• pp.777-782
• /
• 2011

Micro features on the surface are well-known to have significant effects on optical or mechanical properties such as the optical interference, reflectance at the surface, contact angle, interfacial friction, etc. These surface micro features are increasingly employed to enhance the functionality of the applications in various application areas such as optical components for LCD or solar panel. Diverse surface features have been proposed and some of them are showing excellent efficiency or functionality, especially in optical applications. Most applications employing the micro features need manufacturing process for mass production and the injection molding and roll-to-roll forming, which are typical processes for mass production adopting polymeric materials, may be also preferred for micro patterned plastic product. Since the functionality or efficiency of the surface structures generally depends on the shape and the size of the structure itself or the array of the structures on the surface, it would be very important to replicate the features very precisely as being designed during the molding the micro pattern applications. In this paper, a series of research activities is introduced for roll-to-roll forming of micro patterned film including filling of patterns with UV curable resin, demolding of surface structures from the roll tool, control of surface energy and cure shrinkage of resin and dispose time and intensity of the UV light for curing of UV curable resin.

• Journal of the Korean Graphic Arts Communication Society
• /
• v.22 no.2
• /
• pp.179-198
• /
• 2004

Organic electroluminescent devices are light-emitting diodes in which the active materials consist entirely of organic materials. Recently, many fluorescent organic materials have been reported and the study on synthesis and application of new organic light-emitting materials has been demanded. This paper reports the optical and electrical characteristics of OLEDs using novel polymers containing biphenyl structure. First, Optical properties of novel light-emitting biphenyl derivatives doped with poly(9-vinyl carbazole)(PVK) and emitted blue, bluish green color, which is attributed to the overlap area between PL spectrum of host(PVK) and absorption spectra of guests(polymer). This is correspondent with F$\"{o}$rster energy transfer process in the blends. And, OLED devices were fabricated using poly (3,4-ethylenedioxy thiophene) (PEDOT) as a hole injection material and tris-(8-hydroxyquinoline) aluminum ($Alq_3$) as an electron transporting material. EL devices fabricated as ITO/PEDOT/PVK doped with biphenyl derivatives/$Alq_3$/Li:Al and I-V-L chatacteristics and emitting efficiency of EL devices were examined. Finally, the drift mobility of PVK doped with biphenyl derivatives and $Alq_3$ were measured by TOF technique varying applied electric field. EL efficiency was increased as the ratio of hole mobility of PVK doped with biphenyl derivatives and electron mobility of $Alq_3$ was close to one.

• Journal of the Institute of Electronics Engineers of Korea SD
• /
• v.48 no.3
• /
• pp.12-17
• /
• 2011

In this paper, we report on the improved electrical and optical characteristics for decreasing current crowding effect and uniform current distribution by designing octagonal finger type electrode pattern in large-scale lateral GaN (Gallium Nitride) LED (Light-emitting diode) with numerical 3-D simulator. Compared with the conventional electrode pattern, proposed electrode pattern was investigated to confirm the improvement of characteristics. From the simulation results of 3-D SpeCLED/RATRO simulator, we found that the forward voltage was decreased by 0.34 V and the light output power was improved by 7.72 mW at the same injection current condition in the LED with proposed octagonal finger type electrode.