• Journal of Technologic Dentistry
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• v.43 no.4
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• pp.145-152
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• 2021

Purpose: This study aimed to produce resin prosthetics using a dental barrel finishing machine. For dental resin grinding, the ingredients of the barrel finishing media were analyzed, and surface residues of the resin were observed. Methods: Two types of barrel finishing media for dental resin grinding were tested. Specimens were made from thermal polymerized, auto polymerized, and photopolymerized resins. Finishing media were analyzed through energy-dispersive X-ray spectroscopy (EDS) component analysis and inductively coupled plasma-optical emission spectrometry (ICP-OES) component analysis. Then, the prepared specimen was barrel finished for 25 minutes using two types of barrel finishing media, and scanning electron microscope was photographed to observe the surface residues. Results: As a result of EDS component analysis, both types of finishing media were analyzed for the components of C, O, Zr and Al elements, and industry media (IM) was further analyzed for the components of Si and Mg elements. In the ICP-OES component analysis, Cd and As, which are harmful elements, were detected in IM, and no harmful elements were detected in manufacturing media (MM). Because of observation of surface residues, no residues were observed in the three types of resin specimens that were barrel finished with two types of finishing media. Conclusion: Surface residue wasn't observed on the specimens polished using two types of finishing media. However, in IM, Cd and As, which are harmful elements, were detected, making it inappropriate for clinical use. In MM, harmful elements were not detected; therefore, clinical use will be possible.

• Bulletin of the Korean Chemical Society
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• v.34 no.6
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• pp.1779-1782
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• 2013

N-type ZnO nanorods were grown on p-type porous silicon using a chemical bath deposition (CBD) method (p-n diode). The structure and geometry of the device were examined by field-emission scanning electron microscopy (FE-SEM) and X-ray diffraction (XRD) while the optoelectronic properties were investigated by UV/Vis absorption spectrometry as well as photoluminescence and electroluminescence measurements. The field emission (FE) properties of the device were also measured and its turn-on field and current at 6 $V/{\mu}m$ were determined. In principle, the growth of ZnO nanorods on porous siicon for optoelectronic applications is possible.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.32 no.5
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• pp.387-392
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• 2019

$Dy^{3+}$ and $Eu^{3+}$-co-doped $La_2MoO_6$ phosphor thin films were deposited on sapphire substrates by radio-frequency magnetron sputtering at various growth temperatures. The phosphor thin films were characterized using X-ray diffraction (XRD), scanning electron microscopy, ultraviolet-visible spectroscopy, and fluorescence spectrometry. The optical transmittance, absorbance, bandgap, and photoluminescence intensity of the $La_2MoO_6$ phosphor thin films were found to depend on the growth temperature. The XRD patterns demonstrated that all the phosphor thin films, irrespective of growth temperatures, had a tetragonal structure. The phosphor thin film deposited at a growth temperature of $100^{\circ}C$ indicated an average transmittance of 85.3% in the 400~1,100 nm wavelength range and a bandgap energy of 4.31 eV. As the growth temperature increased, the bandgap energy gradually decreased. The emission spectra under ultraviolet excitation at 268 nm exhibited an intense red emission line at 616 nm and a weak emission line at 699 nm due to the $^5D_0{\rightarrow}^7F_2$ and $^5D_0{\rightarrow}^7F_4$ transitions of the $Eu^{3+}$ ions, respectively, and also featured a yellow emission band at 573 nm, resulting from the $^4F_{9/2}{\rightarrow}^6H_{13/2}$ transition of the $Dy^{3+}$ ions. The results suggest that $La_2MoO_6$ phosphor thin films can be used as light-emitting layers for inorganic thin film electroluminescent devices.

• Journal of the Microelectronics and Packaging Society
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• v.21 no.2
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• pp.31-35
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• 2014

The thickness dependent electrical, structural, and optical properties of ZnO films grown by atomic layer deposition (ALD) at various growth temperatures were investigated. In order to deposit ZnO films, diethylzinc and deionized water were used as metal precursor and reactant, respectively. ALD process window was found at the growth temperature range from $150^{\circ}C$ to $250^{\circ}C$ with a growth rate of about $1.7{\AA}/cycle$. The electrical properties were studied by using van der Pauw method with Hall effect measurement. The structural and optical properties of ZnO films were analyzed by using X-ray diffraction, field emission scanning electron microscopy, and UV-visible spectrometry as a function of thickness values of ZnO films, which were selected by the lowest electrical resistivity. Finally, the figure of merit of ZnO films could be estimated as a function of the film thickness. As a result, this investigation of thickness dependent electrical, structural, and optical properties of ZnO films can provide proper information when applying to optoelectronic devices, such as organic light-emitting diodes and solar cells.

• Laser Solutions
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• v.17 no.4
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• pp.7-13
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• 2014

In this work, the application of laser induced breakdown spectroscopy (LIBS) for the composition analysis of thin $Cu(In,Ga)Se_2$ (CIGS) solar cell films ($1-2{\mu}m$ thickness) is reported. For the ablation of CIGS films, femtosecond (fs) laser (wavelength = 343nm, pulse width = 500fs) and nanosecond (ns) laser (wavelength = 266nm, pulse width = 5ns) were used under atmospheric environment. The emission spectra were detected with an intensified charge coupled device (ICCD) spectrometer and multichannel CCD spectrometer for fs-LIBS and ns-LIBS, respectively. The calibration curves for fs-LIBS and ns-LIBS intensity ratios of Ga/Cu, In/Cu, and Ga/In were generated with respect to the concentration ratios measured by inductively coupled plasma optical emission spectrometry (ICP-OES).

• Bulletin of the Korean Chemical Society
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• v.26 no.3
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• pp.440-446
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• 2005

A method is described for the determination of dibutyltin (DBT) in sediment by isotope dilution using liquid chromatography inductively-coupled plasma/mass spectrometry (LC-ICP/MS). To achieve the highest accuracy and precision, special attentions are paid in optimization and evaluation of overall processes of the analysis including extraction of analytes, characterization of the standards used for calibration and LC-ICP/MS conditions. An approach for characterization of natural abundance DBT standard has been developed by combining inductively-coupled plasma/optical emission spectrometry (ICP/OES) and LC-ICP/MS for the total Sn assay and the analysis of Sn species present as impurities, respectively. An excellent LC condition for separation of organotin species was found, which is suitable for simultaneous DBT and tributyltin (TBT) analysis as well as impurity analysis of DBT standards. Microwave extraction condition was also optimized for high efficiency while preventing species transformation. The present method determines the amount contents of DBT in sediments with expanded uncertainty of less than 5% and its result shows high degree of equivalence with reference values of an international inter-comparison and a certified reference material (CRM) within stated uncertainties.

• Proceedings of the Korean Environmental Health Society Conference
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• 2003.06a
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• pp.89-93
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• 2003

Daily average concentrations of fine particulates have been measured simultaneously in Seoul and Asan area by using PM minivolTM portable air sampler(Air Metrics, U.S.A) from September 2001 to August 2002. The sampler were analyzed by ICP-OES(inductively coupled plasma optical emission spectrometry, optima 3000DV, Perkin Elmor) to determine the fine particulate concentrations of metallic elements(As, Mn. Ni, Fe, Cr, Cu, Cd, Pb, Zn, Si). The concentration of PM$\sub$2.5/ showed a high trend in the Seoul area. Zn showed a similar distribution ratio for the fine particle in both Seoul and Asan. Mn and Fe, Cr, Cd are highly correlated in the Seoul and Asan area(P<0.05).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.04b
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• pp.22-25
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• 2004

In this study, BST thin films were etched with inductively coupled $CF_4/(Cl_2+Ar)$ plasmas. The etch characteristics of BST thin films as a function of $CF_4/(Cl_2+Ar)$ gas mixtures were analyzed using quadrupole mass spectrometry (QMS) and optical emission spectroscopy (OES). The maximum etch rate of the BST thin films was 53.6 nm/min because small addition of $CF_4$ to the $Cl_2/Ar$ mixture increased chemical effect. The optimum condition appears to be under a 10 % $CF_4/(Cl_2+Ar)$ gas mixture in the present work.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.367-367
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• 2011

CIGS solar cell with copper, indium, gallium and selenium is a second generation solar cells for the lowering of the manufacturing cost. The relative ratio of the four elements is one of the most important measurement issues because the photovoltaic property of CIGS solar cell depends on the crystalline structure of the CIGS layer. However, there is no useful analysis method for the composition of the CIGS layer. Recently, AES depth profiling analysis of CIGS films has been studied with a reference material certified by inductively coupled plasma optical emission spectroscopy. However, there are some problems in AES depth profiling analysis of CIGS films. In this study, the in-depth profiling analysis was investigated by secondary ion mass spectrometry (SIMS) depth profiling analysis. We will present the compositional depth profiling of CIGS films by SIMS and its applications for the development of CIGS solar cells with high efficiency.

• Proceedings of the KIEE Conference
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• 2009.07a
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• pp.1343_1344
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• 2009

In this work, transparent conducting Al-doped zinc oxide (AZO) films were prepared on Corning glass substrate by RF magnetron sputtering using an Al-doped ZnO target (Al: 2 wt.%) at room temperature and all films were deposited with athickness of 150 nm. We investigated the effects of the post-annealing temperature and the annealing ambient on structural, electrical and optical properties of AZO films. The films were annealed at temperatures ranging from 300 to $500^{\circ}C$ in steps of $100^{\circ}C$ using rapid thermal annealing equipment in oxygen. The thickness of the film was observed by field emission scanning electron microscopy (FE-SEM) and grain size was calculated from the XRD spectra using the Scherrer equation and their electrical properties were investigated using a hole measurement and the reflectance of AZO films was investigated by UV-VIS spectrometry.