• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.1
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• pp.357-360
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• 2004

Al doped ZnO thin films have been were properties of excellent optical transmittance, low resistivity and wide bandgap where be widely used transparent electrode on solar cell. In this paper, ZnO:Al thin films on PC substrate were prepared by RF magnetron sputtering method using ceramic taget with diffrent deposition conditions. In addition, the electrical, structural, optical properties were investigated. we investigated sample properties of Sputter powers and pressures change in $25{\sim}125W,\;2{\times}10^{-2}{\sim}2{\times}10^{-3}Torr$.

• 한국전기전자재료학회논문지
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• 제36권6호
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• pp.582-587
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• 2023

The effects of the annealing temperature on the structural, morphological, and luminescent properties of SrWO₄:Sm³⁺ thin films grown on quartz substrates by radio-frequency magnetron sputtering were investigated. The thin films were annealed at various annealing temperatures for 20 min in a rapid thermal annealer after growing the thin films. The experimental results showed that the annealing temperature has a significant effect on the properties of the SrWO₄:Sm³⁺ thin films. The crystal structure of the as-grown SrWO₄:Sm³⁺ thin films was transformed from amorphous to crystalline after annealing at 800℃. The preferred orientation along (112) plane and a significant increase in average grain size by 820 nm were observed with increasing the annealing temperature. The average optical transmittance in the wavelength range of 500~1,100 nm was decreased from 72.0% at 800℃ to 44.2% at an annealing temperature of 1,000℃, where the highest value in the photoluminescence intensity was obtained. In addition to the red-shift of absorption edge, a higher annealing temperature caused the optical band gap energy of the SrWO₄:Sm³⁺ thin films to fall rapidly. These results suggest that the structural, morphological, and luminescent properties of SrWO₄:Sm³⁺ thin films can be controlled by varying annealing temperature.

• Transactions on Electrical and Electronic Materials
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• 제7권5호
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• pp.271-275
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• 2006

Al oped zinc oxide (AZO) films were prepared by Facing Targets Sputtering (FTS) system for TCO applications. The electrical, optical and structural properties of AZO thin films have been investigated with input current, oxygen gas flow ratio and substrate temperature. Deposition was carried out at room temperature and $200^{\circ}C$. Working gas pressures were fixed at 1mTorr. As a result, AZO thin film deposited with an optical transmittance over 80 % and a resistivity about $10^{-4}{Omega}{\cdot}cm$.

• 한국전기전자재료학회논문지
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• 제26권9호
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• pp.641-645
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• 2013

Chalcogenide glass has superior property of optical transmittance in the infrared region. Glass made using Ge-Se how many important optical applications. We have determined the composite formular of $Ge_{0.25}Se_{0.75}$ to be the GeSe chalcogenide glass composition appropriate for IR lenses. Also, the optical, thermal and physical characteristics of chalcogenide glass depended on the composition ratio. GeSe bulk sample is produced using the traditional melt-quenching method. The optical, structural, thermal and physical properties of the compound were measured by using Fourier transform infrared spectroscopy (FT-IR), X-ray diffraction (XRD), Differential scanning calorimeter (DSC), and Scanning electron microscope (SEM) respectively.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1994년도 추계학술대회 논문집 학회본부
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• pp.225-227
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• 1994

The second-order nonlinear optical effect, especially the second harmonic generation, in Langmuir-Blodgett(LB) films have get much attention over the past few years. For second harmonic generation(SHG) of the ultrathin organic films, the multilayer structure of the film should have the noncentrosymmetric arrangements of molecules. The Langmuir-Blodgett technique can result in the production of thin films of precisely controlled dimensions and structure. In this paper, n-octadecyl 4-(4'-nitrophenylazo)-1-naphthyl ether, ONNE(azohenzene derivative), was synthesized and the optical properties of ONNE was studied. Nonccntrosymmctric Z-type LB films of ONNE were prepared and SHG intensity of the film were measured. The structural characteristics of floating monolayer(L film) and LB film of ONNE were discussed with $\pi$-A isotherm. UV-visible absorption spectroscopy and spectroscopic ellipsometry. The polarized UV-visible absorption spectroscopy and SHO intensity suggest the molecular orientation in LB film.

• 한국전기전자재료학회논문지
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• 제20권12호
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• pp.1072-1076
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• 2007

We prepared the Al doped ZnO (AZO) thin film on polyethersulfon (PES) without any substrate heating by Facing Targets Sputtering (FTS) system. FTS system has two different facing targets. One is ZnO doped the content of Al 2 wt% and the other is Zn in order to decrease resistivity. The electrical, structural and optical properties of AZO thin films were investigated. To evaluate the as-deposited thin film properties, we employed four-point probe (CMT-R100nw, Changmin), Surface profiler (Alpha-step, Tencor), UV/VIS spectrometer (HP), X-ray diffractometer (XRD, Rigaku) and Field Emission Scanning Electron Microscopy (FESEM, Hitachi S-4700). As a result, We obtained that AZO thin film deposited on PES substrate at a DC Power of 150 W, working pressure of 1 mTorr and $O_2$ gas flow ratio of 0.2 exhibited the resistivity of $4.2{\times}10^{-4}\;[{\Omega}cm]$ and the optical transmittance of about 85 % in the visible range.

• 한국정보통신학회:학술대회논문집
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• 한국정보통신학회 2012년도 춘계학술대회
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• pp.734-736
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• 2012

II-VI족 화합물반도체인 CdTe는 태양광을 전기로 변화하는데 있어서 이상적인 1.45eV의 직접천이형 에너지 band gap을 가지고 있으며, $1{\mu}m$ 내외의 두께로도 가시광의 99%이상을 흡수하는 높은 광흡수 계수를 가지므로 얇은 두께로도 태양전지 제작이 가능하다. 현재 CdTe를 이용한 태양전지는 최고 16.5%의 변환효율을 보이고 있으며, 대면적의 module에서는 10% 이상의 효율을 나타내고 있다. CdTe 박막의 제작 방법으로는 스크린 프린팅법(screen printing), 스퍼터링법(sputtering), 근접승화법(CSS:close space sublimation) 등이 있는데, 이중 마그네트론 스퍼터법의 경우, 대면적으로 균일하게 증착이 가능하기 때문에 양산화에 적합하고, 증착 온도를 낮출 수 있으며, 성장 중 도핑 제어가 용이한 장점을 갖고 있다. 특히, 필름 형태의 polyimide (PI), molybdenum (Mo) 기판의 경우, 유리기판에 비해 가벼우면서 깨지지 않아 취급이 용이하다는 장점이 있다. 또한 필름 형태로 제작할 경우 유연성이 있는 태양전지 제작이 가능하여 그 응용 범위를 넓힐 수 있다. 본 연구에서는 PI 및 Mo, 유리 기판 위에 마그네트론 스퍼터법으로 CdTe 박막을 증착하고, 제조 조건에 따른 박막의 구조적, 광학적 물성을 조사하였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 하계학술대회 논문집 Vol.7
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• pp.125-126
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• 2006

ZnO Films have been prepared on polycarbonate (PC), polyethylene terephthalate (PET), and Coming 7059 substrates by r.f. magnetron sputtering technique. A comparison of the properties of the films deposited on polymer and glass substrates was performed. In addition, the effect of the sputter power on the structural and optical properties of these films was evaluated.

• 열처리공학회지
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• 제28권2호
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• pp.63-67
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• 2015

$TiO_2/Ag/TiO_2$ trilayer films were deposited with radio frequency (RF) and direct current (DC) magnetron sputtering onto the glass substrate to consider the influence of Ag interlayer on the optical properties of the films. The thickness of $TiO_2$ films was kept at 24 nm, while the thickness of Ag interlayer was varied as 5, 10, 15, and 20 nm. As-deposited $TiO_2$ single layer films show the optical transmittance of 66.7% in the visible wave-length region and the optical reflectance of 16.5%, while the $TiO_2$ films with a 15 nm thick Ag interlayer show the enhanced optical transmittance of 80.2% and optical reflectance of 77.8%. The carrier concentration was also influenced by Ag interlayer. The highest carrier concentration of $1.01{\times}10^{23}cm^{-3}$ was observed for a 15 nm thick Ag interlayer in $TiO_2/Ag/TiO_2$ films. The observed result means that an optimized Ag interlayer in $TiO_2/Ag/TiO_2$ films enhanced the structural and optical properties of the films.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2009년도 춘계학술대회 논문집
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• pp.169-171
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• 2009

We have fabricated CIGS thin film absorber layers by the evaporation of CIGS powders which were synthesized by solutions with different atomic ratio compositions. We found that the polycrystalline structural properties and optical properties of the deposited CIGS thin films were strongly dependent on the CIGS powder synthesis solution compositions. For three different solution compositions, Cu:In:Ga:Se= 4:3:1:8, 8:3:1:8, 12:3:1,8, the deposited thin film crystalline structures were varied form InSe crystalline structure to CIGS chalcopyrite structures. Our results showed that CIGS powder evaporation is potential for the one step fabrication process for CIGS thin film absorber layer deposition.