• 한국진공학회지
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• 제10권2호
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• pp.194-200
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• 2001

13.56 MHz rf플라즈마를 이용하여 증착된 DLC(diamond-like carbon) 박막의 광학적 특성에 대해 조사하였다. $CH_4$가스를 원료가스로 하여 PECVD법에 의해 DLC 박막을 형성하였으며 이때 RF power, working pressure, 보조가스의 종류 및 양에 따른 투과도(transmittance)와 optical band gap의 변화를 관찰하였다. RF power가 증가하고 working pressure가 높을수록 optical band gap이 감소하는 결과를 얻을 수 있었고. FT-IR분석을 이용하여 탄소-수소 결합 양을 관찰함으로써 DLC 박막의 결합구조 변화를 증명할 수 있었다. 그리고 수소와 질소를 첨가한 경우 증착시 탄소-수소 결합을 끊는 역할을 하여 optical band gap이 감소하는 결과를 얻을 수 있었다.

• E2M - 전기 전자와 첨단 소재
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• 제9권5호
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• pp.445-449
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• 1996

Structural and optical characteristics in Se thin film fabricated by EBE method had been studied. Se thin film was deposited with noncrystalline until substrate temperature of >$100^{\circ}C$ Color of its surface had red genealogy, and its optical energy band gap was about 2.45 eV. But Se film was grown with monoclinic at substrate temperature of over >$150^{\circ}C$ Also, color of its surface had gray genealogy, and its optical energy band gap was about 2.31 eV. Finally, after heat-treatment at >$150^{\circ}C$ for 15 min with substrate temperature of >$100^{\circ}C$ noncrystalline Se was proved to be hexagonal, and color of its surface had dark gray genealogy, and its optical energy band gap was about 2.06 eV. From the results, it was known that Se thin film for photoelectric device with the lowest optical energy band gap was accepted from hexagonal structure.

• 한국전기전자재료학회논문지
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• 제11권9호
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• pp.693-699
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• 1998

In this work $Cd_4GeS_6:Co^{2+}$(0.5mole%) single crystals were grown by the chemical transporting reactiov(CTR) method using high purity(6N) elements. The grown single crystals crystallized in a monoclinic structure(space group Cc). The direct optical energy gap of this single crystals was found to be 2.445eV at 300K and the temperature dependence of optical energy gap was fitted well to Varshni equation. But at temperatures lower than 70K an anomalous temperature dependence of the optical energy gap was obtained. This anomalous temperature dependence accored well with the anomalous temperature dependence of the unit cell volume. Also, the entropy, enthalpy and heat capacity were deduced from the temperature dependence of optical energy gaps.

• 한국소음진동공학회:학술대회논문집
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• 한국소음진동공학회 2004년도 춘계학술대회논문집
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• pp.888-893
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• 2004

This paper proposed a dual actuator using bimorph PZT for information storage device based on prove array NSOM(Near-field Scanning Optical Microscopy). The gap between the media and the optical head should be maintained within the optical tolerance. Therefore, a new actuator having high sensitivity is required. Bimorph PZT, which has fast access time and high sensitivity characteristic, is suitable for this precise actuating system. This paper is focused on derivation of mathematical model of dual bimorph PZT actuator and control algorithm. Hamilton's principle was used for mathematical model. The model is verified by FEA(Finite Element Analysis), and compared with experimental results. Different control algorithms were used f3r two bimorph PZT actuating same direction and opposite direction. The gap between recording media and optical head was controlled within 20nm in experiment.

• Bulletin of the Korean Chemical Society
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• 제35권5호
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• pp.1523-1528
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• 2014

Silicon quantum dots (Si QDs) were synthesized by etching silicon nanopowder with aqueous hydrofluoric acid (HF) and nitric acid ($HNO_3$). Then, the hydride-terminated Si QDs (H-Si QDs) were functionalized by 1- octadecene (ODE). By only controlling the etching time, the maximum luminescence peak of octadecylterminated Si QDs (ODE-Si QDs) was tuned from 404 nm to 507 nm. The average optical gap was increased from 2.60 eV (ODE-Si QDs-5 min) for 5 min of etching to 3.20 eV (ODE-Si QDs-15 min) for 15 min of etching, and to 3.40 eV (ODE-Si QDs-30 min) for 30 min of etching. The electron affinities (EA), ionization potentials (IP), and quasi-particle gap (${\varepsilon}^{qp}_{gap}$) of the Si QDs were determined by cyclic voltammetry (CV). The quasi-particle gaps obtained from the CV were in good agreement with the average optical gap values from UV-vis absorption. In the case of the ODE-Si QDs-30 min sample, the difference between the quasi-particle gap and the average optical gap gives the electron-hole Coulombic interaction energy. The additional electronic levels of the ODE-Si QDs-30 min and ODE-Si QDs-15 min samples determined by the CV results are interpreted to have originated from the Si=O bond terminating Si QD.

• 한국초전도ㆍ저온공학회논문지
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• 제26권2호
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• pp.1-4
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• 2024

We investigated Pb_10-xCu_x(PO₄)₆ (0.9 < x < 1.1) (LK-99) and Cu₂S, presumed to be contained as an impurity in LK-99, in a wide spectral range from far infrared to ultraviolet using optical spectroscopy. The optical conductivity spectra of both samples were obtained from measured reflectance spectra at various temperatures from 80 to 434 K. Both samples showed several infrared-active phonons in the far and mid-infrared regions. LK-99 showed typical insulating features with a band gap of ~1 eV. Cu₂S showed a nonmonotonic temperature-dependent trend and two energy gaps: one energy gap of ~93 meV and a band gap of 2.42 eV. Our results indicate that LK-99 cannot be a superconductor because it is an insulator with a large band gap.

• 한국진공학회지
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• 제3권4호
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• pp.420-425
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• 1994

메탄을 원료가스로 하여 PECVD에 의해 다이아몬드성 탄소(DLC) 박막을 형성하였으며 이때 인 가전력의 크기 및 주파수 그리고 보조가스의 종류가 optical band gap의 크기에 미치는 영향에 대학여 연구하였다. DLC 박막의 optical band gap 은 증착되는 이온의 에너지가 증가할수록 감하였으며 불활성 기체를 보조가스로 사용하는 경우 인가전력에 따른 optical band gap의 크기가 큰폭으로 감소하였다. 소 소를 보조가스로 사용한 경우는 높은 인가전력(100W 이상)에서 optical band gap이 증가하는 것으로 밝 혀졌으며 본 연구에서 제안된 증착 기수의 모델에 의해 적절한 설명이 가능하였다.

• 대한기계학회논문집A
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• 제28권3호
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• pp.245-250
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• 2004

This paper proposes a new method of measuring an air interface distance between a solid immersion lens(SIL) applied magneto-optic technology and the disk surface. For applying near-field recording (NFR) technology to the magneto-optic storage devices for the next generation, it is positively necessary to maintain the small air gap under about 100㎚. We design an apparatus that consists of some optical components such as a prism, a polarizer and an analyzer. By using the Fresnel reflection coefficient equation, Jones matrices calculation and Malus's law, we establish a mathematical model for understanding the characteristics of the system. The simulations are based on the mathematical model and through the simulation results which is made with various cases we can estimate the performance of the new optical gap sensor system. Experimental results, which are also based on the mathematical model for specific cases, are in good agreement with simulated ones and demonstrate the possibility as the new optical gap sensor.

• 한국광학회:학술대회논문집
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• 한국광학회 2001년도 제12회 정기총회 및 01년도 동계학술발표회
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• pp.142-143
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• 2001

Cell gap은 LCD(Liquid Crystal Display)의 중요한 파라미터들 중의 하나이다. cell gap이 LCD의 광학적인 성능에 영향을 주기 때문에 정확한 cell gap 측정방법은 제조공정을 향상시키는데 중요하다 특히 최근 고속 영상 디스플레이를 제공할 수 있는 장점 때문에 낮은 cell gap의 LCD가 요구되고 있는 시장 추세에 따라 낮은 cell gap을 측정할 수 있는 기술이 요구되고 있다. LCD의 cell gap 측정 방법들 가운데 가장 보편화되어 있는 것으로 회전편광자법(rotating polarizer method)[1, 2]과 위상보상법(phase compensation method)[3,4]을 들 수 있는데 낮은 셀갭을 정확히 측정하기가 어려우며 주기적인 해가 발생한다는 단점이 있다. (중략)

• 전기학회논문지P
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• 제51권3호
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• pp.137-141
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• 2002

CdS and $CdS:Co^{2+}$ single crystals were grown by CTR method using iodine as transport material. The grown single crystals have defect chalcopyrite structure with direct band gap. The optical energy band gap was decreased according to add of Co-impurity. We can observed the Co-impurity optical absorption peaks assigned to the $Co^{2+}$ ion sited at the $T_d$ symmetry lattice and we consider that they were attributed to the electron transitions between energy levels of ions.