• 한국정보디스플레이학회:학술대회논문집
• /
• 2006.08a
• /
• pp.473-476
• /
• 2006

Microcavity plasma devices having characteristic dimensions below $100\;{\mu}m$ have been investigated as a candidate for the next generation of plasma displays. Arrays of inverted pyramid microcavity devices, fabricated in Si with emitting apertures of $(50\;{\mu}m)^2$ and designed for AC or bipolar excitation, demonstrate a luminous efficacy above 6 lm/W at pressures up to and beyond one atmosphere of Ne/Xe mixtures. Also the design of analogous microplasma devices in ceramic multilayer structures or plastic substrates is disccussed.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2014.02a
• /
• pp.179.1-179.1
• /
• 2014

Si nanowires have exhibited unique optical characteristics, including nano-antenna effects due to the guided mode resonance, significant optical absorption enhancement in wide wavelength and incident angle range due to resonant optical modes, graded refractive index, and scattering. Since Si poor optical absorption coefficient due to indirect bandgap, all such properties have stimulated proposal of new optoelectronic devices whose performance can surpass that of conventional planar devices. We have carried out finite-difference time-domain simulation studies to design optimal Si nanowire array for solar cell applications. Optical reflectance, transmission, and absorption can be calculated for nanowire arrays with various diameter, length, and period. From the absorption, maximum achievable photocurrent can be estimated. In real devices, serious recombination loss occurring at the surface states is known to limit the photovoltaic performance of the nanowire-based solar cells. In order to address such issue, we will discuss how the geometric parameters of the array can influence the spatial distribution of the optical field (resulting optical generation rate) in the nanowires.

• Proceedings of the Optical Society of Korea Conference
• /
• 1990.02a
• /
• pp.207-210
• /
• 1990

The mechanisms of the meltback etching and regrowth processes are studied experimentally. The depth and time of the meltback is poltted with the experimental data and fitted with some functions. The method to reduce the anisotropy and elliminate the gallium is lands are also developed. It is possible to fabricate the AlGaAs micro-lens array by the use of the process and apply it to a new optical devices.

• ETRI Journal
• /
• v.28 no.1
• /
• pp.103-106
• /
• 2006

We have fabricated a planar lightwave circuit (PLC) hybrid-integrated optical sub-assembly of a triplexer using a thin film filter (TFF)-attached wavelength division multiplexer (WDM) and photodiode (PD) carriers. Two types of TFFs were attached to a diced side of a silica-terraced PLC platform, and the PD carriers with a $45^{\circ}$ mirror on which pin-PDs were bonded were assembled with the platform. A clear transmitter eye-pattern and minimum receiver sensitivity of -24.5 dBm were obtained under 1.25 Gb/s operation for digital applications, and a second-order inter-modulation distortion (IMD2) of -70 dBc was achieved for an analog receiver.

• Journal of the Optical Society of Korea
• /
• v.9 no.1
• /
• pp.1-5
• /
• 2005

Using tightly focused femtosecond laser pulses, we produce an optical waveguide and optical devices in transparent materials. This technique has the potential to generate not only channel waveguides, but also three-dimensional optical devices. In this paper, an optical splitter and U-grooves, which are used for fiber alignment, are simultaneously fabricated in a fused silica glass using near-IR femtosecond laser pulses. The fiber aligned optical splitter has a low insertion loss, less than 4㏈, including an intrinsic splitting loss of 3㏈ and excess loss due to the passive alignment of a single-mode fiber. Finally, we demonstrate the utility of the femtosecond laser writing technique by fabricating gratings at the surface and inside the silica glass.

• Journal of the Optical Society of Korea
• /
• v.16 no.4
• /
• pp.432-442
• /
• 2012

In this paper, we propose, analyze and simulate the performances of some new plasmonic logic gates in two dimensional plasmonic waveguides with nanodisk resonators, using the numerical method of finite difference time domain (FDTD). These gates, including XOR, XNOR, NAND, and NOT, can provide the highly integrated optical logic circuits. Also, by cascading and combining these basic logic gates, any logic operation can be realized. These devices can be utilized significantly in optical processing and telecommunication devices.

• 제어로봇시스템학회:학술대회논문집
• /
• 2003.10a
• /
• pp.273-277
• /
• 2003

A general process of electronic assembly is composed of a series of geometric alignments and bonding/screwing processes. After assembly, the function is tested in a following process of inspection. However, assembly of micro-optic devices requires both processes to be performed in equipment. Coarse geometric alignment is made by using vision and optical function is improved by the following fine motion based on feedback of tunable laser interferometer. The general system is composed of a precision robot system for 3D assembly, a 3D vision guided system for geometric alignment and an optical feedback system with a tunable laser. In this study, we propose a new fast alignment algorithm of micro-optic devices for both of visual and optical alignments. The main goal is to find a fastest alignment process and algorithms with state-of-the-art technology. We propose a new approach with an optimal sequence of processes, a visual alignment algorithm and a search algorithm for an optimal optical alignment. A system is designed to show the effectiveness and efficiency of the proposed method.

• Korean Journal of Optics and Photonics
• /
• v.4 no.3
• /
• pp.294-300
• /
• 1993

Monolithic NOR and INVERTER active optical logic devices inte- grated with surface-emitting microlasers, heterojunction photo- transistors(HPT) in parallel and resistors in series are characterized. The differential quantum efficiency of the typical AlGaAs superlattice microlaser integrated in the active optical logic devices is 15%. Current gain of the HPT is 57, when emitter-collector voltage and input optical power are 4 V and $50{\mu}W$, respectively. $57{\mu}W$ of output power from the active optical logic device decreases to zero when $47{\mu}W$ of input optical power is incident on the HPT part of the active logic device.

• ETRI Journal
• /
• v.43 no.5
• /
• pp.909-915
• /
• 2021

GaAs on Si grown via metalorganic chemical vapor deposition is demonstrated using various Si substrate thicknesses and three types of dislocation filter layers (DFLs). The bowing was used to measure wafer-scale characteristics. The surface morphology and electron channeling contrast imaging (ECCI) were used to analyze the material quality of GaAs films. Only 3-㎛ bowing was observed using the 725-㎛-thick Si substrate. The bowing shows similar levels among the samples with DFLs, indicating that the Si substrate thickness mostly determines the bowing. According to the surface morphology and ECCI results, the compressive strained indium gallium arsenide/GaAs DFLs show an atomically flat surface with a root mean square value of 1.288 nm and minimum threading dislocation density (TDD) value of 2.4×10⁷ cm^-2. For lattice-matched DFLs, the indium gallium phosphide/GaAs DFLs are more effective in reducing the TDD than aluminum gallium arsenide/GaAs DFLs. Finally, we found that the strained DFLs can block propagate TDD effectively. The strained DFLs on the 725-㎛-thick Si substrate can be used for the large-scale integration of GaAs on Si with less bowing and low TDD.

• Optical Science and Technology
• /
• v.4 no.2
• /
• pp.4-15
• /
• 2000